STV9378 VERTICAL DEFLECTION BOOSTER ADVANCE DATA . POWER AMPLIFIER . FLYBACK GENERATOR . THERMAL PROTECTION . OUTPUT CURRENT UP TO 2.0APP . FLYBACK VOLTAGE UP TO 90V (on Pin 5) . INTERNAL REFERENCE VOLTAGE HEPTAWATT (Plastic Package) DESCRIPTION ORDER CODE : STV9378 Designed for monitors and high performance TVs, the STV9378 vertical deflection booster delivers flyback voltages up to 90V. The STV9378operateswith supplies upto 42V and provides up to 2App output current to drive the yoke. The STV9378 is offered in HEPTAWATT package. PIN CONNECTIONS 7 Non-inverting Input and Reference Voltage 6 Output Stage Supply 5 Output 4 GND 3 Flyback Generator 2 Supply Voltage 1 Inverting Input Tab connected to pin 4 July 1994 1/5 This is advance information on a new product now in development or undergoing evaluation. Detailsare subject to change without notice. 9378-01.EPS STV9378 BLOCK DIAGRAM OUTPUT STAGE SUPPLY FLYBACK SUPPLY VOLTAGE GENERATOR 23 6 FLYBACK GENERATOR REFERENCE VOLTAGE INVERTING INPUT 1 POWER 5 OUTPUT AMPLIFIER NON-INVERTING INPUT 7 OR REFERENCE VOLTAGE THERMAL PROTECTION STV9378 4 GROUND ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Supply Voltage (Pin 2) (see note 1) 50 V S V Flyback Peak Voltage (Pin 6) (see note 1) 100 V 6 V ,V Amplifier Input Voltage (Pins 1-7) (see note 1) - 0.3, + V V 1 7 S I Maximum Output Peak Current (see notes 2 and 3) 1.5 A O I Maximum Sink Current (first part of flyback) (t < 1ms) 1.5 A 3 I Maximum Source Current (t < 1ms) 1.5 A 3 o T Operating Ambient Temperature - 20, + 75 C oper o T Storage Temperature - 40, + 150 C stg o T Junction Temperature +150 C j Notes : 1. Versus GND. 2. The output current can reach 4A peak for t ≤ 10μs (up to 120Hz). 3. Provided SOAR is respected (see Figures 1 and 2). THERMAL DATA Symbol Parameter Value Unit o Rth (j-c) Junction-case Thermal Resistance Max. 3 C/W o T Temperature for Thermal Shutdown 150 C t o ΔT Hysteresis on Tt 10 C t o T Recommended Max. Junction Temperature 120 C jr 2/5 10kΩ 9378-02.TBL 9378-01.TBL 9378-02.EPS STV9378 ELECTRICAL CHARACTERISTICS o (V = 42V, T =25 C, unless otherwise specified) S A Symbol Parameter Test Conditions Min. Typ. Max. Unit V Operating Supply Voltage Range 10 42 V S I2 Pin 2 Quiescent Current I3=0,I5 = 0 10 20 mA I Pin 6 Quiescent Current I =0,I =0 5 10 30 mA 6 3 5 I Max. Peak Output Current 1 A O I Amplifier Bias Current V = 1V - 0.15 - 1 μ 1 1 A V Internal Reference Voltage 2.2 2.3 2.4 V 7 ΔV 7 Reference Voltage Drift versus VS VS = 24 to 42V 2 4 mV/V ΔV S o Kt Reference Voltage Drift versus T 100 150 ppm/ C j GV Voltage Gain 80 dB V Output Saturation Voltage to GND (Pin 4) I = 1A 1 1.5 V 5L 5 V Output Saturation Voltage to Supply (Pin 6) I = - 1A 1.6 2.1 V 5H 5 V Diode Forward Voltage between Pins 5-6 I = 1A 1.5 2 V D5 - 6 5 V Diode Forward Voltage between Pins 3-2 I = 1A 1.5 2 V D3 - 2 3 V Saturation Voltage on Pin 3 I = 20mA 0.8 1.2 V 3L 3 V Saturation Voltage to Pin 2 (2nd part of flyback) I = - 1A 2.1 2.9 V 3SH 3 APPLICATION CIRCUIT +V S C F 23 6 FLYBACK GENERATOR REFERENCE VOLTAGE R5 1 POWER 5 AMPLIFIER 7 THERMAL 10μF PROTECTION STV9378 4 R3 R4 C L R2 R1 3/5 10kΩ 1.5Ω 0.22μF 330Ω YOKE 9378-03.TBL 9378-03.EPS STV9378 Figure 1 : Output Transistors SOA Figure 2 : Secondary Breakdown Temperature (for secondary breakdown) Derating Curve (ISB = secondary breakdown current) I (A) ISB (%) C 100 10 @T =25°C case 90 1 80 -1 10 t = 1ms 70 t = 10ms V(V) t = 100ms CE T (°C) case -2 10 60 2 110 10 25 50 75 100 125 4/5 9378-04.EPS 9378-05.EPS STV9378 PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWAT L L1 L2 L5 L3 Dia. L7 L6 Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.6 08 0.024 0.031 F1 0.9 0.035 G 2.41 2.54 2.67 0.095 0.100 0.105 G1 4.91 5.08 5.21 0.193 0.200 0.205 G2 7.49 7.62 7.8 0.295 0.300 0.307 H2 10.4 0.409 H3 10.05 10.4 0.396 0.409 L 16.97 0.668 L1 14.92 0.587 L2 21.54 0.848 L3 22.62 0.891 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 M 2.8 0.110 M1 5.08 0.200 Dia. 3.65 3.85 0.144 0.152 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from itsuse. No licence is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved 2 Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips 2 2 I C Patent. Rights to use these components in a I C system, is granted provided that the system conforms to 2 the I C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 H3 A C D1 D F1 H2 E F G G1 MM1 G2 HEPTV.TBL PM-HEPTV.EPS