Manufacturers
SEMELAB BUZ900
Description
Semelab BUZ900 Series Silicon N-Channel Power MOSFET 160V, 125 Watt Transistor Power
Part Number
BUZ900
Price
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Manufacturer
SEMELAB
Lead Time
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Category
PRODUCTS - B
Specifications
Alternate Case Style
TO-204AA
Continuous Drain Current Id
8 A
Current Id Max
8 A
Current Temperature
25°C
Device Marking
BUZ900
Drain Source Voltage Vds
160 V
Full Power Rating Temperature
25°C
Mounting Type
Through Hole
Number of Pins
2
Number of Transistors
1
On State Resistance
1.5 Ohm
Package/Case
TO-3
Power Dissipation Pd
125 W
Threshold Voltage Vgs Typ
1.5 V
Transistor Case Style
TO-3
Transistor Polarity
N Channel
Voltage Vds Typ
160 V
Voltage Vgs Max
1.5 V
Features
- ENHANCEMENT MODE
- HIGH ENERGY RATING
- HIGH SPEED SWITCHING
- HIGH VOLTAGE (160V & 200V)
- INTEGRAL PROTECTION DIODE
- N–CHANNEL POWER MOSFET
- SEMEFAB DESIGNED AND DIFFUSED
Datasheet
Extracted Text
BUZ900 MAGNA BUZ901 TEC MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 ± 0.1 1.50 11.60 POWER MOSFETS FOR Typ. ± 0.3 AUDIO APPLICATIONS FEATURES 12 • HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE TO–3 • P–CHANNEL ALSO AVAILABLE AS Pin 1 – Gate Pin 2 – Drain Case – Source BUZ905 & BUZ906 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated) BUZ900 BUZ901 case V Drain – Source Voltage 160V 200V DSX V Gate – Source Voltage ±14V GSS I Continuous Drain Current 8A D I Body Drain Diode 8A D(PK) P Total Power Dissipation @ T = 25°C 125W D case T Storage Temperature Range –55 to 150°C stg T Maximum Operating Junction Temperature 150°C j R Thermal Resistance Junction – Case 1°C/W θJC Prelim. 10/94 Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. 39.0 ± 1.1 30.2 ± 0.15 16.9 ± 0.15 Ø 20 Max. Ø 1.0 BUZ900 MAGNA BUZ901 TEC STATIC CHARACTERISTICS (T = 25°C unless otherwise stated) case Characteristic Test Conditions Min. Typ. Max. Unit V = –10V BUZ900 160 GS BV Drain – Source Breakdown Voltage V DSX I = 10mA BUZ901 200 D BV Gate – Source Breakdown Voltage V = 0 I = ±100μA ±14 V GSS DS G V Gate – Source Cut–Off Voltage V = 10V I = 100mA 0.15 1.5 V GS(OFF) DS D V * Drain – Source Saturation Voltage V = 0 I = 8A 12 V DS(SAT) GD D V = 160V DS 10 BUZ900 I Drain – Source Cut–Off Current V = –10V mA DSX GS V = 200V DS 10 BUZ901 yfs* Forward Transfer Admittance V = 10V I = 3A 0.7 2 S DS D DYNAMIC CHARACTERISTICS (T = 25°C unless otherwise stated) case Characteristic Test Conditions Min. Typ. Max. Unit C Input Capacitance 500 iss V = 10V DS C Output Capacitance 300 pF oss f = 1MHz C Reverse Transfer Capacitance 10 rss t Turn–on Time V = 20V 100 on DS ns t Turn-off Time I = 5A 50 off D * Pulse Test: Pulse Width = 300μs , Duty Cycle ≤ 2%. Derating Chart 150 125 100 75 50 25 0 0 25 50 75 100 125 150 T — CASE TEMPERATURE (˚C) C Prelim. 10/94 Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. CHANNEL DISSIPATION (W) P P = = CH CH 1 1 2 2 T O D OPE A N 5 5 C R I W W BUZ900 MAGNA BUZ901 TEC Typical Output Characteristics Typical Output Characteristics 9 9 6V 8 8 T = 25˚C T = 75˚C C C 6V 7 7 5V 6 6 5V 5 5 4V 4V 4 4 3V 3 3 3V 2 2 2V 2V 1 1 0 0 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90 V — DRAIN – SOURCE VOLTAGE (V) V — DRAIN – SOURCE VOLTAGE (V) DS DS Forward Bias Safe Operating Area Transconductance 10 100 V = 20V DS T = 25˚C C 1 10 T = 25˚C C T = 75˚C C 0.1 1 BUZ900 BUZ901 0.01 0.1 1 10 100 1000 0 1 2 3 4 5 6 7 8 V — DRAIN – SOURCE VOLTAGE (V) I — DRAIN CURRENT (A) DS D Drain – Source Voltage vs Gate – Source Voltage Typical Transfer Characteristics 10 9 T = 25˚C V = 10V C DS 8 T = 25˚C C 8 7 T = 75˚C C 6 6 T = 100˚C C I = 6A 5 D 4 4 3 I = 3A D 2 2 I = 1A D 1 0 0 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 V — GATE – SOURCE VOLTAGE (V) V — GATE – SOURCE VOLTAGE (V) GS GS Prelim. 10/94 Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. V — DRAIN – SOURCE VOLTAGE (V) I — DRAIN CURRENT (A) I — DRAIN CURRENT (A) DS D D 160V 200V I — DRAIN CURRENT (A) G — TRANSCONDUCTANCE (S) I — DRAIN CURRENT (A) D FS D
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