ON Semiconductor� Amplifier Transistor 2N5087 PNP Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V 50 Vdc CEO Collector–Base Voltage V 50 Vdc CBO Emitter–Base Voltage V 3.0 Vdc EBO 1 Collector Current — Continuous I 50 mAdc C 2 3 Total Device Dissipation @ T = 25°C P 625 mW A D Derate above 25°C 5.0 mW/°C CASE 29–11, STYLE 1 TO–92 (TO–226AA) Total Device Dissipation @ T = 25°C P 1.5 Watts C D Derate above 25°C 12 mW/°C Operating and Storage Junction T , T –55 to +150 °C J stg Temperature Range COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2 Thermal Resistance, Junction to Ambient R 200 °C/W �JA BASE Thermal Resistance, Junction to Case R 83.3 °C/W �JC 1 EMITTER ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (1) Collector–Emitter Breakdown Voltage V 50 — Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Collector–Base Breakdown Voltage V 50 — Vdc (BR)CBO (I = 100 μAdc, I = 0) C E Collector Cutoff Current I — 50 nAdc CBO (V = 35 Vdc, I = 0) CB E Emitter Cutoff Current I — 50 nAdc EBO (V = 3.0 Vdc, I = 0) EB C 1. Pulse Test: Pulse Width ≤ 300 �s, Duty Cycle ≤ 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 1 Publication Order Number: November, 2001 – Rev. 1 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued) A Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain h — FE (I = 100 μAdc, V = 5.0 Vdc) 250 800 C CE (I = 1.0 mAdc, V = 5.0 Vdc) 250 — C CE (1) (I = 10 mAdc, V = 5.0 Vdc) 250 — C CE Collector–Emitter Saturation Voltage V — 0.3 Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B Base–Emitter On Voltage V — 0.85 Vdc BE(on) (I = 1.0 mAdc, V = 5.0 Vdc) C CE SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product f 40 — MHz T (I = 500 μAdc, V = 5.0 Vdc, f = 20 MHz) C CE Collector–Base Capacitance C — 4.0 pF cb (V = 5.0 Vdc, I = 0, f = 1.0 MHz) CB E Small–Signal Current Gain h — fe (I = 1.0 mAdc, V = 5.0 Vdc, f = 1.0 kHz) 250 900 C CE Noise Figure NF dB (I = 20 μAdc, V = 5.0 Vdc, R = 1.0 kΩ, f = 1.0 kHz) — 2.0 C CE S (I = 100 μAdc, V = 5.0 Vdc, R = 3.0 kΩ, f = 1.0 kHz) — 2.0 C CE S 1. Pulse Test: Pulse Width ≤ 300 �s, Duty Cycle ≤ 2.0%. TYPICAL NOISE CHARACTERISTICS (V = –�5.0 Vdc, T = 25°C) CE A 10 1.0 BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz R ≈ 0 7.0 S 5.0 R ≈∞ S I = 1.0 mA I = 10 μA C 3.0 C 5.0 2.0 300 μA 30 μA 1.0 3.0 100 μA 0.7 100 μA 0.5 300 μA 1.0 mA 2.0 0.3 30 μA 0.2 10 μA 1.0 0.1 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current http://onsemi.com 2 e , NOISE VOLTAGE (nV) n I , NOISE CURRENT (pA) n 2N5087 NOISE FIGURE CONTOURS (V = –�5.0 Vdc, T = 25°C) CE A 1.0�M 1.0�M BANDWIDTH = 1.0 Hz 500�k 500�k BANDWIDTH = 1.0 Hz 200�k 200�k 100�k 100�k 50�k 50�k 20�k 20�k 0.5 dB 10�k 10�k 0.5 dB 5.0�k 5.0�k 1.0 dB 1.0 dB 2.0�k 2.0�k 2.0 dB 1.0�k 1.0�k 2.0 dB 500 500 3.0 dB 3.0 dB 200 200 5.0 dB 5.0 dB 100 100 10 20 30 50 70 100 200 300 500 700 1.0�k 10 20 30 50 70 100 200 300 500 700 1.0�k I , COLLECTOR CURRENT ( μA) I , COLLECTOR CURRENT ( μA) C C Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz 1.0�M 500�k 10 Hz to 15.7 kHz 200�k 100�k Noise Figure is Defined as: 50�k 2 2 1�2 2 e � 4KTR � I R n S n S 20�k � � NF� 20 log 10 4KTR S 10�k 0.5 dB e = Noise Voltage of the Transistor referred to the input. (Figure 3) n 5.0�k I = Noise Current of the Transistor referred to the input. (Figure 4) n 2.0�k 1.0 dB –23 K = Boltzman’s Constant (1.38 x 10 j/°K) 1.0�k T = Temperature of the Source Resistance (°K) 2.0 dB 500 R = Source Resistance (Ohms) S 3.0 dB 200 5.0 dB 100 20 30 50 70 100 200 300 500 700 1.0�k 10 I , COLLECTOR CURRENT ( μA) C Figure 5. Wideband http://onsemi.com 3 R , SOURCE RESISTANCE (OHMS) R , SOURCE RESISTANCE (OHMS) S S R , SOURCE RESISTANCE (OHMS) S 2N5087 TYPICAL STATIC CHARACTERISTICS 400 T = 125 °C J 25°C 200 -�55°C 100 80 60 V = 1.0 V CE V = 10 V CE 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I , COLLECTOR CURRENT (mA) C Figure 6. DC Current Gain 1.0 100 T = 25 °C I = 400 μA T = 25 °C A B A PULSE WIDTH = 300 μs 350 μA DUTY CYCLE ≤ 2.0% 0.8 80 300 μA 250 μA I = 1.0 mA 10 mA 50 mA 100 mA C 0.6 60 200 μA 150 μA 0.4 40 100 μA 0.2 20 50 μA 0 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40 I , BASE CURRENT (mA) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) B CE Figure 7. Collector Saturation Region Figure 8. Collector Characteristics 1.4 1.6 T = 25 °C J *APPLIES for I /I ≤ h /2 C B FE 1.2 0.8 1.0 25°C to 125 °C *� for V VC CE(sat) 0 0.8 -55°C to 25 °C V @ I /I = 10 BE(sat) C B 0.6 0.8 V @ V = 1.0 V BE(on) CE 25°C to 125 °C 0.4 1.6 � for V -55°C to 25 °C 0.2 VB BE V @ I /I = 10 CE(sat) C B 0 2.4 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 9. “On” Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 V, VOLTAGE (VOLTS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN CE FE θ , TEMPERATURE COEFFICIENTS (mV/ C) ° V I , COLLECTOR CURRENT (mA) C 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 1000 V = -�3.0 V V = 3.0 V CC CC 700 300 I /I = 10 I /I = 10 C B 500 C B 200 I = I T = 25 °C B1 B2 J t s 300 T = 25 °C J 200 100 70 50 100 70 30 50 t r 20 t f 30 t @ V = 0.5 V d BE(off) 10 20 7.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 -1.0 -�2.0 -�3.0 -�5.0 -�7.0 -10 -�20 -�30 -�50 -�70 -100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 11. Turn–On Time Figure 12. Turn–Off Time 500 10 T = 25 °C T = 25 °C J J 7.0 V = 20 V 300 CE C ib 5.0 5.0 V 200 3.0 100 2.0 C ob 70 50 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I , COLLECTOR CURRENT (mA) V , REVERSE VOLTAGE (VOLTS) C R Figure 13. Current–Gain — Bandwidth Product Figure 14. Capacitance 20 200 V = -10 Vdc V = 10 Vdc CE CE f = 1.0 kHz f = 1.0 kHz 10 100 T = 25 °C T = 25 °C A A 7.0 70 5.0 50 3.0 30 20 2.0 1.0 10 0.7 7.0 0.5 5.0 0.3 3.0 0.2 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5 h , INPUT IMPEDANCE (k Ω ) f�, CURRENT-GAIN � BANDWIDTH PRODUCT (MHz) t, TIME (ns) ie T h , OUTPUT ADMITTANCE ( mhos) � oe C, CAPACITANCE (pF) t, TIME (ns) 2N5087 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 FIGURE 19 DUTY CYCLE, D = t /t 1 2 0.07 0.05 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN P 0.05 (pk) READ TIME AT t (SEE AN–569) 1 0.02 Z = r(t) � R �JA(t) �JA T – T = P Z J(pk) A (pk) �JA(t) 0.03 t 1 0.01 0.02 SINGLE PULSE t 2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k 20�k 50�k 100�k t, TIME (ms) Figure 17. Thermal Response 400 The safe operating area curves indicate I –V limits of 10 μs C CE 1.0 ms the transistor that must be observed for reliable operation. 200 100 μs Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. 100 T = 25 °C C 1.0 s The data of Figure 18 is based upon T = 150°C; T or dc J(pk) C 60 T = 25 °C T is variable depending upon conditions. Pulse curves are A A 40 dc valid for duty cycles to 10% provided T ≤ 150°C. T J(pk) J(pk) may be calculated from the data in Figure 17. At high case 20 T = 150 °C J or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations 10 CURRENT LIMIT imposed by second breakdown. THERMAL LIMIT 6.0 SECOND BREAKDOWN LIMIT 4.0 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 40 2.0 4.0 6.0 8.0 10 20 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the Figure 18. Active–Region Safe Operating Area device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. 4 10 To find Z , multiply the value obtained from Figure θJA(t) V = 30 V CC 17 by the steady state value R . 3 θJA 10 Example: I CEO 2 The 2N5087 is dissipating 2.0 watts peak under the follow- 10 ing conditions: t = 1.0 ms, t = 5.0 ms (D = 0.2) 1 1 2 10 I CBO Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the AND I @ V = 3.0 V reading of r(t) is 0.22. 0 CEX BE(off) 10 The peak rise in junction temperature is therefore ΔT = r(t) x P x R = 0.22 x 2.0 x 200 = 88°C. -1 (pk) θJA 10 For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution -2 10 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 Center or on our website at www.onsemi.com. T , JUNCTION TEMPERATURE ( °C) J Figure 19. Typical Collector Leakage Current http://onsemi.com 6 I , COLLECTOR CURRENT (nA) I , COLLECTOR CURRENT (mA) r(t) TRANSIENT THERMAL RESISTANCE C C (NORMALIZED) 2N5087 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI B Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L INCHES MILLIMETERS SEATING PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 D G 0.045 0.055 1.15 1.39 XX H 0.095 0.105 2.42 2.66 G J 0.015 0.020 0.39 0.50 J H K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X–X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N STYLE 1: PIN 1. EMITTER 2. BASE 3. 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