Schnelle IR-Lumineszenzdiode (950 nm) im 5 mm Radial-Gehäuse High-Speed Infrared Emitter (950 nm) in 5 mm Radial Package SFH 4501, SFH 4502, SFH 4503 SFH 4501 SFH 4502 SFH 4503 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem WirkungsgradVery highly efficient GaAs-LED Hohe ZuverlässigkeitHigh reliability Gute spektrale Anpassung an Spectral match with silicon photodetectors Si-Fotoempfänger Anwendungen Applications IR-Fernsteuerung von Fernseh- und IR remote control of hi-fi and TV-sets, video Rundfunkgeräten, Videorecordern, tape recorders, dimmers LichtdimmernRemote control for steady and varying intensity Gerätefernsteuerungen für Gleich- und Sensor technology WechsellichtbetriebDiscrete interrupters Sensorik Diskrete Lichtschranken Typ Bestellnummer Gehäuse Type Ordering Code Package 3 SFH 4501 Q62702-P5061 5-mm-LED-Gehäuse (T 1 / ), schwarz eingefärbt, Anschluß im 4 1 2.54-mm-Raster ( / ’’), 10 SFH 4502 Q62702-P5062 Anodenkennzeichnung: kürzerer Anschluß 3 SFH 4503 Q62702-P5305 5 mm LED package (T 1 / ), black-colored epoxy resin lens, 4 1 solder tabs lead spacing 2.54 mm ( / ’’), 10 anode marking: short lead 2001-03-09 1 SFH 4501, SFH 4502, SFH 4503 Grenzwerte (T = 25 °C) A Maximum Ratings Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Betriebs- und Lagertemperatur T ; T – 40 … + 100 °C op stg Operating and storage temperature range Sperrspannung V 3V R Reverse voltage Durchlaßstrom I (DC) 100 mA F Forward current Stoßstrom, t = 10 μs, D = 0 I 2.2 A p FSM Surge current Verlustleistung P 180 mW tot Power dissipation Wärmewiderstand Sperrschicht - Umgebung, R 375 K/W thJA freie Beinchenlänge max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Kennwerte (T = 25 °C) A Characteristics Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Wellenlänge der Strahlung λ 950 nm peak Wavelength at peak emission I = 100 mA, t = 20 ms F p Spektrale Bandbreite bei 50% von I Δλ 40 nm max Spectral bandwidth at 50% of I max I = 100 m A, t = 20 ms F p Abstrahlwinkel ϕ Grad Half angle deg. SFH 4501 ± 7 SFH 4502 ± 18 SFH 4503 ± 4 2 Aktive Chipfläche 0.09 mm A Active chip area Abmessungen der aktiven Chipfläche L × B 0.3 × 0.3 mm Dimension of the active chip area L × W 2001-03-09 2 SFH 4501, SFH 4502, SFH 4503 Kennwerte (T = 25 °C) A Characteristics (cont’d) Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Schaltzeiten, I von 10% auf 90% und von 90% t , t 10 ns e r f auf 10%, bei I = 100 mA, t = 20 ms, R = 50 Ω F p L Switching times, Ι from 10% to 90% and from e 90% to 10%, I = 100 mA, t = 20 ms, R = 50 Ω F p L Kapazität C 35 pF o Capacitance V = 0 V, f = 1 MHz R Durchlaßspannung, Forward voltage I = 100 mA, t = 20 ms V 1.5 (≤ 1.8) V F p F I = 1 A, t = 100 μs V 3.2 (≤ 4.0) V F p F Sperrstrom, I 0.01 (≤ 10) μA R Reverse current V = 3 V R Gesamtstrahlungsfluß, Φ 32 mW e Total radiant flux I = 100 mA, t = 20 ms F p Temperaturkoeffizient von I bzw. Φ , TC – 0.44 %/K e e I I = 100 mA F Temperature coefficient of I or Φ , e e I = 100 mA F Temperaturkoeffizient von V , I = 100 mA TC – 1.5 mV/K F F V Temperature coefficient of V , I = 100 mA F F Temperaturkoeffizient von λ, I = 100 mA TC + 0.2 nm/K F λ I = 100 mA Temperature coefficient of λ, F 2001-03-09 3 SFH 4501, SFH 4502, SFH 4503 Strahlstärke I in Achsrichtung e gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity I in Axial Direction e at a solid angle of Ω = 0.01 sr Bezeichnung Symbol Werte Einheit Description Values Unit SFH 4501 SFH 4502 SFH 4503 Strahlstärke I 63 25 63 mW/sr e min Radiant intensity I 90 50 200 e typ I = 100 mA, t = 20 ms F p Strahlstärke I 550 310 1200 mW/sr e typ Radiant intensity I = 1 A, t = 100 μs F p 2001-03-09 4 SFH 4501, SFH 4502, SFH 4503 Ι e = f (I ) Relative Spectral Emission Radiant Intensity Max. Permissible Forward Current F Ι 100 mA e I = f (λ) I = f (T ) rel F A Single pulse, t = 20 μs p OHF00359 120 OHF00777 OHF00809 2 100 10 mA Ι F Ι erel Ι e 100 Ι e (100 mA) 80 80 0 60 10 R = 375 K/W thJA 60 -1 10 40 40 -2 10 20 20 -3 10 0 0 1 23 4 0 10 10 10 10 mA 10 800 850 900 950 1000 nm 1100 0 20 40 60 80 100 ˚C 120 Ι λ F T A Permissible Pulse Handling Forward Current I = f (V ) Capability I = f (τ), T = 25 °C, F F F A single pulse, t = 20 μs duty cycle D = parameter p OHF00041 1 10 OHF00784 4 10 t P A mA I t F P I Ι F D = F 5 3 T 10 T 2 10 D = 0.005 0.01 1 10 0.02 0 10 0.05 0 0.1 10 0.2 5 0.5 -1 1 10 -2 10 -3 -1 10 10 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 s 10 V F t p 2001-03-09 5 SFH 4501, SFH 4502, SFH 4503 Radiation Characteristics Ι = f (ϕ) rel SFH 4501 40˚ 30˚ 20˚ 10˚ 0˚ OHF00859 1.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ Radiation Characteristics Ι = f (ϕ) rel SFH 4502 40˚ 30˚ 20˚ 10˚ 0˚ OHF00810 1.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ Radiation Characteristics Ι = f (ϕ) rel SFH 4503 40˚ 30˚ 20˚ 10˚ 0˚ OHF01142 1.0 50˚ 0.8 60˚ 0.6 70˚ 0.4 80˚ 0.2 0 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 2001-03-09 6 ϕ ϕ ϕ SFH 4501, SFH 4502, SFH 4503 Maßzeichnung Package Outlines SFH 4501 Area not flat 9.0 (0.354) 8.2 (0.323) 0.6 (0.024) 7.8 (0.307) 0.4 (0.016) 5.9 (0.232) 7.5 (0.295) 5.5 (0.217) 0.6 (0.024) 1.8 (0.071) Anode 0.4 (0.016) 1.2 (0.047) 29.5 (1.161) 27.5 (1.083) GEXY6952 SFH 4502 Area not flat 7.8 (0.307) 5.9 (0.232) 5.5 (0.217) 7.5 (0.295) Anode 1.8 (0.071) Anode 0.6 (0.024) 1.2 (0.047) 9.0 (0.354) 29.0 (1.142) 0.4 (0.016) 27.0 (1.063) 8.2 (0.323) GEXY6718 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-03-09 7 2.54 (0.100) spacing 2.54 (0.100) spacing 0.6 (0.024) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016) ş5.1 (0.201) ş5.1 (0.201) ş4.8 (0.189) ş4.8 (0.189) SFH 4501, SFH 4502, SFH 4503 SFH 4503 9.0 (0.354) 8.2 (0.323) 7.8 (0.307) 5.9 (0.232) 5.5 (0.217) 7.5 (0.295) Area not flat 0.6 (0.024) 0.4 (0.016) 1.8 (0.071) 0.6 (0.024) 5.7 (0.224) 1.2 (0.047) 5.1 (0.201) 0.4 (0.016) 29 (1.142) 27 (1.063) Chip position GEXY6048 Anode Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-03-09 8 2.54 (0.100) spacing 0.8 (0.031) 0.4 (0.016) ş5.1 (0.201) ş4.8 (0.189) SFH 4501, SFH 4502, SFH 4503 Lötbedingungen Soldering Conditions Tauch-, Schwall- und Schlepplötung Kolbenlötung (mit 1,5-mm-Kolbenspitze) Dip, Wave and Drag Soldering Iron Soldering (with 1.5-mm-bit) Lötbad- Maximal Abstand Temperatur Maximale Abstand temperatur zulässige Lötstelle – des Kolbens zulässige Lötstelle – Lötzeit Gehäuse Lötzeit Gehäuse Temperature Max. Perm. Distance Temperature Max. Distance of the Soldering between of the Permissible between Soldering Time Solder Joint Soldering Iron Soldering Solder Joint Bath and Case Time and Case 260 °C 10 s ≥ 1.5 mm 300 °C3 s ≥ 1.5 mm Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical 1 2 components , may only be used in life-support devices or systems with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-03-09 9