IXYS IXBH40N160

Description
BIMOSFET 1600V 33A TO-247AD
Part Number
IXBH40N160
Price
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Manufacturer
IXYS
Lead Time
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Category
PRODUCTS - I
Datasheet
Extracted Text
TM High Voltage BIMOSFET IXBH 40N140 V = 1400/1600 V CES Monolithic Bipolar IXBH 40N160 I = 33 A C25 MOS Transistor V = 6.2 V typ. CE(sat) N-Channel, Enhancement Mode t = 40 ns fi C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 40N140 40N160 • International standard package V T = 25�C to 150�C 1400 1600 V JEDEC TO-247 AD CES J TM High Voltage BIMOSFET V T = 25�C to 150�C; R = 1 M� 1400 1600 V CGR J GE - replaces high voltage Darlingtons V Continuous �20 V and series connected MOSFETs GES - lower effective R DS(on) V Transient �30 V GEM Monolithic construction I T = 25�C, 33 A - high blocking voltage capability C25 C - very fast turn-off characteristics I T = 90�C20A C90 C MOS Gate turn-on I T = 25�C, 1 ms 40 A CM C - drive simplicity Intrinsic diode SSOA V = 15 V, T = 125�C, R = 22 � V = 0.8V I = 40 A GE VJ G CE CES CM (RBSOA) Clamped inductive load, L = 100 �H Applications P T = 25�C 350 W C C AC motor speed control T -55 ... +150 �C J DC servo and robot drives T 150 �CDC choppers JM Uninterruptible power supplies (UPS) T -55 ... +150 �C stg Switched-mode and resonant-mode T 1.6 mm (0.063 in) from case for 10 s 300 �C L power supplies CRT deflection M Mounting torque 1.15/10 Nm/lb.in. d Lamp ballasts Weight 6g Advantages Symbol Conditions Characteristic ValuesEasy to mount with 1 screw (T = 25�C, unless otherwise specified) (isolated mounting screw hole) J min. typ. max. Space savings High power density BV I = 1 mA, V = 0 V 40N140 1400 V CES C GE 40N160 1600 V V I = 2 mA, V = V 48V GE(th) C CE GE I V = 0.8 V T =25�C 400 �A CES CE CES J V = 0 V T = 125�C3mA GE J I V = 0 V, V = �20 V ��500 nA GES CE GE V I = I , V = 15 V 6.2 7.1 V CE(sat) C C90 GE T = 125�C7.8V J IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1 - 4 031 IXBH 40N140 IXBH 40N160 Symbol Conditions Characteristic Values TO-247 AD Outline (T = 25�C, unless otherwise specified) J min. typ. max. C 3300 pF ies C V = 25 V, V = 0 V, f = 1 MHz 220 pF oes CE GE C 30 pF res Q I = 20 A, V = 600 V, V = 15 V 130 nC g C CE GE t 200 ns d(on) Inductive load, T = 125�C J t 60 ns ri I = I , V = 15 V, L = 100 �H, C C90 GE t 270 ns d(off) V = 960 V, R = 22 � CE G t 40 ns fi Dim. Millimeter Inches R 0.35 K/W thJC Min. Max. Min. Max. R 0.25 K/W thCK A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 Reverse Conduction Characteristic Values (T = 25�C, unless otherwise specified) G 1.65 2.13 0.065 0.084 J H - 4.5 - 0.177 J 1.0 1.4 0.040 0.055 Symbol Conditions min. typ. max. K 10.8 11.0 0.426 0.433 V I = I , V = 0 V, Pulse test, 2.5 5 V F F C90 GE L 4.7 5.3 0.185 0.209 t ��300 �s, duty cycle d�� 2 % M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 © 2000 IXYS All rights reserved 2 - 4 IXBH 40N140 IXBH 40N160 70 70 V = 17V V = 17V T = 25°C GE T = 125°C GE J J 60 60 15V 15V 50 50 13V 13V 40 40 30 30 20 20 10 10 0 0 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12141618 V - Volts V - Volts CE CE Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics 70 70 V = 20V CE 60 60 50 50 40 40 T = 125°C T = 25°C J J 30 30 T = 125°C T = 25°C J J 20 20 10 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 56 78 9 10 11 12 13 V - Volts V - Volts GE F Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 16 100 V = 600V CE 14 I = 20A C 12 10 10 T = 125°C J 8 V < V CEK CES 6 IXBH 40N140 1 IXBH 40N160 4 2 0 0.1 0 20406080 100 120 140 0 400 800 1200 1600 Q - nanocoulombs V - Volts G CE Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Based Safe Operating Area RBSOA © 2000 IXYS All rights reserved 3 - 4 I - Amperes I - Amperes V - Volts C C GE I - Amperes CM I - Amperes I - Amperes F C IXBH 40N140 IXBH 40N160 400 50 V = 960V V = 960V CE CE V = 15V V = 15V GE GE I = 20A 40 R = 22WC G 300 T = 125°C T = 125°C J J 30 200 20 100 10 0 0 0 10 203040 0 10203040 R - Ohms I - Amperes G C Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time 1 0.1 0.01 Single Pulse 0.001 IXBH40 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance © 2000 IXYS All rights reserved 4 - 4 t - nanoseconds Z - K/W fi thJC t - nanoseconds d(off)
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One of our top priorities is maintaining our business with precision, and we are constantly looking for affiliates that can help us achieve our goal. With the aid of GID Industrial, our obsolete product management has never been more efficient. They have been a great resource to our company, and have quickly become a go-to supplier on our list!
Bucher Emhart Glass
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Fuji
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Our company provides services to aid in the manufacture of technological products, such as semiconductors and flat panel displays, and often searching for distributors of obsolete product we require can waste time and money. Finding GID Industrial proved to be a great asset to our company, with cost effective solutions and superior knowledge on all of their materials, it’d be hard to find a better provider of obsolete or hard to find products.
Applied Materials
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When I can't find an obsolete part, I first call GID and they'll come up with my parts every time. Great customer service and follow up as well. Scott emails me from time to time to touch base and see if we're having trouble finding something.....which is often with our 25 yr old equipment.
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