ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: V =-12V, I = -1.25A CEO C Schottky Diode: V =40V; I = 0.5A R C DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package. SOT23-6 FEATURES • Low Saturation Transistor • High Gain - 300 minimum • Low V , fast switching Schottky F APPLICATIONS • Mobile telecomms, PCMCIA & SCSI • DC-DC Conversion ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXTS1000E6TA 7 8mm embossed 3000 units 8mm embossed ZXTS1000E6TC 13 10000 units Top View DEVICE MARKING 1000 ISSUE 1 - NOVEMBER 2000 1 ZXTS1000E6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Transistor Collector-Base Voltage V -12 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -5 V EBO Continuous Collector Current I -1.25 A C Schottky Diode Continuous Reverse Voltage V 40 V R Forward Current I 0.5 A F Non Repetitive Forward Current t≤100μs I 6.75 A FSM 3 A t≤ 10ms Package Power Dissipation at T =25°C amb single die “on” P 0.725 W D both die “on” 0.885 W Storage Temperature Range T -55 to +150 °C stg Junction Temperature T 125 °C j THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) single die “on” R 138 °C/W θJA both die “on” R 113 °C/W θJA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions ISSUE 1 - NOVEMBER 2000 2 ZXTS1000E6 TRANSISTOR TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB=50 0.3 0.3 IC/IB=10 IC/IB=50 -55°C IC/IB=100 +25°C 0.2 0.2 +100°C +150°C 0.1 0.1 0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 800 1.0 IC/IB=50 VCE=2V 0.8 +100°C 600 0.6 +25°C 400 -55°C 0.4 +25°C +100°C -55°C 200 +150°C 0.2 0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 10 1.0 0.8 1 0.6 DC 1s 100ms 0.4 10ms -55°C 100m 1ms +25°C 100µs +100°C 0.2 +150°C 0 10m 100m 110 100 1m 10m 100m 1 10 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area ISSUE 1 - NOVEMBER 2000 3 VBE(on) - (V) hFE - Typical Gain VCE(sat) - (V) IC - Collector Current (A) VBE(sat) - (V) VCE(sat) - (V) ZXTS1000E6 ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. TRANSISTOR ELECTRICAL CHARACTERISTICS Collector-Base Breakdown V -12 V I = -100μA (BR)CBO C Voltage Collector-Emitter Breakdown V -12 V I = -10mA* (BR)CEO C Voltage Emitter-Base Breakdown Voltage V -5 V I = -100μA (BR)EBO E Collector Cut-Off Current I -10 nA V =-10V CBO CB Emitter Cut-Off Current I -10 nA V =-4V EBO EB Collector Emitter Cut-Off Current I -10 nA V CES =-10V CES Collector-Emitter Saturation V -25 -40 mV I = -0.1A, I = -10mA* CE(sat) C B Voltage -55 -100 mV I = -0.25A, I =-10 mA* C B -110 -175 mV I = -0.5A, I =-10 mA* C B -160 -215 mV I = -1A, I = -50mA* C B -185 -240 mV I = -1.25A, I = -100mA* C B Base-Emitter Saturation Voltage V -990 -1100 mV I = -1.25A, I = -100mA* BE(sat) C B Base-Emitter Turn-On Voltage V -850 -1000 mV I = -1.25A, V =2V* BE(on) CE C Static Forward Current Transfer h 300 490 I = -10mA, V =-2V* FE C CE Ratio 300 450 I = -0.1A, V = -2V* C CE 200 340 I = -0.5A, V = -2V* C CE 125 250 I = -1.25A, V =-2V* C CE 75 140 I = -2A, V = -2V* C CE 30 80 I = -3A, V = -2V* C CE Transition Frequency f 220 MHz I = -50mA, V =-10 V T C CE f= 100MHz Output Capacitance C 15 pF V = -10V, f=1MHz obo CB Turn-On Time t 50 ns V = -10V, I =-1A (on) CC C I =I =-100mA B1 B2 Turn-Off Time t 135 ns (off) SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Reverse Breakdown Voltage V 40 60 V I =200µA (BR)R R Forward Voltage V 270 300 mV I =50mA* F F 300 350 mV I =100mA* F 370 460 mV I =250mA* F 425 550 mV I =500mA* F 550 670 mV I =750mA* F 640 780 mV I =1000mA* F 810 1050 mV I =1500mA* F Reverse Current I 15 40 μA V =30V R R Diode Capacitance C 20 pF f=1MHz,V =30V D R Reverse Recovery Time t 10 ns switched from rr I = 500mA to I = 500mA F R Measured at I = 50mA R *Measured under pulsed conditions. ISSUE 1 - NOVEMBER 2000 4 ZXTS1000E6 DIODE TYPICAL CHARACTERISTICS ISSUE 1 - NOVEMBER 2000 5 ZXTS1000E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e 2 L E1 E DATUM A a e1 D AA2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3701-04 Metroplaza, Tower 1 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong © Zetex plc 2000 Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - NOVEMBER 2000 ISSUE 1 - NOVEMBER 2000 8 C