Manufacturers
ROHM EMH10T2R
Description
TRANS DUAL NPN 50V 100MA EMT6
Part Number
EMH10T2R
Price
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Manufacturer
ROHM
Lead Time
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Category
PRODUCTS - E
Datasheet
Extracted Text
EMH10 / UMH10N / IMH10A Transistors General purpose (dual digital transistors) EMH10 / UMH10N / IMH10A zzzzExternal dimensions (Units : mm) zzFeatures zz 1) Two DTC123J chips in a EMT or UMT or SMT EMH10 package. 2) Mounting possible with EMT3 or UMT3 or SMT3 ( ) (3) 4 (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminating interference. Each lead has same dimensions 4) Mounting cost and area can be cut in half. Abbreviated symbol : H10 ROHM : EMT6 zzzzStructure Epitaxial planar type UMH10N NPN silicon transistor (Built-in resistor type) 1.25 2.1 The following characteristics apply to both DTr1 and DTr2. 0.1Min. zzzzEquivalent circuit Each lead has same dimensions ROHM : UMT6 Abbreviated symbol : H10 EMH10 / UMH10N IMH10A EIAJ : SC-88 (3) (2) (1) (4) (5) (6) R1 R2 R1 R2 DTr1 DTr1 IMH10A DTr2 DTr2 R2 R2 R1 R1 (4) (5) (6) (3) (2) (1) R1=2.2kΩ R1=2.2kΩ R2=47kΩ R2=47kΩ 1.6 2.8 0.3to0.6 zzzzPackaging specifications Each lead has same dimensions Package Taping ROHM : SMT6 Abbreviated symbol : H10 Code T2R TN T110 EIAJ : SC-74 8000 3000 3000 Type Basic ordering unit (pieces) EMH10 − − UMH10N −− IMH10A −− 0.2 0.15 0.15 0.3 0.22 0.13 (5) ( ) ( ) (4) (5) 6 (6) 4 0to0.1 0to0.1 ( ) ( ) ( ) ( ) (1) 1 3 3 2 ( ) 2 0.5 0.5 0.65 0.65 1.0 0.8 0.95 0.95 0.7 0.5 1.6 1.9 1.1 0.9 1.3 2.9 2.0 EMH10 / UMH10N / IMH10A Transistors zzzzAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Supply voltage VCC 50 V 12 Input voltage VIN V −5 IO 100 mA Output current IC (Max.) 100 mA EMH10,UMH10N 150 (TOTAL) ∗1 Power Pd mW dissipation IMH10A 300 (TOTAL) 2 ∗ Storage temperature Tstg −55~+150 °C 1 120mW per element must not be exceeded. ∗ 2 200mW per element must not be exceeded. ∗ zzElectrical characteristics (Ta=25°C) zz Parameter Symbol Min. Typ. Max. Unit Conditions VI (off) − − 0.5 VCC=5V, IO=100μA Input voltage V VI (on) 1.1 − − VO=0.3V, IO=5mA Output voltage VO (on) − 0.1 0.3 V IO/II=5mA/0.25mA Input current II − − 3.6 mA VI=5V Output current IO (off) − − 0.5 μA VCC=50V, VI=0V DC current gain GI 80 − − − VO=5V, IO=10mA − 250 − MHz Transition frequency fT VCE=10mA, IE=−5mA, f=100MHz ∗ Input resistance R1 1.54 2.2 2.86 kΩ − Resistance ratio R2/R1 17 21 26−− Transition frequency of the device ∗ zzElectrical characteristic curves zz 100 10m 1k VO=0.3V VCC=5V VO=5V 5m 50 500 2m Ta=100°C 20 200 25°C 1m −40°C 500μ 10 100 Ta=100°C 5 200μ 50 25°C 100μ Ta=−40°C −40°C 2 25°C 20 50μ 100°C 1 10 20μ 500m 10μ 5 5μ 200m 2 2μ 100m 1μ 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m100m 0 0.5 1.0 1.5 2.0 2.5 3.0 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage current (ON characteristics) (OFF characteristics) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI EMH10 / UMH10N / IMH10A Transistors 1 lO/lI=20 500m 200m Ta=100°C 25°C 100m −40°C 50m 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current OUTPUT VOLTAGE : VO (on) (V)
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