EMB9 / UMB9N / IMB9A Transistors General purpose (dual digital transistors) EMB9 / UMB9N / IMB9A zFeatures zExternal dimensions (Unit : mm) 1) Two DTA144Ys in a EMT or UMT or SMT package. EMB9 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. (4) (3) (5) (2) 3) Transistor elements are independent, eliminating (6) (1) 1.2 interference. 1.6 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 zStructure Abbreviated symbol : B9 Epitaxial planar type UMB9N PNP silicon transistor (Built-in resistor type) 1.25 2.1 The following characteristics apply to both DTr1 and DTr2. 0.1Min. Each lead has same dimensions ROHM : UMT6 zEquivalent circuit EIAJ : SC-88 Abbreviated symbol : B9 EMB9 / UMB9N IMB9A (4) (5) (6) (3) (2) (1) IMB9A R1 R2 R1 R2 DTr1 DTr1 DTr2 DTr2 R1=10kΩ R1=10kΩ R2 R2 R1 R2=47kΩ R2=47kΩ R1 (3) (2) (1) 1.6 (4) (5) (6) 2.8 0.3to0.6 Each lead has same dimensions zAbsolute maximum ratings (Ta = 25°C) ROHM : SMT6 EIAJ : SC-74 Parameter Symbol Limits Unit Supply voltage VCC −50 V Abbreviated symbol : B9 −40 Input voltage VIN V 6 IO −70 Output current mA IC (Max.) −100 1 ∗ EMB9, UMB9N 150 (TOTAL) Power Pd mW dissipation 2 IMB9A ∗ 300 (TOTAL) Junction temperature Tj 150 ˚C Storage temperature Tstg −55 to +150 ˚C 1 120mW per element must not be exceeded. ∗ 2 200mW per element must not be exceeded. ∗ 1/2 0.15 0.3 0.2 0.15 0.13 0.22 (5) ( ) (5) (6) 4 ( ) ( ) 4 6 0to0.1 0to0.1 ( ) ( ) (1) 3 2 ( ) (3) 1 (2) 0.5 0.5 0.8 0.95 0.95 0.65 0.65 0.7 1.0 0.5 1.9 1.1 1.6 2.9 0.9 1.3 2.0 EMB9 / UMB9N / IMB9A Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Parameter Conditions VI (off) − − −0.3 VCC=−5V, IO=−100µA V Input voltage VI (on) −1.4 − − VO=−0.3V, IO=−1mA Output voltage VO (on) − −0.1 −0.3 V IO/II=−5mA/−0.25mA Input current II − − −0.88 mA VI=−5V IO (off) − − −0.5 µA Output current VCC=−50V, VI=0V DC current gain GI 68 − − − VO=−5V, IO=−5mA Transition frequency fT − 250 − MHz VCE=−10mA, IE=5mA, f=100MHz ∗ R1 7 10 13 kΩ Input resistance − Resistance ratio R2 / R1 3.7 4.7 5.7 − − Transition frequency of the device ∗ zPackaging specifications Package Taping Code T2R TN T148 Basic ordering 8000 3000 3000 Type unit (pieces) EMB9 UMB9N IMB9A zElectrical characteristic curves −100 −10m 1k VO=−0.3V VCC=−5V VO=−5V −5m −50 500 Ta=100˚C 25˚C −2m −40˚C 200 −20 −1m −10 −500µ 100 Ta=100˚C −5 −200µ 50 Ta=−40˚C 25˚C 25˚C −100µ −40˚C −2 100˚C 20 −50µ −1 10 −20µ −10µ −500m 5 −5µ −200m 2 −2µ −100m 1 −1µ −100µ −200µ− −500µ− −1m 2m 5m −10m −20m −50m −100m 0 −0.5 −1 −1.5 −2 −2.5 −3 −100µ− −200µ− −500µ− 1m 2m 5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output (ON characteristics) (OFF characteristics) current −1000m lO/lI =20 −500m Ta=100˚C −200m 25˚C −40˚C −100m −50m −20m −10m −5m −2m −1m −100µ −200µ− −500µ− −1m 2m 5m −10m −20m −50m−100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current 2/2 OUTPUT VOLTAGE : VO (on) (V) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI