INTERSIL HS-1100RH

HS-1100RH Data Sheet August 1999 File Number 4100.2 Radiation Hardened, Ultra High Speed Features Current Feedback AmpliŢer • Electrically Screened to SMD # 5962-94676 The HS-1100RH is a radiation hardened high speed, • QML QualiŢed per MIL-PRF-38535 Requirements wideband, fast settling current feedback ampliŢer. Built with • Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ) Intersil’s proprietary, complementary bipolar UHF-1 (DI bonded wafer) process, it is the fastest monolithic ampliŢer • Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ) available from any semiconductor manufacturer. These • Very High Slew Rate . . . . . . . . . . . . . . . . 2300V/μs (Typ) devices are QML approved and are processed and screened in full compliance with MIL-PRF-38535. • Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . . 11ns (Typ) The HS-1100RH’s wide bandwidth, fast settling characteristic, • Excellent Gain Flatness (to 50MHz). . . . . . . 0.05dB (Typ) and low output impedance make this amplifier ideal for driving • High Output Current . . . . . . . . . . . . . . . . . . . 65mA (Typ) fast A/D converters. • Fast Overdrive Recovery . . . . . . . . . . . . . . . . <10ns (Typ) Component and composite video systems will also beneŢt • Total Gamma Dose. . . . . . . . . . . . . . . . . . . . 300kRAD(Si) from this ampliŢer’s performance, as indicated by the excellent gain ţatness, and 0.03%/0.05 Deg. Differential • Latch Up . . . . . . . . . . . . . . . . . . . . . None (DI Technology) Gain/Phase speciŢcations (R = 75Ω). L Applications SpeciŢcations for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The • Video Switching and Routing SMD numbers listed here must be used when ordering. • Pulse and Video AmpliŢers Detailed Electrical SpeciŢcations for these devices are • Wideband AmpliŢers contained in SMD 5962-94676. A “hot-link” is provided on our homepage for downloading. • RF/IF Signal Processing http://www.intersil.com/spacedefense/space.htm • Flash A/D Driver Ordering Information • Imaging Systems INTERNAL TEMP. RANGE Pinout o ORDERING NUMBER MKT. NUMBER ( C) HS-1100RH GDIP1-T8 (CERDIP) 5962F9467602VPA HS7-1100RH-Q -55 to 125 OR CDIP2-T8 (SBDIP) 5962F9467602VPC HS7B-1100RH-Q -55 to 125 TOP VIEW HFA1100IJ (Sample) HFA1100IJ -40 to 85 NC 1 8 NC HFA11XXEVAL Evaluation Board -IN 2 7 V+ - + +IN 3 6 OUT V- 4 5 NC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-1100RH traces connected to -IN, and connections to -IN should be Typical Applications kept as short as possible. Optimum Feedback Resistor An example of a good high frequency layout is the The enclosed plots of inverting and non-inverting frequency Evaluation Board shown in Figure 2. response illustrate the performance of the HS-1100RH in various gains. Although the bandwidth dependency on Driving Capacitive Loads closed loop gain isn’t as severe as that of a voltage Capacitive loads, such as an A/D input, or an improperly feedback amplifier, there can be an appreciable decrease terminated transmission line will degrade the ampliŢer’s in bandwidth at higher gains. This decrease may be phase margin resulting in frequency response peaking and minimized by taking advantage of the current feedback possible oscillations. In most cases, the oscillation can be amplifier’s unique relationship between bandwidth and R . F avoided by placing a resistor (R ) in series with the output All current feedback amplifiers require a feedback resistor, S prior to the capacitance. even for unity gain applications, and R , in conjunction with F the internal compensation capacitor, sets the dominant Figure 1 details starting points for the selection of this pole of the frequency response. Thus, the amplifier’s resistor. The points on the curve indicate the R and C S L bandwidth is inversely proportional to R . The HS-1100RH F combinations for the optimum bandwidth, stability, and design is optimized for a 510Ω R at a gain of +1. F settling time, but experimental Ţne tuning is recommended. Decreasing R in a unity gain application decreases F Picking a point above or to the right of the curve yields an stability, resulting in excessive peaking and overshoot. At overdamped response, while points below or left of the curve higher gains the amplifier is more stable, so R can be F indicate areas of underdamped performance. decreased in a trade-off of stability for bandwidth. The table below lists recommended R values for various F 50 gains, and the expected bandwidth. 45 GAIN BANDWIDTH 40 A = +1 V (ACL) R (Ω) (MHz) F 35 -1 430 580 30 25 +1 510 850 20 +2 360 670 15 +5 150 520 10 +10 180 240 5 A = +2 V 0 +19 270 125 0 40 80 120 160 200 240 280 320 360 400 LOAD CAPACITANCE (pF) PC Board Layout FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs The frequency response of this ampliŢer depends greatly on LOAD CAPACITANCE the amount of care taken in designing the PC board. The use of low inductance components such as chip R and C form a low pass network at the output, thus S L resistors and chip capacitors is strongly recommended, limiting system bandwidth well below the ampliŢer bandwidth while a solid ground plane is a must! of 850MHz. By decreasing R as C increases (as S L illustrated in the curves), the maximum bandwidth is Attention should be given to decoupling the power supplies. obtained without sacriŢcing stability. Even so, bandwidth A large value (10μF) tantalum in parallel with a small value does decrease as you move to the right along the curve. For (0.1μF) chip capacitor works well in most cases. example, at A = +1, R = 50Ω, C = 30pF, the overall V S L Terminated microstrip signal lines are recommended at the bandwidth is limited to 300MHz, and bandwidth drops to input and output of the device. Capacitance directly on the 100MHz at A = +1, R =5Ω, C = 340pF. V S L output must be minimized, or isolated as discussed in the next section. Evaluation Board The performance of the HS-1100RH may be evaluated using Care must also be taken to minimize the capacitance to the HFA11XXEVAL Evaluation Board. ground seen by the ampliŢer’s inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting The layout and schematic of the board are shown in in pulse overshoot and possible instability. To this end, it is Figure 2. To order evaluation boards, please contact your recommended that the ground plane be removed under local sales ofŢce. 2 R (Ω) S HS-1100RH VH 1 +IN OUT V+ VL V- GND FIGURE 2A. TOP LAYOUT FIGURE 2B. BOTTOM LAYOUT 500 500 V H R 1 1 8 10μF 0.1μF 2 7 +5V 50Ω 50Ω IN 3 6 OUT V 4 5 L 0.1μF GND 10μF -5V GND FIGURE 2C. SCHEMATIC FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT Typical Performance Characteristics Device Characterized at: V = ±5V, R = 360Ω, A = +2V/V, R = 100Ω, Unless Otherwise SpeciŢed SUPPLY F V L PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS o Input Offset Voltage (Note 1) V = 0V 25C2 mV CM o Average Offset Voltage Drift Versus Temperature Full 10 μV/ C o V CMRR ΔV = ±2V 25C46 dB IO CM o V PSRR ΔV = ±1.25V 25C50 dB IO S o +Input Current (Note 1) V = 0V 25C25 μA CM o Average +Input Current Drift Versus Temperature Full 40 nA/ C o - Input Current (Note 1) V = 0V 25C12 μA CM o Average -Input Current Drift Versus Temperature Full 40 nA/ C o +Input Resistance ΔV = ±2V 25C50 kΩ CM o - Input Resistance 25C16 Ω o Input Capacitance 25 C 2.2 pF o Input Noise Voltage (Note 1) f = 100kHz 25 C 4 nV/√Hz o +Input Noise Current (Note 1) f = 100kHz 25 C 18 pA/√Hz o -Input Noise Current (Note 1) f = 100kHz 25 C 21 pA/√Hz Input Common Mode Range Full ±3.0 V o Open Loop Transimpedance A = -1 25 C 500 kΩ V 3 HS-1100RH Typical Performance Characteristics (Continued) Device Characterized at: V = ±5V, R = 360Ω, A = +2V/V, R = 100Ω, Unless Otherwise SpeciŢed SUPPLY F V L PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS o Output Voltage A = -1, R = 100Ω 25 C ±3.3 V V L A = -1, R = 100Ω Full ±3.0 V V L o o Output Current (Note 1) A = -1, R = 50Ω 25 C to 125 C ±65 mA V L o o A = -1, R = 50Ω -55 C to 0 C ±50 mA V L o DC Closed Loop Output Resistance 25 C 0.1 W Quiescent Supply Current (Note 1) R = Open Full 24 mA L o -3dB Bandwidth (Note 1) A = -1, R = 430Ω, V = 200mV 25 C 580 MHz V F OUT P-P o A = +1, R = 510Ω, V = 200mV 25 C 850 MHz V F OUT P-P o A = +2, R = 360Ω, V = 200mV 25 C 670 MHz V F OUT P-P o Slew Rate A = +1, R = 510Ω, V = 5V 25 C 1500 V/μs V F OUT P-P o A = +2, V = 5V 25 C 2300 V/μs V OUT P-P o Full Power Bandwidth V = 5V 25 C 220 MHz OUT P-P o Gain Flatness (Note 1) To 30MHz, R = 510Ω 25 C ±0.014 dB F o To 50MHz, R = 510Ω 25 C ±0.05 dB F o To 100MHz, R = 510Ω 25 C ±0.14 dB F o Linear Phase Deviation (Note 1) To 100MHz, R = 510Ω 25 C ±0.6 Degrees F o 2nd Harmonic Distortion (Note 1) 30MHz, V = 2V 25 C -55 dBc OUT P-P o 50MHz, V = 2V 25 C -49 dBc OUT P-P o 100MHz, V = 2V 25 C -44 dBc OUT P-P o 3rd Harmonic Distortion (Note 1) 30MHz, V = 2V 25 C -84 dBc OUT P-P o 50MHz, V = 2V 25 C -70 dBc OUT P-P o 100MHz, V = 2V 25 C -57 dBc OUT P-P o 3rd Order Intercept (Note 1) 100MHz, R = 510Ω 25 C 30 dBm F o 1dB Compression 100MHz, R = 510Ω 25 C 20 dBm F o Reverse Isolation (S12) 40MHz, R = 510Ω 25 C -70 dB F o 100MHz, R = 510Ω 25 C -60 dB F o 600MHz, R = 510Ω 25 C -32 dB F o Rise and Fall Time V = 0.5V 25 C 500 ps OUT P-P o V = 2V 25 C 800 ps OUT P-P o Overshoot (Note 1) V = 0.5V , Input t /t = 550ps 25C11 % OUT P-P R F o Settling Time (Note 1) To 0.1%, V = 2V to 0V, R = 510Ω 25C11 ns OUT F o To 0.05%, V = 2V to 0V, R = 510Ω 25C19 ns OUT F o To 0.02%, V = 2V to 0V, R = 510Ω 25C34 ns OUT F o Differential Gain A = +2, R = 75Ω, NTSC 25 C 0.03 % V L o Differential Phase A = +2, R = 75Ω, NTSC 25 C 0.05 Degrees V L o Overdrive Recovery Time R = 510Ω, V = 5V 25 C 7.5 ns F IN P-P NOTE: 1. See Typical Performance Curves for more information. 4 HS-1100RH o Typical Performance Curves V = ±5V, R = 510Ω, R = 100Ω, T = 25 C, Unless Otherwise SpeciŢed SUPPLY F L A 120 1.2 90 0.9 60 0.6 30 0.3 0 0 -30 -0.3 -60 -0.6 -90 -0.9 -120 -1.2 5ns/DIV. 5ns/DIV. FIGURE 3. SMALL SIGNAL PULSE RESPONSE (A = +2) FIGURE 4. LARGE SIGNAL PULSE RESPONSE (A = +2) V V GAIN GAIN 0 0 A = -1 V -3 -3 A = +1 V A = -5 V A = +2 -6 -6 V A = -10 V A = +6 V -9 -9 A = -20 V A = +11 V -12 -12 PHASE PHASE 180 0 -90 90 A = -1 A = +1 V V A = -5 0 -180 A = +2 V V A = -10 A = +6 V -270 V -90 A = +11 A = -20 V V -360 -180 0.3 1 10 100 1K 0.3 1 10 100 1K FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 5. NON-INVERTING FREQUENCY RESPONSE FIGURE 6. INVERTING FREQUENCY RESPONSE (V = 200mV ) (V = 200mV ) OUT P-P OUT P-P +6 R = 1kΩ L R = 1kΩ +3 L +3 GAIN GAIN 0 0 R = 100Ω L -3 -3 R = 50Ω L R = 100Ω L -6 R = 50Ω L -6 R = 50Ω L PHASE R = 100Ω L PHASE 0 0 R = 50Ω L -90 -90 R = 100Ω L R = 1kΩ R = 1kΩ L L -180 -180 R = 100Ω L -270 R = 100Ω -270 L R = 1kΩ R = 1kΩ L L -360 -360 0.3 1 10 100 1K 0.3 1 10 100 1K FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS LOAD FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (A = +1, V = 200mV ) RESISTORS (A = +2, V = 200mV ) V OUT P-P V OUT P-P 5 GAIN (dB) GAIN (dB) NORMALIZED OUTPUT VOLTAGE (mV) PHASE (DEGREES) PHASE (DEGREES) GAIN (dB) NORMALIZED GAIN (dB) NORMALIZED OUTPUT VOLTAGE (V) PHASE (DEGREES) PHASE (DEGREES) HS-1100RH o Typical Performance Curves V = ±5V, R = 510Ω, R = 100Ω, T = 25 C, Unless Otherwise SpeciŢed (Continued) SUPPLY F L A +20 +20 +10 +10 0 0 0.160V P-P 0.32V -10 P-P -10 0.500V P-P 1.00V P-P 0.920V P-P -20 -20 1.63V 1.84V P-P P-P -30 -30 3.26V P-P 0.3 1 10 100 1K 0.3 1 10 100 1K FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT FIGURE 10. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (A = +1) VOLTAGES (A = +2) V V +20 950 +10 0 900 -10 0.96V P-P 850 -20 TO 3.89V P-P -30 800 750 700 -50 -25 0 25 50 75 100 125 0.3 1 10 100 1K o FREQUENCY (MHz) TEMPERATURE ( C) FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS OUTPUT FIGURE 12. -3dB BANDWIDTH vs TEMPERATURE (A = +1) V VOLTAGES (A = +6) V +2.0 +1.5 +1.0 0 +0.5 -0.05 0 -0.10 -0.5 -0.15 -1.0 -0.20 -1.5 -2.0 0 15 30 45 60 75 90 105 120 135 150 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) FIGURE 13. GAIN FLATNESS (A = +2) FIGURE 14. DEVIATION FROM LINEAR PHASE (A = +2) V V 6 GAIN (dB) GAIN (dB) NORMALIZED GAIN (dB) DEVIATION (DEGREES) BANDWIDTH (MHz) GAIN (dB) NORMALIZED HS-1100RH o Typical Performance Curves V = ±5V, R = 510Ω, R = 100Ω, T = 25 C, Unless Otherwise SpeciŢed (Continued) SUPPLY F L A 40 35 0.6 30 0.4 25 0.2 0 20 -0.2 15 -0.4 10 -0.6 5 0 0 100 200 300 400 -4 1 6 11 16 21 26 31 36 41 46 FREQUENCY (MHz) TIME (ns) FIGURE 15. SETTLING RESPONSE (A = +2, V = 2V) FIGURE16. 3RDORDERINTERMODULATIONINTERCEPT V OUT (2-TONE) -30 -30 -35 -40 -40 -50 100MHz 100MHz -45 -60 50MHz -50 -70 50MHz -80 -55 -60 -90 30MHz 30MHz -100 -65 -110 -70 -5 -3 -1 1 3 5 7 9 11 13 15 -5 -3 -1 1 3 5 7 9 11 13 15 OUTPUT POWER (dBm) OUTPUT POWER (dBm) FIGURE 17. 2ND HARMONIC DISTORTION vs P FIGURE 18. 3RD HARMONIC DISTORTION vs P OUT OUT 38 35 R = 360Ω 36 F V = 2V 34 OUT P-P 30 32 V = 1V OUT P-P 30 25 28 R = 360Ω R = 360Ω 26 F F V = 1V OUT P-P 20 V = 0.5V 24 OUT P-P V = 0.5V OUT P-P 22 20 15 18 R = 510Ω F V = 2V OUT P-P 16 V = 2V OUT P-P 10 14 R = 510Ω F 12 V = 1V R = 510Ω OUT P-P F 5 10 V = 0.5V OUT P-P 8 0 6 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 INPUT RISE TIME (ps) INPUT RISE TIME (ps) FIGURE 19. OVERSHOOT vs INPUT RISE TIME (A = +1) FIGURE 20. OVERSHOOT vs INPUT RISE TIME (A = +2) V V 7 SETTLING ERROR (%) OVERSHOOT (%) DISTORTION (dBc) DISTORTION (dBc) OVERSHOOT (%) INTERCEPT POINT (dBm) HS-1100RH o Typical Performance Curves V = ±5V, R = 510Ω, R = 100Ω, T = 25 C, Unless Otherwise SpeciŢed (Continued) SUPPLY F L A 25 36 34 32 24 30 28 23 26 24 22 22 20 18 21 16 14 20 12 10 19 8 6 18 4 360 400 440 480 520 560 600 640 680 -60 -40 -20 0 20 40 60 80 100 120 o FEEDBACK RESISTOR (Ω) TEMPERATURE ( C) FIGURE 21. OVERSHOOT vs FEEDBACK RESISTOR (A = +2, FIGURE 22. SUPPLY CURRENT vs TEMPERATURE V t = 200ps, V = 2V ) R OUT P-P 22 2.8 45 21 2.7 42 20 2.6 39 19 18 2.5 36 17 2.4 33 +I 16 BIAS 2.3 30 15 2.2 27 14 2.1 24 V 13 IO 2 21 12 1.9 18 11 1.8 15 10 1.7 12 9 -I BIAS 8 1.6 9 7 1.5 6 6 1.4 3 5 1.3 0 59 678 10 -60 -40 -20 0 20 40 60 80 100 120 o TOTAL SUPPLY VOLTAGE (V+ - V-, V) TEMPERATURE ( C) FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 24. V AND BIAS CURRENTS vs TEMPERATURE IO 3.7 30 300 3.6 275 3.5 +V OUT 25 250 3.4 225 3.3 20 200 3.2 | - V | OUT 175 3.1 15 150 3 125 2.9 10 100 2.8 75 2.7 5 50 ENI eni 2.6 INI- ini- 25 INI+ ini+ 2.5 0 0 -60 -40 -20 0 20 40 60 80 100 120 100 1K 10K 100K o FREQUENCY (Hz) TEMPERATURE ( C) FIGURE 26. INPUT NOISE vs FREQUENCY FIGURE 25. OUTPUT VOLTAGE vs TEMPERATURE (A = -1, V R = 50Ω) L 8 OUTPUT VOLTAGE (V) SUPPLY CURRENT (mA) OVERSHOOT (%) NOISE VOLTAGE (nV/√HZ) INPUT OFFSET VOLTAGE (mV) SUPPLY CURRENT (mA) BIAS CURRENTS (μA) NOISE CURRENT (pA/√HZ) HS-1100RH Test Circuit V+ + 10 0.1 I CC 510 V IN NC 510 0.1 0.1 K = POSITION 1: 2 0.1 0.1 7 V X 100 V = IO 2 100 - 6 1K + 510 V DUT V 470pF X 2 OUT - 3 + X100 1 100 100 K 510 2 K = POSITION 2: 4 2 V X -I = K BIAS 3 50K 200pF 10 0.1 100K (0.01%) + V Z +I = BIAS 100K - V I Z + 0.1 EE HA-5177 NOTES: 2. Unless otherwise noted, component value V- multiplier and tolerances shall be as follows: Resistors, Ω±1%. Capacitors, μF ±10% 3. Chip Components Recommended. Test Waveforms SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE V+ (+5V) V+ (+5V) V V V OUT V OUT IN + + IN - - 2 2 R R R S F 50Ω 50Ω S 50Ω 50Ω R 50Ω 360Ω 50Ω F R G 510Ω 360Ω V- (-5V) V- (-5V) A = +1 TEST CIRCUIT A = +2 TEST CIRCUIT V V V V OUT OUT +2.5V +2.5V +250mV +250mV 90% 90% 90% 90% +SR -SR T , +OS T , -OS R F 10% 10% 10% 10% -2.5V -2.5V -250mV -250mV LARGE SIGNAL WAVEFORM SMALL SIGNAL WAVEFORM 9 HS-1100RH Burn-In Circuit Irradiation Circuit HS-1100RH CERDIP HS-1100RH CERDIP R 3 R 3 1 8 D 1 8 R 3 2 R D 2 3 2 7 V+ 2 7 V+ - R 1 + - C D R 1 1 1 + 3 6 C 1 3 6 D 4 4 5 V- V- 4 5 D C 2 2 C 2 NOTES: NOTES: 11. R = R = 1kΩ, ±5%. 4. R = R = 1kΩ, ±5% (Per Socket). 1 2 1 2 12. R = 10kΩ, ±5%. 5. R = 10kΩ, ±5% (Per Socket). 3 3 13. C = C = 0.1μF. 6. C = C = 0.01μF (Per Socket) or 0.1μF (Per Row) Min. 1 2 1 2 14. V+ = +5.5V ± 0.5V. 7. D = D = 1N4002 or Equivalent (Per Board). 1 2 15. V- = -5.5V ± 0.5V. 8. D = D = 1N4002 or Equivalent (Per Socket). 3 4 9. V+ = +5.5V ±0.5V. 10. V- = -5.5V ±0.5V. 10 HS-1100RH Die Characteristics DIE DIMENSIONS: Substrate: 63 mils x 44 mils x 19 mils ±1 mil UHF-1, Bonded Wafer, DI (1600μm x 1130μm x 483μm ±25.4μm) ASSEMBLY RELATED INFORMATION: INTERFACE MATERIALS: Substrate Potential (Powered Up): Glassivation: Floating Type: Nitride ADDITIONAL INFORMATION: Å ±0.5kÅ Thickness: 4k Worst Case Current Density: Top Metallization: 5 2 A/cm 1.6 x 10 Type: Metal 1: AICu(2%)/TiW Å ±0.4kÅ Thickness: Metal 1: 8k Transistor Count: Type: Metal 2: AICu (2%) 52 Thickness: Metal 2: 16kÅ ±0.8kÅ Metallization Mask Layout HS-1100RH +IN -IN V- BAL VL VH BAL V+ OUT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiŢcation. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 11