TO-247 TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® Thunderbolt IGBT ® The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch ® Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E • Low Forward Voltage Drop • High Freq. Switching to 100KHz • Low Tail Current • Ultra Low Leakage Current C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified. C Symbol Parameter UNIT APT30GT60BRDQ2(G) V Collector-Emitter Voltage 600 CES Volts V Gate-Emitter Voltage ±30 GE I Continuous Collector Current @ T = 25°C 64 C1 C I Continuous Collector Current @ T = 110°C 30 Amps C2 C 1 I Pulsed Collector Current 110 CM Switching Safe Operating Area @ T = 150°C SSOA 110A @ 600V J P Total Power Dissipation Watts 250 D T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG °C T Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. L 300 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 250µA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 700µA, T = 25°C) GE(TH) 3 4 5 CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 30A, T = 25°C) 1.6 2.0 2.5 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 30A, T = 125°C) 2.8 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25°C) 50 CE GE j I µA CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125°C) 1000 CE GE j I Gate-Emitter Leakage Current (V = ±20V) nA GES ±100 GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 052-6282 Rev B 6-2008 DYNAMIC CHARACTERISTICS APT30GT60BRDQ2(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C 1600 Input Capacitance Capacitance ies C pF 150 Output Capacitance V = 0V, V = 25V oes GE CE C f = 1 MHz 92 Reverse Transfer Capacitance res V V Gate-to-Emitter Plateau Voltage Gate Charge GEP 3 Q V = 15V Total Gate Charge 7.5 g GE V = 300V Q nC Gate-Emitter Charge 145 CE ge I = 30A Q C Gate-Collector ("Miller") Charge 10 gc T = 150°C, R = 10Ω, V = 60 J G GE Switching Safe Operating Area SSOA A 15V, L = 100µH,V = 600V CE 110 t Inductive Switching (25°C) Turn-on Delay Time d(on) V = 400V t Current Rise Time 12 CC r ns t V = 15V Turn-off Delay Time d(off) GE 20 I = 30A t C Current Fall Time 225 f R = 10Ω 4 G E Turn-on Switching Energy 80 on1 T = +25°C 5 J E µJ Turn-on Switching Energy (Diode) 525 on2 6 E Turn-off Switching Energy 605 off t Inductive Switching (125°C) Turn-on Delay Time d(on) 600 t V = 400V Current Rise Time r CC 12 ns V = 15V t Turn-off Delay Time GE 20 d(off) I = 30A t C Current Fall Time f 245 R = 10Ω 4 4 G E Turn-on Switching Energy on1 100 T = +125°C 55 J E µJ Turn-on Switching Energy (Diode) 570 on2 6 E Turn-off Switching Energy 965 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .50 θJC °C/W R Junction to Case (DIODE) .67 θJC W Package Weight gm 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6282 Rev B 6-2008 TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 100 140 V = 15V GE 15 &13V 90 T = -55°C 120 J 80 11V 100 70 T = 25°C J 10V 60 80 50 T = 125°C 9V J 60 40 30 8V 40 20 7V 20 10 6V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 V , COLLECTER-TO-EMITTER VOLTAGE (V) V , COLLECTER-TO-EMITTER VOLTAGE (V) CE CE FIGURE 1, Output Characteristics(T = 25°C) FIGURE 2, Output Characteristics (T = 125°C) J J 100 16 250µs PULSE I = 30A C TEST<0.5 % DUTY T = 25°C 90 J CYCLE 14 T = -55°C J V = 120V 80 CE 12 70 V = 300V CE 10 60 8 50 V = 480V CE 40 6 30 4 T = 125°C J 20 T = 25°C J 2 10 0 0 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 V , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC) GE FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge 4.5 3.5 T = 25°C. J 250µs PULSE TEST 4.0 <0.5 % DUTY CYCLE I = 60A 3.0 C I = 60A C 3.5 2.5 3.0 I = 30A C 2.0 2.5 I = 30A C I = 15A C 2.0 1.5 1.5 I = 15A C 1.0 1.0 0.5 V = 15V. GE 0.5 250µs PULSE TEST <0.5 % DUTY CYCLE 0 0 6 8 10 12 14 16 0 25 50 75 100 125 150 V , GATE-TO-EMITTER VOLTAGE (V) T , Junction Temperature (°C) GE J FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature 1.15 90 1.10 80 1.05 70 1.00 60 0.95 50 0.90 40 0.85 30 0.80 20 0.75 10 0 0.70 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C) T , CASE TEMPERATURE (°C) J C FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature V , THRESHOLD VOLTAGE V , COLLECTOR-TO-EMITTER VOLTAGE (V) I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) GS(TH) CE C C (NORMALIZED) I DC COLLECTOR CURRENT(A) V , COLLECTOR-TO-EMITTER VOLTAGE (V) V , GATE-TO-EMITTER VOLTAGE (V) I , COLLECTOR CURRENT (A) C, CE GE C 052-6282 Rev B 6-2008 APT30GT60BRDQ2(G) 16 300 14 250 V = 15V GE 12 V =15V,T =125°C GE J 200 10 V =15V,T =25°C GE J 8 150 6 100 4 V = 400V CE 50 V = 400V T = 25°C, or 125°C CE J 2 R = 10Ω R = 10Ω G G L = 100µH L = 100µH 0 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 I , COLLECTOR TO EMITTER CURRENT (A) I , COLLECTOR TO EMITTER CURRENT (A) CE CE FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current 60 160 R = 10Ω, L = 100µH, V = 400V R = 10Ω, L = 100µH, V = 400V G CE G CE 140 50 T = 125°C, V = 15V J GE 120 40 100 30 80 60 20 40 T = 25 or 125°C,V = 15V J GE T = 25°C, V = 15V J GE 10 20 0 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 I , COLLECTOR TO EMITTER CURRENT (A) I , COLLECTOR TO EMITTER CURRENT (A) CE CE FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current 2000 3000 V = 400V V = 400V CE CE V = +15V V = +15V GE GE R = 10Ω R = 10Ω G G 2500 T = 125°C 1500 J T = 125°C J 2000 1000 1500 1000 T = 25°C J 500 500 T = 25°C J 0 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 I , COLLECTOR TO EMITTER CURRENT (A) I , COLLECTOR TO EMITTER CURRENT (A) CE CE FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current 4500 3000 V = 400V V = 400V CE E 60A CE V = +15V on2, V = +15V E 60A GE GE on2, T = 125°C R = 10Ω 4000 J G 2500 3500 2000 3000 1500 E 60A E 60A off, off, E 30A 1500 on2, 1000 E 30A E 30A on2, 1000 off, E 30A off, E 15A off, E 15A 500 off, 500 E 15A on2, E 15A on2, 0 0 0 10 20 30 40 50 0 25 50 75 100 125 R , GATE RESISTANCE (OHMS) T , JUNCTION TEMPERATURE (°C) G J FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature 052-6282 Rev B 6-2008 SWITCHING ENERGY LOSSES (µJ) E , TURN ON ENERGY LOSS (µJ) t RISE TIME (ns) t , TURN-ON DELAY TIME (ns) ON2 r, d(ON) SWITCHING ENERGY LOSSES (µJ) E , TURN OFF ENERGY LOSS (µJ) t FALL TIME (ns) t , TURN-OFF DELAY TIME (ns) OFF f, d (OFF) TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 3,000 120 C ies 100 1,000 500 80 60 C oes 100 C res 40 50 20 10 0 0 10 20 30 40 50 0 100 200 300 400 500 600 700 V , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V , COLLECTOR TO EMITTER VOLTAGE CE CE Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area 0.60 0.50 D = 0.9 0.40 0.7 0.30 0.5 Note: t 0.20 1 0.3 t 2 0.10 t 1 t Duty Factor D = / 0.1 2 SINGLE PULSE Peak T = P x Z + T 0.05 J DM θJC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 140 RC MODEL 50 Junction temp. (°C) 0.0838 0.00245 F = min (f , f ) max max2 max 0.05 10 f = max1 t + t + t + t Power d(on) r d(off) f 0.207 0.00548 (watts) 5 P - P diss cond f = T = 125°C max2 J E + E on2 off T = 75°C C D = 50 % T - T 0.209 0.165 J C V = 400V P = CE diss R R = 10Ω θJC G 1 Case temperature. (°C) 5 15 25 35 45 55 65 I , COLLECTOR CURRENT (A) C FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Figure 20, Operating Frequency vs Collector Current Z , THERMAL IMPEDANCE (°C/W) θJC C, CAPACITANCE ( F) P F , OPERATING FREQUENCY (kHz) MAX I , COLLECTOR CURRENT (A) C P DM 052-6282 Rev B 6-2008 APT30GT60BRDQ2(G) Gate Voltage 10% APT40DQ60 T = 125°C J t d(on) Collector Current 90% V V I CC C CE t r 5% 10% 5% Collector Voltage A Switching Energy D.U.T. Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% T = 125°C J t d(off) Gate Voltage t f 90% Collector Voltage 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 052-6282 Rev B 6-2008 TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified. C Symbol APT30GT60BRDQ2(G) Characteristic / Test Conditions UNIT I Maximum Average Forward Current (T = 111°C, Duty Cycle = 0.5) 40 F(AV) C I RMS Forward Current (Square wave, 50% duty) Amps 63 F(RMS) I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 320 FSM J STATIC ELECTRICAL CHARACTERISTICS Symbol UNIT Characteristic / Test Conditions MIN TYP MAX I = 30A 1.85 F Volts Forward Voltage I = 60A V 2.24 F F I = 30A, T = 125°C 1.48 F J DYNAMIC CHARACTERISTICS Characteristic Symbol Test Conditions MIN TYP MAX UNIT Reverse Recovery Time t I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C rr F F R J - 22 ns t Reverse Recovery Time rr - 25 I = 40A, di /dt = -200A/µs F F Q Reverse Recovery Charge nC rr - 35 V = 400V, T = 25°C R C I Maximum Reverse Recovery Current Amps - 3 - RRM t Reverse Recovery Time ns rr - 160 I = 40A, di /dt = -200A/µs F F Q Reverse Recovery Charge nC rr - 480 V = 400V, T = 125°C R C I Maximum Reverse Recovery Current Amps RRM - 6 - t Reverse Recovery Time ns rr - 85 I = 40A, di /dt = -1000A/µs F F Q Reverse Recovery Charge nC rr - 920 V = 400V, T = 125°C R C I Maximum Reverse Recovery Current Amps - 20 RRM 0.70 D = 0.9 0.60 0.50 0.7 0.40 0.5 Note: 0.30 t 1 0.3 0.20 t 2 t 1 t Duty Factor D = / 2 0.10 0.1 Peak T = P x Z + T SINGLE PULSE J DM θJC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) 0.289 0.00448 Power (watts) 0.381 0.120 Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL Z , THERMAL IMPEDANCE (°C/W) θ JC P DM 052-6282 Rev B 6-2008 APT30GT60BRDQ2(G) 120 180 T = 125°C J V = 400V R 160 80A 100 140 40A 80 120 20A 100 60 80 T = 125°C J 40 60 T = 175°C 40 J T = 25°C J 20 20 T = -55°C J 0 0 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 1200 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/µs) F F Figure 25. Forward Current vs. Forward Voltage Figure 26. Reverse Recovery Time vs. Current Rate of Change 1400 25 T = 125°C T = 125°C J J V = 400V V = 400V R R 80A 1200 20 80A 1000 15 800 40A 40A 600 10 400 20A 20A 5 200 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 -di /dt, CURRENT RATE OF CHANGE (A/µs) -di /dt, CURRENT RATE OF CHANGE (A/µs) F F Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change 1.4 80 Duty cycle = 0.5 T = 175°C J 70 1.2 Q rr t 60 rr 1.0 I RRM 50 0.8 40 0.6 t 30 rr 0.4 20 Q rr 0.2 10 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 29. Dynamic Parameters vs. Junction Temperature Figure 30. Maximum Average Forward Current vs. CaseTemperature 200 180 160 140 120 100 80 60 40 20 0 1 10 100 200 V , REVERSE VOLTAGE (V) R Figure 31. Junction Capacitance vs. Reverse Voltage 052-6282 Rev B 6-2008 C , JUNCTION CAPACITANCE K , DYNAMIC PARAMETERS Q , REVERSE RECOVERY CHARGE I , FORWARD CURRENT J f rr F (pF) (Normalized to 1000A/µs) (nC) (A) I (A) I , REVERSE RECOVERY CURRENT t , REVERSE RECOVERY TIME F(AV) RRM rr (A) (ns) TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) V r di /dt Adjust +18V F APT6017LLL 0V D.U.T. t Q 30µH / rr rr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 32. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current. RRM 5 0.25 I RRM 4 t - Reverse Recovery Time, measured from zero crossing where diode 3 rr current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Q - Area Under the Curve Defined by I and t . rr RRM rr Figure 33, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 15.49 (.610) 16.26 (.640) 1.49 (.059) 2.49 (.098) 5.38 (.212) 6.15 (.242) BSC 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 2.87 (.113) 4.50 (.177) Max. 3.12 (.123) 1.65 (.065) 0.40 (.016) 2.13 (.084) 19.81 (.780) 0.79 (.031) 20.32 (.800) Gate 1.01 (.040) 1.40 (.055) Collector (Cathode) Emitter (Anode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. Collector (Cathode) 052-6282 Rev B 6-2008