TM IXGR 32N60CD1 V = 600 V HiPerFAST IGBT CES I = 45 A with Diode C25 TM V = 2.7 V CE(SAT) ISOPLUS247 t = 55 ns fi(typ) (Electrically Isolated Backside) Preliminary data sheet TM Symbol Test Conditions Maximum Ratings ISOPLUS 247 (IXGR) E 153432 V T = 25°C to 150°C 600 V CES J V T = 25°C to 150°C; R = 1 MΩ 600 V CGR J GE V Continuous ±20 V GES V Transient ±30 V GEM G C I T = 25°C45A E C25 C Isolated backside* I T = 90°C28A C90 C I T = 25°C, 1 ms 120 A CM C SSOA V = 15 V, T = 125°C, R = 10 Ω I = 64 A G = Gate, C = Collector, GE VJ G CM (RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V E = Emitter, TAB = Collector CES P T = 25°C 140 W C C T -55 ... +150 °C * Patent pending J T 150 °C JM Features T -55 ... +150 °C stg z Maximum Lead and Tab temperature for soldering 300 °C DCB Isolated mounting tab 1.6 mm (0.062 in.) from case for 10 s z Meets TO-247AD package Outline z V 50/60 Hz, RMS t = 1 min leads-to housing 2500 V~ High current handling capability ISOL z TM Latest generation HDMOS process z Weight 5g MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions Characteristic Values Uninterruptible power supplies (UPS) z (T = 25°C, unless otherwise specified) Switched-mode and resonant-mode J min. typ. max. power supplies z AC motor speed control V I = 250 µA, V = V 2.5 5.0 V z GE(th) C CE GE DC servo and robot drives z DC choppers I V = 600V T = 25°C 200 µA CES CE J V = 0 V T = 125°C3mA GE J Advantages I V = 0 V, V = ±20 V ±100 nA GES CE GE z Easy assembly V I = I V = 15 V 2.3 2.7 V z CE(sat) C T, GE High power density Note 1 z Very fast switching speeds for high frequency applications DS98631D(06/04) © 2004 IXYS All rights reserved IXGR 32N60CD1 Symbol Test Conditions Characteristic Values ISOPLUS 247 OUTLINE (T = 25°C, unless otherwise specified) J min. typ. max. g I = I ; V = 10 V, 25 S fs C T CE Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % C 2700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 240 pF oes CE GE C 50 pF res Q 110 nC g Q I = I , V = 15 V, V = 0.5 V 22 nC ge C T GE CE CES Q 40 nC gc Inductive load, T = 25° ° ° ° °C t 25 ns J d(on) I = I , V = 15 V, L = 100 µH, t 20 ns C T GE ri V = 0.8 V , R = R = 4.7 Ω CE CES G off t 85 170 ns 1 Gate, 2 Drain (Collector) d(off) Remarks: Switching times may 3 Source (Emitter) t 55 ns fi 4 no connection increase for V (Clamp) > 0.8 • V , CE CES E 0.32 0.75 mJ higher T or increased R off J G Dim. Millimeter Inches t 25 ns Min. Max. Min. Max. d(on) Inductive load, T = 125° ° ° ° °C J A 4.83 5.21 .190 .205 t 25 ns ri I = I , V = 15 V, L = 100 µH A 2.29 2.54 .090 .100 C T GE 1 A 1.91 2.16 .075 .085 E 1mJ 2 on V = 0.8 V , R = R = 4.7 Ω CE CES G off b 1.14 1.40 .045 .055 t 110 ns d(off) b 1.91 2.13 .075 .084 Remarks: Switching times may 1 b 2.92 3.12 .115 .123 t 100 ns 2 increase for V (Clamp) > 0.8 • V , fi CE CES C 0.61 0.80 .024 .031 higher T or increased R J G D 20.80 21.34 .819 .840 E 0.85 mJ off E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC R 0.90 K/W thJC L 19.81 20.32 .780 .800 R 0.15 K/W thCK L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190 Reverse Diode (FRED) Characteristic Values (T = 25°C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, Pulse test T = 150°C 1.6 V F F T GE J t ≤ 300 µs, duty cycle d ≤ 2 % T = 25°C 2.5 V J I I = I , V = 0 V, -di /dt = 100 A/µs6 A RM F T GE F t V = 100 V T = 100°C 100 ns rr R J I = 1 A; -di/dt = 100 A/µs; V = 30 V T = 25°C25 ns F R J R 1.15 K/W thJC Note: 1. I = 32A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 IXGR 32N60CD1 200 100 T = 25°C V = 15V J GE T = 25°C J 9V 11V V = 15V 13V GE 13V 11V 160 80 120 60 9V 80 40 7V 7V 40 20 5V 5V 0 0 024 68 10 01 2345 V - Volts V - Volts CE CE Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 100 1.50 11V T = 125°C V = 15V J GE V = 15V 9V GE 13V I = 64A 80 C 1.25 60 I = 32A C 1.00 7V 40 I = 16A C 0.75 20 5V 0 0.50 0 1 2345 25 50 75 100 125 150 V - Volts CE T - Degrees C J Fig. 4. Temperature Dependence of V Fig. 3. High Temperature Output Characteristics CE(sat) 100 10000 V = 10V CE f = 1Mhz C iss 80 1000 60 C oss 40 C 100 rss T = 125°C J 20 T = 25°C J 0 10 3456789 10 0 5 10 15 20 25 30 35 40 V -Volts V - Volts CE GE Fig. 5. Admittance Curves Fig. 6. Capacitance Curves © 2004 IXYS All rights reserved I - Amperes I - Amperes I - Amperes C C C Capacitance - pF V - Normalized CE (sat) I - Amperes C E - millijoules (OFF) E - milliJoules (OFF) IXGR 32N60CD1 4 8 1.00 4 T = 125°C T = 125°C J J E (OFF) R = 10Ω G I = 64A C 3 6 0.75 3 E (ON) E E (OFF) (ON) 2 4 0.50 2 E (ON) E I = 32A (OFF) C 1 2 0.25 1 I = 16A E C (ON) E (OFF) 0 0 0.00 0 0 10203040 5060 0 20 406080 R - Ohms I - Amperes G C Fig. 7. Dependence of E and E on I . Fig. 8. Dependence of E and E on R . ON OFF C ON OFF G 16 100 64 I = 32A C V = 300V CE 12 T = 125°C J 10 R = 4.7Ω G dV/dt < 5V/ns 8 1 4 0 0.1 0 25 50 75 100 125 0 100 200 300 400 500 600 Q - nanocoulombs V - Volts g CE Fig. 10. Turn-off Safe Operating Area Fig. 9. Gate Charge 1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 11. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. Z (K/W) thJC E - millijoules (ON) V - Volts GE I - Amperes C E - millijoules (ON) IXGR 32N60CD1 60 1000 30 T = 100°C T = 100°C A VJ VJ A nC V = 300V V = 300V R R 50 25 800 I = 60A I = 60A I F Q F RM r I = 30A I I = 30A F F F 40 20 I = 15A I = 15A F F 600 T =150°C VJ 30 15 T =100°C VJ 400 20 10 T =25°C VJ 200 10 5 0 0 0 0123 V 100 1000 0 200 400 600 A/ 800µs 1000 A/µs V -di /dt -di /dt F F F Fig. 12. Forward current I versus V Fig. 13. Reverse recovery charge Q Fig. 14. Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2.0 90 20 1.00 T = 100°C T = 100°C VJ VJ I = 30A V = 300V F R V µs ns V t V FR fr FR t 1.5 15 0.75 rr t K fr f 80 I = 60A F I = 30A 1.0 F 10 0.50 I = 15A F I RM 70 0.5 5 0.25 Q r 0.0 60 0 0.00 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 A/ 800µs 1000 °C A/µs di /dt T -di /dt F VJ F Fig. 17. Peak forward voltage V and t Fig. 15. Dynamic parameters Q , I Fig. 16. Recovery time t versus -di /dt FR fr r RM rr F versus di /dt versus T F VJ 10 Constants for Z calculation: thJC K/W iR (K/W) t (s) thi i 1 1 0.436 0.0055 Z thJC 2 0.482 0.0092 0.1 3 0.117 0.0007 4 0.115 0.0418 0.01 0.001 DSEP 2x31-06B 0.0001 s 0.00001 0.0001 0.001 0.01 0.1 1 t Fig. 18. Transient thermal resistance junction to case © 2004 IXYS All rights reserved