Bulletin I27181 rev 1.5 08/05 EMP15P12D PIM+ EMP Features: Package: � Power Module: • NPT IGBTs 15A, 1200V • 10us Short Circuit capability � Square RBSOA � Low Vce (2.7Vtyp @ 15A, 25°C) (on) � Positive Vce temperature coefficient (on) • Gen III HexFred Technology � Low diode V (2.32Vtyp @ 15A, 25°C) F � Soft reverse recovery EMP – Bridge Brake inverter (EconoPack 2 outline compatible) • 10mΩ sensing resistors on all phase outputs and DCbus minus rail � Thermal coefficient < 50ppm/°C Power Module schematic: DC+ DC+ DC+ (signal) OUT IN Description The EMP15P12D is a Power Integrated Module for Motor IN1 Out 1 Driver applications with embedded sensing resistors on all BRK IN2 Out 2 three-phase output currents. IN3 Out 3 Each sensing resistor’s head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. DC- DC- (signal) Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range. Three phase bridge brake inverter with current sensing resistors on all output phases and thermistor TM The device comes in the EMP package, fully compatible in length, width and height with EconoPack 2 outline. Power module frame pins mapping DC OUT+ DC IN+ OUT1 IN1 OUT2 IN2 OUT3 IN3 DC IN- BRK www.irf.com 1 EMP15P12D I27181 rev 1.5 08/05 Pins mapping Symbol Lead Description IN1/2/3 Diode Bridge power input pins DC OUT+ DC Bus plus power output pin DC IN+ DC Bus plus power input pin DC IN- DC Bus minus power input pin DC + DC Bus plus signal connection (Kelvin point) DC - DC Bus minus signal connections (Kelvin points) BRK Brake power output pin Brk Brake signal connection (Kelvin point) Th + Thermal sensor positive input Th - Thermal sensor negative input G1/2/3 Gate connections for high side IGBTs E1/2/3 Emitter connections for high side IGBTs (Kelvin points) Gb Gate connection for brake IGBT (Kelvin point) Eb Emitter connection for brake IGBT (Kelvin point) R1/2/3 + Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points) R1/2/3 - Output current sensing resistor negative input (Motor side, Kelvin points) G4/5/6 Gate connections for low side IGBTs E4/5/6 Emitter connections for low side IGBTs (Kelvin points) OUT1/2/3 Three phase power output pins General Description The EMP module contains six IGBTs and HexFreds its top is the same as the EconoPack II, so that, with the Diodes in a standard inverter configuration. IGBTs used only re-layout of the main motherboard, this module can fit into the same mechanical fixings of the standard are the new NPT 1200V-15A (current rating measured at EconoPack II package thus speeding up the device 100C°), generation V from International Rectifier; the evaluation in an already existing driver. An important HexFred diodes have been designed specifically as pair feature of this new device is the presence of Kelvin elements for these power transistors. Thanks to the new connections for all feedback and command signals design and technological realization, these devices do not between the board and the module with the advantage of need any negative gate voltage for their complete turn off; having all emitter and resistor sensing independent from moreover the tail effect is also substantially reduced the main power path. The final benefit is that all low power compared to competitive devices of the same family. This signal from/to the controlling board are unaffected by feature tremendously simplifies the gate driving stage. parasitic inductances or resistances inevitably present in Another innovative feature in this type of power modules is the module power layout. The new package outline is the presence of sensing resistors in the three output shown on bottom of page 1. Notice that because of high phases, for precise motor current sensing and short circuit current spikes on those inputs the DC bus power pins are protections, as well as another resistor of the same value doubled in size compared to the other power pins. Module in the DC bus minus line, needed only for device technology uses the standard and well know DBC (Direct protections purposes. A complete schematic of the EMP Bondable Copper): over a thick Copper base an allumina module is shown on page 1 where all sensing resistors have been clearly evidenced, a thermal sensor with (Al O ) substrate with a 300µm copper foil on both side is 2 3 placed and IGBTs and Diodes dies are directly soldered, negative temperature coefficient is also embedded in the device structure. through screen printing process. These dies are then bonded with a 15 mils aluminum wire for power and signal The package chosen is mechanically compatible with the connections. All components are then completely covered well known EconoPack outline, Also the height of the by a silicone gel for mechanical protection and electrical plastic cylindrical nuts for the external PCB positioned on isolation purposes. www.irf.com 2 EMP15P12D I27181 rev 1.5 08/05 Absolute Maximum Ratings (T =25ºC) C Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to V , all currents are defined positive into any lead. DC- Thermal Resistance and Power Dissipation ratings are measured at still air conditions. Symbol Parameter Definition Min. Max. Units V DC Bus Voltage 0 1000 DC V VCES Collector Emitter Voltage 0 1200 º IC @ 100C IGBTs continuous collector current (T = 100 C, fig. 1) 15 C I º 30 C @ 25C IGBTs continuous collector current (T = 25 C,fig 1) C I Pulsed Collector Current (Fig. 3, Fig. CT.5) 60 CM A Inverter and I º 15 F @ 100C Diode Continuous Forward Current (TC = 100 C) Brake I Diode Continuous Forward Current (T = 25 ºC) 30 F @ 25C C IFM Diode Maximum Forward Current 60 VGE Gate to Emitter Voltage -20 +20 V PD @ 25°C Power Dissipation (One transistor) 140 W P º 55 D @ 100°C Power Dissipation (One transistor, TC = 100 C) V º 1400 RRM repetitive peak reverse voltage (Tj = 150 C) º Tj = 150 C V Irrm(max)=5mA V non repetitive peak reverse voltage 1500 RSM I º º Rect conduction angle 45 o Diode Continuous Forward Current (TC = 100 C, 120 ) 100% V reapplied 225 A RRM One-cycle forward. Non-repetitive on state Bridge I FSM surge current (t=10ms, Initial T = 150ºC) j No voltage reapplied 270 100% V reapplied 253 RRM 2 2 2 I t º A s Current I t for fusing (t=10ms, Initial Tj = 150 C) No voltage reapplied 365 2 2 2 I √t º 3650 A √s Current I √t for fusing (t=0.1 to 10ms, no voltage reapplied, Initial Tj = 150 C) MT Mounting Torque 3.5 Nm T J Operating Junction Temperature -40 +150 Power ºC Module T Storage Temperature Range -40 +125 STG Vc-iso Isolation Voltage to Base Copper Plate -2500 +2500 V www.irf.com 3 EMP15P12D I27181 rev 1.5 08/05 Electrical Characteristics: Inverter and Brake For proper operation the device should be used within the recommended conditions. T = 25°C (unless otherwise specified) J Symbol Parameter Definition Min. Typ. Max. Units Test Conditions Fig. V Collector To Emitter Breakdown Voltage 1200 V V = 0V, I = 250µA (BR)CES GE C Temperature Coeff. of Breakdown Voltage +1.2 º º ∆V(BR)CES / T V/C VGE = 0V, IC = 1mA (25 - 125 C) ∆ 2.70 3.00 IC = 15A, VGE = 15V 5, 6 V Collector To Emitter Saturation Voltage V CE(on) 3.74 4.24 IC = 30A, VGE = 15V 7, 9 3.14 3.61 º 10, 11 IC = 15A, VGE = 15V, TJ = 125 C V Gate Threshold Voltage 4.68 4.89 5.30 V GE(th) VCE = VGE, IC = 250µA 12 º º ∆V Temp. Coeff. of Threshold Voltage -9.80 mV/C V = V , I = 1mA (25 - 125 C) GE(th) / ∆Tj CE GE C g Forward Trasconductance 8 9 10 S V = 50V, I = 15A, PW = 80µs fe CE C 125 V = 0V, V = 1200V GE CE ICES Zero Gate Voltage Collector Current µA º 376 1110 V = 0V, V = 1200V, T = 125 C GE CE J º 2000 V = 0V, V = 1200V, T = 150 C GE CE J 2.32 2.52 I = 15A C V Diode Forward Voltage Drop V FM 8 2.47 2.64 º IC = 15A, TJ = 125 C ± IGES Gate To Emitter Leakage Current ±100 nA V = 20V GE R1/2/3 Sensing Resistors 9.9 10 10.1 mΩ Electrical Characteristics: Bridge For proper operation the device should be used within the recommended conditions. T = 25°C (unless otherwise specified) J Symbol Parameter Definition Min. Typ. Max. Units Test Conditions Fig. 1.24 1.76 t = 400µs, I = 30A p pk V Forward Voltage Drop V 24 FM 1.08 1.27 tp = 400µs, Ipk = 15A º VF(TO) Threshold voltage 0.78 V T = 125 C J I Reverse Leakage Current 5 mA º V = 1200V rm TJ = 125 C R www.irf.com 4 EMP15P12D I27181 rev 1.5 08/05 Switching Characteristics: Inverter and Brake For proper operation the device should be used within the recommended conditions. T = 25°C (unless otherwise specified) J Symbol Parameter Definition Min Typ Max Units Test Conditions Fig. IC = 15A Qg Total Gate Charge (turn on) 84 127 23 nC V = 600V Q Gate – Emitter Charge (turn on) 10 15 CC ge CT1 Q Gate – Collector Charge (turn on) 43 64 gc VGE = 15V º Eon Turn on Switching Loss 838 1207 I = 15A, V = 600V, T = 25 C CT4 C CC J µJ E Turn off Switching Loss 632 900 V = 15V, R =10Ω, L = 500µH WF1 off GE G E Total Switching Loss 1470 2107 Tail and Diode Rev. Recovery included WF2 tot º I = 15A, V = 600V, T = 125 C 13, E Turn on Switching Loss 1154 1512 C CC J on 15 µJ CT4 E Turn off Switching Loss 933 1030 V = 15V, R =10Ω, L = 500µH off GE G WF1 Etot Total Switching Loss 2087 2542 WF2 Tail and Diode Rev. Recovery included td (on) Turn on delay time 98 104 14,16 º IC = 15A, VCC = 600V, TJ = 125 C Tr Rise time 14 25 CT4 ns td (off) Turn off delay time 132 142 WF1 VGE = 15V, RG =10Ω, L = 500µH Tf Fall time 226 247 WF2 Cies Input Capacitance 1323 VCC = 30V C Output Capacitance 255 pF V = 0V 22 oes GE Cres Reverse Transfer Capacitance 37 f = 1MHz º T = 150 C, I =60A, V = 15V to 0V J C GE 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE CT2 VCC = 1000V, Vp = 1200V, RG = 5Ω º CT3 TJ = 150 C, VGE = 15V to 0V SCSOA Short Circuit Safe Operating Area 10 µs WF4 VCC = 1000V, Vp= 1200V, RG = 5Ω 17,18 E Diode reverse recovery energy 711 1263 µJ º REC TJ = 125 C 19,20 Trr Diode reverse recovery time 113 300 ns I = 15A, V = 600V, 21 F CC CT4 Irr Peak reverse recovery current 36 41 A V = 15V, R =10Ω, L = 500µH GE G WF3 º RthJ-C_T Each IGBT to copper plate thermal resistance 0.9 C/W Rth Each Diode to copper plate thermal resistance 1.54 ºC/W 25,26 J-C_D See also fig. 25, 26 Module copper plate to heat sink thermal Rth 0.03 º C-H C/W resistance. Silicon grease applied = 0.1mm www.irf.com 5 EMP15P12D I27181 rev 1.5 08/05 Fig. 1 – Maximum DC collector Fig. 2 – Power Dissipation vs. Current vs. case temperature Case Temperature T = (ºC) T = (ºC) C C Fig. 3 – Forward SOA Fig. 4 – Reverse Bias SOA T = 25ºC; Tj ≤ 150ºC Tj = 150ºC, V = 15V C GE V = (V) V = (V) CE CE www.irf.com 6 EMP15P12D I27181 rev 1.5 08/05 Fig. 5 – Typical IGBT Output Characteristics Fig. 6 – Typical IGBT Output Characteristics Tj = - 40ºC; tp = 300µs Tj = 25ºC; tp = 300µs V = (V) V = (V) CE CE Fig. 7 – Typical IGBT Output Characteristics Fig. 8 – Typical Diode Forward Tj = 125ºC; tp = 300µs Characteristics tp = 300µs V = (V) V = (V) CE F www.irf.com 7 EMP15P12D I27181 rev 1.5 08/05 Fig. 9 – Typical V vs. V Fig. 10 – Typical V vs. V CE GE CE GE Tj = - 40ºC Tj = 25ºC V = (V) V = (V) GE GE Fig. 11 – Typical V vs. V Fig. 12 – Typical Transfer Characteristics CE GE Tj = 125ºC V = 20V; tp = 20µs CE V = (V) V = (V) GE GE www.irf.com 8 EMP15P12D I27181 rev 1.5 08/05 Fig. 13 – Typical Energy Loss vs. I Fig. 14 – Typical Switching Time vs. I C C Tj = 125ºC; L = 500µH; V = 600V; Tj = 125ºC; L = 500µH; V = 600V; CE CE Rg = 10Ω; V = 15V Rg = 10Ω; V = 15V GE GE I = (A) I = (A) C C Fig. 15 – Typical Energy Loss vs. Rg Fig. 16 – Typical Switching Time vs. Rg Tj = 125ºC; L = 500µH; V = 600V; Tj = 125ºC; L = 500µH; V = 600V; CE CE I = 15A; V = 15V I = 15A; V = 15V CE GE CE GE Rg = (Ω) Rg = (Ω) www.irf.com 9 EMP15P12D I27181 rev 1.5 08/05 Fig. 17 – Typical Diode I vs. I Fig. 18 – Typical Diode I vs. Rg RR F RR Tj = 125ºC I = 15A; Tj = 125ºC F I = (A) Rg = (Ω) F Fig. 19 – Typical Diode I vs. dI /dt Fig. 20 – Typical Diode Q RR F RR V = 600V; V = 15V; I = 15A; Tj = V = 600V; V = 15V; Tj = 125ºC DC GE F DC GE 125ºC dI /dt (A/µs) dI /dt (A/µs) F F www.irf.com 10 EMP15P12D I27181 rev 1.5 08/05 Fig. 21 – Typical Diode E vs. I Fig. 22 – Typical Capacitance vs. V REC F CE Tj = 125ºC V = 0V; f = 1MHz GE I = (A) V = (V) F CE Fig. 23 – Typical Gate Charge vs. V Fig. 24 – On state Voltage Drop characteristic GE I = 15A; L = 600µH; V = 600V V vs I t = 400µs C CC FM F p Q = (nC) V = (V) G FM www.irf.com 11 EMP15P12D I27181 rev 1.5 08/05 Fig. 25 – Normalized Transient Impedance, Junction-to-copper plate (IGBTs) t1, Rectangular Pulse Duration (sec) Fig. 26 – Normalized Transient Impedance, Junction-to-copper plate (FRED diodes) t1, Rectangular Pulse Duration (sec) www.irf.com 12 EMP15P12D I27181 rev 1.5 08/05 www.irf.com 13 EMP15P12D I27181 rev 1.5 08/05 www.irf.com 14 EMP15P12D I27181 rev 1.5 08/05 EMP family part number identification EMP 15 P 12 D 1 2 3 4 5 1- Package type 2- Current rating 3- Current sensing configuration P= on 3 phases Q= on 2 phases E= on 3 emitters F= on 2 emitters G= on 1 emitter 4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code A= Bridge brake B= Inverter C= Inverter + brake D= BBI (Bridge Brake Inverter) M= Matrix www.irf.com 15 EMP15P12D I27181 rev 1.5 08/05 EMP15P12D case outline and dimensions Data and specifications subject to change without notice This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR’s Web Site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105 TAC Fax: (310) 252 7309 Visit us at www.irf.com for sales contact information 06/03 Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 2003 International Rectifier - Printed in Italy 08-05 - Rev. 1.5 www.irf.com 16