IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features General Description • Built using the advantages and compatibility The IXDI414/IXDN414 are high speed high current gate drivers TM of CMOS and IXYS HDMOS processes specifically designed to drive the largest MOSFETs and IGBTs • Latch-Up Protected Over Entire to their minimum switching time and maximum practical Operating Range frequency limits. The IXDI/N414 can source and sink 14A of • High Peak Output Current: 14A Peak peak current, while producing voltage rise and fall times of less • Wide Operating Range: 4.5V to 35V than 30ns, to drive the latest IXYS MOSFETs & IGBTs. The o o • -55 C to 125 C Extended Operating Temperature input of the driver is compatible with TTL or CMOS and is fully Standard immune to latch up over the entire operating range. Designed • High Capacitive Load with small internal delays, a patent-pending circuit virtually Drive Capability: 15nF in <30ns eliminates transistor cross conduction and current shoot- • Matched Rise And Fall Times through. Improved speed and drive capabilities are further • Low Propagation Delay Time enhanced by very low, matched rise and fall times. • Low Output Impedance The IXDN414 is configured as a non-inverting gate driver and • Low Supply Current the IXDI414 is an inverting gate driver. Applications The IXDN414/IXDI414 family are available in standard 8 pin • Driving MOSFETs and IGBTs P-DIP (PI), 5-pin TO-220 (CI), TO-263 (YI) and thermally • Motor Controls enhanced 14-pin SOIC (SI) surface-mount packages. • Line Drivers • Pulse Generators • Local Power ON/OFF Switch • Switch Mode Power Supplies (SMPS) • DC to DC Converters Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram Vcc Vcc P ANTI-CROSS IN CONDUCTION OUT CIRCUIT * N GND GND * Patent Pending DS99020B(08/04) Copyright © IXYS CORPORATION 2004 First Release (1) (1) IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram Vcc Vcc P ANTI-CROSS OUT IN CONDUCTION CIRCUIT * N GND GND Pin Description And Configuration SYMBOL FUNCTION DESCRIPTION Positive power-supply voltage input. This pin provides power to the VCC Supply Voltage entire chip. The range for this voltage is from 4.5V to 35V. IN Input Input signal-TTL or CMOS compatible. Driver Output. For application purposes, this pin is connected via an OUT Output external resistor to a Gate of a MOSFET/IGBT. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be GND Ground connected to a low noise analog ground plane for optimum performance. 1 NC 14 NC I 1 VCC I VCC 8 2 NC NC 13 X X D D 3 VCC VCC 12 2 IN OUT 7 (1) (1) 4 4 OUT 11 IN 4 3 NC OUT 6 1 1 OUT 10 5 NC 4 4 S 6 GND 9 GND 4 GND P GND 5 TO220 (CI) I I NC TO263 (YI) 7 NC 8 8 PIN DIP (PI) 14 PIN SOIC ORDERING INFORMATION Part Number Package Type Temp. Range Configuration IXDN414PI 8-Pin PDIP -55°C to 125°C IXDN414SI 14-Pin SOIC IXDN414CI 5-Pin TO-220 Non Inverting -55°C to 125°C IXDN414YI 5-Pin TO-263 -55°C to 125°C IXDI414PI 8-Pin PDIP -55°C to 125°C IXDI414SI 14-Pin SOIC IXDI414CI 5-Pin TO-220 Inverting -55°C to 125°C IXDI414YI 5-Pin TO-263 -55°C to 125°C NOTES 1: Either "I" or "N"; 2: Mounting or solder tabs on all packages are connected to ground * Patent Pending 2 IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Absolute Maximum Ratings (Note 1) Operating Ratings Parameter Value Parameter Value o Supply Voltage 40V Maximum Junction Temperature 150 C o o -0.3V to Operating Temperature Range -55 C to 125 C All Other Pins V + 0.3V CC Thermal Resistance (Junction To Case) Power Dissipation TO220 (CI) o 12.5W TO263 (YI), 14 Pin SOIC (SI) 10 K/W T 25 C: TO220 (CI), TO263 (YI)* ≤ CASE o Thermal Resistance (Junction to Ambient) Power Dissipation, T ≤25 C AMBIENT 8 Pin PDIP (PI), 14 Pin SOIC 833mW 8-Pin PDIP (PI) 150 K/W TO220 (CI) TO263 (YI) 2W 14-Pin SOIC 120 K/W o o Storage Temperature -55 C to 150 C TO-220 (CI), TO-263 (YI) 62.5 K/W Soldering Lead Temperature (10s) o 300 C Tab Temperature (10s) o * Subject to internal lead current limit I 260 C DC Electrical Characteristics o Unless otherwise noted, T = 25 C, 4.5V ≤ V ≤ 35V . A CC All voltage measurements with respect to GND. Device configured as described in Test Conditions. Symbol Parameter Test Conditions Min Typ Max Units V High input voltage 3.5 V IH 4.5V ≤ V ≤ 18V CC V Low input voltage 0.8 V IL 4.5V ≤ V ≤ 18V CC V Input voltage range -5 V + 0.3 V IN CC I Input current -10 10 IN 0V ≤ V ≤ V µA IN CC V High output voltage V - 0.025 V OH CC V Low output voltage 0.025 V OL R Output resistance I = 10mA, V = 18V 600 1000 OH OUT CC mΩ @ Output high R Output resistance I = 10mA, V = 18V 600 1000 OL OUT CC mΩ @ Output Low I Peak output current V is 18V 14 A PEAK CC I Continuous output 8 Pin Dip (PI) (Limited by pkg power dissipation) 3 A DC current TO220 (CI), TO263 (YI) 4 A (1) t Rise time C =15nF Vcc=18V 22 27 ns R L (1) t Fall time C =15nF Vcc=18V 20 25 ns F L t On-time propagation C =15nF Vcc=18V 30 33 ns ONDLY L (1) delay t Off-time propagation C =15nF Vcc=18V 31 34 ns OFFDLY L (1) delay V Power supply voltage 4.5 18 35 V CC I Power supply current V = 3.5V 1 3 mA CC IN V = 0V 0 10 IN µA V = + V 10 IN CC µA (1) See Figures 3a and 3b Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Specifications subject to change without notice 3 IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Figure 3a - Characteristics Test Diagram 5.0V Vcc 10uF 0V 0V 25V IXDI414 Vcc 0V IXDN414 15nF Agilent 1147A Current Probe Figure 3b - Timing Diagrams Non-Inverting (IXDN414) Timing Diagram 5V 90% INPUT2.5V 10% 0V PWMIN tONDLY tR tOFFDLY tF Vcc 90% OUTPUT 10% 0V Inverting (IXDI414) Timing Diagram 5V 90% INPUT 2.5V 10% 0V PWMIN tONDLY tOFFDLY tF tR VCC 90% OUTPUT 10% 0V 4 IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Typical Performance Characteristics Fig. 4 Rise Time vs. Supply Voltage Fig. 5 Fall Time vs. Supply Voltage 40 40 30 30 CL=15,000 pF CL=15,000 pF 20 20 7,500 pF 7,500 pF 10 10 3,600 pF 3,600 pF 0 0 8 1012 141618 8 101214 1618 Supply Voltage (V) Supply Voltage (V) Rise And Fall Times vs. Case Temperature Fig. 6 C = 15 nF, V = 18V Fig. 7 Rise Time vs. Load Capacitance L cc 40 50 35 8V 40 10V 30 t R 12V 25 30 18V t F 20 14V 16V 20 15 10 10 5 0 0 0k 5k 10k 15k 20k -40 -20 0 20406080 100 120 Load Capacitance (pF) Temperature (°C) Fig. 9 Max / Min Input vs. Case Temperature Fig. 8 Fall Time vs. Load Capacitance V =18V C =15nF CC L 3.2 40 3.0 8V 12V 14V Minimum Input High 2.8 10V 30 2.6 16V18V 2.4 20 2.2 Maximum Input Low 2.0 10 1.8 1.6 -60 -40 -20 0 20 40 60 80 100 0 0k 5k 10k 15k 20k o Temperature ( C) Load Capacitance (pF) 5 Fall Time (ns) Time (ns) Rise Time (ns) Max / Min Input (V) Rise Time (ns) Fall Time (ns) IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Supply Current vs. Load Capacitance Fig. 12 Fig. 11 Supply Current vs. Frequency Vcc=18V Vcc=18V 1000 1000 CL= 30 nF 15 nF 100 2 MHz 100 1 MHz 5000 pF 10 500 kHz 2000 pF 10 100 kHz 1 50 kHz 1 0.1 10 100 1000 10000 1k 10k 100k Load Capacitance (pF) Frequency (kHz) Fig. 13 Supply Current vs. Load Capacitance Fig. 14 Supply Current vs. Frequency Vcc=12V Vcc=12V 1000 1000 CL = 30 nF 100 15 nF 100 2 MHz 5000 pF 1 MHz 10 2000 pF 500 kHz 10 1 100 kHz 50 kHz 1 0.1 10 100 1000 10000 1k 10k 100k Frequency (kHz) Load Capacitance (pF) Fig. 15 Supply Current vs. Load Capacitance Fig. 16 Supply Current vs. Frequency Vcc=8V Vcc=8V 1000 1000 CL= 30 nF 100 100 15 nF 2 MHz 10 5000 pF 1 MHz 2000 pF 10 500 kHz 1 100 kHz 1 50 kHz 0.1 10 100 1000 10000 1k 10k 100k Frequency (kHz) Load Capacitance (pF) 6 Supply Current (mA) Supply Current (mA) Supply Current (mA) Supply Current (mA) Supply Current (mA) Supply Current (mA) IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Propagation Delay vs. Input Voltage Fig. 17 Propagation Delay vs. Supply Voltage Fig. 18 C =15nF V =15V C =15nF V =5V@1kHz L CC L IN 50 50 t OFFDLY 40 40 t t ONDLY ONDLY 30 30 t OFFDLY 20 20 10 10 0 0 2468 10 12 8 1012141618 Supply Voltage (V) Input Voltage (V) Propagation Delay vs. Case Temperature Fig. 19 Quiescent Supply Current vs. Case Temperature Fig. 20 C = 2500pF, V = 18V V =18V V =5V@1kHz L CC CC IN 0.60 50 45 0.58 t ONDLY 40 35 0.56 t OFFDLY 30 0.54 25 20 0.52 15 0.50 10 -40 -20 0 20406080 -40 -20 0 2040 6080 100 120 o Temperature ( C) Temperature (°C) Fig. 21 P Channel Output Current vs. Case Temperature N Channel Output Current vs. Case Temperature Fig. 22 V =18V C =.1uF CC L V =18V C =.1uF CC L 16 17 15 16 14 15 13 12 14 -40 -20 0 20406080 100 -40 -20 0 2040 6080 100 o Temperature ( C) o Temperature ( C) 7 P Channel Output Current (A) Time (ns) Propagation Delay (ns) N Channel Output Current (A) Quiescent Supply Current (mA) Propagation Delay (ns) IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Fig. 24 High State Output Resistance Enable Threshold vs. Supply Voltage Fig. 23 vs. Supply Voltage 14 1.0 12 0.8 10 0.6 8 6 0.4 4 0.2 2 0.0 0 10 15 20 25 8 8 101214161820222426 Supply Voltage (V) Supply Voltage (V) Low-State Output Resistance Fig. 25 Fig. 26 V vs. P Channel Output Current CC vs. Supply Voltage C =.1uF V =0-5V@1kHz L IN 1.0 0 -2 -4 0.8 -6 -8 0.6 -10 -12 -14 0.4 -16 -18 0.2 -20 -22 -24 0.0 8 10 15 20 25 8 10 15 20 25 Supply Voltage (V) Vcc Fig. 27 Vcc vs. N Channel Output Current C =.1uF V =0-5V@1kHz L IN 24 22 20 18 16 14 12 10 8 6 4 2 0 8 10 15 20 25 Vcc 8 Enable Threshold (V) Low-State Output Resistance (Ohms) N Channel Output Current (A) P Channel Output Current (A) High State Output Resistance (Ohm) IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Supply Bypassing, Grounding Practices and Output Lead inductance When designing a circuit to drive a high speed GROUNDING MOSFET utilizing the IXDN414/IXDI414, it is very In order for the design to turn the load off properly, important to observe certain design criteria in the IXDN414 must be able to drain this 5A of order to optimize performance of the driver. current into an adequate grounding system. There Particular attention needs to be paid to Supply are three paths for returning current that need to Bypassing, Grounding, and minimizing the be considered: Path #1 is between the IXDN414 Output Lead Inductance. and its load. Path #2 is between the IXDN414 and its power supply. Path #3 is between the IXDN414 Say, for example, we are using the IXDN414 to and whatever logic is driving it. All three of these charge a 5000pF capacitive load from 0 to 25 paths should be as low in resistance and volts in 25ns. inductance as possible, and thus as short as practical. In addition, every effort should be made Using the formula: I= ∆V C / ∆t, where ∆V=25V to keep these three ground paths distinctly C=5000pF & ∆t=25ns we can determine that to separate. Otherwise, the returning ground current charge 5000pF to 25 volts in 25ns will take a from the load may develop a voltage that would constant current of 5A. (In reality, the charging have a detrimental effect on the logic line driving current won’t be constant, and will peak the IXDN414. somewhere around 8A). OUTPUT LEAD INDUCTANCE SUPPLY BYPASSING Of equal importance to Supply Bypassing and In order for our design to turn the load on properly, Grounding are issues related to the Output Lead the IXDN414 must be able to draw this 5A of Inductance. Every effort should be made to keep current from the power supply in the 25ns. This the leads between the driver and it’s load as short means that there must be very low impedance and wide as possible. If the driver must be placed between the driver and the power supply. The farther than 2” (5mm) from the load, then the output most common method of achieving this low leads should be treated as transmission lines. In impedance is to bypass the power supply at the this case, a twisted-pair should be considered, driver with a capacitance value that is a magnitude and the return line of each twisted pair should be larger than the load capacitance. Usually, this placed as close as possible to the ground pin of would be achieved by placing two different types the driver, and connected directly to the ground of bypassing capacitors, with complementary terminal of the load. impedance curves, very close to the driver itself. (These capacitors should be carefully selected, low inductance, low resistance, high-pulse current- service capacitors). Lead lengths may radiate at high frequency due to inductance, so care should be taken to keep the lengths of the leads between these bypass capacitors and the IXDN414 to an absolute minimum. 9 IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 8-PIN DIP Case Outline (IXD_414PI) 14-PIN SOIC Case Outline (IXD_414SI) 5-Leaded TO-220 Case Outline (IXD_414CI) 5-Leaded TO-263 Case Outline (IXD_414YI) IXYS Corporation IXYS Semiconductor GmbH 3540 Bassett St; Santa Clara, CA 95054 Edisonstrasse15 ; D-68623; Lampertheim Tel: 408-982-0700; Fax: 408-496-0670 Tel: +49-6206-503-0; Fax: +49-6206-503627 e-mail: sales@ixys.net e-mail: marcom@ixys.de www.ixys.com 10