2N5657 ® SILICON NPN TRANSISTOR � STMicroelectronics PREFERRED SALESTYPE � NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 1 2 3 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 375 V CBO E V Collector-Emitter Voltage (I = 0) 350 V CEO B V Emitter-Base Voltage (I = 0) 6 V EBO C I Collector Current 0.5 A C I Collector Peak Current 1 A CM I Base Current 0.25 A B o P Total Dissipation at T ≤ 25 C20 W tot c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/5 December 2000 2N5657 THERMAL DATA o R Thermal Resistance Junction-case Max 6.25 C/W thj-case o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = 375 V 0.01 mA CBO CE Current (I = 0) E I Collector Cut-off V = 350 V 0.1 mA CEV CE o Current (V = -1.5V) V = 250 V T = 100 C 1 mA BE CE c I Collector Cut-off V = 250 V 0.1 mA CEO CE Current (I = 0) B I Emitter Cut-off Current V = 6 V 0.01 mA EBO EB (I = 0) C V ∗ Collector-Emitter I = 1 mA 350 V (BR)CEO C Breakdown Voltage V ∗ Collector-Emitter I = 100 mA L = 50 mH 350 V CEO(sus) C Sustaining Voltage V ∗ Collector-Emitter I = 0.1 A I = 10 mA 1 V CE(sat) C B Saturation Voltage I = 0.25 A I = 25 mA 2.5 V C B I = 0.5 A I = 0.1 A 10 V C B V ∗ Base-Emitter Voltage I = 0.1 A V = 10 V 1 V BE C CE h ∗ DC Current Gain I = 50 mA V = 10 V 25 FE C CE IC = 0.1 A VCE = 10 V 30 250 I = 0.25 A V = 10 V 15 C CE I = 0.5 A V = 10 V 5 C CE h Small Signal Current I = 0.1 A V = 10 V f = 1KHz 20 fe C CE Gain f Transition frequency I = 50 mA V = 10 V f =10MHz 10 MHz T C CE C Collector Base V = 10 V f = 100KHz 25 pF CBO CB Capacitance ∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % Safe Operating Area Derating Curve 2/5 2N5657 DC Current Gain (NPN type) DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) 3/5 2N5657 SOT-32 (TO-126) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e 2.2 0.087 e3 4.15 4.65 0.163 0.183 F 3.8 0.150 G 3 3.2 0.118 0.126 H 2.54 0.100 H2 c1 0016114 4/5 2N5657 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5