OSRAM SFH426

GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAlAs Infrared Emitter in SMT Package SFH 421 SFH 426 SFH 421 SFH 426 Wesentliche Merkmale Features • GaAIAs-LED mit sehr hohem WirkungsgradVery highly efficient GaAIAs-LED Gute Linearität ( I = f [I ]) bei hohen StrömenGood Linearity ( I = f [I ]) at high currents e F e F Gleichstrom- (mit Modulation) oder DC (with modulation) or pulsed operations are Impulsbetrieb möglich possible Hohe ZuverlässigkeitHigh reliability Hohe ImpulsbelastbarkeitHigh pulse handling capability Oberflächenmontage geeignetSuitable for surface mounting (SMT) Gegurtet lieferbarAvailable on tape and reel SFH 421 Gehäusegleich mit SFH 320SFH 421 same package as SFH 320 SFH 426 Gehäusegleich mit SFH 325 SFH 426 same package as SFH 325 SFH 426: Nur für IR-Reflow-Lötung geeignet. SFH 426: Suitable only for IR-reflow soldering. Anwendungen Applications Miniaturlichtschranken für Gleich- und Miniature photointerrupters Wechsellichtbetrieb, LochstreifenleserIndustrial electronics IndustrieelektronikFor drive and control circuits „Messen/Steuern/Regeln“Automotive technology AutomobiltechnikSensor technology SensorikAlarm and safety equipment Alarm- und SicherungssystemeIR free air transmission IR-Freiraumübertragung Typ Bestellnummer Gehäuse Type Ordering Code Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge ® SFH 421 Q62702-P1055 TOPLED SFH 426 Q62702-P0331 SIDELED 2002-03-14 1 SFH 421, SFH 426 Grenzwerte (T = 25 °C) A Maximum Ratings Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Betriebs- und Lagertemperatur T ; T – 40 … + 100 °C op stg Operating and storage temperature range Sperrspannung V 5V R Reverse voltage Durchlaßstrom I 100 mA F Forward current Stoßstrom, τ = 10 μs, D = 0 I 2.5 A FSM Surge current Verlustleistung P 180 mW tot Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei R 450 K/W thJA 2 Montage auf FR4 Platine, Padgröße je 16 mm Thermal resistance junction - ambient mounted 2 on PC-board (FR4), padsize 16 mm each Wärmewiderstand Sperrschicht - Lötstelle bei R ≈ 200 K/W thJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block 2002-03-14 2 SFH 421, SFH 426 Kennwerte (T = 25 °C) A Characteristics Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Wellenlänge der Strahlung λ 880 nm peak Wavelength at peak emission I = 100 mA, t = 20 ms F p Spektrale Bandbreite bei 50% von I Δλ 80 nm max Spectral bandwidth at 50% of I max I = 100 m A F Abstrahlwinkel ϕ± 60 Grad Half angle deg. 2 Aktive Chipfläche 0.09 mm A Active chip area Abmessungen der aktiven Chipfläche L × B 0.3 × 0.3 mm Dimensions of the active chip area L × W Schaltzeiten, I von 10% auf 90% und von 90% t , t 0.5 μs e r f auf 10%, bei I = 100 mA, R = 50 Ω F L Switching times, Ι from 10% to 90% and from e 90% to 10%, I = 100 mA, R = 50 Ω F L Kapazität, C 15 pF o Capacitance V = 0 V, f = 1 MHz R Durchlaßspannung, Forward voltage I = 100 mA, t = 20 ms V 1.5 (≤ 1.8) V F p F I = 1 A, t = 100 μs V 3.0 (≤ 3.8) V F p F Sperrstrom, I 0.01 (≤ 1) μA R Reverse current V = 5 V R Gesamtstrahlungsfluß, Φ 23 mW e Total radiant flux I = 100 mA, t = 20 ms F p Temperaturkoeffizient von I bzw. Φ , TC – 0.5 %/K e e I I = 100 mA F Temperature coefficient of I or Φ , I = 100 mA e e F Temperaturkoeffizient von V , I = 100 mA TC – 2mV/K F F V Temperature coefficient of V , I = 100 mA F F Temperaturkoeffizient von λ, I = 100 mA TC + 0.25 nm/K F λ Temperature coefficient of λ, I = 100 mA F 2002-03-14 3 SFH 421, SFH 426 Strahlstärke I in Achsrichtung e gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity I in Axial Direction e at a solid angle of Ω = 0.01 sr Bezeichnung Symbol Werte Einheit Parameter Values Unit Strahlstärke I > 4 mW/sr e Radiant intensity I = 100 mA, t = 20 ms F p Strahlstärke I 48 mW/sr e typ Radiant intensity I = 1 A, t = 100 μs F p 2002-03-14 4 SFH 421, SFH 426 Ι e = f (I ) Relative Spectral Emission Radiant Intensity Max. Permissible Forward Current F Ι 100 mA e I = f (λ) I = f (T ) rel F A Single pulse, t = 20 μs p OHR00877 OHR00878 2 100 OHR00883 10 120 Ι e mA % Ι Ι (100mA) e F Ι rel 1 100 10 80 80 0 10 60 R = 450 K/W thjA 60 -1 10 40 40 -2 10 20 20 -3 0 10 0 0 1 2 3 4 0 20 40 60 80 100 ˚C 120 10 10 10 10 mA 10 750 800 850 900 950 nm 1000 T Ι A λ F Forward Current Permissible Pulse Handling I = f (V ) single pulse, t = 20 μs Capability I = f (t ), T = 25 °C F F p F p A duty cycle D = parameter OHR00886 OHR00881 4 1 10 10 mA A Ι F Ι D = 0.005 F 0.01 0.02 0 10 0.05 3 10 0.1 0.2 -1 10 0.5 DC 2 10 -2 10 t p t p D = Ι T F T -3 1 10 10 -5 -4 -3 -2 -1 0 1 2 01 2 3 4 5 6 V 8 10 10 10 10 10 10 10 s 10 t V p F Radiation Characteristics S = f (ϕ) el 40˚ 30˚ 20˚ 10˚ 0˚ OHL01660 ϕ 1.0 50˚ 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 2002-03-14 5 SFH 421, SFH 426 Maßzeichnung Package Outlines SFH 421 2.1 (0.083) 3.0 (0.118) 2.6 (0.102) 1.7 (0.067) 2.3 (0.091) 0.1 (0.004) (typ.) 0.9 (0.035) 0.7 (0.028) 2.1 (0.083) Cathode marking 0.18 (0.007) 0.6 (0.024) 0.12 (0.005) 0.4 (0.016) GPLY6724 SFH 426 (2.4 (0.094)) 1.1 (0.043) (2.85 (0.112)) 0.9 (0.035) 2.54 (0.100) Cathode spacing Anode (1.4 (0.055)) Cathode marking (R1) 4.2 (0.165) 3.8 (0.150) GPLY6880 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2002-03-14 6 3.4 (0.134) 3.0 (0.118) 2.8 (0.110) (2.9 (0.114)) 2.4 (0.094) (2.4) (0.095) (0.3 (0.012)) 4.2 (0.165) 3.7 (0.146) 3.8 (0.150) 3.8 (0.150) 3.3 (0.130) 1.1 (0.043) 4˚±1 3.4 (0.134) 0.5 (0.020) 0.7 (0.028) SFH 421, SFH 426 Löthinweise Soldering Conditions Bauform Tauch-, Schwall- und Schlepplötung Reflowlötung Types Dip, Wave and Drag Soldering Reflow Soldering Lötbad- Maximal Abstand Lötzonen- Maximale temperatur zulässige Lötstelle – temperatur Durchlaufzeit Lötzeit Gehäuse Temperature Max. Perm. Distance Temperature Max. Transit of the Soldering between of Soldering Time Soldering Time Solder Joint Zone Bath and Case ® TOPLED 260 °C 8 s – 245 °C 10 s SIDELED 260 °C 8 s – 245 °C 10 s Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical 1 2 components , may only be used in life-support devices or systems with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-03-14 7