SMP50N06-25 N-Channel Enhancement-Mode MOSFET, 25-m
r DS(on) Product Summary V (V) r (
) I (A) (BR)DSS DS(on) D 60 0.025 50 D TO-220AB G DRAIN connected to TAB GD S S Top View N-Channel MOSFET Absolute Maximum Ratings (T = 25
C Unless Otherwise Noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 60 DS V V Gate-Source Voltage V
20 GS T = 25
C 50 C Continuous Continuous Drain Drain Current Current (T (T = = 175 175

C) C) I I J J D D T = 100
C 35 C Pulsed Drain Current I 130 A DM Continuous Source Current (Diode Conduction) I 50 S Avalanche Current I 50 AR Avalanche Energy L = 0.1 mH E 125 AS mJ mJ a Repetitive Avalanche Energy L = 0.05 mH E 62.5 AR T = 25
C 131 C Maximum Maximum Power Power Dissipation Dissipation P P W W D D T = 100
C 65 C Operating Junction and Storage Temperature Range T , T –55 to 175 J stg

C C 1 Lead Temperature ( / ” from case for 10 sec.) T 300 16 L Thermal Resistance Ratings Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient R 80 thJA Maximum Junction-to-Case R 1.14
C/W thJC Case-to-Sink R 1.0 thCS Notes: a. Duty cycle  1% Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70279. Siliconix 1 P-38492—Rev. G, 05-Sep-94 SMP50N06-25 Specifications (T = 25
C Unless Otherwise Noted) J a Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 �A 60 (BR)DSS GS D V V Gate Threshold Voltage V V = V , I = 1�mA 2 4 GS(th) DS GS D V = 0 V, V = �20 V Gate-Body Leakage I �500 nA GSS DS GS V = 48 V, V = 0 V 25 DS GS Zero Gate Voltage Drain Current I V = 48 V, V = 0 V, T = 125
C 250 �A DSS DS GS J V = 48 V, V = 0 V, T = 175
C 500 DS GS J b On-State Drain Current I V = 10 V, V = 10 V 50 A D(on) DS GS V = 10 V, I = 25 A 0.020 0.025 GS D b b Drain-Source On-State Resistance r V = 10 V, I = 25 A, T = 125
C 0.033 0.042 � � DS(on) GS D J V = 10 V, I = 25 A, T = 175
C 0.043 0.0525 GS D J b Forward Transconductance g V = 15 V, I = 25 A 20 S fs DS D Dynamic Input Capacitance C 2000 iss Output Capacitance C V = 0 V, V = 25 V, f = 1 MHz 570 oss GS DS Reverse Transfer Capacitance C 120 rss nC nC Total Gate Charge Q 55 80 g Gate-Source Charge Q V = 30 V, V = 10 V, I = 50 A 9 15 DS GS D gs Gate-Drain Charge Q 24 40 gd Turn-On Delay Time t 15 30 d(on) Rise Time t 20 35 r V = 30 V,, R = 0.6 � � DD DD L L ns ns I5I � 50 A, V 0AV = 10 V10V, RR = 2.5 25� � D GEN G Turn-Off Delay Time t 40 65 d(off) Fall Time t 15 30 f Source-Drain Diode Ratings and Characteristics b Diode Forward Voltage V I = 50 A, V = 0 V 2.0 V SD F GS Reverse Recovery Time t 130 ns rr Peak Reverse Recovery Current I I = 50 A, di/dt = 100 A/�s 10 A RM(rec) F Reverse Recovery Charge Q 0.7 �C rr Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width �300 �s, duty cycle �2%. 2 Siliconix P-38492—Rev. G, 05-Sep-94 SMP50N06-25 Typical Characteristics (25
C Unless Otherwise Noted) Output Characteristics Transfer Characteristics 100 50 V = 10, 9, 8 V GS 7 V 80 40 6 V 60 30 40 20 5 V T = 125
C C 20 10 3 V 25
C 4 V –55
C 0 0 02468 10 0 246 8 10 V – Drain-to-Source Voltage (V) V – Gate-to-Source Voltage (V) DS GS Transconductance On-Resistance vs. Drain Current 0.030 30 T = –55
C 25 J 0.025 V = 10 V GS 25
C 20 0.020 125
C V = 20 V 15 GS 0.015 10 0.010 5 0.005 0 0 20406080 0 1020 3040 50 V – Gate-to-Source Voltage (V) GS I – Drain Current (A) D Capacitance Gate Charge 10 4000 V = 30 V DS 8 I = 50 A D 3000 6 C iss 2000 4 C oss 1000 2 C rss 0 0 0 102030 40 50 010 20 30 40 5055 V – Drain-to-Source Voltage (V) Q – Total Gate Charge (nC) DS g Siliconix 3 P-38492—Rev. G, 05-Sep-94 C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A) fs D V – Gate-to-Source Voltage (V) r – On-Resistance (
) I – Drain Current (A) GS DS(on) D SMP50N06-25 Typical Characteristics (25
C Unless Otherwise Noted) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 2.4 I = 25 A D 2.2 T = 125
C J 2.0 1.8 1.6 10 T = 25
C J 1.4 1.2 1.0 0.8 V = 10 V GS 1 0.6 –20 –40 0 40 80 120 160 200 0.5 0.7 0.9 1.1 1.3 T – Junction Temperature (
C) V – Source-to-Drain Voltage (V) J SD Thermal Ratings Maximum Avalanche and Drain Current Safe Operating Area vs. Case Temperature 300 60 100 100 �s 50 Limited 40 by r DS(on) 1 ms 10 30 10 ms 100 ms, dc 20 1 T = 25
C C Single Pulse 10 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 T – Case Temperature (
C) V – Drain-to-Source Voltage (V) C DS Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –5 –4 –3 –2 –1 10 10 10 10 10 1 3 Square Wave Pulse Duration (sec) 4 Siliconix P-38492—Rev. G, 05-Sep-94 r – On-Resistance ( � ) Normalized Effective Transient DS(on) I – Drain Current (A) D Thermal Impedance (Normalized) I – Drain Current (A) D I – Source Current (A) S