SEMTECH SC1116

SC1116 Linear FET Controller For DDR Supplies POWER MANAGEMENT Description Features The SC1116 is a low cost controller for low power ‹ User can select FETs to optimize system current linear DDR power supplies. rating/dropout/cost ‹ Low V , 0.5V to 2.5V DDQ The SC1116 comes in a space saving SOT-23 6 pin ‹ -40°C to +85°C operating temperature package. ‹ External compensation capable for low ESR loads ‹ Minimum external components The SC1116 provides a dual gate drive for the top serial ‹ 0.6 mA Quiescent current and bottom parallel MOSFETs with internal shoot through ‹ Guaranteed no shoot through protection. ‹ SOT-23 6L small package. Fully WEEE and RoHS compliant The wide range of input voltages (3V to 15V) allows the chip to work in many various applications. Applications ‹ DDR supplies The variable output voltage is programmable from the ‹ SCSI outside with an input divider or an external reference. ‹ Line termination Wide range of V , down to 0.5V ‹ Source / Sink LDOs DDQ Typical Application Circuit Q1 MOS FET N VDDQ=2.5Vtyp VTT=1.25Vtyp R1 47uF U1 1k 0.5% typ SC1116 GND 1 6 VCC DRVH Vcc=3 to 15V 0.1uF 2 5 GND FB Q2 3 4 MOS FET N REF DRVL R2 1k 1k 1k 0.5% 0.1uF typ typ 4.7nF 4.7nF typ typ Notes: (1) Values used for optional compensation are 1K and 4.7nF typical. (2) When using 3V as Vcc, use of low threshold FETs is a must. Revision: March 28, 2007 1 www.semtech.com SC1116 POWER MANAGEMENT Absolute Maximum Rating Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied. Parameter Sm ymbol Ms aximu Unit IV nput Supply Voltage -V 0.3 to +16.5 CC OT perating Ambient Temperature Range -C 40 to +85 ° A OT perating Junction Temperature Range -C 40 to +125 ° J ST torage Temperature Range -C 65 to +150 ° STG Thermal Impedance Junction to Ambient 9W 5.7 °C/ θ JA Thermal Impedance Junction to Case θ 6W 1.7 °C/ JC Power Dissipation at T=P 25°C 2W 50 m A D LT ead Temperature (Soldering) 10 seconds 3C 00 ° LEAD ED SD Rating (Human Body Model) E2 S kV Electricial Characteristics Unless otherwise specified, V = 5V, 0.5V ≤ V ≤ 2.5V, R1 = R2 = 1kΩ +/- 0.1%. CC DDQ Specifications with standard typeface are for T = 25°C, and limits in boldface type apply over the full operating temperature range J (T = -40°C to +85°C). A Ps arameter Tn est Condition Mp i Tx y Ms a Unit Supply Voltage 351V (1) Load Regulation IL: 0 + 3A -1 % IL: 0 - 3A +1 QV uiescent Current/Standby Current=0 15V, no load = 0A 60 800 µA CC FV B & REF Input Current =0 15V 1A 0 n CC Gate Drive OI utput Low =5 2.5mA 0.1 0.25 V SINK OI utput High = 2.5mA Vcc -0.25VV cc -0.15 SOURCE Note: (1) For Load Regulation testing use a low duty cycle current pulse, when measuring VTT. www.semtech.com  2007 Semtech Corp. 2 SC1116 POWER MANAGEMENT Pin Configuration Ordering Information Pk art NumberTe op Mar Packag (1) SC1116ISKTR TOP VIEW AL H00 SOT-23 6 (1)(2) SC1116ISKTRT VCC 1 6 DRVH Notes: (1) Only available in tape and reel packaging. A reel GND 2 5 FB contains 3000 devices. (2) Lead free option. Fully WEEE and RoHS compliant. REF 3 4 DRVL (SOT-23 6L) Pin Descriptions Pe in #Pn in Nam Pin Functio 1C VC Supply pin, connect a 3V to 15V supply and decouple to ground with a 0.1µF ceramic capacitor. 2DG. N Power and signal ground 3FR. E Reference input. Output voltage will be regulated to this voltage 4LD. RV Low side FET drive output 5BF. Feedback pin 6HD. RV High side FET drive output Block Diagram  2007 Semtech Corp. 3 www.semtech.com SC1116 POWER MANAGEMENT Application Information Overview The SC1116 linear controller is designed to meet the The SC1116 controller offers a low cost solution for DDR JEDEC specifications for termination of DDR-SDRAM. termination voltage regulation by using external pass el- Double Data Rate (DDR) memory is clocked at the same ements (MOSFETs). Having the flexibility of choosing the speed as older SDRAM (synchronous dynamic random MOSFETs allows for optimization on the basis of cost/ access memory), yet handles twice the amount of data size/performance of the specific application. by using the rising and falling edge of the clock signal for data transfers. Another difference is that DDR memory Test Circuit & Waveforms requires 2.5V instead of 3.3V used by standard SDRAM. The other feature that separates DDR memory from a The test circuit is shown below in Figure 1. conventional type is employment of the V – termination Note that V voltage is supplied externally to eliminate TT REF voltage. Main requirements for the V are that it must inaccuracy caused by resistor divider. TT track variations of V and be able to supply (source) DDQ current, and absorb (sink) current. +/-3A VTT=1.25Vtyp Q1 Isource/ Isink Isink 3A Isource IR3714 VDDQ=2.5V Po wer C1 100uF Supply 32m U1 C6 SC1116 270uF 22m 1 6 Vcc=5V VCC DRVH 2xIsink 0A to 6A Step C2 1uF Pulse load, dc=50% 2 5 GND FB Q2 3 4 IR3714 Vref=1.25V REF DRVL Current Electronic Probe C3 Load 0.1uF R3 R4 1k 1k C4 C5 4.7nF 4.7nF Figure 1. www.semtech.com  2007 Semtech Corp. 4 SC1116 POWER MANAGEMENT Typical Characteristics Regulation Vtt vs. Vref @ Is/s=1A; Vcc=5V Regulation Vtt vs. Vref @ Is/s=5A; Vcc=5V 2.0% 2.0% 1.0% 1.0% 0.0% 0.0% -1.0% -1.0% -2.0% -2.0% -3.0% -3.0% -4.0% -4.0% -5.0% -5.0% 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Vref (Vddq/2), V Vref (Vddq/2), V Regulation Vtt vs. Vref @ Is/s=1A; Vcc=12V Regulation Vtt vs. Vref @ Is/s=5A; Vcc=12V 2.0% 2.0% 1.0% 1.0% 0.0% 0.0% -1.0% -1.0% -2.0% -2.0% -3.0% -3.0% -4.0% -4.0% -5.0% -5.0% 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Vref (Vddq/2), V Vref (Vddq/2), V  2007 Semtech Corp. 5 www.semtech.com dVtt / Vtt dVtt / Vtt dVtt / Vtt dVtt / Vtt SC1116 POWER MANAGEMENT Typical Characteristics (Cont.) Max. Sourcing Current vs. V CC 6 V = 2.5V DDQ V = 1.25V REF V = 1.237V TT 5 4 3 2 1 0 3 3.5 4 4.5 5 5.5 6 6.5 SUPPLY VOLTAGE, V (V) CC Max. Sinking Current vs. V CC 4.4 V = 2.5V DDQ V = 1.25V REF 4.3 V = 1.263V TT 4.2 4.1 4 3.9 3.8 3.7 3.6 33.5 44.5 55.566.5 SUPPLY VOLTAGE, V (V) CC www.semtech.com  2007 Semtech Corp. 6 OUTPUT CURRENT (A) OUTPUT CURRENT (A) SC1116 POWER MANAGEMENT Typical Characteristics (Cont.) Quiescent Current vs. Tem perature 520 V = 5V CC V = 2.5V DDQ V = 1.25V 510 REF V = 1.25V TT I = 0A LOAD 500 490 480 470 460 450 -40 -25 -10 5 20 35 50 65 80 95 110 125 TEMPERATURE °C Quiescent Current vs. V CC 800 V = 2.5V DDQ V = 1.25V REF 700 V = 1.25V TT I = 0A LOAD 600 o 125 C 500 400 o 25 C o 0 C 300 200 100 0 3 3.5 4 4.5 5 5.5 6 6.5 SUPPLY VOLTAGE, V (V) CC  2007 Semtech Corp. 7 www.semtech.com QUIESCENT CURRENT (uA QUIESCENT CURRENT (uA) SC1116 POWER MANAGEMENT Test Waveforms V Transient Response TT V = 5V CC V = 5V CC V = 2.5V DDQ V = 2.5V DDQ V = 1.25V REF V = 1.25V REF I : STEP I : STEP +1.75A +2.3A to –1.75A to - 2.2A Slew Rate: Slew Rate: 2.5 A/uS 2.5 A/uS Time (50us/div) Time (50us/div) V = 5V V = 5V CC CC V DDQ = 2.5V V = 2.5V DDQ VREF = 1.25V V = 1.25V REF I : I : STEP STEP - 0.75A +1.25A to –1.25A to + 0.75A Slew Rate: Slew Rate: 2.5 A/uS 2.5 A/uS Time (50us/div) Time (50us/div) www.semtech.com  2007 Semtech Corp. 8 V TT V TT ISOURCE / ISINK 100mV/div I / I SOURCE SINK 100mV/div V V TT TT I / I SOURCE SINK ISOURCE / ISINK 100mV/div 100mV/div SC1116 POWER MANAGEMENT Test Waveforms (Cont.) V Transient Response TT V = 5V V = 5V CC CC V = 2.5V V = 2.5V DDQ DDQ V = 1.25V V = 1.25V REF REF COUT = 47uF ceramic I : I : STEP STEP - 0.5A - 0.53A to + 0.53A to + 0.53A Slew Rate: Slew Rate: 2.5 A/uS 2.5 A/uS Time (50us/div) Time (50us/div) V = 5V CC V = 5V CC VDDQ = 2.5V V = 2.5V DDQ VREF = 1.25V V = 1.25V REF I : STEP I : STEP + 0.03A + 0.03A to - 2.25A to + 2.25A Slew Rate: Slew Rate: 2.5 A/uS 2.5 A/uS Time (20us/div) Time (20us/div)  2007 Semtech Corp. 9 www.semtech.com V TT V TT ISOURCE / ISINK 100mV/div I / I SOURCE SINK 20mV/div V TT VTT ISOURCE / ISINK 100mV/div I / I 50mV/div SOURCE SINK SC1116 POWER MANAGEMENT Evaluation Board Top View Top Layer Evaluation Board Schematic Q1 IR3714 VDDQ=2.5Vtyp VTT=1.25Vtyp C1 22uF R1 C6 U1 1k 0.5% 47uF SC1116 GND 1 6 VCC DRVH Vcc=3 to 15V C2 0.1 2 5 GND FB Q2 3 4 IR3714 REF DRVL R2 R3 R4 C3 1k 0.5% 1k 1k 0.1 C4 C5 4.7nF 4.7nF Notes: (1) Values used for optional compensation are 1K and 4.7nF typical. (2) When using 3V as Vcc, use of low threshold FETs is a must. www.semtech.com  2007 Semtech Corp. 10 SC1116 POWER MANAGEMENT Outline Drawing - SOT-23-6 DIMENSIONS INCHES MILLIMETERS A DIM MIN NOM MAX MIN NOM MAX A - .057 0.90 - 1.45 e1 .035 D .000 - .006 0.00 - 0.15 A1 A2 .035 .045 .051 .90 1.15 1.30 - - N b .010 .020 0.25 0.50 2X E/2 c - - .003 .009 0.08 0.22 EI E D .110 .114 .122 2.80 2.90 3.10 E1 .060 .063 .069 1.50 1.60 1.75 12 E .110 BSC 2.80 BSC ccc C e .037 BSC 0.95 BSC e1 .075 BSC 1.90 BSC 2X N/2 TIPS L .012 .018 .024 0.30 0.45 0.60 e (.024) (0.60) L1 B N 6 6 01 0° - 10° 0° - 10° aaa .004 0.10 bbb .008 0.20 D ccc .008 0.20 aaa C A2 A SEATING H PLANE A1 C c bxN GAGE PLANE bbb C A-B D 0.25 L 01 (L1) DETAIL A SEE DETAIL A SIDE VIEW NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS AND TO BE DETERMINED AT DATUM PLANE -A- -B- -H- 3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. Minimum Land Pattern - SOT-23-6 X DIMENSIONS DIMENSIONS DIM DIM INCHES INCHES MILLIMETERS MILLIMETERS (.098) (2.50) C C G G .055 1.40 (C) G Z .037 0.95 P P X X .024 0.60 Y Y Y .043 1.10 Z Z .141 3.60 P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. Contact Information Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804  2007 Semtech Corp. 11 www.semtech.com