IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4230 Wesentliche Merkmale Features • Punktlichtquelle mit hohem Wirkungsgrad bei  Point lightsource with high efficiency and small geringer Baugröße package 2 2  Chipgröße (emittierende Fläche) 1 x 1 mm  die-size (emitting area) 1 x 1 mm  max. Gleichstrom 1 A  max. DC-current 1 A  niedriger Wärmewiderstand (15 K/W)  Low thermal resistance (15 K/W)  Emissionswellenlänge 850 nm  Maximum of spectral emission at 850 nm  ESD-sicher bis 2 kV nach JESD22-A114-B  ESD save up to 2 kV acc. to JESD22-A114-B Anwendungen Applications  Infrarotbeleuchtung für CMOS Kameras  Infrared Illumination for CMOS cameras  Überwachungssysteme  Surveillance systems  IR-Datenübertragung  IR Data Transmission  Fahrer-Assistenz Systeme  Driver assistance systems  Maschinensicherheit  Machine security Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile Depending on the mode of operation, these hochkonzentrierte, nicht sichtbare Infrarot- devices emit highly concentrated non visible Strahlung, die gefährlich für das menschliche infrared light which can be hazardous to the Auge sein kann. Produkte, die diese Bauteile human eye. Products which incorporate these enthalten, müssen gemäß den Sicherheits- devices have to follow the safety precautions richtlinien der IEC-Norm 60825-1 / 62471 given in IEC 60825-1 / 62471. behandelt werden. 1) Typ Bestellnummer Gesamtstrahlungsfluss (I = 1A, t = 100 µs) F p 1) Type Ordering Code Total Radiant Flux Φ (mW) e SFH 4230 Q65110A4023 typ. 440 1) gemessen mit Ulbrichtkugel / measured with integrating sphere 2006-08-03 1 SFH 4230 Grenzwerte Maximum Ratings Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Betriebs- und Lagertemperatur T , T – 40 … + 100 °C op stg Operating and storage temperature range Sperrschichttemperatur T + 125 °C J Junction temperature Sperrspannung V 1 V R Reverse voltage Vorwärtsgleichstrom I 1 A F Forward current Stoßstrom, t < 1 ms, D = 0.2, T = 25 °C I 2 A p A FSM Surge current Leistungsaufnahme, T = 25 °C P 2.4 W A tot Power consumption Wärmewiderstand Sperrschicht - Lötstelle bei R 15 K/W thJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (T = 25 °C) A Characteristics Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Wellenlänge der Strahlung λ 850 nm peak Wavelength at peak emission I = 1 A, t = 10 ms F p Centroid-Wellenlänge der Strahlung λ 845 nm centroid Centroid wavelength I = 1 A, t = 10 ms F p Spektrale Bandbreite bei 50% von I ∆λ 40 nm max Spectral bandwidth at 50% of I max I = 1 A, t = 10 ms F p Abstrahlwinkel ϕ ± 60 Grad Half angle deg. 2 Aktive Chipfläche A 1 mm Active chip area Abmessungen der aktiven Chipfläche L × B 1 × 1 mm² Dimension of the active chip area L × W 2006-08-03 2 SFH 4230 Kennwerte (T = 25 °C) A Characteristics (cont’d) Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Schaltzeiten, I von 10% auf 90% und von 90% t , t 10 ns e r f auf 10%, I = 1 A, R = 50 Ω F L Switching times, Ι from 10% to 90% and from e 90% to 10%, I = 1 A, R = 50 Ω F L Durchlassspannung V 1.8 (< 2.4) V F Forward voltage I = 1 A, t = 100 µs F p Strahlstärke I 170 mW/sr e typ Radiant intensity I = 1 A, t = 100 µs F p Temperaturkoeffizient von I bzw. Φ TC – 0.5 %/K e e I Temperature coefficient of I or Φ e e I = 1 A, t = 10 ms F p Temperaturkoeffizient von V TC – 0.2 mV/K F V Temperature coefficient of V F I = 1 A, t = 10 ms F p Temperaturkoeffizient von λ TC + 0.2 nm/K λ,centroid Temperature coefficient of λ I = 1 A, t = 10 ms F p 2006-08-03 3 SFH 4230 1) Gesamtstrahlungsfluss Φ e 1) Total Radiant Flux Φ e Bezeichnung Symbol Werte Einheit Parameter Values Unit SFH 4230-CW SFH 4230-DW Gesamtstrahlungsfluss Φ 250 400 mW e min Total Radiant Flux Φ 500 800 mW e max I = 1 A, t = 100 µs F p 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics I = f (ϕ) rel 40˚ 30˚ 20˚ 10˚ 0˚ OHL01660 ϕ 1.0 50˚ 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 2006-08-03 4 SFH 4230 Relative spektrale Emission Durchlassstrom Relativer Gesamtstrahlungsfluss Relative Spectral Emission Forward Current Relative Total Radiant Flux I = f (λ) I = f (V ) Φ /Φ (1000mA) = f (I ) rel F F e e F Single pulse, t = 100 µs Single pulse, t = 100 µs p p OHL01714 OHL02830 1 OHF02843 1 100 10 10 Φ % e A I F Φ e (1000 mA) I rel 80 0 10 0 5 10 60 -1 10 5 40 -1 10 -2 10 20 5 -3 0 -2 10 10 700 750 800 850 nm 950 12 3 4 0 0.5 1 1.5 2 2.5 V 3 10 55 10 10 mA 10 V I λ F F Max. zulässiger Durchlassstrom Zulässige Impulsbelastbarkeit Max. Permissible Forward Current Permissible Pulse Handling I = f (T ), R = 15 K/W Capability I = f (t ), T < 85 °C, F A thJS F p A Duty cycle D = parameter OHF02801 OHF02803 1200 2.5 mA A I D = F I F 0.005 0.01 2.0 0.02 0.05 0.1 800 0.2 1.5 0.5 1 600 1.0 400 0.5 200 t P t P I F D = T T 0 0 -5 -4 -3 -2 -1 0 1 2 0˚ 20 40 60 80C 100 10 10 10 10 10 10 10 s 10 t T p S 2006-08-03 5 SFH 4230 1) Maßzeichnung Package Outlines 0...0.1 (0.004) 6.2 (0.244) A 5.8 (0.228) Heat sink Protection Diode R1.5 (0.059) Cathode 1.9 (0.075) 1.0 (0.039) C 1.7 (0.067) 0.8 (0.031) 2.0 (0.079) 1.6 (0.063) GPLY6192 Kathodenkennung: Markierung Cathode mark: mark Gewicht / Approx. weight: 0.2 g Gurtung / Polarität und Lage Verpackungseinheit 800/Rolle, ø180 mm Method of Taping / Polarity and Orientation Packing unit 800/reel, ø180 mm Cathode/Collector Side 4 (0.157) 0.3 (0.012) 1.55 (0.061) 2 (0.079) 0.3 (0.012) 6.35 (0.250) 1.9 (0.075) 8 (0.315) OHAY0508 1) Maße werden wie folgt angegeben: mm (inch) Dimensions are specified as follows: mm (inch) 2006-08-03 6 0.29 (0.011) 0.24 (0.009) 1.75 (0.069) 11.5 (0.453) 12.4 (0.488) 24 (0.945) 11.2 (0.441) 10.8 (0.425) 1.2 (0.047) 0.8 (0.031) (ø4.2 (0.165)) 7.35 (0.289) 7.2 (0.283) 6.8 (0.268) SFH 4230 Empfohlenes Lötpaddesign Recommended Solder Pad Design 12.0 (0.472) 11.6 (0.457) 11.6 (0.457) 1.6 (0.063) 3 Lötstellen ø2.5 (0.098) 3 solder points ø4.0 (0.157) ø4.0 (0.157) 1.6 (0.063) Heatsink attach Kupfer Thermisch optimiertes PCB Copper Thermal enhanced PCB Lötstopplack Footprint Solder resist Lötpasten Schablone Solder paste stencil Bare Copper Freies Kupfer OHAY0681 Achtung: Anode und Heatsink sind elektrisch verbunden Attention: Anode and Heatsink are electrically connected 2006-08-03 7 0.3 (0.012) 2.3 (0.091) 10 (0.394) 2.3 (0.091) SFH 4230 Lötbedingungen Vorbehandlung nach JEDEC Level 4 Soldering Conditions Preconditioning acc. to JEDEC Level 4 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B) OHLA0687 300 Maximum Solder Profile ˚C Recommended Solder Profile +0 ˚C 260 ˚C Minimum Solder Profile -5 ˚C 255 ˚C 250 T ±5 ˚C 245 ˚C 240 ˚C +5 ˚C 235 ˚C -0 ˚C 217 ˚C 10 s min 200 30 s max Ramp Down 150 6 K/s (max) 100 s max 120 s max 100 Ramp Up 50 3 K/s (max) 25 ˚C 0 0 50 100 150 200 250 s 300 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical 1 2 components , may only be used in life-support devices or systems with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2006-08-03 8