V I R DSS D25 DS(on) TM HiPerFET IXFH/IXFM 10 N100 1000 V 10 A 1.20 Ω Ω Ω Ω Ω Power MOSFETs IXFH/IXFM 12 N100 1000 V 12 A 1.05 Ω Ω Ω Ω Ω N-Channel Enhancement Mode TM t ≤ ≤ ≤ 250 ns High dv/dt, Low t , HDMOS Family ≤ ≤ rr rr Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) V T = 25°C to 150°C 1000 V DSS J V T = 25°C to 150°C; R = 1 MΩ 1000 V DGR J GS V Continuous ±20 V GS (TAB) V Transient ±30 V GSM I T = 25°C 10N100 10 A D25 C 12N100 12 A I T = 25°C, pulse width limited by T 10N100 40 A DM C JM TO-204 AA (IXFM) 12N100 48 A I T = 25°C 10N100 10 A AR C 12N100 12 A E T = 25°C30mJ AR C dv/dt I ≤ I , di/dt ≤ 100 A/µs, V ≤ V , 5 V/ns S DM DD DSS G T ≤ 150°C, R = 2 Ω J G D P T = 25°C 300 W D C G = Gate, D = Drain, S = Source, TAB = Drain T -55 ... +150 °C J T 150 °C JM T -55 ... +150 °C stg Features T 1.6 mm (0.062 in.) from case for 10 s 300 °C L z International standard packages z TM M Mounting torque 1.13/10 Nm/lb.in. Low R HDMOS process d DS (on) z Rugged polysilicon gate cell structure Weight TO-204 = 18 g, TO-247 = 6 g z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values z DC-DC converters (T = 25°C, unless otherwise specified) J z Synchronous rectification min. typ. max. z Battery chargers z Switched-mode and resonant-mode V V = 0 V, I = 3 mA 1000 V DSS GS D power supplies V V = V , I = 4 mA 2.0 4.5 V z GS(th) DS GS D DC choppers z AC motor control I V = ±20 V , V = 0 ±100 nA GSS GS DC DS z Temperature and lighting controls z Low voltage relays I V = 0.8 • V T =25°C 250 µA DSS DS DSS J V = 0 V T = 125°C1mA GS J Advantages z R V = 10 V, I = 0.5 • I 10N100 1.20 Ω Easy to mount with 1 screw (TO-247) DS(on) GS D D25 12N100 1.05 Ω (isolated mounting screw hole) z Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Space savings z High power density © 2004 IXYS All rights reserved DS91531F(01/04) IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100 Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25°C, unless otherwise specified) J min. typ. max. g V = 10 V; I = 0.5 • I , pulse test 6 10 S fs DS D D25 1 2 3 C 4000 pF iss C V = 0 V, V = 25 V, f = 1 MHz 310 pF oss GS DS C 70 pF rss t 21 50 ns d(on) t V = 10 V, V = 0.5 • V , I = 0.5 • I 33 50 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 2 Ω (External), 62 100 ns 3 - Source Tab - Drain d(off) G t 32 50 ns Dim. Millimeter Inches f Min. Max. Min. Max. Q 122 155 nC A 4.7 5.3 .185 .209 g(on) A 2.2 2.54 .087 .102 1 Q V = 10 V, V = 0.5 • V , I = 0.5 • I 30 45 nC gs GS DS DSS D D25 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 Q 50 80 nC gd b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 R 0.42 K/W thJC C .4 .8 .016 .031 R 0.25 K/W D 20.80 21.46 .819 .845 thCK E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values ∅P 3.55 3.65 .140 .144 (T = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252 J Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I V = 0 V 10N100 10 A S GS 12N100 12 A 13N100 12.5 A TO-204 AA (IXFM) Outline I Repetitive; 10N100 40 A SM pulse width limited by T 12N100 48 A JM 13N100 50 A V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t T =25°C 250 ns rr I = I J F S T = 125°C 400 ns -di/dt = 100 A/µs, J V = 100 V R Q T =25°C1 µC RM J Pins 1 - Gate 2 - Source T = 125°C2 µC J Case - Drain Dim. Millimeter Inches I T =25°C10 A RM J Min. Max. Min. Max. T = 125°C15 A J A 6.4 11.4 .250 .450 A1 3.42 .135 ∅b .97 1.09 .038 .043 ∅D 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 L 7.93 .312 ∅p 3.84 4.19 .151 .165 ∅p1 3.84 4.19 .151 .165 q 30.15 BSC 1.187 BSC R 13.33 .525 R1 4.77 .188 s 16.64 17.14 .655 .675 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100 Fig. 1 Output Characteristics Fig. 2 Input Admittance 20 20 T = 25°C V = 10V J GS 18 18 7V 16 16 6V 14 14 12 12 T = 25°C J 10 10 8 8 6 6 5V 4 4 2 2 0 0 0 5 10 15 20 0 123 456 789 10 V - Volts V - Volts DS GS Fig. 3 R vs. Drain Current Fig. 4 Temperature Dependence DS(on) of Drain to Source Resistance 1.5 2.50 T = 25°C J 2.25 1.4 2.00 1.3 1.75 1.2 1.50 V = 10V I = 6A GS D V = 15V 1.25 GS 1.1 1.00 1.0 0.75 0.9 0.50 0 5 10 15 20 25 -50 -25 0 25 50 75 100 125 150 I - Amperes T - Degrees C D J Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of Case Temperature Breakdown and Threshold Voltage 20 1.2 V GS(th) BV DSS 18 1.1 16 1.0 14 12N100 12 0.9 10 10N100 0.8 8 6 0.7 4 0.6 2 0 0.5 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T - Degrees C T - Degrees C C J © 2004 IXYS All rights reserved R - Normalized I - Amperes DS(on) I - Amperes D D R - Normalized DS(on) BV/V - Normalized I - Amperes G(th) D IXFH 10N100 IXFH 12N100 IXFM 10N100 IXFM 12N100 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 10µs V = 500V DS 9 I = 6A D 8 I = 10mA G Limited by R 10 100µs DS(on) 7 6 1ms 5 4 1 10ms 3 100ms 2 1 0 0.1 0 25 50 75 100 125 150 1 10 100 1000 Gate Charge - nCoulombs V - Volts DS Fig.8 Capacitance Curves Fig.9 Source Current vs. Source to Drain Voltage 4500 20 C iss 18 4000 16 3500 14 3000 12 f = 1MHz 2500 V = 25V DS 10 T = 125°C 2000 J 8 1500 6 T = 25°C J 1000 4 C oss 500 2 C rss 0 0 0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V - Volts V - Volts DS SD Fig.10 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 of the following U.S. patents: 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 Thermal Response - K/W Capacitance - pF V - Volts GS I - Amperes I - Amperes D D