Samsung Enterprise SSD 2013 Samsung OEM offering PM843 SM843 SM843T SM1625 Availability Feb 13 now Feb 13; 960GB: March 13 on request Interface SATA 6.0Gbps SATA 6.0Gbps SATA 6.0Gbps SAS 6G Dual port Read intensive, <10% Write 20-30% write 40-50% write 60-70% write Target Application content & Streaming Servers, Low cost, Sequential Boot Drive / Scratch Drive, Meta data (HPC), Web extensive read and Write cache , Data warehousing, high edurance Tier 0, Storage servers Read Performance server, Random read perfromance optimized recommendations perferct cost sensitive, entry level, Low endurance, a perfect trade-off between cost and edurance; Mid range endurance, High rentention, low latency high Endurance and high performance for design-in High rentention MLC based SSD with Storage Firmware MZ7TD120HAFV- MZ7TD240HAFV- MZ7TD480HAGM- MZ7PD120HAFV- MZ7PD240HAFV- MZ7PD480HAGM- MZ7WD120HAFV- MZ7WD240HAFV- MZ7WD480HAGM- MZ7WD960HAGP- MZ6ER100HAFV- MZ6ER200HAG MZ6ER400HAGL- MZ6ER800HAGL- Part numbers 000DA 000DA 000DA 000DA 000DA 000DA 00003 00003 00003 00003 00003 M-00003 00003 00003 Capacities 120 GB 240 GB 480 GB 120 GB 240 GB 480 GB 120 GB 240 GB 480 GB 960 GB 100 GB 200 GB 400 GB 800 GB relative price ball park per GB 100% 113% 138% 338% Retention 10 years / 3 months 10 years / 3 months 10 years / 3 months 10 years / 3 months virgin SSD / by guaranteed endurance A Warranty (logical OR) 3 years OR TBW 5years OR TBW 5years OR TBW 5years OR TBW TBW (Total Bytes Written) allowed 207 TB 415 TB 830 TB 1 PB 2 PB 4 PB 2 PB 4 PB 8 PB 16 PB 4 PB 8 PB 16 PB 24 PB 1) 100% 64KB Seq. Write 2) 2) 2) 2) 3) 2) 100% 4KB Rand. Write 105TB 210TB 500 TB 1 PB 1 PB 2 PB 4 PB 3.5 PB 7 PB 10 PB 52 TB 250 TB 500 TB 1.8 PB 3) 100% 8KB Rand. Write Seq. Write @ 64KB 207 GB 415 GB 830 GB 1 TB 2 TB 4 TB 2 TB 4 TB 8 TB 16 TB 4 TB 8 TB 16 TB 24 TB estimated allowed TBW per day Ran. Write @ 4KB 52 GB 100 GB 210 GB 250 GB 500 GB 1 TB 500 GB 1 TB 2 TB 4 TB for a life time of 3 years: Ran. Write @ 8KB 1.8 TB 3.5 TB 7 TB 10 TB WPD random / Sequencial write 0.6 / 2.5 @3 years 1 / 4 @ 5 years 2 / 8 @ 5 years 5 / 12 @ 5 years D (work load per day) Latency Random Read/ write 0.28 ms/ 0.11 ms 0.13 ms/ 0.08 ms 0.13 ms/ 0.08 ms - Controller MDX (SATA 6.0G) MDX (SATA 6.0G) MDX (SATA 6.0G) RDX (SAS Dual Port: 12.0G) NAND 21nm 64Gb TLC 21nm 64Gb MLC 21nm 64Gb MLC 21nm 64Gb Ep-MLC Form Factor 2.5” (7mm thickness) 2.5” (7mm thickness) 2.5” (7mm thickness) 2.5”(15mm thickness) Data -loss Protection None None Yes, Tantal Cap Yes, Super Capacitor Over-Provisioning 7% 7% 7% 28% Smart ID read out and setting Yes Yes Yes None Magician Tool Windows & Linux Power Target 3.6W / 0.3W 3.4W / 0.3W 3.0W / 0.3W 9W / 4W ( 5V +12V ) Typ. (Active Write) / Min. (idle) B @ 128KB: Single Port : 497 / 435 MB/s Seq. Read / Write 520 / 330 MB/s 530 / 420 MB/s 500 / 400 MB/s Dual Port : 902 / 740 MB/s @64k Ran. Read @4KB: Single Port : 72 KIOPS Dual Port : 101.5 KIOPS 60KIOPS(TBD) 70 KIOPS 60 KIOPS @4k 8KB: Single Port: 50 KIOPS Dual Port: 81 KIOPS c @4KB: Single / Dual Port : 30 KIOPS / 60KIOPS Ran. Write 1.5/2.5/2.5 KIOPS 8.5 / 11.5 / 11.5 KIOPS 5.5 / 11 / 11 / 11 KIOPS @8KB: 90 / 150 KIOPS @4k SSD approach recommendation: Retention: Retention refers to the time that the cells in SSD are capable of Endurance / life cycle: SSD is based on NAND Flash cells. The writting of cells is SSD vs. HDD: Smart ID & Life cycle The key advantage of SSD is its feature of having a forecastable life cycle. Lacking mechanical parts, 1) Pre-selection based on needs on TBW and keeping the data before a refresh needs to take place. virgin SSD has up to 10 a destructive process. The more the cell is written the more the cell is damged. its life cycle depends strongly on writing of data which can be tracked by electrical commands, the so-called SMART IDs. Our Magicin GB writes per day and targte application years retention based on the behavior of Flash cell built upon. The more the The leakage current increases, retention decreases. If the SSD and so the cells Tool for both windows and Linux platforms support you to track the amouth of data you write on SSD. If you track this over a period of guide Flash cell are written, the higher the cell wears off and and the leakage are connected to power 24/7 as in the case of server implementation could be time in your environment, the extrapolation will provide you with an exact figure of the life cycle of your SSD. the TBW figures should 2) Perform a proof of concept current increases.by the consumption of TBW the retention declines to ~3 assumed, the firware of SSD could be adjusted on increasing endurance, while provide you an overview of expected life cycle. 3) Implement concept in bigger scale months. the refresh of cells can be adjusted. 4) Keep monitoring the smart IDs Over-provisioning: The amount of the data intented to be written on SSD is not the same amount of data written on SSD. The Virgin SSD / Preconditioning: a virgin SSD has a very high write bandwidth. As SSD as HDD replacement? SSD is not a direct HDD replacement. The writing TBW: Total Bytes Written is a key parameter for SSD. The background is mainly the basic characteristics of Flash. Writing is done page-wise, but deleting happens on a block. Any SSD needs free soon as all cells are written to once, the bandwidth decreases partially behavior of your application is key to a right choice of SSD. Check the TBW data is provided above for the life cycle and a guidance of blocks to be able to write effectively. A designated physical area of the SSD which is not used for logical data allocations, called over- dramatically. Hence, before testing and evaluating SSD performance, make figures and the calculated total GB per Day values to a get a feeling on each SSD total GB per day. Nothing is more critical to SSD than the provisioning, helps the controller to allow for a broader write bandwidth. the higher the over-provisioning the better the write sure to have written to all cells once. This is called preconditioning of an SSD capabilities. The bandwidth and perfromance is the 2nd aspect to look into, and write behavior of your application. perfromance, witha trade-off of losing blocks for physical data. to get sustained results. last the latency. A TBW figures are prelimianry, and will be updated by the end of the year 2012, subject of change, please ask your Samsung sales representative for the latest information B sustained (after pre-conditioning) 100% 4KB random write IOPS 24 hrs x 7 days x 365 days C the higher the SSD density the higher the the write performance, the "up to" value refers to this aspect and reflects the performance of the highest density D Number of time that SSD capacity could be writteb in Random Writes per day for the specified period time given till TBW is consumed Ver 13/ March 13 all data are subject to changes without notice, please conatct Samsung channel partner in your region for latest update © Samsung Semiconductor Europe Performance Samsung DDR3 DRAM offering for Server : Green memory, Generation 2 (G2 = 30nm class) nominal speed Syteme Behavior, Intel Xeon E5 max. and voltage population: DIMM/Channel Target Application ECC REG (standard height) for max. 2TB in Westmere-EX 4 socket; needs 64 units, runs at 800; 32GB 4 1333 1,35 - - | - - || - ||| 4Gb 30nm 12W 4.0W M393B4G70BM0-YH9 adpot Load reduced DIMM Modules fro Sandybridge 4 socket boards HPC, Cloud 2 & more socket servers, Push product, highest flexibility , parity reached with 2x8GB 16GB 2 1600 1,35 4Gb 30nm 6.4W 2.4W M393B2G70BH0-YK0 | || || || || ||| - - normal height of min. 1U, no foot-print and space Mainstream, highest volume and availability; 8GB 2 1600 1,35 4Gb 30nm 2.6W 1.1W M393B1G73BH0-YK0 | || || || || ||| - - limitations Legacy product, to maximize bandwidth in small memory configurations, e.g. 12GB per 4GB 2 1600 1,35 2Gb 30nm 3.4W 1.0W M393B5273DH0-YK0 | || || || || ||| - - Intel Xeon E5 2400 CPU Load Reduced BIG DATA, In-Memory , mainly Only for Ivybridge platform 64GB 4 1333 1,35 - - | || ||| ||| - - 4Gb 30nm 25W 11.6W M386B8G70BO0-YH9 for Small adder vs. normal REG DIMMs. It makes sense for usage of starting 2 DPC or higher 4 & more socket servers, population, due to higher bandwidth. Please note: slightly higher power consumption 32GB 4 1600 1,35 | - - || ||| ||| - - 4Gb 30nm 13W 5.8W M386B4G70BM0-YK0 mainly 3 DPC, high density than RDIMM while keeping up memory bandwidth 16GB RDIMM is a more preferred part. 16GB 4 1600 1,35 | - - || ||| ||| - - 4Gb 30nm 6.7W 3.4W M386B2K70DM0-YK0 ECC UNB / ECC UNB SO-DIMM 8GB 2 1600 1,35 4Gb 30nm 2.7W 1.1W M474B1G73BH0-YK0 - - || - - - - - ECC UNB SODIMM : Not a standard product. Project-based support, close alignment with Samsung sales required Dedicated server, Hosting 4GB 2 1600 1,35 2Gb 30nm 2.5W 1.0W M474B5273DH0-YK0 - - || - - - - - 1 socket systems, 1600 speed 8GB 2 1600 1,35 4Gb 30nm 2.7W 1.1W M391B1G73BH0-YK0 is not needed. - - || - - - - - ECC UNB : Standard Product 4GB 2 1600 1,35 2Gb 30nm 2.5W 1.0W M391B5273DH0-YK0 - - || - - - - - Speed compatibility: Process Technology : 1600 speed is downward compatible with 1333, 1066 and 800. The speed is automatically identified by system The lower the number the more features come BIOS and adjusted in the system based on the number of DIMMs per Channel (DPC). The speed adjustment is with the parts. 1600 speed in combination with explained in the table above for each module category. Beyond the system adjustments, some platforms offer 1,35V is the main output of 30nm technology. the option of speed enforcing with BIOS to a desired level (normally lower). That is why Samsung does not ask for a premium. And we recommend to focus on one Voltage compatibility: part number per product density to reduce the 1,35V modules are upward compatible with 1,5V. i.e. a 1.35V Module will also work with a 1.5V setting. Many inventory, easier planning and importing to systems of INTEL EPSD, Supermicro etc allow the users to enforce and adjust the memory voltage on BIOS level. different plaforms and applications. In this sense it is advisable to source 1.35V modules since they allow you to use them also at 1.5V. The voltage is automatically identified by the system BIOS and adjusted in the system based on the number of DIMMs per Channel (DPC). you can recognize the process technology on Sourcing recommendation: the modues you use with hints on the Module In order to reduce the amount of part numbers, consequently reducing the inventory level and increasing the sticker. flexibility, Samsung recommends to generally use the 1600 1.35V parts. These parts come with no adder or G2 = 30nm; stands for Generation 2 of premium to other voltage and speed options, and they are downwards compatible through BIOS setting to the Samsung Green Products desired speed and voltage seeting of your application. (coampare with the table on the right) all data are subject to changes without notice, please conatct Samsung channel partner in your region for latest update © Samsung Semiconductor Europe Ver 13/ Feb 2013 Density Rank Speed Voltage 1600@1.35V 1600@1.5V 1333@1.35V 1333@1.5V 1066@1.35V 1066@1.5V 800@13.35V 800@1.5V Base Component Technology Node Power consumption at 100% loading* Power consumption at idle * Part Number