ZXTDAM832 MPPS™ Miniature Package Power Solutions DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR SUMMARY V =15V; R = 45m ;I = 4.5A CEO SAT C DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) th outline, these new 4 generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels 3mm x 2mm (Dual die) MLP PCB area and device placement savings Lower package height (nom. 0.9mm) C1 C2 Reduced component count FEATURES • Low Equivalent On Resistance B2 B1 • Extremely Low Saturation Voltage (100mV @1A) • h characterised up to 12A FE • I = 4.5A Continuous Collector Current C E2 E1 • 3mm x 2mm MLP APPLICATIONS • DC - DC Converters (FET Drivers) • Charging circuits • Power switches PINOUT • Motor control ORDERING INFORMATION DEVICE REEL TAPE QUANTITY WIDTH PER REEL ZXTDAM832TA 7�� 8mm 3000 ZXTDAM832TC 13�� 8mm 10000 3mm x 2mm MLP DEVICE MARKING underside view DAA ISSUE 1 - JUNE 2002 1 ZXTDAM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 7.5 V EBO Peak Pulse Current I 15 A CM Continuous Collector Current (a)(f) I 4.5 A C Continuous Collector Current (b)(f) I 5.0 A C Base Current I 1000 mA B Power Dissipation at TA=25°C (a)(f) P 1.5 W D 12 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (b)(f) P 2.45 W D 19.6 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (c)(f) P 1 W D 8 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (d)(f) P 1.13 W D 9 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (d)(g) P 1.7 W D 13.6 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (e)(g) P 3 W D 24 mW/°C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 °C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R 83.3 °C/W θJA Junction to Ambient (b)(f) R 51 °C/W θJA Junction to Ambient (c)(f) R 125 °C/W θJA Junction to Ambient (d)(f) R 111 °C/W θJA Junction to Ambient (d)(g) R 73.5 °C/W θJA Junction to Ambient (e)(g) R 41.7 °C/W θJA Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. ISSUE 1 - JUNE 2002 2 ZXTDAM832 TYPICAL CHARACTERISTICS 3.5 V T =25°C CE(SAT) 2oz Cu amb 10 Limited 3.0 Note (e)(g) 2.5 2oz Cu Note (a)(f) 1 DC 2.0 1oz Cu 1s 1.5 Note (d)(g) 100ms 0.1 10ms 1.0 1ms Note (a)(f) 100us 1oz Cu 0.5 0.01 Single Pulse, T =25°C Note (d)(f) amb 0.0 0.1 1 10 0 25 50 75 100 125 150 V Collector-Emitter Voltage (V) Temperature (°C) CE Safe Operating Area Derating Curve 225 Note (a)(f) 80 200 1oz copper 175 Note (f) 1oz copper 60 150 Note (g) 125 D=0.5 40 100 75 Single Pulse 2oz copper D=0.2 20 50 Note (f) D=0.05 2oz copper 25 Note (g) D=0.1 0 0 100µ 1m 10m 100m 1 10 100 1k 0.1 1 10 100 Pulse W idth (s) BoardCuArea(sqcm) Transient Thermal Impedance Thermal Resistance v Board Area 3.5 T =25°C 2oz copper amb 3.0 Note (g) T =150°C jmax Continuous 2.5 2oz copper 2.0 Note (f) 1.5 1.0 1oz copper 1oz copper Note (g) 0.5 Note (f) 0.0 0.1 1 10 100 BoardCuArea(sqcm) Power Dissipation v Board Area ISSUE 1 - JUNE 2002 3 P Dissipation (W ) I Collector Current (A) D Thermal Resistance (°C/W) C Thermal Resistance (°C/W) Max Power Dissipation (W ) ZXTDAM832 ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 40 70 V I =100�A (BR)CBO C Voltage Collector-Emitter Breakdown V 15 18 V I =10mA* (BR)CEO C Voltage Emitter-Base Breakdown Voltage V 7.5 8.2 V I =100�A (BR)EBO E Collector Cut-Off Current I 25 nA V =32V CBO CB Emitter Cut-Off Current I 25 nA V =6V EBO EB Collector Emitter Cut-Off Current I 25 nA V =12V CES CES Collector-Emitter Saturation V 8 14 mV I =0.1A, I =10mA* CE(sat) C B Voltage 70 100 mV I =1A, I =10mA* C B 165 200 mV I =3A, I =50mA* C B 240 280 mV I =4.5A, I =50mA* C B 200 mV I =4.5A, I =100mA* C B Base-Emitter Saturation Voltage V 0.94 1.00 V I =4.5A, I =50mA* BE(sat) C B Base-Emitter Turn-On Voltage V 0.88 0.95 V I =4.5A, V =2V* BE(on) C CE Static Forward Current Transfer h 200 415 I =10mA, V =2V* FE C CE Ratio 300 450 I =0.2A, V =2V* C CE 200 320 I =3A, V =2V* C CE 150 240 I =5A, V =2V* C CE 80 I =12A, V =2V* C CE Transition Frequency f 80 120 MHz I =50mA, V =10V T C CE f=100MHz Output Capacitance C 30 40 pF V =10V, f=1MHz obo CB Turn-On Time t 120 ns V =10V, I =1A (on) CC C I =I =10mA B1 B2 Turn-Off Time t 160 ns (off) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 1 - JUNE 2002 4 ZXTDAM832 TYPICAL CHARACTERISTICS 1 0.25 Tamb=25°C I /I =50 C B 0.20 100m 0.15 100°C I /I =100 C B 25°C 0.10 10m -55°C I /I =50 C B 0.05 I /I =10 C B 1m 0.00 1m 10m 100m 1 10 1m 10m 100m 1 10 I Collector Current (A) I Collector Current (A) C C V vI V vI CE(SAT) C CE(SAT) C 630 V =2V I /I =50 CE 1.0 C B 1.2 540 100°C 1.0 450 0.8 25°C 0.8 360 -55°C 0.6 270 25°C 0.6 -55°C 0.4 180 100°C 0.2 90 0.4 0.0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 I Collector Current (A) I Collector Current (A) C C h vI V vI FE C BE(SAT) C V =2V 1.0 CE 0.8 -55°C 0.6 25°C 0.4 100°C 0.2 1m 10m 100m 1 10 I Collector Current (A) C V vI BE(ON) C ISSUE 1 - JUNE 2002 5 V (V) Normalised Gain V (V) BE(ON) CE(SAT) Typical Gain (h ) FE V (V) V (V) BE(SAT) CE(SAT) ZXTDAM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES INCHES MILLIMETRES INCHES DIM DIM MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 e 0.65 REF 0.0256 BSC A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC 0.118 BSC r 0.075 BSC 0.0029 BSC D2 0.82 1.02 0.032 0.040 � 0� 12� 0� 12� © Zetex plc 2002 Europe Americas Asia Pacific Zetex plc Zetex GmbH Zetex Inc Zetex (Asia) Ltd Fields New Road Streitfeldstraße 19 700 Veterans Memorial Hwy 3701-04 Metroplaza, Tower 1 Chadderton D-81673 München Hauppauge, NY11788 Hing Fong Road Oldham, OL9 8NP Kwai Fong United Kingdom Germany USA Hong Kong Telephone (44) 161 622 4422 Telefon: (49) 89 45 49 49 0 Telephone: (631) 360 2222 Telephone: (852) 26100 611 Fax: (44) 161 622 4420 Fax: (49) 89 45 49 49 49 Fax: (631) 360 8222 Fax: (852) 24250 494 uksales@zetex.com europe.sales@zetex.com usa.sales@zetex.com asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2002 6