SGA-6489 Product Description RoHS Compliant Pb SGA-6489Z & GreenPackage DC-3500 MHz, Cascadable The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters SiGe HBT MMIC Amplifier provides high F and excellent thermal perfomance. The T heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Product Features The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and • Now available in Lead Free, RoHS is RoHS compliant per EU Directive 2002/95. This package Compliant, & Green Packaging is also manufactured with green molding compounds that • High Gain : 17.5 dB at 1950 MHz contain no antimony trioxide nor halogenated fire retardants. • Cascadable 50 Ohm Gain & Return Loss vs. Frequency • Operates From Single Supply V = 5.1 V, I = 75 mA (Typ.) D D • Low Thermal Resistance Package 24 0 GAIN 18 -10 Applications ORL • PA Driver Amplifier 12 -20 • Cellular, PCS, GSM, UMTS IRL 6 -30 • IF Amplifier • Wireless Data, Satellite 0 -40 0 1 23 45 Frequency (GHz) Symbol Parameter Units Frequency Min. Typ. Max. 850 M Hz 18.4 20.1 22.4 G Small Signal G ain dB 1950 M Hz 17.5 2400 M Hz 16.5 850 M Hz 20.7 P O utput Pow er at 1dB Compression dBm 1dB 1950 M Hz 18.7 850 M Hz 34.0 O utput Third O rder Intercept Point dBm OIP 3 1950 M Hz 32.0 Bandw idth Determined by Return Loss (>10dB) M Hz 3500 IRL Input Return Loss dB 1950 M Hz 14.4 O RL O utput Return Loss dB 1950 M Hz 10.9 NF Noise Figure dB 1950 M Hz 3.0 Device O perating Voltage V 4.7 5.1 5.5 V D Device O perating Current mA 67 75 83 I D Thermal Resistance (junction to lead) °C/W 97 R , j-l TH V = 8 V I = 75 mA Typ. OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm S D 3 Test Conditions: R = 39 Ohms T = 25ºC Z = Z = 50 Ohms BIAS L S L The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100621 Rev. G 1 Gain (dB) Return Loss (dB) SGA-6489 DC-3500 GHz Cascadable MMIC Amplifier Preliminary Typical RF Performance at Key Operating Frequencies Frequency (MHz) Frequency (MHz) Frequency (MHz) Symbol Parameter Unit 100 500 850 1950 2400 3500 G Small Signal Gain dB 21.0 20.8 20.1 17.5 16.5 14.0 OIP Output Third Order Intercept Point dBm 35.0 34.5 34.0 32.0 30.1 25.0 3 P Output Power at 1dB Compression dBm 20.6 20.9 20.7 18.7 17.4 14.0 1dB IRL Input Return Loss dB 29.4 30.8 24.7 14.4 12.5 10.8 ORL Output Return Loss dB 18.7 16.3 14.6 10.9 10.9 10.0 S Reverse Isolation dB 23.9 23.8 23.9 22.2 21.4 19.3 12 NF Noise Figure dB 3.2 2.8 2.7 3.0 3.4 4.4 V = 8 V I = 75 mA Typ. OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm V = 8 V I = 80 mA Typ. OIP Tone Spacing = 1 MHz, Pout per tone = 0 dBm S S D D 3 3 Test Conditions: Test Conditions: R R = 39 Ohms = 39 Ohms T T = 25ºC = 25ºC Z Z = Z = Z = 50 Ohms = 50 Ohms BIAS L S L BIAS L S L Absolute Maximum Ratings Parameter Absolute Limit Noise Figure vs. Frequency V =5.1 V, I = 75 mA Max. Device Current (I ) 150 mA D D D Max. Device Voltage (V )7 V 5 D Max. RF Input Power +18 dBm 4 Max. Junction Temp. (T ) +150°C J Operating Temp. Range (T ) -40°C to +85°C L 3 Max. Storage Temp. +150°C 2 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, T =+25ºC L the device voltage and current must not exceed the maximum 1 operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: 0 I V < (T - T ) / R , j-l D D J L TH 01 2 3 4 Take into account out of band VSWR presented by devices such as SAW filters to determine maximum RF input power. Frequency (GHz) Reflected harmonic levels in saturation are significant. OIP vs. Frequency P vs. Frequency 3 1dB V = 5.1 V, I = 75 mA V = 5.1 V, I = 75 mA D D D D 40 22 36 20 32 18 28 16 +25°C +25°C T 24 -40°C 14 -40°C T L L +85°C +85°C 20 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Frequency (GHz) 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100621 Rev. G 2 OIP (dBm) 3 Noise Figure (dB) P (dBm) 1dB SGA-6489 DC-3500 GHz Cascadable MMIC Amplifier Preliminary |S | vs. Frequency |S | vs. Frequency 21 11 V = 5.1 V, I = 75 mA V = 5.1 V, I = 75 mA D D D D 0 24 18 -10 12 -20 6 -30 +25°C +25°C -40°C -40°C T T L L +85°C +85°C 0 -40 0123456 01 2 345 Frequency (GHz) Frequency (GHz) |S | vs. Frequency |S | vs. Frequency 12 22 V = 5.1 V, I = 75 mA V = 5.1 V, I = 75 mA D D D D -12 0 -15 -10 -18 -20 -21 +25°C -30 +25°C T -40°C -24 L T -40°C +85°C L +85°C -40 -27 012 345 0 1 23 45 Frequency (GHz) Frequency (GHz) V vs. I over Temperature for fixed D D V vs. Temperature for Constant I = 75 mA D D V = 8 V, R = 39 ohms * S BIAS 90 5.7 85 5.5 +85°C 80 5.3 +25°C 75 5.1 70 -40°C 4.9 65 60 4.7 4.7 4.9 5.1 5.3 5.5 -40 -15 10 35 60 85 V (Volts) Temperature(°C) D * Note: In the applications circuit on page 4, R compensates for voltage and current variation over temperature. BIAS 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100621 Rev. G 3 I (mA) D |S12| (dB) |S | (dB) 21 V (Volts) D |S | (dB) |S | (dB) 22 11 SGA-6489 DC-3500 GHz Cascadable MMIC Amplifier Preliminary Basic Application Circuit Application Circuit Element Values R BIAS Frequency (Mhz) V S Reference Designator 500 850 1950 2400 3500 1 uF 1000 C C 220 pF 100 pF 68 pF 56 pF 39 pF D B pF C 100 pF 68 pF 22 pF 22 pF 15 pF D L C L 68 nH 33 nH 22 nH 18 nH 15 nH C 4 1 3 Recommended Bias Resistor Values for I =75mA SGA-6489 RF in RF out D R =( V -V ) / I BIAS S D D C 2 C B B Supply Voltage(V ) 6 V 8 V 10 V 12 V S R 12 39 62 91 BIAS Note: R provides DC bias stability over temperature. BIAS V S 1 uF R BIAS Mounting Instructions 1000 pF C D 1. Solder the copper pad on the backside of the A64 L C device package to the ground plane. 2. Use a large ground pad area with many plated C C B B through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Pin # Function Description Part Identification Marking RF input pin. This pin requires the use of an 1 RF IN external DC blocking capacitor chosen for 4 4 the frequency of operation. Connection to ground. For optimum RF A64 A64Z performance, use via holes as close to 2, 4 GND ground leads as possible to reduce lead inductance. 12 3 12 3 RF OUT/ RF output and bias pin. DC voltage is 3 BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Reel Size Devices/Reel SGA-6489 13" 3000 SGA-6489Z 13" 3000 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100621 Rev. G 4 1 2 3 1 2 3 SGA-6489 DC-3500 GHz Cascadable MMIC Amplifier Suggested PCB Pad Layout Dimensions in inches [millimeters] Preliminary Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances Package Type: SOT- 89 Bottom View 303 Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-100621 Rev. G 5