ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V =50V; R = 160m ;I = 1A CEO SAT C DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device. FEATURES SOT23-6 • Low Equivalent On Resistance • Low Saturation Voltage C1 C2 • I =1A Continuous Collector Current C • SOT23-6 package B1 B2 APPLICATIONS • LCD Backlighting inverter circuits • Boost functions in DC-DC converters E1 E2 • ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXTD09N50DE6TA 7 8mm embossed 3000 units C1 B1 ZXTD09N50DE6TC 13 8mm embossed 10000 units E1 E2 C2 B2 DEVICE MARKING D619 Top View ISSUE 2 - JUNE 2001 1 ZXTD09N50DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 1.0 A C Base Current I 200 mA B Power Dissipation at TA=25°C (a)(d) P 0.90 W D 7.2 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (a)(e) P 1.1 W D 8.8 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (b)(d) P 1.7 W D 13.6 mW/°C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 °C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R 139 °C/W θJA Junction to Ambient (b)(d) R 73 °C/W θJA Junction to Ambient (a)(e) R 113 °C/W θJA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t�5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. ISSUE 2 - JUNE 2001 2 ZXTD09N50DE6 E6 ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 50 V I = 100µA (BR)CBO C Breakdown Voltage Collector-Emitter V 50 V I = 10mA* (BR)CEO C Breakdown Voltage Emitter-Base Breakdown V 5V I = 100µA (BR)EBO E Voltage Collector Cut-Off Current I 10 nA V = 40V CBO CB Emitter Cut-Off Current I 10 nA V =4V EBO EB Collector Emitter Cut-Off I 10 nA V CES = 40V CES Current Collector-Emitter V 24 35 mV I = 100mA, I = 10mA* CE(sat) C B Saturation Voltage 60 80 mV I = 250mA, I = 10mA* C B 120 200 mV I = 500mA, I = 10mA* C B 160 270 mV I = 1A, I = 50mA* C B Base-Emitter V 940 1100 mV I = 1A, I = 50mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V 850 1100 mV I = 1A, V =2V* BE(on) CE C Voltage Static Forward Current h 200 420 I =10mA, V =2V* FE C CE Transfer 300 450 I = 100mA, V =2 V* C CE Ratio 200 350 I = 500mA, V =2V* C CE 75 130 I = 1A, V =2V* C CE 20 60 I = 1.5A, V =2 V* C CE Transition f 215 MHz I = 50mA, V =10V T C CE Frequency f= 100MHz Output Capacitance C 10 pF V = 10V, f=1MHz obo CB Turn-On Time t 150 ns V =10V,I =1A (on) CC C I =I =100mA B1 B2 Turn-Off Time t 425 ns (off) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤ 2% ISSUE 2 - JUNE 2001 3 ZXTD09N50DE6 TYPICAL CHARACTERISTICS 0.4 0.4 +25°C IC/IB=50 0.3 0.3 IC/IB=10 IC/IB=50 -55°C IC/IB=100 +25°C 0.2 0.2 +100°C +150°C 0.1 0.1 0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC VCE=2V 1.0 IC/IB=50 800 0.8 600 +100°C 0.6 400 +25°C 0.4 -55°C -55°C +25°C +100°C 200 0.2 +150°C 0 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.15 10 0.9 1 0.6 DC 1s -55°C 100m 100ms +25°C 10ms 0.3 +100°C 1ms +150°C 100µs 0 10m 100m 110 100 1m 10m 100m 1 10 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area ISSUE 2 - JUNE 2001 4 VBE(on) - (V) hFE - Typical Gain VCE(sat) - (V) IC - Collector Current (A) VBE(sat) - (V) VCE(sat) - (V) ZXTD09N50DE6 E6 ISSUE 2 - JUNE 2001 5 ZXTD09N50DE6 ISSUE 2 - JUNE 2001 6 ZXTD09N50DE6 E6 ISSUE 2 - JUNE 2001 7 ZXTD09N50DE6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e 2 L E1 E DATUM A a e1 D AA2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 Suite 315 3701-04 Metroplaza, Tower 1 agents and distributors in D-81673 München 700 Veterans Memorial Highway Hing Fong Road, major countries world-wide Germany Hauppauge NY11788 Kwai Fong Zetex plc 2001 USA Hong Kong Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 2 - JUNE 2001 8 C