INTERNATIONAL RECTIFIER EMP50P12B
Description
POWER MODULE 3PHASE 50A 1200V
Part Number
EMP50P12B
Price
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Manufacturer
INTERNATIONAL RECTIFIER
Lead Time
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Category
PRODUCTS - E
Datasheet
4153797_1.pdf
760 KiB
Extracted Text
Bulletin I27148 08/06 EMP50P12B PIM+ Package: EMP Features: � Power Module: • NPT IGBTs 50A, 1200V • 10us Short Circuit capability � Square RBSOA � Low Vce (2.15Vtyp @ 50A, 25°C) (on) � Positive Vce temperature coefficient (on) • Gen III HexFred Technology � Low diode V (1.78Vtyp @ 50A, 25°C) F � Soft reverse recovery EMP – Inverter (EconoPack 2 outline compatible) • 2mΩ sensing resistors on all phase outputs and DCbus minus rail � T/C < 50ppm/°C Power Module schematic: Description The EMP50P12B is a Power Integrated Module for Motor Driver applications with embedded sensing resistors on all three-phase output currents. Each sensing resistor’s head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range. TM The device comes in the EMP package, fully compatible in Three phase inverter with current sensing length, width and height with EconoPack 2 outline. resistors on all output phases Power module frame pins mapping www.irf.com 1 EMP50P12B I27148 08/06 Pins mapping Symbol Lead Description DC IN+ DC Bus plus power input pin DC IN- DC Bus minus power input pin DC + DC Bus plus signal connection (Kelvin point) DC - DC Bus minus signal connection (Kelvin point) Th + Thermal sensor positive input Th - Thermal sensor negative input Sh + DC Bus minus series shunt positive input (Kelvin point) Sh - DC Bus minus series shunt negative input (Kelvin point) G1/2/3 Gate connections for high side IGBTs E1/2/3 Emitter connections for high side IGBTs (Kelvin points) R1/2/3 + Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points) R1/2/3 - Output current sensing resistor negative input (Motor side, Kelvin points) G4/5/6 Gate connections for low side IGBTs E4/5/6 Emitter connections for low side IGBTs (Kelvin points) OUT1/2/3 Three phase power output pins Absolute Maximum Ratings (T =25ºC) C Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to V , all currents are defined positive into any lead. DC- Thermal Resistance and Power Dissipation ratings are measured at still air conditions. Symbol Parameter Definition Min. Max. Units VDC DC Bus Voltage 0 1000 V V Collector Emitter Voltage 0 1200 CES I º 50 C @ 100C IGBTs continuous collector current (TC = 100 C) I º 100 C @ 25C IGBTs continuous collector current (TC = 25 C) I Pulsed Collector Current (Fig. 3, Fig. CT.5) 200 CM A º Inverter IF @ 100C Diode Continuous Forward Current (T = 100 C) 50 C º IF @ 25C Diode Continuous Forward Current (T = 25 C) 100 C IFM Diode Maximum Forward Current 200 V Gate to Emitter Voltage -20 +20 V GE P Power Dissipation (One transistor) 354 D @ 25°C W P º 142 D @ 100°C Power Dissipation (One transistor, TC = 100 C) MT Mounting Torque 3.5 Nm T J Operating Junction Temperature -40 +150 Power ºC Module TSTG Storage Temperature Range -40 +125 Vc-iso Isolation Voltage to Base Copper Plate -2500 +2500 V www.irf.com 2 EMP50P12B I27148 08/06 Electrical Characteristics: For proper operation the device should be used within the recommended conditions. T = 25°C (unless otherwise specified) J Symbol Parameter Definition Min. Typ. Max. Units Test Conditions Fig. V Collector To Emitter Breakdown Voltage 1200 V V = 0V, I = 250µA (BR)CES GE C ∆V Temperature Coeff. of Breakdown Voltage +1.2 º º (BR)CES / T V/C VGE = 0V, IC = 1mA (25 - 125 C) ∆ 2.15 2.55 I = 50A, V = 15V 5, 6 C GE V Collector To Emitter Saturation Voltage V CE(on) 2.70 3.78 IC = 100A, VGE = 15V 7, 9 2.45 3.22 º 10, 11 IC = 50A, VGE = 15V, TJ = 125 C V Gate Threshold Voltage 4.4 4.7 5.5 V GE(th) VCE = VGE, IC = 250µA 12 º º ∆VGE(th) / Tj Temp. Coeff. of Threshold Voltage -1.2 mV/C V = V , I = 1mA (25 - 125 C) ∆ CE GE C g Forward Trasconductance 29 33 38 S V = 50V, I = 50A, PW = 80µs fe CE C 500 V = 0V, V = 1200V GE CE ICES Zero Gate Voltage Collector Current 650 1350 µA º VGE = 0V, VCE = 1200V, TJ = 125 C º 4000 V = 0V, V = 1200V, T = 150 C GE CE J 1.78 2.1 I = 50A 8 C V Diode Forward Voltage Drop V FM 1.90 2.22 º 8 IC = 50A, TJ = 125 C I Diode Reverse Leakage Current 20 º RM µA VR = 1200V, TJ = 25 C IGES Gate To Emitter Leakage Current ±200 nA VGE = 20V R1/2/3 Sensing Resistors 1.98 2 2.02 mΩ Rsh DC bus minus series shunt resistor 1.98 2 2.02 General Description its top is the same as the EconoPack II, so that, with the The EMP module contains six IGBTs and HexFreds only re-layout of the main motherboard, this module can fit into the same mechanical fixings of the standard Diodes in a standard inverter configuration. IGBTs used EconoPack II package thus speeding up the device are the new NPT 1200V-50A (current rating measured at evaluation in an already existing driver. An important 100C°), generation V from International Rectifier; the feature of this new device is the presence of Kelvin HexFred diodes have been designed specifically as pair connections for all feedback and command signals elements for these power transistors. Thanks to the new between the board and the module with the advantage of design and technological realization, these devices do not having all emitter and resistor sensing independent from need any negative gate voltage for their complete turn off; the main power path. The final benefit is that all low power moreover the tail effect is also substantially reduced signal from/to the controlling board are unaffected by compared to competitive devices of the same family. This parasitic inductances or resistances inevitably present in feature tremendously simplifies the gate driving stage. the module power layout. The new package outline is Another innovative feature in this type of power modules is shown on bottom of page 1. Notice that because of high the presence of sensing resistors in the three output current spikes on those inputs the DC bus power pins are phases, for precise motor current sensing and short circuit doubled in size compared to the other power pins. Module protections, as well as another resistor of the same value technology uses the standard and well know DBC (Direct in the DC bus minus line, needed only for device Bondable Copper): over a thick Copper base an allumina protections purposes. A complete schematic of the EMP (Al O ) substrate with a 300µm copper foil on both side is module is shown on page 1 where all sensing resistors 2 3 placed and IGBTs and Diodes dies are directly soldered, have been clearly evidenced, a thermal sensor with through screen printing process. These dies are then negative temperature coefficient is also embedded in the device structure. bonded with a 15 mils aluminum wire for power and signal connections. All components are then completely covered The package chosen is mechanically compatible with the by a silicone gel for mechanical protection and electrical well known EconoPack outline, Also the height of the isolation purposes. plastic cylindrical nuts for the external PCB positioned on www.irf.com 3 EMP50P12B I27148 08/06 Switching Characteristics: For proper operation the device should be used within the recommended conditions. T = 25°C (unless otherwise specified) J Symbol Parameter Definition Min Typ Max Units Test Conditions Fig. I = 50A C Q Total Gate Charge (turn off) 400 411 g 23 = 600V Q Gate – Emitter Charge (turn off) 46 55 nC VCC ge CT1 Q Gate – Collector Charge (turn off) 181 200 gc V = 15V GE º Eon Turn on Switching Loss 2814 3220 I = 50A, V = 600V, T = 25 C CT4 C CC J µJ E Turn off Switching Loss 5293 5825 V = 15V, R =10Ω, L = 250µH WF1 off GE G E Total Switching Loss 8107 9145 Tail and Diode Rev. Recovery included WF2 tot º I = 50A, V = 600V, T = 125 C 13, E Turn on Switching Loss 3963 4415 C CC J on 15 CT4 E Turn off Switching Loss 7810 8965 µJ V = 15V, R =10Ω, L = 250µH off GE G WF1 E Total Switching Loss 11773 13380 WF2 tot Tail and Diode Rev. Recovery included td (on) Turn on delay time 66 72 14,16 º IC = 50A, VCC = 600V, TJ = 125 C Tr Rise time 72 83 CT4 ns td (off) Turn off delay time 593 641 WF1 VGE = 15V, RG =10Ω, L = 250µH Tf Fall time 95 117 WF2 C Input Capacitance 5884 6052 V = 30V ies CC C Output Capacitance 950 968 pF V = 0V 22 oes GE Cres Reverse Transfer Capacitance 167 193 f = 1MHz º T = 150 C, I =200A, V = 15V to 0V J C GE 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE CT2 VCC = 1000V, Vp = 1200V, RG = 5Ω º CT3 TJ = 150 C, VGE = 15V to 0V SCSOA Short Circuit Safe Operating Area 10 µs WF4 VCC = 900V, Vp= 1200V, RG = 5Ω 17,18 E Diode reverse recovery energy 693 1114 1535 º REC µJ T = 125 C J 19,20 trr Diode reverse recovery time 156 260 363 ns I = 50A, V = 600V, 21 F CC CT4 Irr Peak reverse recovery current 35 42 43 A V = 15V, R =10Ω, L = 250µH GE G WF3 Rth Each IGBT to copper plate thermal resistance 0.35 ºC/W JC_T Rth Each Diode to copper plate thermal resistance 0.70 º JC_D C/W See also fig.24 and 25 24,25 Module copper plate to heat sink thermal Rth 0.03 º C-H C/W resistance. Silicon grease applied = 0.1mm 100 I = 7A, V = 530V, fsw = 8kHz, T = 55 ºC C DC C PD1 150 I = 10A, V = 530V, fsw = 8kHz, T = 55 ºC C DC C Pdiss Total Dissipated Power W PD2 º 250 I = 10A, V = 530V, fsw = 16kHz T = 55 C, C DC C PD3 200 º IC = 20A, VDC = 530V, fsw = 4kHz, TC = 40 C www.irf.com 4 EMP50P12B I27148 08/06 Fig. 1 – Maximum DC collector Fig. 2 – Power Dissipation vs. Current vs. case temperature Case Temperature T = (ºC) T = (ºC) C C Fig. 3 – Forward SOA Fig. 4 – Reverse Bias SOA T = 25ºC; Tj ≤ 150ºC Tj = 150ºC, V = 15V C GE V = (V) V = (V) CE CE www.irf.com 5 EMP50P12B I27148 08/06 Fig. 5 – Typical IGBT Output Characteristics Fig. 6 – Typical IGBT Output haracteristics Tj = - 40ºC; tp = 500µs Tj = 25ºC; tp = 500µs V = (V) V = (V) CE CE Fig. 7 – Typical IGBT Output Characteristics Fig. 8 – Typical Diode Forward Characteristics Tj = 125ºC; tp = 500µs tp = 500µs V = (V) V = (V) CE F www.irf.com 6 EMP50P12B I27148 08/06 Fig. 9 – Typical V vs. V Fig. 10 – Typical V vs. V CE GE CE GE Tj = - 40ºC Tj = 25ºC V = (V) V = (V) GE GE Fig. 11 – Typical V vs. V Fig. 12 – Typical Transfer Characteristics CE GE Tj = 125ºC V = 20V; tp = 20µs CE V = (V) V = (V) GE GE www.irf.com 7 EMP50P12B I27148 08/06 Fig. 13 – Typical Energy Loss vs. I Fig. 14 – Typical Switching Time vs. I C C Tj = 125ºC; L = 250µH; V = 600V; Tj = 125ºC; L = 250µH; V = 600V; CE CE Rg = 10Ω; V = 15V Rg = 10Ω; V = 15V GE GE I = (A) I = (A) C C Fig. 15 – Typical Energy Loss vs. Rg Fig. 16 – Typical Switching Time vs. Rg Tj = 125ºC; L = 250µH; V = 600V; Tj = 125ºC; L = 250µH; V = 600V; CE CE I = 50A; V = 15V I = 50A; V = 15V CE GE CE GE Rg = (Ω) Rg = (Ω) www.irf.com 8 EMP50P12B I27148 08/06 Fig. 17 – Typical Diode I vs. I Fig. 18 – Typical Diode I vs. Rg RR F RR Tj = 125ºC I = 50A; Tj = 125ºC F I = (A) Rg = (Ω) F Fig. 19 – Typical Diode I vs. dI /dt Fig. 20 – Typical Diode Q RR F RR V = 600V; V = 15V; I = 50A; Tj = V = 600V; V = 15V; Tj = 125ºC DC GE F DC GE 125ºC dI /dt (A/µs) dI /dt (A/µs) F F www.irf.com 9 EMP50P12B I27148 08/06 Fig. 21 – Typical Diode E vs. I Fig. 22 – Typical Capacitance vs. V REC F CE Tj = 125ºC V = 0V; f = 1MHz GE I = (A) Vce = (V) F Fig. 23 – Typical Gate Charge vs. V Fig. TF1 – Thermal Sensor Resistance GE vs. Base-Plate Temperature I = 50A; L = 600µH; V = 600V C CC Q = (nC) T (ºC) G C www.irf.com 10 EMP50P12B I27148 08/06 Fig. 24 – Normalized Transient Thermal Impedance, Junction-to-copper plate (IGBTs) t1, Rectangular Pulse Duration (sec) Fig. 25 – Normalized Transient Impedance, Junction-to-copper plate (FRED diodes) t1, Rectangular Pulse Duration (sec) www.irf.com 11 EMP50P12B I27148 08/06 www.irf.com 12 EMP50P12B I27148 08/06 www.irf.com 13 EMP50P12B I27148 08/06 EMP family part number identification EMP 50 P 12 B 12 345 1- Package type 2- Current rating 3- Current sensing configuration P= on 3 phases Q= on 2 phases E= on 3 emitters F= on 2 emitters G= on 1 emitter 4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code A= Bridge brake B= Inverter C= Inverter + brake D= BBI (Bridge Brake Inverter) M= Matrix www.irf.com 14 EMP50P12B I27148 08/06 EMP50P12B case outline and dimensions Data and specifications subject to change without notice This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR’s Web Site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105 TAC Fax: (310) 252 7309 Visit us at www.irf.com for sales contact information 01/03 Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 2003 International Rectifier - Printed in Italy 08-06 - Rev. 1.9 www.irf.com 15
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