ZXT13P12DE6 SuperSOT4™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V =-12V; R = 37m ;I = -4A CEO SAT C DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATURES • Extremely Low Equivalent On Resistance • Extremely Low Saturation Voltage • h characterised up to 15A FE • I =4A Continuous Collector Current C • SOT23-6 package APPLICATIONS • DC - DC Converters • Power Management Functions • Power switches • Motor control C C ORDERING INFORMATION C C DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL B E ZXT13P12DE6TA 7 8mm embossed 3000 units Top View ZXT13P12DE6TC 13 8mm embossed 10000 units DEVICE MARKING P12D ISSUE 1 - DECEMBER 1999 1 ZXT13P12DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -7.5 V EBO Peak Pulse Current I -15 A CM Continuous Collector Current I -4 A C Base Current I -500 mA B Power Dissipation at TA=25°C (a) P 1.1 W D 8.8 mW/°C Linear Derating Factor Power Dissipation at TA=25°C (b) P 1.7 W D 13.6 mW/°C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 °C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R 113 °C/W θJA Junction to Ambient (b) R 73 °C/W θJA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t�5 secs. ISSUE 1 - DECEMBER 1999 2 ZXT13P12DE6 TYPICAL CHARACTERISTICS 1.2 10 1.0 0.8 DC 1 1s 0.6 100ms 10ms 0.4 100m 1ms 100µs 0.2 Single Pulse Tamb=25°C 10m 0.0 100m 1 10 0 20 40 60 80 100 120 140 160 V Collector-Emitter Voltage (V) Temperature (°C) CE Safe Operating Area Derating Curve 120 100 80 D=0.5 60 Single Pulse 40 D=0.2 D=0.05 20 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ISSUE 1 - DECEMBER 1999 3 Thermal Resistance (°C/W) I Collector Current (A) C Max Power Dissipation (W) ZXT13P12DE6 ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -20 -33 V I =-100�A (BR)CBO C Voltage Collector-Emitter Breakdown V -12 -25 V I =-10mA* (BR)CEO C Voltage Emitter-Base Breakdown Voltage V -7.5 -8.5 V I =-100�A (BR)EBO E Collector Cut-Off Current I -100 nA V =-16V CBO CB Emitter Cut-Off Current I -100 nA V =-6V EBO EB Collector Emitter Cut-Off Current I -100 nA V =-16V CES CES Collector-Emitter Saturation V -7.5 -10 mV I =-0.1A, I =-10mA* CE(sat) C B Voltage -68 -90 mV I =-1A, I =-10mA* C B -135 -175 mV I =-3A, I =-50mA* C B -200 -250 mV I =-4A, I =-50mA* C B -150 -175 mV I =-4A, I =-400mA* C B Base-Emitter Saturation Voltage V -1.0 V I =-4A, I =-50mA* BE(sat) C B Base-Emitter Turn-On Voltage V -0.9 V I =-4A, V =-2V* BE(on) C CE Static Forward Current Transfer h 300 500 I =-10mA, V =-2V* FE C CE Ratio 300 450 900 I =-1A, V =-2V* C CE 200 300 I =-4A, V =-2V* C CE 20 30 I =-15A, V =-2V* C CE Transition Frequency f 55 MHz I =-50mA, V =-10V T C CE f=50MHz Output Capacitance C 115 pF V =-10V, f=1MHz obo CB Turn-On Time t 70 ns V =-10V, I =-3A (on) CC C I =I =-60mA B1 B2 Turn-Off Time t 265 ns (off) *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% ISSUE 1 - DECEMBER 1999 4 ZXT13P12DE6 TYPICAL CHARACTERISTICS 0.25 Tamb=25°C I /I =50 C B 100m 0.20 100°C 0.15 I /I =100 C B 25°C 10m 0.10 I /I =50 C B 0.05 I /I =10 C B -55°C 1m 0.00 1m 10m 100m 1 10 1m 10m 100m 1 10 I Collector Current (A) I Collector Current (A) C C V vI V vI CE(SAT) C CE(SAT) C 1.6 V =2V I /I =50 CE C B 1.0 1.4 100°C 1.2 -55°C 0.8 1.0 25°C 25°C 0.8 0.6 0.6 0.4 100°C -55°C 0.4 0.2 0.0 1m 10m 100m 1 10 1m 10m 100m 1 10 I Collector Current (A) I Collector Current (A) C C V vI h vI BE(SAT) C FE C V =2V CE 1.0 -55°C 0.8 25°C 0.6 100°C 0.4 1m 10m 100m 1 10 I Collector Current (A) C V vI BE(ON) C ISSUE 1 - DECEMBER 1999 5 V (V) CE(SAT) V (V) Normalised Gain BE(ON) V (V) BE(SAT) V (V) CE(SAT) ZXT13P12DE6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e 2 L E1 E DATUM A a e1 D AA2 A1 DIM Millimetres Inches Min Max Min Max A 0.90 1.45 0.35 0.057 A1 0.00 0.15 0 0.006 A2 0.90 1.30 0.035 0.051 b 0.35 0.50 0.014 0.019 C 0.09 0.20 0.0035 0.008 D 2.80 3.00 0.110 0.118 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.10 0.60 0.004 0.002 e 0.95 REF 0.037 REF e1 1.90 REF 0.074 REF L 0° 10° 0° 10° Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong © Zetex plc 1999 Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. ISSUE 1 - DECEMBER 1999 6 C