2SK2549 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2549 DC−DC Converter, Relay Drive and Motor Drive Unit: mm Applications ��2.5 V gate drive ��Low drain−source ON resistance : R = 0.29 Ω (typ.) DS (ON) ��High forward transfer admittance : |Y | = 3.0 S (typ.) fs ��Low leakage current : I = 100 µA (max) (V = 16 V) DSS DS ��Enhancement−mode : V = 0.5~1.1 V (V = 10 V, I = 200 µA) th DS D Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 16 V DSS Drain−gate voltage (R = 20 kΩ) V 16 V GS DGR Gate−source voltage V ±8 V GSS DC (Note 1) I 2 D Drain current A Pulse (Note 1) I 6 DP Drain power dissipation P 0.5 W D JEDEC ― Drain power dissipation (Note 2) P 1.5 W D JEITA ― Channel temperature T 150 °C ch TOSHIBA 2-5K1B Storage temperature range T −55~150 °C stg Weight: 0.05 g (typ.) Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Marking Thermal Characteristics Z 7 Characteristics Symbol Max Unit Thermal resistance, channel to R 250 °C / W th (ch−a) ambient (The two digits represent the part number.) This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 2SK2549 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = ±6.5 V, V = 0 V — — ±10 µA GSS GS DS Drain cut−off current I V = 16 V, V = 0 V — — 100 µA DSS DS GS Drain−source breakdown voltage V I = 10 mA, V = 0 V 16 — — V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 200 µA 0.5 — 1.1 V th DS D V = 2.5 V, I = 0.5 A — 0.29 0.38 GS D Drain−source ON resistance R Ω DS (ON) V = 4 V, I = 1 A — 0.22 0.29 GS D Forward transfer admittance |Y| V = 10 V, I = 1 A 1.5 3.0 — S fs DS D Input capacitance C — 260 — iss Reverse transfer capacitance C — V = 10 V, V = 0 V, f = 1 MHz 34 — pF rss DS GS Output capacitance C — 103 — oss Rise time t — 200 — r Turn−on time t — 250 — on Switching time ns Fall time t — 300 — f Turn−off time t — 800 — off Total gate charge (Gate−source Q — 5.0 — g plus gate−drain) V ≈ 16 V, V = 5 V, I = 2 A nC DD GS D Gate−source charge Q — 3.2 — gs Gate−drain (“miller”) charge Q — 1.8 — gd Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I — — — 2 A DR (Note 1) Pulse drain reverse current I — — — 6 A DRP (Note 1) Forward voltage (diode) V I = 2 A, V = 0 V — — −1.7 V DSF DR GS Reverse recovery time t — 220 — ns rr I = 2 A, V = 0 V DR GS dI / dt = 50 A / µs DR Reverse recovered charge Q — 0.32 — µC rr 2 2002-08-09 2SK2549 3 2002-08-09 2SK2549 4 2002-08-09 2SK2549 5 2002-08-09 2SK2549 RESTRICTIONS ON PRODUCT USE 000707EAA �� TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. �� The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. �� The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. �� The information contained herein is subject to change without notice. 6 2002-08-09