ANALOG DEVICES AD8014

400 MHz Low Power a High Performance Amplifier AD8014 FEATURES FUNCTIONAL BLOCK DIAGRAMS Low Cost SOIC-8 (R) SOT-23-5 (RT) Low Power: 1.15 mA Max for 5 V Supply High Speed 400 MHz, –3 dB Bandwidth (G = +1) AD8014 NC NC 1 8 V 5 +V 1 4000 V/ms Slew Rate OUT S +V –IN 2 7 S 60 ns Overload Recovery –V 2 S +IN V 3 6 Fast Settling Time of 24 ns OUT +IN34 –IN Drive Video Signals on 50 V Lines NC 4 5 –V S AD8014 Very Low Noise 3.5 nV/�Hz and 5 pA/�Hz NC = NO CONNECT 5 nV/�Hz Total Input Referred Noise @ G = +3 w/500 V Feedback Resistor Operates on +4.5 V to +12 V Supplies Low Distortion –70 dB THD @ 5 MHz Low, Temperature-Stable DC Offset Available in SOIC-8 and SOT-23-5 APPLICATIONS Photo-Diode Preamp Professional and Portable Cameras The AD8014 is a very high speed amplifier with 400 MHz, Hand Sets –3 dB bandwidth, 4000 V/ms slew rate, and 24 ns settling time. DVD/CD The AD8014 is a very stable and easy to use amplifier with fast Handheld Instruments overload recovery. The AD8014 has extremely low voltage and A-to-D Driver current noise, as well as low distortion, making it ideal for use Any Power-Sensitive High Speed System in wide-band signal processing applications. For a current feedback amplifier, the AD8014 has extremely low offset voltage and input bias specifications as well as low PRODUCT DESCRIPTION drift. The input bias current into either input is less than 15 mA The AD8014 is a revolutionary current feedback operational at +25°C with a typical drift of less than 50 nA/°C over the amplifier that attains new levels of combined bandwidth, power, industrial temperature range. The offset voltage is 5 mV max output drive and distortion. Analog Devices, Inc. uses a propri- with a typical drift less than 10 mV/°C. etary circuit architecture to enable the highest performance For a low power amplifier, the AD8014 has very good drive amplifier at the lowest power. Not only is it technically superior, capability with the ability to drive 2 V p-p video signals on but is low priced, for use in consumer electronics. This general 75 W or 50 W series terminated lines and still maintain more purpose amplifier is ideal for a wide variety of applications than 135 MHz, 3 dB bandwidth. including battery operated equipment. Rev. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or Tel: 781/329-4700 www.analog.com otherwise under any patent or patent rights of Analog Devices. Fax: © Analog Devices, Inc., (@ T = +258C, V = 65 V, R = 150 V, R = 1 kV, Gain = +2, unless otherwise noted) AD8014–SPECIFICATIONS A S L F AD8014AR/RT Parameter Conditions Min Typ Max Units DYNAMIC PERFORMANCE –3 dB Bandwidth Small Signal G = +1, V = 0.2 V p-p, R = 1 kW400 480 MHz O L = 0.2 V p-p, R = 1 kW120 160 MHz G = –1, V O L = 2 V p-p 140 180 MHz –3 dB Bandwidth Large Signal V O = 2 V p-p, R = 500 W170 210 MHz V O F = 2 V p-p, R = 500 W, R = 50 W130 MHz V O F L = 0.2 V p-p, R = 1 kW12 MHz 0.1 dB Small Signal Bandwidth V O L = 2 V p-p, R = 1 kW20 MHz 0.1 dB Large Signal Bandwidth V O L = 4 V Step R = 1 kW, R = 500 W4600 V/ms Slew Rate, 25% to 75%, V O L F = 1 kW2800 V/ms R L = 1 kW, R = 500 W4000 V/ms G = –1, R L F = 1 kW2500 V/ms G = –1, R L = 2 V Step, R = 1 kW24 ns Settling Time to 0.1% G = +1, V O L Rise and Fall Time 10% to 90% 2 V Step 1.6 ns G = –1, 2 V Step 2.8 ns Overload Recovery to Within 100 mV 0 V to ±4 V Step at Input 60 ns NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion f = 5 MHz, V = 2 V p-p, R = 1 kW–68 dB C O L f = 5 MHz, V = 2 V p-p –51 dB C O f = 20 MHz, V = 2 V p-p –45 dB C O SFDR f = 20 MHz, V = 2 V p-p –48 dB C O Input Voltage Noise f = 10 kHz 3.5 nV/�Hz Input Current Noise f = 10 kHz 5 pA/�Hz Differential Gain Error NTSC, G = +2, R = 500 W0.05 % F NTSC, G = +2, R = 500 W, R = 50 W0.46 % F L Differential Phase Error NTSC, G = +2, R = 500 W0.30 Degree F NTSC, G = +2, R = 500 W, R = 50 W0.60 Degree F L Third Order Intercept f = 10 MHz 22 dBm DC PERFORMANCE Input Offset Voltage 25 mV –T 26 mV T MIN MAX Input Offset Voltage Drift 10mV/°C Input Bias Current +Input or –Input 5 15mA Input Bias Current Drift 50 nA/°C Input Offset Current 5–m A Open Loop Transresistance 800 1300 kW INPUT CHARACTERISTICS Input Resistance +Input 450 kW Input Capacitance +Input 2.3 pF Input Common-Mode Voltage Range ±3.8 ±4.1 V Common-Mode Rejection Ratio V = ±2.5 V –52 –57 dB CM OUTPUT CHARACTERISTICS Output Voltage Swing R = 150 W– 3.4 ±3.8 V L R = 1 kW– 3.6 ±4.0 V L Output Current V = ±2.0 V 40 50 mA O Short Circuit Current 70 mA Capacitive Load Drive for 30% Overshoot 2 V p-p, R = 1 kW, R = 500 W40 pF L F POWER SUPPLY Operating Range ±2.25 ±5 ±6.0 V Quiescent Current 1.15 1.3 mA Power Supply Rejection Ratio ±4 V to ±6 V –55 –58 dB Specifications subject to change without notice. –2– Rev. C AD8014 (@ T = +258C, V = +5 V, R = 150 V, R = 1 kV, Gain = +2, unless otherwise noted) SPECIFICATIONS A S L F AD8014AR/RT Parameter Conditions Min Typ Max Units DYNAMIC PERFORMANCE –3 dB Bandwidth Small Signal G = +1, V = 0.2 V p-p, R = 1 kW345 430 MHz O L = 0.2 V p-p, R = 1 kW100 135 MHz G = –1, V O L = 2 V p-p 75 100 MHz –3 dB Bandwidth Large Signal V O = 2 V p-p, R = 500 W90 115 MHz V O F = 2 V p-p, R = 500 W, R = 75 W100 MHz V O F L = 0.2 V p-p, R = 1 kW10 MHz 0.1 dB Small Signal Bandwidth V O L = 2 V p-p 20 MHz 0.1 dB Large Signal Bandwidth V O = 2 V Step R = 1 kW, R = 500 W3900 V/ms Slew Rate, 25% to 75%, V O L F = 1 kW1100 V/ms R L = 1 kW, R = 500 W1800 V/ms G = –1, R L F = 1 kW1100 V/ms G = –1, R L = 2 V Step, R = 1 kW24 ns Settling Time to 0.1% G = +1, V O F Rise and Fall Time 10% to 90% 2 V Step 1.9 ns G = –1, 2 V Step 2.8 ns Overload Recovery to Within 100 mV 0 V to ±2 V Step at Input 60 ns NOISE/HARMONIC PERFORMANCE Total Harmonic Distortion f = 5 MHz, V = 2 V p-p, R = 1 kW–70 dB C O L f = 5 MHz, V = 2 V p-p –51 dB C O f = 20 MHz, V = 2 V p-p –45 dB C O SFDR f = 20 MHz, V = 2 V p-p –47 dB C O Input Voltage Noise f = 10 kHz 3.5 nV/�Hz Input Current Noise f = 10 kHz 5 pA/�Hz Differential Gain Error NTSC, G = +2, R = 500 W0.06 % F NTSC, G = +2, R = 500 W, R = 50 W0.05 % F L Differential Phase Error NTSC, G = +2, R = 500 W0.03 Degree F NTSC, G = +2, R = 500 W, R = 50 W0.30 Degree F L Third Order Intercept f = 10 MHz 22 dBm DC PERFORMANCE Input Offset Voltage 25 mV –T 26 mV T MIN MAX Input Offset Voltage Drift 10mV/°C Input Bias Current +Input or –Input 5 15mA Input Bias Current Drift 50 nA/°C Input Offset Current 5–m A Open Loop Transresistance 750 1300 kW INPUT CHARACTERISTICS Input Resistance +Input 450 kW Input Capacitance +Input 2.3 pF Input Common-Mode Voltage Range 1.2 1.1 to 3.9 3.8 V Common-Mode Rejection Ratio V = 1.5 V to 3.5 V –52 –57 dB CM OUTPUT CHARACTERISTICS Output Voltage Swing R = 150 W to 2.5 V 1.4 1.1 to 3.9 3.6 V L R = 1 kW to 2.5 V 1.2 0.9 to 4.1 3.8 V L Output Current V = 1.5 V to 3.5 V 30 50 mA O Short Circuit Current 70 mA Capacitive Load Drive for 30% Overshoot 2 V p-p, R = 1 kW, R = 500 W55 pF L F POWER SUPPLY Operating Range 4.5 5 12 V Quiescent Current 1.0 1.15 mA Power Supply Rejection Ratio 4 V to 5.5 V –55 –58 dB Specifications subject to change without notice. –3– Rev. C AD8014 1 ABSOLUTE MAXIMUM RATINGS plastic. This is approximately +150°C. Even temporarily ex- Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.6 V ceeding this limit may cause a shift in parametric performance 2 Internal Power Dissipation due to a change in the stresses exerted on the die by the pack- Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . 0.75 W age. Exceeding a junction temperature of +175°C may result in SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . 0.5 W device failure. Input Voltage Common Mode . . . . . . . . . . . . . . . . . . . . . .±V S The output stage of the AD8014 is designed for large load cur- Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5 V rent capability. As a result, shorting the output to ground or to Output Short Circuit Duration power supply sources may result in a very large power dissipa- . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves tion. To ensure proper operation it is necessary to observe the Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C maximum power derating tables. Operating Temperature Range . . . . . . . . . . . –40°C to +85°C Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . .+300°C Table I. Maximum Power Dissipation vs. Temperature ESD (Human Body Model) . . . . . . . . . . . . . . . . . . . . +1500 V Ambient Temp Power Watts Power Watts NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause perma- 8C SOT-23-5 SOIC nent damage to the device. This is a stress rating only, functional operation of the –40 0.79 1.19 device at these or any other conditions above listed in the operational section of this specification is not implied. Exposure to Absolute Maximum Ratings for any –20 0.71 1.06 extended periods may affect device reliability. 0 0.63 0.94 2 Specification is for device in free air at 25°C. +20 0.54 0.81 8-Lead SOIC Package q= 155°C/W. JA +40 0.46 0.69 5-Lead SOT-23 Package q= 240°C/W. JA +60 0.38 0.56 MAXIMUM POWER DISSIPATION +80 0.29 0.44 +100 0.21 0.31 The maximum power that can be safely dissipated by the AD8014 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily WARNING! accumulate on the human body and test equipment and can discharge without detection. Although the AD8014 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD ESD SENSITIVE DEVICE precautions are recommended to avoid performance degradation or loss of functionality. –4– Rev. C Typical Performance Characteristics– AD8014 15 2.0 G = +1 12 V = 200mV p-p 1.0 O R = 1kV V = 0.2V 9 F O V = 65V S 0 R = 1kV L V = 0.5V O 6 –1.0 3 V = +5V S –2.0 0 V = 1V O –3.0 –3 V = 2V O –4.0 –6 V = 4V V = 65V O S –5.0 –9 G = –1 R = 1kV F –12 –6.0 R = 1kV L –15 –7.0 1 10 100 1000 1 10 100 1000 FREQUENCY – MHz FREQUENCY – MHz Figure 1. Frequency Response, G = +1, V = ±5 V and +5 V S Figure 4. Bandwidth vs. Output Level—Gain of –1, Dual Supply 12 12 9 9 V = 0.5V p-p V = 1V p-p O 6 O 6 3 V = 65V 3 S 0 G = +2 R = 75V L R = 500V F 0 –3 V = 2V p-p O V = 2V p-p O R = 50V –3 L –6 V = +5V S –6 –9 G = +2 R = 1kV F –12 –9 V = 3V p-p O R = 1kV L –15 –12 1 10 100 1000 1 10 100 1000 FREQUENCY – MHz FREQUENCY – MHz Figure 2. Frequency Response, G = +2, V = 2 V p-p Figure 5. Bandwidth vs. Output Level—Single Supply, O G = +2 12 2 1 9 V = 0.5V p-p O V = 0.5V p-p O 0 6 V = 1V p-p O –1 3 –2 V = 4V p-p O –3 0 V = 2V p-p O V = 4V p-p O –4 –3 V = 2V p-p O –5 V = +5V V = 65V S –6 S G = –1 G = +2 –6 R = 1kV R = 1kV F F –9 –7 R = 1kV R = 1kV L L V = 0.2V p-p O –12 –8 10 100 1 10 100 1000 1000 FREQUENCY – MHz FREQUENCY – MHz Figure 6. Bandwidth vs. Output Level—Single Supply, Figure 3. Bandwidth vs. Output Voltage Level— Gain of –1 Dual Supply, G = +2 –5– Rev. C NORMALIZED GAIN – dB NORMALIZED GAIN – dB NORMALIZED GAIN – dB NORMALIZED GAIN – dB NORMALIZED GAIN – dB NORMALIZED GAIN – dB AD8014 7.5 6.2 6.1 7.0 R = 300V F V = 65V S 6.0 R = 500V 6.5 F 5.9 6.0 R = 600V F V = +5V S 5.8 5.5 5.7 R = 750V F 5.0 5.6 4.5 5.5 V = 65V R = 1kV S F G = +2 4.0 G = +2 5.4 V = 2V p-p V = 2V p-p O R = 500V F 3.5 5.3 R = 150V R = 150V L L 3.0 5.2 1 10 100 1000 1 10 100 1000 FREQUENCY – MHz FREQUENCY – MHz Figure 7. Bandwidth vs. Feedback Resistor—Dual Supply Figure 10. Gain Flatness—Large Signal 7.5 9 6 G = +1 7.0 3 6.5 R = 300V 0 F G = +2 6.0 –3 R = 500V F –6 5.5 G = +10 R = 750V F –9 5.0 V = ±5V V = +5V S S R = 1kV F –12 R = 1kV G = +2 F V = 2V p-p 4.5 R = 1kV O L –15 R = 150V V = 200mV p-p L O 4.0 –18 1 10 100 1000 1 10 100 1000 FREQUENCY – MHz FREQUENCY – MHz Figure 8. Bandwidth vs. Feedback Resistor—Single Supply Figure 11. Bandwidth vs. Gain—Dual Supply, R = 1 kWF 6.8 9 G = +2 6.7 R = 1kV 6 G = +1 F 6.6 R = 1kV L 3 6.5 V = 200mV p-p V = 65V O S 6.4 0 V = +5V 6.3 S G = +2 –3 R = 1kV F 6.2 R = 1kV L –6 6.1 V = +5V V = 200mV p-p S O G = +10 6.0 –9 5.9 –12 5.8 –15 5.7 –18 5.6 1 10 100 1000 1 10 100 1000 FREQUENCY – MHz FREQUENCY – MHz Figure 9. Gain Flatness—Small Signal Figure 12. Bandwidth vs. Gain—Single Supply –6– Rev. C NORMALIZED GAIN – dB NORMALIZED GAIN – dB NORMALIZED GAIN – dB GAIN – dB GAIN FLATNESS – dB GAIN – dB AD8014 0 140 0 –10 –40 120 V = 65V S –20 G = +2 PHASE R = 1kV 100 –80 F –30 –PSRR –40 –120 80 +PSRR –50 GAIN 60 –160 –60 40 –200 –70 –80 20 –240 –90 0 –280 1k 10k 100k 1M 10M 100M 1G –100 0.01 0.10 1 10 100 1000 FREQUENCY – Hz FREQUENCY – MHz Figure 16. Transimpedance Gain and Phase vs. Figure 13. PSRR vs. Frequency Frequency 100 –20 –25 –30 10 –35 V = +5V –40 S 1 –45 –50 V = ±5V S 0.1 –55 –60 0.01 –65 –70 0.01 0.1 1 10 100 –75 1000 FREQUENCY – MHz 0.1 1 10 100 1000 FREQUENCY – MHz Figure 17. Output Resistance vs. Frequency, V = ±5 V S Figure 14. CMRR vs. Frequency and +5 V –30 3RD R = 150V L –50 2ND R = 150V 2ND L R = 1kV L –70 ␣␣ 3RD R = 1kV L DISTORTION BELOW NOISE FLOOR –90 1 10 100 FREQUENCY – MHz Figure 18. Settling Time Figure 15. Distortion vs. Frequency; V = ±5 V, G = +2 S –7– Rev. C DISTORTION – dBc CMRR – dB PSRR – dB OUTPUT RESISTANCE – V GAIN – dBV PHASE – Degrees AD8014 Figure 21 shows the circuit that was used to imitate a photo- diode preamp. A photodiode for this application is basically a high impedance current source that is shunted by a small ca- pacitance. In this case, a high voltage pulse from a Picosecond Pulse Labs Generator that is ac-coupled through a 20 kW resis- tor is used to simulate the high impedance current source of a photodiode. This circuit will convert the input voltage pulse into a small charge package that is converted back to a voltage by the AD8014 and the feedback resistor. In this case the feedback resistor chosen was 1.74 kW, which is a compromise between maintaining bandwidth and providing sufficient gain in the preamp stage. The circuit preserves the pulse shape very well with very fast rise time and a minimum of overshoot as shown in Figure 22. Figure 19. Large Signal Step Response; V = ±5 V, S V = 4 V Step O 1.74kV +5V 0.1mF 20kV INPUT 49.9V OUTPUT 49.9V AD8014 (103 PROBE) (NO LOAD) –5V Figure 21. AD8014 as a Photodiode Preamp TEK RUN: 2.0GS/s ET AVERAGE T[ ] INPUT 1 DIV Figure 20. Large Signal Step Response; V = +5 V, S V = 2 V Step O Note: On Figures 19 and 20 R = 500 W, R = 50 W and C = F S L OUTPUT 2 20 pF. 500mV/DIV CH1 20.0V CH2 500mV M 25.0ns CH4 380mV APPLICATIONS Figure 22. Pulse Response CD ROM and DVD Photodiode Preamp High speed Multi-X CD ROM and DVD drives require high frequency photodiode preamps for their read channels. To mini- mize the effects of the photodiode capacitance, the low imped- ance of the inverting input of a current feedback amplifier is advantageous. Good group delay characteristics will preserve the pulse response of these pulses. The AD8014, having many ad- vantages, can make an excellent low cost, low noise, low power, and high bandwidth photodiode preamp for these applications. –8– Rev. C AD8014 Video Drivers DRIVING CAPACITIVE LOADS The AD8014 easily drives series terminated cables with video The AD8014 was designed primarily to drive nonreactive loads. signals. Because the AD8014 has such good output drive you If driving loads with a capacitive component is desired, best can parallel two or three cables driven from the same AD8014. settling response is obtained by the addition of a small series Figure 23 shows the differential gain and phase driving one resistance as shown in Figure 26. The accompanying graph video cable. Figure 24 shows the differential gain and phase shows the optimum value for R vs. Capacitive Load. It is SERIES driving two video cables. Figure 25 shows the differential gain worth noting that the frequency response of the circuit when and phase driving three video cables. driving large capacitive loads will be dominated by the passive roll-off of R and C . SERIES L 0.00 0.02 0.04 0.05 0.05 0.05 0.04 0.04 0.04 0.04 0.03 40 0.10 0.05 0.00 –0.05 30 –0.10 0.00 0.01 0.10 0.21 0.26 0.28 0.29 0.30 0.30 0.30 0.30 0.60 0.40 0.20 0.00 20 –0.20 –0.40 –0.60 1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH Figure 23. Differential Gain and Phase R = 500, ±5 V, R = F L 10 150 W, Driving One Cable, G = +2 01 50152025 C – pF L Figure 26. Driving Capacitive Load 0.00 –0.02 0.03 0.05 0.06 0.06 0.05 0.05 0.07 0.10 0.14 0.30 Choosing Feedback Resistors 0.20 0.10 Changing the feedback resistor can change the performance of 0.00 the AD8014 like any current feedback op amp. The table below –0.10 illustrates common values of the feedback resistor and the per- –0.20 –0.30 formance which results. 0.00 0.07 0.24 0.40 0.43 0.44 0.43 0.40 0.35 0.26 0.16 0.60 0.40 Table II. 0.20 0.00 –3 dB BW –3 dB BW –0.20 = 60.2 V V = 60.2 V –0.40 V O O –0.60 Gain R R R = 1 kV R = 150 V F G L L 1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH +1 1 kWOpen 480 430 Figure 24. Differential Gain and Phase R = 500, ±5 V, R = F L +2 1 kW1 kW280 260 75 W, Driving Two Cables, G = +2 +10 1 kW111 W50 45 –1 1 kW1 kW160 150 0.00 0.44 0.52 0.54 0.52 0.52 0.50 0.48 0.47 0.44 0.45 –2 1 kW499 W140 130 0.80 0.60 –10 1 kW100 W45 40 0.40 +2 2 kW2 kW200* 180* 0.20 0.00 +2 750 W750 W260* 210* –0.20 –0.40 +2 499 W499 W280* 230* –0.60 –0.80 *V = ±1 V. O 0.00 0.10 0.32 0.53 0.57 0.59 0.58 0.56 0.54 0.51 0.48 0.80 0.60 0.40 0.20 0.00 –0.20 –0.40 –0.60 –0.80 1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH Figure 25. Differential Gain and Phase R = 500, ±5 V, R = F L 50 W, Driving Three Cables, G = +2 –9– Rev. C DIFFERENTIAL DIFFERENTIAL DIFFERENTIAL PHASE – Degrees PHASE – Degrees PHASE – Degrees DIFFERENTIAL GAIN – % DIFFERENTIAL GAIN – % DIFFERENTIAL GAIN – % R – V SERIES AD8014 OUTLINE DIMENSIONS 5.00 (0.1968) 4.80 (0.1890) 85 6.20 (0.2441) 4.00 (0.1574) 1 5.80 (0.2284) 3.80 (0.1497) 4 1.27 (0.0500) 0.50 (0.0196) 45° BSC 1.75 (0.0688) 0.25 (0.0099) 1.35 (0.0532) 0.25 (0.0098) 8° 0.10 (0.0040) 0° COPLANARITY 0.51 (0.0201) 1.27 (0.0500) 0.10 0.31 (0.0122) 0.25 (0.0098) SEATING 0.40 (0.0157) 0.17 (0.0067) PLANE COMPLIANT TO JEDEC STANDARDS MS-012-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. Figure 27. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) 3.00 2.90 2.80 5 4 3.00 1.70 2.80 1.60 2.60 1.50 12 3 0.95 BSC 1.90 BSC 1.30 1.15 0.90 0.20 MAX 1.45 MAX 0.08 MIN 0.95 MIN 0.55 0.15 MAX 10° 0.45 SEATING 0.20 0.05 MIN 5° 0.50 MAX 0.35 PLANE BSC 0° 0.35 MIN COMPLIANT TO JEDEC STANDARDS MO-178-AA Figure 28. 5-Lead Small Outline Transistor Package [SOT-23] (RJ-5) Dimensions shown in millimeters ORDERING GUIDE 1 Model Temperature Range Package Description Package Option Branding AD8014AR −40°C to +85°C 8-Lead SOIC_N R-8 AD8014AR -REEL7 −40°C to +85°C 8-Lead SOIC_N R-8 AD8014ARZ −40°C to +85°C 8-Lead SOIC_N R-8 AD8014ARZ-REEL −40°C to +85°C 8-Lead SOIC_N R-8 AD8014ARZ-REEL7 −40°C to +85°C 8-Lead SOIC_N R-8 AD8014ART-R2 −40°C to +85°C 5-Lead SOT-23 RJ-5 HAA AD8014ART-REEL7 −40°C to +85°C 5-Lead SOT-23 RJ-5 HAA AD8014ARTZ-R2 −40°C to +85°C 5-Lead SOT-23 RJ-5 H09 AD8014ARTZ-REEL −40°C to +85°C 5-Lead SOT-23 RJ-5 H09 AD8014ARTZ-REEL7 −40°C to +85°C 5-Lead SOT-23 RJ-5 H09 1 Z = RoHS Compliant Part. -10- Rev. C 012407-A 121608-A AD8014 REVISION HISTORY Changes to Figure 22 ........................................................................ 8 Updated Outline Dimensions ........................................................ 10 Changes to Ordering Guide ........................................................... 10 ©1998–2010 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D08930-0-4/10(C) Rev. C -11-