ANALOG DEVICES AD8519

8 MHz Rail-to-Rail Operational Amplifiers AD8519/AD8529 FEATURES PIN CONFIGURATIONS Space-saving SC70 and SOT-23 packaging NC 1 8 NC Wide bandwidth: 8 MHz @ 5 V –IN A 2 7 V+ Low offset voltage: 1.2 mV maximum +IN A 3 6 OUT A Rail-to-rail output swing V– 4 AD8519 5 NC 2.9 V/μs slew rate NC = NO CONNECT Unity gain stable Figure 1. 8-Lead SOIC (R Suffix) Single-supply operation: 2.7 V to 12 V APPLICATIONS AD8519 OUT A 1 5 V+ Portable communications V– 2 Microphone amplifiers +IN A 3 4 –IN A Portable phones Sensor interface Figure 2. 5-Lead SC70 and SOT-23 (KS and RJ Suffixes) Active filters PCMCIA cards OUT A 1 8 V+ AD8529 ASIC input drivers –IN A 2 7 OUT B Wearable computers +IN A 3 6 –IN B Battery-powered devices V– 4 5 +IN B Voltage reference buffers Personal digital assistants Figure 3. 8-Lead SOIC and MSOP (R and RM Suffixes) GENERAL DESCRIPTION The AD8519 and AD8529 are rail-to-rail output bipolar The small SC70 package makes it possible to place the AD8519 amplifiers with a unity gain bandwidth of 8 MHz and a typical next to sensors, reducing external noise pickup. voltage offset of less than 1 mV. The AD8519 brings precision The AD8519/AD8529 is specified over the extended industrial and bandwidth to the SC70 and SOT-23 packages. The low (−40°C to +125°C) temperature range. The AD8519 is available supply current makes the AD8519/AD8529 ideal for battery- in 5-lead SC70 and 5-lead SOT-23 packages, and an 8-lead powered applications. The rail-to-rail output swing of the SOIC surface-mount package. The AD8529 is available in 8-lead AD8519/AD8529 is larger than standard video op amps, making SOIC and 8-lead MSOP packages. them useful in applications that require greater dynamic range than standard video op amps. The 2.9 V/μs slew rate makes the AD8519/AD8529 a good match for driving ASIC inputs such as voice codecs. Rev. D Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Fax: 781.461.3113 ©1998–2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. 01756-002 01756-001 01756-003 AD8519/AD8529 TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................7 Applications....................................................................................... 1 Typical Performance Characteristics ..............................................8 Pin Configurations ........................................................................... 1 Applications Information .............................................................. 12 General Description ......................................................................... 1 Maximum Power Dissipation ................................................... 12 Revision History ............................................................................... 2 Precision Full-Wave Rectifier ................................................... 12 Specifications..................................................................................... 3 10× Microphone Preamp Meets PC99 Specifications ........... 13 Electrical Characteristics............................................................. 3 Two-Element Varying Bridge Amplifier ................................. 13 Absolute Maximum Ratings............................................................ 7 Outline Dimensions....................................................................... 14 Thermal Resistance ...................................................................... 7 Ordering Guide .......................................................................... 15 REVISION HISTORY 5/07—Rev. C to Rev. D Changes to Features.......................................................................... 1 Changes to General Description .................................................... 1 Changes to Two-Element Bridge Amplifier Section.................. 13 Updated Outline Dimensions ....................................................... 14 2/03—Rev. B to Rev. C Changed μSOIC to MSOP.................................................Universal Changed SO-8 to R-8 .........................................................Universal Changes to Precision Full-Wave Rectifier section ....................... 9 Changes to 10× Microphone Preamp Meets PC99 Specifications section................................................................... 9 Updated Outline Dimensions ....................................................... 12 Rev. D | Page 2 of 16 AD8519/AD8529 SPECIFICATIONS ELECTRICAL CHARACTERISTICS V = 5.0 V, V− = 0 V, V = 2.5 V, T = 25°C, unless otherwise noted. S CM A Table 1. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V AD8519AKS, AD8519ART 600 1100 μV OS −40°C ≤ T ≤ +125°C 800 1300 μV A AD8519AR (R-8), AD8529 600 1000 μV −40°C ≤ TA ≤ +125°C 1100 μV Input Bias Current IB 300 nA −40°C ≤ TA ≤ +125°C 400 nA Input Offset Current I ±50 nA OS −40°C ≤ T ≤ +125°C ±100 nA A Input Voltage Range V 0 4 V CM Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4.0 V, −40°C ≤ TA ≤ +125°C 63 100 dB Large Signal Voltage Gain AVO RL = 2 kΩ, 0.5 V < VOUT < 4.5 V 30 V/mV RL = 10 kΩ, 0.5 V < VOUT < 4.5 V 50 100 V/mV R = 10 kΩ, −40°C ≤ T ≤ +125°C 30 V/mV L A Offset Voltage Drift ∆V /∆T 2 μV/°C OS Bias Current Drift ∆IB/∆T 500 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing High V I = 250 μA OH L −40°C ≤ TA ≤ +125°C 4.90 V IL = 5 mA 4.80 V Output Voltage Swing Low VOL IL = 250 μA −40°C ≤ T ≤ +125°C 80 mV A I = 5 mA 200 mV L Short-Circuit Current I Short to ground, instantaneous ±70 mA SC Maximum Output Current IOUT ±25 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 7 V 110 dB S −40°C ≤ TA ≤ +125°C 80 dB Supply Current/Amplifier ISY VOUT = 2.5 V 600 1200 μA −40°C ≤ T ≤ +125°C 1400 μA A DYNAMIC PERFORMANCE Slew Rate SR 1 V < VOUT < 4 V, RL = 10 kΩ 2.9 V/μs Settling Time t To 0.01% 1200 ns S Gain Bandwidth Product GBP 8 MHz Phase Margin Φ 60 Degrees m NOISE PERFORMANCE Voltage Noise e p-p 0.1 Hz to 10 Hz 0.5 μV p-p n Voltage Noise Density e f = 1 kHz 10 nV/√Hz n Current Noise Density in f = 1 kHz 0.4 pA/√Hz Rev. D | Page 3 of 16 AD8519/AD8529 V = 3.0 V, V− = 0 V, V = 1.5 V, T = 25°C, unless otherwise noted. S CM A Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V AD8519AKS, AD8519ART 700 1200 μV OS −40°C ≤ T ≤ +125°C 900 1400 μV A AD8519AR (R-8), AD8529 700 1100 μV −40°C ≤ TA ≤ +125°C 1200 μV Input Bias Current IB 300 nA Input Offset Current IOS ±50 nA Input Voltage Range V 0 2 V CM Common-Mode Rejection Ratio CMRR 0 V ≤ V ≤ 2.0 V, CM −40°C ≤ T ≤ +125°C 55 75 dB A Large Signal Voltage Gain AVO RL = 2 kΩ, 0.5 V < VOUT < 2.5 V 20 V/mV RL = 10 kΩ 20 30 V/mV OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 250 μA 2.90 V IL = 5 mA 2.80 V Output Voltage Swing Low V I = 250 μA 100 mV OL L I = 5 mA 200 mV L POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.5 V to 7 V, −40°C ≤ T ≤ +125°C 60 80 dB S A Supply Current/Amplifier I V = 1.5 V 600 1100 μA SY OUT −40°C ≤ T ≤ +125°C 1300 μA A DYNAMIC PERFORMANCE Slew Rate SR R = 10 kΩ 1.5 V/μs L Settling Time t To 0.01% 2000 ns S Gain Bandwidth Product GBP 6 MHz Phase Margin Φm 55 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 10 nV/√Hz Current Noise Density in f = 1 kHz 0.4 pA/√Hz Rev. D | Page 4 of 16 AD8519/AD8529 V = 2.7 V, V− = 0 V, V = 1.35 V, T = 25°C, unless otherwise noted. S CM A Table 3. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V AD8519AKS, AD8519ART 700 1400 μV OS −40°C ≤ TA ≤ +125°C 900 1600 μV AD8519AR (R-8), AD8529 700 1200 μV −40°C ≤ TA ≤ +125°C 1300 μV Input Bias Current I 300 nA B Input Offset Current I ±50 nA OS Input Voltage Range V 0 2 V CM Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 1.7 V, −40°C ≤ TA ≤ +125°C 55 75 dB Large Signal Voltage Gain AVO RL = 2 kΩ, 0.5 V < VOUT < 2.2 V 20 V/mV RL = 10 kΩ 20 30 V/mV OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 250 μA 2.60 V IL = 5 mA 2.50 V Output Voltage Swing Low V I = 250 μA 100 mV OL L I = 5 mA 200 mV L POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.5 V to 7 V S −40°C ≤ T ≤ +125°C 60 80 dB A Supply Current/Amplifier ISY VOUT = 1.35 V 600 1100 μA −40°C ≤ TA ≤ +125°C 1300 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 1.5 V/μs Settling Time tS To 0.01% 2000 ns Gain Bandwidth Product GBP 6 MHz Phase Margin Φ 55 Degrees m NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 10 nV/√Hz Current Noise Density i f = 1 kHz 0.4 pA/√Hz n Rev. D | Page 5 of 16 AD8519/AD8529 V = 5.0 V, V− = −5 V, V = 0 V, T = 25°C, unless otherwise noted. S CM A Table 4. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V AD8519AKS, AD8519ART 600 1100 μV OS −40°C ≤ T ≤ +125°C 800 1300 μV A AD8519AR (R-8), AD8529 600 1000 μV −40°C ≤ TA ≤ +125°C 1100 μV Input Bias Current IB VCM = 0 V 300 nA VCM = 0 V, −40°C ≤ TA ≤ +125°C 400 nA Input Offset Current I V = 0 V ±50 nA OS CM V = 0 V, −40°C ≤ T ≤ +125°C ±100 nA CM A Input Voltage Range V −5 +4 V CM Common-Mode Rejection Ratio CMRR −4.9 V ≤ VCM ≤ +4.0 V, −40°C ≤ TA ≤ +125°C 70 100 dB Large Signal Voltage Gain AVO RL = 2 kΩ 30 V/mV R = 10 kΩ 50 200 V/mV L −40°C ≤ T ≤ +125°C 25 V/mV A Offset Voltage Drift ∆VOS/∆T 2 μV/°C Bias Current Drift ∆IB/∆T 500 pA/°C OUTPUT CHARACTERISTICS Output Voltage Swing High VOH IL = 250 μA −40°C ≤ TA ≤ +125°C 4.90 V IL = 5 mA 4.80 V Output Voltage Swing Low V I = 250 μA OL L −40°C ≤ T ≤ +125°C −4.90 V A I = 5 mA −4.80 V L Short-Circuit Current ISC Short to ground, instantaneous ±70 mA Maximum Output Current IOUT ±25 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±6 V, −40°C ≤ TA ≤ +125°C 60 100 dB Supply Current/Amplifier ISY VOUT = 0 V 600 1200 μA −40°C ≤ T ≤ +125°C 1400 μA A DYNAMIC PERFORMANCE Slew Rate SR −4 V < VOUT < +4 V, RL = 10 kΩ 2.9 V/μs Settling Time t To 0.01% 1000 ns S Gain Bandwidth Product GBP 8 MHz Phase Margin Φ 60 Degrees m NOISE PERFORMANCE Voltage Noise Density e f = 1 kHz 10 nV/√Hz n Current Noise Density i f = 1 kHz 0.4 n pA/√Hz Rev. D | Page 6 of 16 AD8519/AD8529 ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 5. Parameter Rating Table 6. Supply Voltage ±6 V 1 Package Type θ θ Unit JA JC 1 Input Voltage ±6 V 5-Lead SC70 (KS) 376 126 °C/W 2 Differential Input Voltage ±0.6 V 5-Lead SOT-23 (RJ) 230 146 °C/W Storage Temperature Range −65°C to +150°C 8-Lead SOIC (R) 158 43 °C/W Operating Temperature Range −40°C to +125°C 8-Lead MSOP (RM) 210 45 °C/W Junction Temperature Range −65°C to +150°C 1 θ is specified for worst-case conditions, that is, θ is specified for device JA JA Lead Temperature Range 300°C soldered in circuit board for SOT-23 and SOIC packages. (Soldering, 60 sec) 1 For supply voltages less than ±6 V, the input voltage is limited to less than or ESD CAUTION equal to the supply voltage. 2 For differential input voltages greater than ±0.6 V, the input current should be limited to less than 5 mA to prevent degradation or destruction of the input devices. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev. D | Page 7 of 16 AD8519/AD8529 TYPICAL PERFORMANCE CHARACTERISTICS 60 40 V = 5V COUNT = 395 OP AMPS V = 5V S S T = 25°C T = 25°C A A 0 50 –40 40 –80 30 –120 20 –160 10 –200 0 –240 –1.0 –0.6 –0.2 0.2 0.6 1.0 01 23 4 5 INPUT OFFSET VOLTAGE (mV) COMMON-MODE VOLTAGE (V) Figure 4. Input Offset Voltage Distribution Figure 7. Input Bias Current vs. Common-Mode Voltage 600 120 V = 5V S 100 550 80 60 500 40 20 450 02 46 8 10 12 01 234 5 SUPPLY VOLTAGE (V) COMMON-MODE VOLTAGE (V) Figure 5. Supply Current per Amplifier vs. Supply Voltage Figure 8. Common-Mode Rejection vs. Common-Mode Voltage 800 50 V = 5V S T = 25°C A 40 V = 5V S 700 GAIN 30 45 20 90 600 PHASE 10 135 V = 10V S 500 0 180 V = 2.7V, 3.0V S –10 225 400 –20 270 300 –30 –50 –25 0 25 50 75 100 125 150 100k 1M 10M 100M TEMPERATURE (°C) FREQUENCY (Hz) Figure 6. Supply Current per Amplifier vs. Temperature Figure 9. Open-Loop Gain, Phase vs. Frequency Rev. D | Page 8 of 16 SUPPLY CURRENT (µA) SUPPLY CURRENT (µA) QUANTITY OF AMPLIFIERS 01756-006 01756-005 01756-004 OPEN-LOOP GAIN (dB) INPUT BIAS CURRENT (nA) COMMON-MODE REJECTION (dB) 01756-008 01756-007 PHASE SHIFT (Degrees) 01756-009 AD8519/AD8529 60 60 V = 5V S V = 5V S R = 830Ω L V = 2.5V CM T = 25°C A R = 10kΩ 50 L C ≤ 5pF 40 L T = 25°C A V = ±50mV IN 40 20 30 0 –OS 20 +OS –20 10 –40 0 10k 100k 1M 10M 100M 10 100 1k FREQUENCY (Hz) CAPACITANCE (pF) Figure 10. Closed-Loop Gain vs. Frequency Figure 13. Overshoot vs. Capacitance Load 110 4 V = 5V S V = 5V S T = 25°C 100 A T = 25°C 3 A 1% 90 2 0.1% 80 1 70 0 60 –1 50 0.1% –2 40 1% –3 30 –4 20 1k 10k 100k 1M 10M 01 2 FREQUENCY (Hz) SETTLING TIME (µs) Figure 11. CMRR vs. Frequency Figure 14. Step Size vs. Settling Time 90 5 V = 5V V = 5V S S AVCC = 1 T = 25°C 80 A R = 10kΩ L T = 25°C 4 A 70 C = 15pF DISTORTION < 1% L –PSRR 60 +PSRR 3 50 40 2 30 20 1 10 0 0 1k 10k 100k 1M 10M 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) Figure 12. PSRR vs. Frequency Figure 15. Output Swing vs. Frequency Rev. D | Page 9 of 16 PSRR (dB) CMRR (dB) CLOSED-LOOP GAIN (dB) 01756-012 01756-011 01756-010 MAXIMUM OUTPUT SWING (V p-p) STEP SIZE (V) OVERSHOOT (%) 01756-015 01756-014 01756-013 AD8519/AD8529 300 V = 5V S V = ±2.5V S T = 25°C A A = 100kΩ V 250 e = 0.4µV p-p n 200 AVCC = 10 150 100 AVCC = 1 50 20mV 1s 0 100k 1M 10M FREQUENCY (Hz) Figure 16. Output Impedance vs. Frequency Figure 19. 0.1 Hz to 10 Hz Noise 80 V = 5V S T = 25°C 70 A V = ±2.5V S 60 V = 6V p-p IN A = 1 V 50 40 30 20 10 0 10 100 1k 10k 1V 20µs FREQUENCY (Hz) Figure 17. Voltage Noise Density Figure 20. No Phase Reversal 8 V = 5V S T = 25°C 7 A V = ±2.5V S AVCC = 1 6 T = 25°C A = 100pF C L 5 R = 10kΩ L 4 3 2 1 0 10 100 1k 10k 20mV 500ns FREQUENCY (Hz) Figure 18. Current Noise Density Figure 21. Small Signal Transient Response Rev. D | Page 10 of 16 CURRENT NOISE DENSITY (pA/ Hz) VOLTAGE NOISE DENSITY (nV/ Hz) OUTPUT IMPEDANCE (Ω) 01756-017 01756-016 01756-018 01756-021 01756-020 01756-019 AD8519/AD8529 V = ±2.5V S AVCC = 1 T = 25°C A C = 100pF L 500mV 50µs Figure 22. Large Signal Transient Response Rev. D | Page 11 of 16 01756-022 AD8519/AD8529 APPLICATIONS INFORMATION R4 MAXIMUM POWER DISSIPATION 10kΩ The maximum power that can be safely dissipated by the R1 R2 NODE A R3 R5 10kΩ 10kΩ 4.99kΩ 10kΩ AD8519/AD8529 is limited by the associated rise in junction V IN temperature. The maximum safe junction temperature is 150°C for these plastic packages. If this maximum is momentarily D2 D1 1N914 1N914 exceeded, proper circuit operation is restored as soon as the V U2 OUT die temperature is reduced. Operating the product in an AD8519 U1 overheated condition for an extended period can result in AD8519 R6 R7 permanent damage to the device. 5kΩ 3.32kΩ V CC PRECISION FULL-WAVE RECTIFIER VIRTUAL GROUND = 2 Slew rate is probably the most underestimated parameter when Figure 23. Precision Full-Wave Rectifier designing a precision rectifier. Yet without a good slew rate, Switching glitches are caused when D1 and D2 are both large glitches are generated during the period when both diodes momentarily off. This condition occurs every time the input are off. signal is equal to the virtual ground potential. When this The operation of the basic circuit (shown in Figure 23) should condition occurs, the U1 stage is taken out of the V equation OUT be examined before considering the slew rate further. U1 is set and V is equal to V × R5 × (R4 || R1 + R2 + R3). Note that OUT IN up to have two states of operation. D1 and D2 diodes switch the Node A should be V inverted or virtual ground, but in this IN output between the two states. State one is an inverter with a condition, Node A is simply tracking VIN. Given a sine wave gain of +1, and state two is a simple unity gain buffer where the input centered around virtual ground, glitches are generated output is equal to the value of the virtual ground. The virtual at the sharp negative peaks of the rectified sine wave. If the ground is the potential present at the noninverting node of the glitches are hard to notice on an oscilloscope, raise the fre- U1. State one is active when V is larger than the virtual IN quency of the sine wave until they become apparent. The size ground. D2 is on in this condition. If V drops below virtual IN of the glitches is proportional to the input frequency, the diode ground, D2 turns off and D1 turns on. This causes the output of turn-on potential (0.2 V or 0.65 V), and the slew rate of the op amp. U1 to simply buffer the virtual ground and this configuration is R6 and R7 are both necessary to limit the amount of bias state two. Therefore, the function of U1, which results from current related voltage offset. Unfortunately, there is no perfect these two states of operation, is a half-wave inverter. The U2 value for R6 because the impedance at the inverting node is function takes the inverted half wave at a gain of two and sums altered as D1 and D2 switch. Therefore, there is also some it into the original V wave, which outputs a rectified full wave. IN unresolved bias current related offset. To minimize this offset, −1 V = V − 2V < 0 OUT IN IN use lower value resistors or choose an FET amplifier if the optimized offset is still intolerable. This type of rectifier can be very precise if the following electrical parameters are adhered to: The AD8519 offers a unique combination of speed vs. power ratio at 2.7 V single supply, small size (SC70 and SOT-23), and low • All passive components should be of tight tolerance, 1% for noise that makes it an ideal choice for most high volume and resistors and 5% for capacitors. high precision rectifier circuits. • If the application circuit requires high impedance (that is, direct sensor interface), then an FET amplifier is a better choice than the AD8519. • An amp such as the AD8519, which has a great slew rate specification, yields the best result because the circuit involves switching. Rev. D | Page 12 of 16 01756-023 AD8519/AD8529 TWO-ELEMENT VARYING BRIDGE AMPLIFIER 10× MICROPHONE PREAMP MEETS PC99 SPECIFICATIONS There are a host of bridge configurations available to designers. For a complete analysis, look at the ubiquitous bridge and its This circuit, while lacking a unique topology, is anything but 1 different forms. Refer to the 1992 Amplifier Applications Guide . featureless when an AD8519 is used as the op amp. This preamp gives 20 dB gain over a frequency range of 20 Hz to 20 kHz and Figure 25 is a schematic of a two-element varying bridge. This is fully PC99 compliant in all parameters including THD + N, configuration is commonly found in pressure and flow transduc- dynamic range, frequency range, amplitude range, and crosstalk. ers. With a two-element varying bridge, the signal is 2× as Not only does this preamp comply with the PC99 specifications, compared to a single-element varying bridge. The advantages it far surpasses them. In fact, when the input noise is 120 dB, of this type of bridge are gain setting range and single-supply this preamp has a V noise of around 100 dB, which is suit- OUT application. Negative characteristics are nonlinear operation able for most professional 20-bit audio systems. At 120 dB THD and required R matching. Given these sets of conditions, + N in unity gain, the AD8519 is suitable for 24-bit professional requirements, and characteristics, the AD8519 can be successfully audio systems. In other words, the AD8519 will not be the used in this configuration because of its rail-to-rail output and limiting performance factor in audio systems despite its small low offset. Perhaps the greatest benefits of the AD8519, when size and low cost. used in the bridge configuration, are the advantages it can bring when placed in a remote bridge sensor. For example, the tiny Slew rate related distortion is not present at the lower voltages SC70 and SOT-23 packages reduce the overall sensor size; low because the AD8519 is so fast at 2.1 V/μs. A general rule of power allows for remote powering via batteries or solar cells, thumb for determining the necessary slew rate for an audio high output current drive to drive a long cable; and 2.7 V system is to take the maximum output voltage range of the operation for two-cell operation. device, given the design’s power rails, and divide by two. In Figure 24, the power rails are 2.7 V and the output is rail-to-rail. 2.7V R F Enter these numbers into the equation: 2.7/2 = 1.35 V, and the minimum ideal slew rate is 1.35 V/μs. R R While this data sheet gives only one audio example, many audio circuits are enhanced with the use of the AD8519. Examples AD8519 include: active audio filters such as bass, treble, and equalizers; R R R F PWM filters at the output of audio DACs; buffers and summers for mixing stations; and gain stages for volume control. Figure 25. Two-Element Varying Bridge Amplifier 240pF 2.7V 1 Adolfo Garcia and James Wong, Chapter 2, 1992, Amplifier Applications Guide. 30.9kΩ 1kΩ 2.7V C1 1µF CODEC LINE IN 3.09kΩ MIC OR MIC IN IN 1nF AD8519 NPO 48kΩ 46.4kΩ 93.1kΩ 2.7V 10µF ELECT Figure 24. 10× Microphone Preamplifier Rev. D | Page 13 of 16 01756-024 01756-025 .1 AX 0 0 M AD8519/AD8529 OUTLINE DIMENSIONS 5.00 (0.1968) 3.20 4.80 (0.1890) 3.00 2.80 85 6.20 (0.2441) 4.00 (0.1574) 8 5 5.15 1 5.80 (0.2284) 3.80 (0.1497) 3.20 4 4.90 3.00 4.65 2.80 1 4 0.50 (0.0196) 1.27 (0.0500) 45° BSC 1.75 (0.0688) 0.25 (0.0099) PIN 1 1.35 (0.0532) 0.25 (0.0098) 8° 0.65 BSC 0.10 (0.0040) 0° 0.95 0.51 (0.0201) COPLANARITY 0.85 1.10 MAX 1.27 (0.0500) 0.10 0.31 (0.0122) 0.25 (0.0098) 0.75 SEATING 0.40 (0.0157) PLANE 0.17 (0.0067) 0.80 8° 0.15 0.60 0.38 0.23 0° 0.00 0.40 0.22 0.08 COMPLIANT TO JEDEC STANDARDS MS-012-AA SEATING COPLANARITY CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS PLANE 0.10 (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. COMPLIANT TO JEDEC STANDARDS MO-187-AA Figure 26. 8-Lead Standard Small Outline Package [SOIC_N] Figure 27. 8-Lead Mini Small Outline Package [MSOP] Narrow Body (RM-8) (R-8) Dimensions shown in millimeters Dimensions shown in millimeters and (inches) 2.20 2.90 BSC 2.00 1.80 5 4 1.35 2.40 5 4 2.80 BSC 1.60 BSC 1.25 2.10 1.15 12 3 1.80 12 3 PIN 1 PIN 1 0.65 BSC 0.95 BSC 1.00 0.40 1.10 0.90 0.10 1.90 0.80 1.30 BSC 0.70 1.15 0.90 0.46 0.36 0.30 0.22 1.45 MAX 0.22 SEATING 0.26 0.15 0.08 0.08 PLANE 0.10 COPLANARITY 10° 0.15 MAX 5° 0.50 0.60 SEATING COMPLIANT TO JEDEC STANDARDS MO-203-AA 0° 0.30 PLANE 0.45 0.30 COMPLIANT TO JEDEC STANDARDS MO-178-AA Figure 28. 5-Lead Thin Shrink Small Outline Transistor Package [SC70] Figure 29. 5-Lead Small Outline Transistor Package [SOT-23] (KS-5) (RJ-5) Dimensions shown in millimeters Dimensions shown in millimeters Rev. D | Page 14 of 16 012407-A AD8519/AD8529 ORDERING GUIDE Temperature Model Range Package Description Package Option Branding Information AD8519AKS-REEL7 −40°C to +125°C 5-Lead SC70 KS-5 A3B 1 AD8519AKSZ-REEL7 −40°C to +125°C 5-Lead SC70 KS-5 A11 AD8519ART-REEL −40°C to +125°C 5-Lead SOT-23 RJ-5 A3A AD8519ART-REEL7 −40°C to +125°C 5-Lead SOT-23 RJ-5 A3A 1 AD8519ARTZ-REEL −40°C to +125°C 5-Lead SOT-23 RJ-5 A3A# 1 AD8519ARTZ-REEL7 −40°C to +125°C 5-Lead SOT-23 RJ-5 A3A# AD8519AR −40°C to +125°C 8-Lead SOIC_N R-8 AD8519AR-REEL −40°C to +125°C 8-Lead SOIC_N R-8 AD8519AR-REEL7 −40°C to +125°C 8-Lead SOIC_N R-8 1 AD8519ARZ −40°C to +125°C 8-Lead SOIC_N R-8 AD8519ARZ-REEL −40°C to +125°C 8-Lead SOIC_N R-8 1 AD8519ARZ-REEL7 −40°C to +125°C 8-Lead SOIC_N R-8 AD8529AR −40°C to +125°C 8-Lead SOIC_N R-8 AD8529AR-REEL −40°C to +125°C 8-Lead SOIC_N R-8 1 AD8529ARZ −40°C to +125°C 8-Lead SOIC_N R-8 1 AD8529ARZ-REEL −40°C to +125°C 8-Lead SOIC_N R-8 AD8529ARM-REEL −40°C to +125°C 8-Lead MSOP RM-8 A5A 1 AD8529ARMZ-REEL −40°C to +125°C 8-Lead MSOP RM-8 A5A# 1 Z = RoHS compliant part, # denotes RoHS compliant part may be top or bottom marked. Rev. D | Page 15 of 16 AD8519/AD8529 NOTES ©1998–2007 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. C01756–0–5/07(D) Rev. D | Page 16 of 16