Advanced Technical Information High Voltage, High Gain IXBH 16N170A V = 1700 V CES TM BIMOSFET Monolithic IXBT 16N170A I =16A C25 Bipolar MOS Transistor V = 6.0 V CE(sat) t =50ns fi(typ) Symbol Test Conditions Maximum Ratings TO-268 (IXBT) V T = 25�C to 150�C 1700 V CES J V T = 25�C to 150�C; R = 1 M� 1700 V CGR J GE G E V Continuous ������������20 V GES V Transient ���30 V GEM I T = 25�C16A C25 C TO-247 AD (IXBH) I T = 90�C10A C90 C I T = 25�C, 1 ms 40 A CM C SSOA V = 15 V, T = 125�C, R = 33 � I =40 A GE VJ G CM C (TAB) (RBSOA) Clamped inductive load V = 1350 V G CES C E t V = 15 V, V = 1200V, T = 125�C SC GE CES J (SCSOA) R = 33 � non repetitive 10 �s G G = Gate, C = Collector, E = Emitter, TAB = Collector P T = 25�C 150 W C C T -55 ... +150 �C J Features T 150 �C JM • Monolithic fast reverse diode T -55 ... +150 �C stgHigh Blocking Voltage JEDEC TO-268 surface mount and Maximum Lead temperature for soldering 300 �C JEDEC TO-247 AD packages 1.6 mm (0.062 in.) from case for 10 s Low switching losses Maximum tab temperature for soldering SMD devices for 10 s 260 �C High current handling capability M Mounting torque (M3) (TO-247) 1.13/10 Nm/lb.in. d MOS Gate turn-on Weight TO-247 6 g - drive simplicity TO-268 4 g Molding epoxies meet UL 94 V-0 flammability classification Applications Symbol Test Conditions Characteristic Values (T = 25�C, unless otherwise specified)AC motor speed control J min. typ. max.Uninterruptible power supplies (UPS) Switched-mode and resonant-mode BV I = 250 �A, V = 0 V 1700 V power supplies CES C GE V I = 250 �A, V = V 2.5 5.5 VCapacitor discharge circuits GE(th) C CE GE I V = 0.8 V 50 �A CES CE CES Advantages V = 0 V; Note 1 T = 125�C 1.5 mA GE J Lower conduction losses than MOSFETs I V = 0 V, V = �20 V �100 nAHigh power density GES CE GE Suitable for surface mounting V I = I , V = 15 V 6.0 VEasy to mount with 1 screw, CE(sat) C C90 GE Note 2 T = 125�C 5.0 V J (isolated mounting screw hole) IXYS reserves the right to change limits, test conditions, and dimensions. 98707 (02/23/00) © 2000 IXYS All rights reserved 1 - 2 IXBH 16N170A IXBT 16N170A Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25�C, unless otherwise specified) J min. typ. max. g I = I ; V = 10 V, 8 12.5 S fs C C90 CE Pulse test, t � 300 �s, duty cycle � 2 % C 1400 pF ies C V = 25 V, V = 0 V, f = 1 MHz 90 pF oes CE GE C 31 pF res Q 65 nC g Q I = I , V = 15 V, V = 0.5 V 13 nC ge C C90 GE CE CES Q 22 nC gc Inductive load, T = 25�C t 15 ns Dim. Millimeter Inches J d(on) Min. Max. Min. Max. I = I , V = 15 V t 25 ns C C90 GE ri A 19.81 20.32 0.780 0.800 V = 0.8 V , R = R = 10 � CE CES G off B 20.80 21.46 0.819 0.845 t 160 250 ns d(off) Remarks: Switching times may C 15.75 16.26 0.610 0.640 t 50 100 ns fi increase for V (Clamp) > 0.8  V , D 3.55 3.65 0.140 0.144 CE CES E higher T or increased R 1.2 2.5 mJ off J G E 4.32 5.49 0.170 0.216 F 5.4 6.2 0.212 0.244 t 15 ns d(on) G 1.65 2.13 0.065 0.084 Inductive load, T = 125�C J H - 4.5 - 0.177 t 28 ns ri I = I , V = 15 V C C90 GE J 1.0 1.4 0.040 0.055 E 2.0 mJ on K 10.8 11.0 0.426 0.433 V = 0.8 V , R = R = 10 � CE CES G off t 220 ns L 4.7 5.3 0.185 0.209 d(off) Remarks: Switching times may M 0.4 0.8 0.016 0.031 t 150 ns fi increase for V (Clamp) > 0.8  V , N 1.5 2.49 0.087 0.102 CE CES higher T or increased R J G E 2.6 mJ off 3 TO-268AA (D PAK) R 0.83 K/W thJC R (TO-247) 0.25 K/W thCK Reverse Diode Characteristic Values (T = 25�C, unless otherwise specified) J Symbol Test Conditions min. typ. max. V I = I , V = 0 V, Pulse test, 5.0 V F F C90 GE t < 300 us, duty cycle d < 2% I I = I , V = 0 V, -di /dt = 50 A/us 10 A RM F C90 GE F t v = 100V 360 ns rr R Notes: Dim. Millimeter Inches Min. Max. Min. Max. 1. Device must be heatsunk for high Min. Recommended Footprint temperature leakage current A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 measurements to avoid thermal A .02 .25 .001 .010 2 runaway. b 1.15 1.45 .045 .057 2. Pulse test, t � 300 �s, duty cycle � 2 %. b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: © 2000 IXYS All rights reserved 2 - 2 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025