ZETEX SEMICONDUCTORS ZDT1053TA
Datasheet
Extracted Text
SM-8 DUAL NPN MEDIUM POWER ZDT1053 ZDT1053 HIGH GAIN TRANSISTORS ISSUE 2 - APRIL 2000 ELECTRICAL CHARACTERISTICS (at T = 25�C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. C 1 B1 Collector-Base V 150 245 V I =100μA (BR)CBO C Breakdown Voltage C 1 E1 Collector-Emitter V 150 245 V C2 B I =100μA 2 CES C Breakdown Voltage C2 E 2 Collector-Emitter V 75 100 V I =10mA CEO SM-8 C Breakdown Voltage PARTMARKING DETAIL � T1053 (8 LEAD SOT223) Collector-Emitter V 150 245 V I =100μA, V =1V CEV C EB Breakdown Voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Emitter-Base V 58.8 V I =100μA (BR)EBO E Breakdown Voltage Collector-Base Voltage V 150 V CBO Collector-Emitter Voltage V 75 V CEO Collector Cutoff Current I 0.3 10 nA V =120V CBO CB Emitter-Base Voltage V 5V EBO Emitter Cutoff Current I 0.3 10 nA V =4V EBO EB Peak Pulse Current I 20 A CM Collector Emitter Cutoff I 0.3 10 nA V =120V CES CES Continuous Collector Current I 5A C Current Base Current I 500 mA B Collector-Emitter Saturation V 17 25 mV I =0.2A, I =20mA* CE(sat) C B Operating and Storage Temperature Range T :T -55 to +150 �C j stg Voltage 70 100 mV I =1A, I =50mA* C B 120 150 mV I =1A, I =10mA* C B THERMAL CHARACTERISTICS 150 200 mV I =2A, I =50mA* C B 300 350 mV I =5A, I =250mA* C B PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25�C* P Base-Emitter V 1100 1200 mV I =5A, I =250mA* amb tot BE(sat) C B Any single die �on� 2.25 W Saturation Voltage Both die �on� equally 2.75 W Base-Emitter Turn-On V 1000 1100 mV I =5A, V =2V* BE(on) C CE Derate above 25�C* Voltage Any single die �on� 18 mW/ �C Both die �on� equally 22 mW/ �C Static Forward Current h 260 420 I =10mA, V =2V* FE C CE Transfer Ratio 300 450 1200 I =1A, V =2V* C CE Thermal Resistance - Junction to Ambient* 150 220 I =2A, V =2V* C CE Any single die �on� 55.6 �C/ W 30 50 I =5A, V =2V* C CE Both die �on� equally 45.5 �C/ W 15 I =10A, V =2V* C CE * The power which can be dissipated assuming the device is mounted in a typical manner Transition Frequency f 140 MHz I =50mA, V =10V on a PCB with copper equal to 2 inches square. T C CE f=100MHz Output Capacitance C 21 30 pF V =10V, f=1MHz obo CB t 90 ns I =2A, I =20mA, V =50V on C B CC Switching Times t 750 ns I =2A, I =±20mA, V =50V off C B CC *Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2% 3 - 363 3 - 364 SM-8 DUAL NPN MEDIUM POWER ZDT1053 ZDT1053 HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ELECTRICAL CHARACTERISTICS (at T = 25�C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. C 1 B1 Collector-Base V 150 245 V I =100μA (BR)CBO C Breakdown Voltage C 1 E1 Collector-Emitter V 150 245 V C2 B I =100μA 2 CES C Breakdown Voltage C2 E 2 Collector-Emitter V 75 100 V I =10mA CEO SM-8 C Breakdown Voltage PARTMARKING DETAIL � T1053 (8 LEAD SOT223) Collector-Emitter V 150 245 V I =100μA, V =1V CEV C EB Breakdown Voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Emitter-Base V 58.8 V I =100μA (BR)EBO E Breakdown Voltage Collector-Base Voltage V 150 V CBO Collector-Emitter Voltage V 75 V CEO Collector Cutoff Current I 0.3 10 nA V =120V CBO CB Emitter-Base Voltage V 5V EBO Emitter Cutoff Current I 0.3 10 nA V =4V EBO EB Peak Pulse Current I 20 A CM Collector Emitter Cutoff I 0.3 10 nA V =120V CES CES Continuous Collector Current I 5A C Current Base Current I 500 mA B Collector-Emitter Saturation V 17 25 mV I =0.2A, I =20mA* CE(sat) C B Operating and Storage Temperature Range T :T -55 to +150 �C j stg Voltage 70 100 mV I =1A, I =50mA* C B 120 150 mV I =1A, I =10mA* C B THERMAL CHARACTERISTICS 150 200 mV I =2A, I =50mA* C B 300 440 mV I =5A, I =250mA* C B PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at T = 25�C* P Base-Emitter V 1100 1200 mV I =5A, I =250mA* amb tot BE(sat) C B Any single die �on� 2.25 W Saturation Voltage Both die �on� equally 2.75 W Base-Emitter Turn-On V 1000 1100 mV I =5A, V =2V* BE(on) C CE Derate above 25�C* Voltage Any single die �on� 18 mW/ �C Both die �on� equally 22 mW/ �C Static Forward Current h 260 420 I =10mA, V =2V* FE C CE Transfer Ratio 300 450 1200 I =1A, V =2V* C CE Thermal Resistance - Junction to Ambient* 150 220 I =2A, V =2V* C CE Any single die �on� 55.6 �C/ W 30 50 I =5A, V =2V* C CE Both die �on� equally 45.5 �C/ W 15 I =10A, V =2V* C CE * The power which can be dissipated assuming the device is mounted in a typical manner Transition Frequency f 140 MHz I =50mA, V =10V on a PCB with copper equal to 2 inches square. T C CE f=100MHz Output Capacitance C 21 30 pF V =10V, f=1MHz obo CB t 90 ns I =2A, I =20mA, V =50V on C B CC Switching Times t 750 ns I =2A, I =±20mA, V =50V off C B CC *Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2% 3 - 363 3 - 364 175 100 25C -55 CE 175C 100 55C 25 -55 25C 100C CE +CC+C+ BB CC ++- BBB CCC +C+C+C ZDT1053 TYPICAL CHARACTERISTICS 0.8 0.8 +25�C I /I =30 0.6 0.6 -55°C +25°C I /I =10 +100°C I /I =30 +175°C 0.4 I /I =100 0.4 0.2 0.2 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 1.0 I /I =30 700 V =2V 600 0.8 500 0.6 400 300 0.4 200 0.2 100 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A IC-Collector Current IC-Collector Current VBE(sat) v Ic hFE v IC 1.2 V =2V 1.0 0.8 0.6 0.4 0.2 1mA 10mA 100mA 1A 10A I -Collector Current C VBE(on) v IC 3 - 365
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One of our top priorities is maintaining our business with precision, and we are constantly looking for affiliates that can help us achieve our goal. With the aid of GID Industrial, our obsolete product management has never been more efficient. They have been a great resource to our company, and have quickly become a go-to supplier on our list!
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Applied Materials
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When I can't find an obsolete part, I first call GID and they'll come up with my parts every time. Great customer service and follow up as well. Scott emails me from time to time to touch base and see if we're having trouble finding something.....which is often with our 25 yr old equipment.
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