SEMTECH SC2608B

SC2608B Simple, Synchronous Voltage Mode PWM Controller POWER MANAGEMENT Draft Description Features ‹ +5V or +12V input voltage The SC2608B is a versatile voltage-mode PWM control- ler designed for use in step down DC/DC power supply ‹ 250kHz operation applications. A simple, fixed frequency, highly efficient ‹ High efficiency (>90%) buck regulator can be implemented using the SC2608B ‹ 1.25% Voltage feedback accuracy over tempera- with minimal external components. The input voltage ture range is from +5V to +12V. Internal level shift and drive ‹ Hiccup mode over current protection circuitry eliminates the need for an expensive P-channel, ‹ 1.2A output drive high-side MOSFET. The small device footprint allows for ‹ R Current sensing for protection DS(ON) compact circuit design. ‹ Industrial temperature range ‹ Available in SO-8 and SO-8 EDP package SC2608B features include temperature compensated ‹ Integrated boot strap diode voltage reference, triangle wave oscillator, current limit ‹ Thermal Shut down comparator, and an externally compensated error ampli- fier. Current limit is implemented by sensing the voltage ‹ Fully WEEE and RoHS Compliant drop across the bottom MOSFET R . DS(ON) Applications The SC2608B operates at a fixed frequency of 250kHz providing an optimum compromise between efficiency , ‹ Termination supplies external component size, and cost. ‹ Low cost microprocessor supplies ‹ Peripheral card supplies SC2608B has a thermal protection circuit, which is ‹ Industrial power supplies O activated if the junction temperature exceeds 150 C. ‹ High density DC/DC conversion Typical Application Circuit Figure 1 1 Revision 4: Jan. 2007 www.semtech.com SC2608B POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. P P Pr Pr Pa a aa arrrrra a aa am m m m me e ee ettttte e ee errr S S Sl Sl Sm yyyyym m m m mb b b b bo o oo olll M M Mm Ms Mm a a aa axxxxxiiiiim m m m mu u u u um m U U Us U Us n n n n niiiiitttttss V to GND +V 20 CC BST to PHASE +V 15 BST to GND +V 20 (note1) PHASE to GND -V 1 to +24 (note1) DH to PHASE +V 15 (note2) DL to GND -V 1 to +15 COMP/SS to GND +V 7 SENSE to GND +V 7 O Thermal Resistance Junction to Case (SO-8) θ 40 C/W JC O Thermal Resistance Junction to Case (SOIC - 8L EDP) θ 5.5 C/W JC O Thermal Resistance Junction to Ambient (SO-8) θ 120 C/W JA O Thermal Resistance Junction to Ambient (SOIC - 8L EDP) θ 36.5 C/W JA O Operating Temperature Range T -40 to +125 C J O ST torage Temperature Range -65 to +150 C STG ESD Rating (Human Body Model) E4 SD kV Note 1: Under pulsing condition, the peak negative voltage can not be lower than -3.6V with less than 20nS from 50% to 50%. Note 2: Under pulsing condition, the peak negative voltage can not be lower than -5V with less than 20nS from 50% to 50%. Electrical Characteristics o Unless specified: V = 12V, V - V = 12 V, V = 3.3V, T = T = 25 C. CC BST Phase OUT J A P P Pr Pr Pl a a aa arrrrra a aa am m m m me e ee ettttte e ee errr Sl S S Ss Sl yyyyym m m m mb b b b bo o oo oll C C Cs Cs Cn o o oo on n n n nd d d d diiiiitttttiiiiio o oo on n n n nss Mn M M Mp Mn iiiiin n TTTp Tp Tx yyyyyp p M M Mx Mx Ms a a aa axx U U Us U Us n n n n niiiiitttttss Py P P P Py o o oo ow w w w we e ee errrrr S S S S Su u u u up p p p pp p p p plllllyyy SV upply Voltage 44 1V CC SI upply Current V <6 0.4V 6A .5 m CC COMP Ut U U U Ut n n n n nd d d d de e ee errrrr vvvvvo o oo olllllttttta a aa aggggge e ee e LLLLLo o oo occccckkkkko o oo ou u u u uttt O UV VLO Threshold 0< T < 85 C5 35 .7 3V .8 th J HV ysteresis 8V 0 m hys Er E E E Er rrrrrrrrrro o oo orrrrr A A A A Am m m m mp p p p pllllliiiiifffffiiiiie e ee errr FV eedback Voltage 4.5V 0.9V; V=0 2.1V -A 80 u SINK SENSE COMP OI utput Source Current V < 0.7V; V=0 2.1V 1A 2 u SOURCE SENSE COMP Or O O OOr s s s s sc c c c ciiiiilllllllllla a a a at t t t to o o o or r r SF witching Frequency V5 cc =12V 20 2 25 5 2z 7 kH OSC RV amp Peak Voltage 4.75V < V<8 12.6V 1V . P-K CC RV amp Valley Voltage 4.75V < V<8 12.6V 0V . V CC MD aximum Duty Cycle 8% 5 MAX Ms M M MMs O O O O OS S S S SF F F F FE E E E ET T T T T D D D D Dr r r r riiiiiv v v v ve e e e er r r r rs s s DI H Sink/Source Current t > 400nS 1A .2 DH PW V = 4.5V (src) GS DI L Sink/Source Current 1.2 V = 2.5V (snk) DL GS A Df H Rise/Fall Time tC r, t=0 3000pF, See Fig. 2 5s n L Df L Rise/Fall Time tC r, t=0 4000pF, See Fig. 2 5s n L Dt ead Time S5 ee Fig. 2 6s n dt Dt L Minimum On Time 40 .75V < Vcc < 12.6V 4s 4 n ON CCt CCt Cu u u u ur r r r rr r r r re e e e en n n n nt t t t t L L L L Liiiiim m m m miiiiit t t TV rip Voltage 4< .75V V< cc 12.6V -0 575-5 50 -V 42 m TRIP V = V - GND trip PHASE St S SSt o o o of f f ft t t t----S S S St t t ta a a ar r r rt t Soft-Start SI S Source Current V<4 2.5V uA SRC COMP SI S Sink Current V>4 0.5V -A u SNK COMP TTn TTn Th h h h he e e e er r r r rm m m m ma a a a alllll S S S S Sh h h h hu u u u ut t t t td d d d do o o o ow w w w wn n n o OT ver Temperature Trip Point 150 C OTP 3 www.semtech.com © 2007 Semtech Corp. SC2608B POWER MANAGEMENT Pin Configuration Ordering information Top View (1) Device Package (2) SC2608BSTRT SO-8 BST BST 1 1 8 8 PH PHAS ASE E (2) SC2608BSETRT SOIC-8L EDP DH DH 2 2 7 7 CO COM MP P/SS /SS Sd C2608BEVB Evaluation Boar Notes: GN GND D 3 3 6 6 SEN SENS SE E (1) Only available in tape and reel packaging. A reel con- tains 2500 devices. DL DL 4 4 5 5 VC VCC C (2) This device is fully WEEE and RoHS Compliant (8-Pin SO-8) Top View BST BST 1 1 8 8 PHASE PHASE DH DH 2 2 7 7 COMP/SS COMP/SS GND GND 3 3 6 6 SE SENSE NSE DL DL 4 4 5 5 VCC VCC (8-Pin SOIC-8L EDP) Pin Descriptions P P Pn Pn Piiiiin n n P P Pe Pe Pn iiiiin n n n n N N N N Na a a a am m m m me ee Pn P P P Pn iiiiin n n n n F F FF Fu u u u un n n n nccccctttttiiiiio o oo on n # # # # # 1T B. S Bootstrap for high side driver 2H D. High side driver output 3D G. N Ground 4L D. Low side driver output 5C V. C Chip bias supply pin 6e S. ens Output voltage sense input Error amplifier output. Connect compensation network to GND. The compensation capacitor COMP/SS 7 serves as soft start capacitor. By pulling this pin low will disable the output. 8E PHAS Connect this pin to the switching node between the MOSFETs. Pad for heatsinking purposes. Connect to ground plane using multiple vias. Not connected Thermal Pad internally. 4 www.semtech.com © 2007 Semtech Corp. SC2608B POWER MANAGEMENT Gate Drive Timing Diagram Figure 2 Block Diagram VC VCC C BS BST T LE LEV VE EL L DH DH OS OSC C SH SHIIF FT T S S RE REF F PH PHAS ASE E 0. 0.8V 8V NO NON- N-O OV VE ER RLA LAP P RQ RQ TIM TIMIIN NG G E/ E/A A ++ 0 0 PW PWM M VC VCC C -- Vc Vcc c SE SEN NS SE E OC OCP P & & UV UVLO LO DL DL GND GND OC OCP P PH PHASE ASE 0 0 0 0 + + -- 0 0 CO COM MP P/ /S SS S Figure 3 5 www.semtech.com © 2007 Semtech Corp. -- ++ SC2608B POWER MANAGEMENT Theory of Operation Synchronous Buck Converter Synchronous Buck Converter Synchronous Buck Converter Synchronous Buck Converter Synchronous Buck Converter outputs remain in the off state whenever the supply volt- The output voltage of the synchronous converter is set age drops below the set threshold. Lockout occurs if V CC and controlled by the output of the error amplifier. The falls below 3.6V typ. inverting input of the error amplifier receives its voltage from the SENSE pin. The non-inverting input of the error Soft Start Soft Start Soft Start Soft Start Soft Start amplifier is connected to an internal 0.8V reference. The The SC2608B provides a soft start function to prevent large error amplifier output is connected to the compensation inrush currents upon power-up or hiccup retry. If both COMP pin. The error amplifier generates a current proportional and SENSE pins are low (<300mV), the device enters soft to (0.8V-Vsense), which is the COMP pin output current start mode, and the compensation capacitor is slowly (Transconductance ~ 7mS). The voltage on the COMP charged by an internal 4uA current source. When the COMP pin is the integral of the error amplifier current. The COMP pin reaches 300mV, the low side FET is switched on in order voltage is the non-inverting input of the PWM compara- to refresh the bootstrap capacitor, and begin PWM from a tor and controls the duty cycle of the MOSFET drivers. known state. As the COMP pin rises above 800mV, PWM The compensation network controls the stability and tran- begins at minimum duty cycle. sient response of the regulator. The larger capacitor, the slower COMP voltage changes, and slower the duty COMP continues to charge, slowly sweeping the device cycle changes. through the duty cycle range until FB reaches the regulation point of 800mV. Once FB reaches the regulation point, the The non-inverting input voltage of the PWM comparator soft start current is switched off, and the strong error amp is the triangular ramp signal generated from the oscilla- is enabled, providing a glitch-free entrance into closed loop tor. The peak-to-peak voltage of the ramp is 1V, this is a operation. The overcurrent comparator is still active during parameter used in control loop calculation. When the soft start mode, and will override soft start in the event oscillator ramp signal rises above the COMP voltage, the that an overcurrent is detected, such as startup into a comparator output goes high and the PWM latch is re- dead short. set. This pulls DH low, turning off the high-side MOSFET. After a short delay (dead time), DL is pulled high, turning R R R R R Current Limiting Current Limiting Current Limiting Current Limiting Current Limiting DS(ON) DS(ON) DS(ON) DS(ON) DS(ON) on the low-side MOSFET. The oscillator also produces a In case of a short circuit or overload, the low-side (LS) FET set pulse for the PWM latch to turn off the low-side will conduct large currents. To protect the regulator in this MOSFET, After a delay time, DH is pulled high to turn on situation, the controller will shut down the regulator and the high-side MOSFET. The delay time is determined by a begin a soft start cycle later. While the LS driver is on,the monostable on the chip. Phase voltage is compared to the OCP trip voltage. If the phase voltage is lower than OCP trip voltage, an over cur- The triangle wave minimum is about 0.8V, and the maxi- rent condition is detected. The low-side R sense is imple- dson mum is about 1.8V. Thus, if Vcomp = 0.7V, high side duty mented at end of each LS-FET turn-on duration. The mini- cycle is the minimum (~0%) , but if Vcomp is 1.8V, duty mum turn-on time of the LS-FET is set to be 400nS. This cycle is at maximum ( ~90%).The internal oscillator uses an will ensure the sampled signal is noise free by giving enough on-chip capacitor and trimmed precision current sources time for the switching noise to die down. to set the oscillation frequency to 250kHz. Figure 1 shows a 2.5V output converter. If the Vout <2.5V, then the SENSE OCP Hiccup OCP Hiccup OCP Hiccup OCP Hiccup OCP Hiccup voltage < 0.8V. In this case the error amplifier will be sourc- In the event that an overcurrent is detected, the SC2608B ing current into the COMP pin so that COMP voltage and latches the fault and begins a hiccup cycle. Switching is duty cycle will gradually increase.If Vout > 2.5V, the error immediately stopped, and the drivers are set to a tristate amplifier will sink current and reduce the COMP voltage, so condition (Both DH and DL are low). COMP is slowly that duty cycle will decrease.The circuit will be in steady discharged to 300mV with an internal 4uA current source, state when Vout =2.5V , Vsense = 0.8V, Icomp = 0. The providing a long cooldown time to keep power dissipation COMP voltage and duty cycle depend on Vin. low in the event of a continuous dead short. Once COMP and SENSE both fall below the 300mV threshold, the part U Under V nder Voltage Lock oltage Lockout out U U Under V nder V nder Voltage Lock oltage Lock oltage Lockout out out re-enables the 4uA soft start current , and the device begins The under voltage lockout circuit of the SC2608B as- a normal startup cycle again. sures that both high-side and low-side MOSFET driver 6 www.semtech.com © 2007 Semtech Corp. SC2608B POWER MANAGEMENT Applications Information (Cont.) 1 G = A note to the user is needed: The device cannot restart pwm V ramp until both COMP and SENSE are low, to prevent start up where the ramp amplitude is fixed at 1 volts. into a charged output. In the event of an overcurrent The total control loop-gain can then be derived as condition, the output is quickly discharged by the load, follows: therefore bringing SENSE below the 300mV threshold. If ⎛V ⎞ 1+sRC bg c o the COMP pin is pulled low by an external device (such as ⎜ ⎟ T() s =G •G •V • •H() s• m pwm in c ⎜ ⎟ V ⎛ ⎞ ⎛ ⎞ L R ⎝ o⎠ 2 c an open-drain logic gate used for system shutdown), and 1+s⎜RC + ⎟+s LC⎜1+ ⎟ c o o ⎜ ⎟ ⎜ ⎟ R R ⎝ o⎠ ⎝ o⎠ SENSE is high(above 300mV) while COMP is low, then the 1 SC2608B turns on the low side FET to discharge the output H() s = c 1 before changing to shutdown or soft-start mode. The low + sC i 1 R+ side FET turns off when SENSE drops below 300mV and sC the converter remains in the tri-state condition until COMP The task here is to properly choose the compensation is released. Although this shutdown technique can be used network for a nicely shaped loop-gain Bode plot. The successfully on the SC2608B, the system designer using following design procedures are recommended to accom- COMP for external shutdown will need to consider the load plish the goal: on the low side FET when discharging the output capacitor (1) Calculate the corner frequency of the output filter: bank. For large capacitor bank, this peak current can be 1 F = o quite large as it is limited only by the R of the low side 2π LC DS(ON) o FET. Fortunately the duration of this event is quite short, (2) Calculate the ESR zero frequency of the output filter and has been shown in the lab to have no detrimental effect capacitor: 1 on the performance of the external FETs. F = esr 2πR C c o Disabling the output by pulling down COMP/SS pin is only recommended when the output capacitor bank is not too (3) Check that the ESR zero frequency is not too high. large. F SW F < esr 5 Compensation Network Design Compensation Network Design Compensation Network Design Compensation Network Design Compensation Network Design If this condition is not met, the compensation structure may not provide loop stability. The solution is to add some electrolytic capacitors to the output capacitor bank E/A G_PWM to correct the output filter corner frequency and the ESR L R1 zero frequency. In some cases, the filter inductance may VBG R Rc Ro also need to be adjusted to shift the filter corner fre- 0.8V Ci VIN quency. It is not recommended to use only high frequency Co R2 C multi-layer ceramic capacitors for output filter. (4) Choose the loop gain cross over frequency (0 dB fre- quency). It is recommended that the crossover frequency is always less than one fifth of the switching frequency : Fig. 4. SC2608B small signal model. 1 F = •F X_OVER SW The control model of SC2608B is depicted in Fig. 4. 5 This model can also be used to generate loop gain Bode If the transient specification is not stringent, it is better plots. The bandgap reference is 0.8V and trimmed to to choose a crossover frequency that is less than one +/-1% accuracy. The desired output voltage can be tenth of the switching frequency for good noise immu- achieved by setting the resistive divider network, R1 and nity. The resistor in the compensation network can then R2. The error amplifier is transconductance type with fixed be calculated as: 2 gain of: 0.007 A F ⎛ ⎞ 1 ⎛F ⎞ ⎛ ⎞ V X_OVER G = esr o ⎜ ⎟ m ⎜ ⎟ ⎜ ⎟ R= • • • V ⎜ ⎟ ⎜ ⎟ ⎜ ⎟ G •V •G F F V pwm in m ⎝ o⎠ ⎝ esr ⎠ bg ⎝ ⎠ The compensation network includes a resistor and a ca- when pacitor in series, which terminates the output of the F sw F < F < error amplifier to the ground. o esr 5 The PWM gain is inversion of the ramp amplitude, and this gain is given by: 7 www.semtech.com © 2007 Semtech Corp. SC2608B POWER MANAGEMENT Applications Information (Cont.) (5) The compensation capacitor is determined by choos- An example is given below to demonstrate the proce- ing the compensator zero to be about one fifth of the dure introduced above. output filter corner frequency: C =4400uF V =12V o in F R =0.009Ω o V =2.5V c F = o zero 5 V =0.8V I =15A bg o V =1V F =250KHz 1 ramp sw C= L=2.2uH G =0.007A/V 2πR•F m zero SC2608B soft start time is determined by the set C =1nF i compensation capacitor. Capacitance can be adjusted set to R =1.5KΩ R =1.33KΩ c c to satisfy the soft start requirement. set to C=100nF C=327.95nF (6) The final step is to generate the Bode plot by using for suitable soft start time the simulation model in Fig. 4 or using the equations pro- vided here with Mathcad. The phase margin can then be checked using the Bode plot. Loop Gain Mag (dB) 100 50 mag() i 0 50 3 4 5 6 . . . . 10 100 1 10 1 10 1 10 1 10 F i Loop Gain Phase (Degree) 0 45 phase() i 90 135 180 3 4 5 6 . . . . 10 100 1 10 1 10 1 10 1 10 F i Fig. 5. Bode plot of the loop 8 www.semtech.com © 2007 Semtech Corp. SC2608B POWER MANAGEMENT Application Information T T T T Typical Application Schematic ypical Application Schematic ypical Application Schematic ypical Application Schematic ypical Application Schematic Bill of Materials Bill of Materials Bill of Materials Bill of Materials Bill of Materials Iy temQe uantitRt eferencPr ar Vende 11CV 1 4o .7uF/16 Yage 22CV 2,C31J 500uF/16 Panasonic F 31CV 4 1o 00pF/50 Yage 42CV 5,C13 1o uF/16 Yage 51CV 6 6o 8nF/25 Yage 62CV 7,C82J 200uF/6.3 Panasonic F 73CV 9,C10,C114o .7uF/6.3 Yage 81CF 12 2o .2n Yage 91LH 1 1S .2u 3L COIL 11 0 QA 1 In PD09N03L Infineo 11 1 QA 2 In PD13N03L Infineo 11 2 RK 2 1o Yage 12 3 R% 3,R6 1o K, 1 Yage 12 4 R0 4,R5 1o R Yage 11 5 UB 1 SH C2608 SEMTEC 9 www.semtech.com © 2007 Semtech Corp. SC2608B POWER MANAGEMENT Application Information T T T T Typical DDR VDDQ Application Schematic ypical DDR VDDQ Application Schematic ypical DDR VDDQ Application Schematic ypical DDR VDDQ Application Schematic ypical DDR VDDQ Application Schematic 5VDual Q1 C1 C2 C3 C4 C5 U1 1.8VOUT/24A 100pF 8 1 Phase BST L1 C6 7 2 Q2 1.2uH/40A C8 C9 C10 C11 C12 C13 COMP/SS DH 1uF/16V R4 R3 R2 C7 68nF 6 3 2R2 1k 1.27k Sense SENSE GND Sense 5 4 C14 5VDual VCC DL R5 1n D1 1k C15 BAT54H SC2608B 1uF/16V D2 1N4148 +12V Bill of Materials Bill of Materials Bill of Materials Bill of Materials Bill of Materials Iy temQe uantitRt eferencPr ar Vende 14CV 1,C11,C12,C134o .7uF/6.3 Yage 23CV 2,C3,C41J 500uF/6.3 Panasonic F 31CV 5 1o 00pF/50 Yage 42CV 6,C15 1o uF/16 Yage 51CV 7 6o 8nF/25 Yage 63CV 8,C9,C101J 800uF/6.3 Panasonic F 71CV 14 1o nF/50 Yage 81DH 1 Bo AT54 Yage 91D8 2 1d N414 Fairchil 11 0 LA 1 1S .2uH/40 3L COIL 11 1QA 1 In PD09N03L Infineo 11 2QA 2 In PD09N03L Infineo 11 3 R% 4 2o R2, 5 Yage 11 4 R% 2 1o K, 5 Yage 11 5 R% 3 1o .27K, 1 Yage 11 6 R% 5 1o K, 1 Yage 11 7 UB 1 SH C2608 SEMTEC 10 www.semtech.com © 2007 Semtech Corp. IPB09N 03LA IPB09N 03LA 4.7uF/16V 1500uF/16V 1800uF/6.3V 1800uF/6.3V 1500uF/16V 1800uF/6.3V 1500uF/16V 4.7uF/6.3V 4.7uF/6.3V 4.7uF/6.3V SC2608B POWER MANAGEMENT Outline Drawing - SO-8 DIM ENSIO NS IN C H E S MILLIMETERS A DIM MIN NO M M AX MIN NO M MAX D e - - A .0 5 3 .0 6 9 1.35 1.75 N - - A1 .0 0 4 .0 1 0 0.10 0.25 .0 4 9 - .0 6 5 1.25 - 1.65 A2 - - 2X E/2 b .0 1 2 .020 0.31 0.51 c .0 0 7 - .0 1 0 0.17 - 0.25 E1 D .1 8 9 .193 .1 9 7 4.80 4.9 0 5.00 E E1 .1 5 0 .154 .1 5 7 3.80 3.9 0 4.00 E .2 3 6 B S C 6 .0 0 BSC e .0 5 0 B S C 1 .2 7 BSC 12 .010 - .020 0.25 - 0.50 h ccc C L .0 1 6 .028 .0 4 1 0.40 0.72 1.04 2X N /2 T IP S e/2 L1 (.041) (1.04) N 8 8 B - - 01 0 8 0 8 aaa .004 0.10 bbb .010 0.25 D ccc .008 0.20 aaa C A2 h A SE AT IN G PLAN E h C A1 H bxN bbb C A-B D c GAGE PLAN E 0.25 L 01 (L1) SEE D E T A IL A DE T A IL A SIDE VIEW N O TES: 1. C O N T R O L L IN G D IM E N S IO N S AR E IN M IL L IM ET ER S (A N G L ES IN D E G R EES). 2. D A T U M S A N D T O B E D E T E R M IN E D A T D A T U M P L A N E -A - -B - -H - 3. DIM E N S IO NS "E 1 " A ND "D " D O NO T INCL UDE M O L D F L A S H , P R OT RUS IO NS O R G A T E B URRS . Land Pattern - SO-8 X DIMENSIONS DIM INCHES MILLIMETERS (.205) (5.20) C G .118 3.00 (C ) G Z P .050 1.27 X .024 0.60 Y .087 2.20 Y Z .291 7.40 P NO TE S: 1. T H IS LA ND P A T T E RN IS F O R R E F E RE N C E P URP OS E S ONLY . C O NSU LT YO UR M A NU F A CT UR IN G G R O U P T O E N S U RE Y O U R C O M PANY'S M A N U FA C T U R ING G U ID ELIN ES ARE M E T . 2. RE F E RE NC E IP C-S M -782A , R LP NO. 300A . 11 www.semtech.com © 2007 Semtech Corp. SC2608B POWER MANAGEMENT Outline Drawing - Power SOIC-8L (EDP) A D e N DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX 2X E/2 A .053 - .069 1.35 - 1.75 - - A1 .000 .005 0.00 0.13 E1 E - - A2 .049 .065 1.25 1.65 - - b .012 .020 0.31 0.51 c .007 - .010 0.17 - 0.25 12 D .189 .193 .197 4.80 4.90 5.00 ccc C E1 .150 .154 .157 3.80 3.90 4.00 E .236 BSC 6.00 BSC 2X N/2 TIPS e/2 e .050 BSC 1.27 BSC .086 .090 .094 2.19 2.29 2.39 F B - - h .010 .020 0.25 0.50 L .016 .028 .041 0.40 0.72 1.04 D L1 (.041) (1.05) aaa C N 8 8 - - 01 0 8 0 8 A2 A aaa .004 0.10 SEATING bbb .010 0.25 PLANE C A1 ccc .008 0.20 bxN bbb C A-B D h F EXPOSED PAD h H F c GAGE PLANE 0.25 L 01 (L1) DETAIL A SEE DETAIL A SIDE VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B T - O BE DETERMINED AT DATUM PLANE -H- 3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. REFERENCE JEDEC STD MS-012, VARIATION BA. 4. Land Pattern - Power SOIC-8L (EDP) SOLDER MASK E D DIMENSIONS DIM INCHES MILLIMETERS C (.205) (5.20) Z (C) D .098 2.49 G F E.201 5.10 F.096 2.44 G .118 3.00 Y P .050 1.27 X .024 0.60 THERMAL VIA P Y .087 2.20 ?0.36mm X Z .291 7.40 NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A. 3. THERMAL VIAS IN THE LAND PATTERN OF THE EXPOSED PAD SHALL BE CONNECTED TO A SYSTEM GROUND PLANE. FAILURE TO DO SO MAY COMPROMISE THE THERMAL AND/OR FUNCTIONAL PERFORMANCE OF THE DEVICE. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 12 www.semtech.com © 2007 Semtech Corp.