Bulletin I27149 08/07 EMP25P12B PIM+ EMP Features: Package: � Power Module: • NPT IGBTs 25A, 1200V • 10us Short Circuit capability � Square RBSOA � Low Vce (2.28Vtyp @ 25A, 25°C) (on) � Positive Vce temperature coefficient (on) • Gen III HexFred Technology � Low diode V (1.76Vtyp @ 25A, 25°C) F � Soft reverse recovery EMP – Inverter (EconoPack 2 outline compatible) • 4mΩ sensing resistors on all phase outputs and DCbus minus rail � Thermal coefficient < 50ppm/°C Power Module schematic: Description The EMP25P12B is a Power Integrated Module for Motor Driver applications with embedded sensing resistors on all three-phase output currents. Each sensing resistor’s head is directly bonded to an external pin to reduce parasitic effects and achieve high accuracy on feedback voltages. Since their thermal coefficient is very low, no value compensation is required across the complete operating temperature range. TM The device comes in the EMP package, fully compatible in Three phase inverter with current sensing length, width and height with EconoPack 2 outline. resistors on all output phases and thermistor Power module frame pins mapping www.irf.com 1 EMP25P12B I27149 08/07 Pins Mapping Symbol Lead Description DC IN+ DC Bus plus power input pin DC IN- DC Bus minus power input pin DC + DC Bus plus signal connection (Kelvin point) DC - DC Bus minus signal connection (Kelvin point) Th + Thermal sensor positive input Th - Thermal sensor negative input Sh + DC Bus minus series shunt positive input (Kelvin point) Sh - DC Bus minus series shunt negative input (Kelvin point) G1/2/3 Gate connections for high side IGBTs E1/2/3 Emitter connections for high side IGBTs (Kelvin points) R1/2/3 + Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points) R1/2/3 - Output current sensing resistor negative input (Motor side, Kelvin points) G4/5/6 Gate connections for low side IGBTs E4/5/6 Emitter connections for low side IGBTs (Kelvin points) OUT1/2/3 Three phase power output pins Absolute Maximum Ratings (T =25ºC) C Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to V , all currents are defined positive into any lead. DC- Thermal Resistance and Power Dissipation ratings are measured at still air conditions. Symbol Parameter Definition Min. Max. Units V DC Bus Voltage 0 1000 DC V V Collector Emitter Voltage 0 1200 CES I º 25 C @ 100C IGBTs continuous collector current (TC = 100 C, fig. 1) º IC @ 25C IGBTs continuous collector current (T = 25 C,fig 1) 50 C ICM Pulsed Collector Current (Fig. 3, Fig. CT.5) 100 A Inverter º IF @ 100C Diode Continuous Forward Current (T = 100 C) 25 C I º 50 F @ 25C Diode Continuous Forward Current (TC = 25 C) I Diode Maximum Forward Current 100 FM V Gate to Emitter Voltage -20 +20 V GE PD @ 25°C Power Dissipation (One transistor) 192 W º PD @ 100°C Power Dissipation (One transistor, T = 100 C) 77 C MT Mounting Torque 3.5 Nm T J Operating Junction Temperature -40 +150 Power ºC Module T Storage Temperature Range -40 +125 STG Vc-iso Isolation Voltage to Base Copper Plate -2500 +2500 V www.irf.com 2 EMP25P12B I27149 08/07 Electrical Characteristics: For proper operation the device should be used within the recommended conditions. T = 25°C (unless otherwise specified) J Symbol Parameter Definition Min. Typ. Max. Units Test Conditions Fig. V(BR)CES Collector To Emitter Breakdown Voltage 1200 V V = 0V, I = 250µA GE C ∆V Temperature Coeff. of Breakdown Voltage +1.2 V/ºC V = 0V, I = 1mA (25 - 125 ºC) (BR)CES / ∆T GE C 2.28 2.56 I = 25A, V = 15V 5, 6 C GE VCE(on) Collector To Emitter Saturation Voltage 3.2 3.65 V I = 50A, V = 15V 7, 9 C GE º 2.74 3.10 I = 25A, V = 15V, T = 125 C 10, 11 C GE J VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 V V = V , I = 250µA CE GE C 12 ∆V Temp. Coeff. of Threshold Voltage -1.2 º = V , I = 1mA (25 - 125 ºC) GE(th) / ∆Tj mV/C VCE GE C g Forward Trasconductance 14.8 16.9 19.0 S V = 50V, I = 25A, PW = 80µs fe CE C 250 V = 0V, V = 1200V GE CE ICES Zero Gate Voltage Collector Current 325 675 µA º VGE = 0V, VCE = 1200V, TJ = 125 C º 2000 V = 0V, V = 1200V, T = 150 C GE CE J 1.76 2.06 IC = 25A 8 V Diode Forward Voltage Drop V FM º 1.87 2.18 I = 25A, T = 125 C 8 C J I Diode Reverse Leakage Current 20 µA = 1200V, T = 25 ºC RM VR J I Gate To Emitter Leakage Current ±100 nA ± GES VGE = 20V R1/2/3 Sensing Resistors 3.96 4 4.04 mΩ Rsh DC bus minus series shunt resistor 3.96 4 4.04 General Description The EMP module contains six IGBTs and HexFreds its top is the same as the EconoPack II, so that, with the Diodes in a standard inverter configuration. IGBTs used only re-layout of the main motherboard, this module can fit into the same mechanical fixings of the standard are the new NPT 1200V-25A (current rating measured at EconoPack II package thus speeding up the device 100C°), generation V from International Rectifier; the evaluation in an already existing driver. An important HexFred diodes have been designed specifically as pair feature of this new device is the presence of Kelvin elements for these power transistors. Thanks to the new connections for all feedback and command signals design and technological realization, these devices do not between the board and the module with the advantage of need any negative gate voltage for their complete turn off; having all emitter and resistor sensing independent from moreover the tail effect is also substantially reduced the main power path. The final benefit is that all low power compared to competitive devices of the same family. This signal from/to the controlling board are unaffected by feature tremendously simplifies the gate driving stage. parasitic inductances or resistances inevitably present in Another innovative feature in this type of power modules is the module power layout. The new package outline is the presence of sensing resistors in the three output shown on bottom of page 1. Notice that because of high phases, for precise motor current sensing and short circuit current spikes on those inputs the DC bus power pins are protections, as well as another resistor of the same value doubled in size compared to the other power pins. Module in the DC bus minus line, needed only for device technology uses the standard and well know DBC (Direct protections purposes. A complete schematic of the EMP Bondable Copper): over a thick Copper base an allumina module is shown on page 1 where all sensing resistors (Al O ) substrate with a 300µm copper foil on both side is have been clearly evidenced, a thermal sensor with 2 3 placed and IGBTs and Diodes dies are directly soldered, negative temperature coefficient is also embedded in the through screen printing process. These dies are then device structure. bonded with a 15 mils aluminum wire for power and signal The package chosen is mechanically compatible with the connections. All components are then completely covered well known EconoPack outline, Also the height of the by a silicone gel for mechanical protection and electrical plastic cylindrical nuts for the external PCB positioned on isolation purposes. www.irf.com 3 EMP25P12B I27149 08/07 Switching Characteristics: For proper operation the device should be used within the recommended conditions. T = 25°C (unless otherwise specified) J Symbol Parameter Definition Min Typ Max Units Test Conditions Fig. I = 25A C Q Total Gate Charge (turn on) 169 254 g 23 = 600V Q Gate – Emitter Charge (turn on) 19 29 nC VCC ge CT1 Q Gate – Collector Charge (turn on) 82 123 gc V = 15V GE 1.9 3.6 º Eon Turn on Switching Loss I = 25A, V = 600V, T = 25 C CT4 C CC J 1.3 2.0 mJ E Turn off Switching Loss V = 15V, R =20Ω, L = 200µH WF1 off GE G 3.2 5.6 E Total Switching Loss Tail and Diode Rev. Recovery included WF2 tot 2.7 4.6 º I = 25A, V = 600V, T = 125 C 13, E Turn on Switching Loss C CC J on 15 2.0 2.3 mJ CT4 E Turn off Switching Loss V = 15V, R =20Ω, L = 200µH off GE G WF1 4.7 6.9 E Total Switching Loss WF2 tot Tail and Diode Rev. Recovery included 192 210 td (on) Turn on delay time 14,16 º IC = 25A, VCC = 600V, TJ = 125 C 33 49 Tr Rise time CT4 ns 213 227 td (off) Turn off delay time WF1 VGE = 15V, RG =20Ω, L = 200µH 210 379 Tf Fall time WF2 C Input Capacitance 2200 V = 30V ies CC C Output Capacitance 210 PF V = 0V 22 oes GE Cres Reverse Transfer Capacitance 85 f = 1MHz º T = 150 C, I =100A, V = 15V to 0V J C GE 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE CT2 VCC = 1000V, Vp = 1200V, RG = 5Ω º CT3 TJ = 150 C, VGE = 15V to 0V SCSOA Short Circuit Safe Operating Area 10 µs WF4 VCC = 1000V, Vp= 1200V, RG = 5Ω 17,18 E Diode reverse recovery energy 1820 2400 º REC µJ T = 125 C J 19,20 Trr Diode reverse recovery time 300 ns I = 25A, V = 600V, 21 F CC CT4 Irr Peak reverse recovery current 25 32 A V = 15V, R =20Ω, L = 200µH GE G WF3 Rth Each IGBT to copper plate thermal resistance 0.65 ºC/W JC_T Rth Each Diode to copper plate thermal resistance 0.95 º JC_D C/W See also fig.24 and 25 24,25 Module copper plate to heat sink thermal Rth 0.03 º C-H C/W resistance. Silicon grease applied = 0.1mm www.irf.com 4 EMP25P12B I27149 08/07 Fig. 1 – Maximum DC collector Fig. 2 – Power Dissipation vs. Current vs. case temperature Case Temperature T = (ºC) T = (ºC) C C Fig. 3 – Forward SOA Fig. 4 – Reverse Bias SOA T = 25ºC; Tj ≤ 150ºC Tj = 150ºC, V = 15V C GE V = (V) V = (V) CE CE www.irf.com 5 EMP25P12B I27149 08/07 Fig. 5 – Typical IGBT Output Characteristics Fig. 6 – Typical IGBT Output Characteristics Tj = - 40ºC; tp = 300µs Tj = 25ºC; tp = 300µs V = (V) CE V = (V) CE Fig. 7 – Typical IGBT Output Characteristics Fig. 8 – Typical Diode Forward Characteristics Tj = 125ºC; tp = 300µs tp = 300µs V = (V) CE V = (V) F www.irf.com 6 EMP25P12B I27149 08/07 Fig. 9 – Typical V vs. V Fig. 10 – Typical V vs. V CE GE CE GE Tj = - 40ºC Tj = 25ºC V = (V) GE V = (V) GE Fig. 11 – Typical V vs. V CE GE Fig. 12 – Typical Transfer Characteristics Tj = 125ºC V = 20V; tp = 20µs CE V = (V) GE V = (V) GE www.irf.com 7 EMP25P12B I27149 08/07 Fig. 13 – Typical Energy Loss vs. I Fig. 14 – Typical Switching Time vs. I C C Tj = 125ºC; L = 200µH; V = 600V; Tj = 125ºC; L = 200µH; V = 600V; CE CE Rg = 10Ω; V = 15V Rg = 10Ω; V = 15V GE GE I = (A) C I = (A) C Fig. 15 – Typical Energy Loss vs. Rg Fig. 16 – Typical Switching Time vs. Rg Tj = 125ºC; L = 200µH; V = 600V; CE Tj = 125ºC; L = 200µH; V = 600V; CE I = 25A; V = 15V CE GE I = 25A; V = 15V CE GE Rg = (Ω) Rg = (Ω) www.irf.com 8 EMP25P12B I27149 08/07 Fig. 17 – Typical Diode I vs. I Fig. 18 – Typical Diode I vs. Rg RR F RR Tj = 125ºC I = 25A; Tj = 125ºC F Rg = (Ω) I = (A) F Fig. 20 – Typical Diode Q RR Fig. 19 – Typical Diode I vs. dI /dt RR F V = 600V; V = 15V; Tj = 125ºC DC GE V = 600V; V = 15V; I = 25A; Tj = 125ºC DC GE F dI /dt (A/µs) F dI /dt (A/µs) F www.irf.com 9 EMP25P12B I27149 08/07 Fig. 21 – Typical Diode E vs. I Fig. 22 – Typical Capacitance vs. V REC F CE Tj = 125ºC V = 0V; f = 1MHz GE V = (V) CE I = (A) F Fig. TF1 – Thermal Sensor Resistance Fig. 23 – Typical Gate Charge vs. V GE vs. Base-Plate Temperature I = 25A; L = 600µH; V = 600V C CC T (ºC) Q = (nC) C G www.irf.com 10 EMP25P12B I27149 08/07 Fig. 24 – Normalized Transient Thermal Impedance, Junction-to-copper plate (IGBTs) t1, Rectangular Pulse Duration (sec) Fig. 25 – Normalized Transient Impedance, Junction-to-copper plate (FRED diodes) t1, Rectangular Pulse Duration (sec) www.irf.com 11 EMP25P12B I27149 08/07 www.irf.com 12 EMP25P12B I27149 08/07 www.irf.com 13 EMP25P12B I27149 08/07 EMP family part number identification EMP 25 P 12 B 1 2 3 4 5 1- Package type 2- Current rating 3- Current sensing configuration P= on 3 phases Q= on 2 phases E= on 3 emitters F= on 2 emitters G= on 1 emitter 4- Voltage code: Code x 100 = Vrrm 5- Circuit configuration code A= Bridge brake B= Inverter C= Inverter + brake D= BBI (Bridge Brake Inverter) M= Matrix www.irf.com 14 EMP25P12B I27149 08/07 EMP25P12B case outline and dimensions Data and specifications subject to change without notice This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR’s Web Site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 3252 7105 TAC Fax: (310) 252 7309 Visit us at www.irf.com for sales contact information 01/03 Data and specifications subject to change without notice. Sales Offices, Agents and Distributors in Major Cities Throughout the World. © 2003 International Rectifier - Printed in Italy 08-07 - Rev. 2.3 www.irf.com 15