OSRAM SFH420

GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package SFH 420 SFH 425 SFH 420 SFH 425 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem WirkungsgradVery highly efficient GaAs-LED Gute Linearität ( I = f [I ]) bei hohen StrömenGood Linearity (I = f [I ]) at high currents e F e F Gleichstrom- (mit Modulation) oder DC (with modulation) or pulsed operations are Impulsbetrieb möglich possible Hohe ZuverlässigkeitHigh reliability Hohe ImpulsbelastbarkeitHigh pulse handling capability Oberflächenmontage geeignetSuitable for surface mounting (SMT) Gegurtet lieferbarAvailable on tape and reel SFH 420 Gehäusegleich mit SFH 320SFH 420 same package as SFH 320 SFH 425 Gehäusegleich mit SFH 325 SFH 425 same package as SFH 325 SFH 425: Nur für IR-Reflow-Lötung geeignet. SFH 425: Suitable only for IR-reflow soldering. Anwendungen Applications Miniaturlichtschranken für Gleich- und Miniature photointerrupters Wechsellichtbetrieb, LochstreifenleserIndustrial electronics IndustrieelektronikFor drive and control circuits „Messen/Steuern/Regeln“Automotive technology AutomobiltechnikSensor technology SensorikAlarm and safety equipment Alarm- und SicherungssystemeIR free air transmission IR-Freiraumübertragung Typ Bestellnummer Gehäuse Type Ordering Code Package Kathodenkennzeichnung: abgesetzte Ecke cathode marking: bevelled edge ® SFH 420 Q62702-P1690 TOPLED SFH 425 Q62702-P0330 SIDELED 2001-02-22 1 SFH 420, SFH 425 Grenzwerte (T = 25 °C) A Maximum Ratings Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Betriebs- und Lagertemperatur T ; T – 40 … + 100 °C op stg Operating and storage temperature range Sperrspannung V 5V R Reverse voltage Durchlaßstrom I 100 mA F Forward current Stoßstrom, τ = 10 μs, D = 0 I 3A FSM Surge current Verlustleistung P 160 mW tot Power dissipation Wärmewiderstand Sperrschicht - Umgebung bei R 450 K/W thJA 2 Montage auf FR4 Platine, Padgröße je 16 mm Thermal resistance junction - ambient mounted 2 on PC-board (FR4), padsize 16 mm each Wärmewiderstand Sperrschicht - Lötstelle bei R 200 K/W thJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (T = 25 °C) A Characteristics Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Wellenlänge der Strahlung λ 950 nm peak Wavelength at peak emission I = 100 mA, t = 20 ms F p Spektrale Bandbreite bei 50% von I Δλ 55 nm max Spectral bandwidth at 50% of I max I = 100 mA F Abstrahlwinkel ϕ± 60 Grad Half angle deg. 2 Aktive Chipfläche 0.09 mm A Active chip area Abmessungen der aktiven Chipfläche L × B 0.3 × 0.3 mm Dimensions of the active chip area L × W 2001-02-22 2 SFH 420, SFH 425 Kennwerte (T = 25 °C) A Characteristics (cont’d) Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Schaltzeiten, Ι von 10% auf 90% und von 90% t , t 0.5 μs e r f auf 10%, bei I = 100 mA, R = 50 Ω F L Switching times, Ι from 10% to 90% and from e 90% to 10%, I = 100 mA, R = 50 Ω F L Kapazität, C 25 pF o Capacitance V = 0 V, f = 1 MHz R Durchlaßspannung, Forward voltage I = 100 mA, t = 20 ms V 1.3 (≤ 1.5) V F p F I = 1 A, t = 100 μs V 1.9 (≤ 2.5) V F p F Sperrstrom, I 0.01 (≤ 1) μA R Reverse current V = 5 V R Gesamtstrahlungsfluß, Φ 14 mW e Total radiant flux I = 100 mA, t = 20 ms F p Temperaturkoeffizient von I bzw. Φ , TC – 0.55 %/K e e I I = 100 mA F Temperature coefficient of I or Φ , e e I = 100 mA F Temperaturkoeffizient von V , I = 100 mA TC – 1.5 mV/K F F V Temperature coefficient of V , I = 100 mA F F Temperaturkoeffizient von λ, I = 100 mA TC + 0.3 nm/K F λ Temperature coefficient of λ, I = 100 mA F 2001-02-22 3 SFH 420, SFH 425 Strahlstärke I in Achsrichtung e gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity I in Axial Direction e at a solid angle of Ω = 0.01 sr Bezeichnung Symbol Werte Einheit Parameter Values Unit Strahlstärke I > 2.5 mW/sr e Radiant intensity I = 100 mA, t = 20 ms F p Strahlstärke I 38 mW/sr e typ. Radiant intensity I = 1 A, t = 100 μs F p Radiation Characteristics S = f (ϕ) rel OHL01660 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 1.0 50˚ 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 0.6 0.4 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ 2001-02-22 4 SFH 420, SFH 425 Ι e Relative Spectral Emission Radiant Intensity = f (I ) Permissible Pulse Handling F Ι 100 mA e I = f (λ) Capability I = f (t ), duty cycle rel F p Single pulse, t = 20 μs D = parameter, T = 20 °C p A OHR00864 OHR01938 4 OHR00865 100 Ι 10 e Ι (100 mA) τ e mA I % F 1 τ 10 I D = F Ι 5 rel T 80 T D 0.005 = 0.01 60 0.02 3 0.05 10 0.1 0 10 40 0.2 5 20 0.5 -1 DC 10 2 0 10 -2 -1 0 1 880 920 960 1000 nm 1060 -5 -4 -3 -2 -1 0 1 2 10 10 10 A 10 10 10 10 10 10 10 10 s 10 λ Ι τ F Forward Current Max. Permissible Forward Current I = f (V ), single pulse, t = 20 μs I = f (T ) F F p F A OHR00883 OHR01554 1 120 10 mA A I F Ι F 100 0 10 80 R = 450 K/W thjA -1 10 60 40 -2 10 20 -3 10 0 0 20 40 60 80 100 ˚C 120 01 2 3 4 5 6 V 8 V T F A 2001-02-22 5 SFH 420, SFH 425 Maßzeichnung Package Outlines SFH 420 2.1 (0.083) 3.0 (0.118) 2.6 (0.102) 1.7 (0.067) 2.3 (0.091) 0.1 (0.004) (typ.) 0.9 (0.035) 0.7 (0.028) 2.1 (0.083) Cathode marking 0.18 (0.007) 0.6 (0.024) 0.12 (0.005) 0.4 (0.016) GPLY6724 SFH 425 (2.4 (0.094)) 1.1 (0.043) (2.85 (0.112)) 0.9 (0.035) 2.54 (0.100) Cathode spacing Anode (1.4 (0.055)) Cathode marking (R1) 4.2 (0.165) 3.8 (0.150) GPLY6880 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-02-22 6 3.4 (0.134) 3.0 (0.118) 2.8 (0.110) (2.9 (0.114)) 2.4 (0.094) (2.4) (0.095) (0.3 (0.012)) 4.2 (0.165) 3.7 (0.146) 3.8 (0.150) 3.8 (0.150) 3.3 (0.130) 1.1 (0.043) 4˚±1 3.4 (0.134) 0.5 (0.020) 0.7 (0.028) SFH 420, SFH 425 Löthinweise Soldering Conditions Bauform Tauch-, Schwall- und Schlepplötung Reflowlötung Types Dip, Wave and Drag Soldering Reflow Soldering Lötbad- Maximal Abstand Lötzonen- Maximale temperatur zulässige Lötstelle – temperatur Durchlaufzeit Lötzeit Gehäuse Temperature Max. Perm. Distance Temperature Max. Transit of the Soldering Time between of Soldering Time Soldering Bath Solder Joint Zone and Case TOPLED 260 °C 10 s – 245 °C 10 s SIDELED – – – ≥ 225 °C 10 s Zusätzliche Informationen über allgemeine Lötbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical 1 2 components , may only be used in life-support devices or systems with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 7