ROHM DTD133HKT146
Description
TRANS NPN 50V 500MA SOT-346 TR
Part Number
DTD133HKT146
Price
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Manufacturer
ROHM
Lead Time
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Category
PRODUCTS - D
Datasheet
Extracted Text
DTD133H Transistors Digital transistors (Includes resistors) DTD133H !!!!External dimensions (Units : mm) !!Features !! 1) A built-in bias resistor allows inverter circuit configuration DTD133HK without external resistors for input (see equivalent circuit diagram). 2) The bias resistor consists of a thin-film resistor which is completely isolated, providing the capability to negative-bias the 1.6 2.8 input, and avoiding parasitic effects. 3) Operation starts by simply setting On/Off conditions, simplifying the design of equipment using the transistors. 0.3to0.6 Each lead has same dimensions 4) High packing density. ROHM : SMT3 (1) GND EIAJ : SC-59 (2) IN (3) OUT !!!!Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit DTD133HS Supply voltage VCC 50 V 42 Input voltage VI −6~+20 V Output current IC 500 mA DTD133HK 200 Power Pd mW dissipation DTD133HS 300 0.45 Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C 2.5 0.5 0.45 5 ( ) ( ) ( ) 1 2 3 Taping specifications (1) GND ROHM : SPT EIAJ : SC-72 (2) OUT (3) IN !!!!Equivalent circuit !!!!Package, marking, and packaging specifications Part No. DTD133HK DTD133HS R1 OUT IN Package SMT3 SPT R2 Marking G08 - GND Packaging code T146 TP Basic ordering unit (pieces) 3000 5000 IN OUT GND !!Electrical characteristics (Ta=25°C) !! Parameter Symbol Min. Typ. Max. Unit Conditions − − 0.5 V VI(off) VCC=5V , IO=100µA Input voltage VI(on) 2.0 −− V VO=0.3V , IO=20mA Output voltage VO(on) − 0.1 0.3 V IO=50mA , II=2.5mA Input current II − − 2.4 mA VI=5V Output current IO(off) − − 0.5 µA VCC=50V , VI=0V DC current gain GI IO=50mA , VO=5V 56 − − − Input resistance R1 − 3.3 − kΩ − Resistance ratio R2/R1 2.4 3.0 3.7 − − Transition frequency fT − 200 − MHz VCE=10V , IE=−5mA , f=100MHz ∗ ∗Transition frequency of the device. 1/2 0.4 ( ) 15Min. 3 0.15 ( ) 3 3Min. 0to0.1 ( ) ( ) 2 1 0.8 0.95 0.95 1.9 1.1 2.9 DTD133H Transistors !!!!Electrical characteristics curves 100 10m 1k VO=0.3V VCC=5V VO=5V 5m 50 500 2m Ta=100˚C Ta=100˚C 20 200 25˚C 1m 25˚C −40˚C −40˚C 10 500µ 100 Ta=−40˚C 5 200µ 50 25˚C 100µ 100˚C 2 50µ 20 1 20µ 10 10µ 500m 5 5µ 200m 2 2µ 1µ 100m 1 0 0.5 1.0 1.5 2.0 2.5 3.0 500µ 1m 2m 5m 10m 20m 50m 100m200m 500m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output current (ON characteristics) (OFF characteristics) characteristics 1 lO / lI=20 500m 200m 100m 50m Ta=100˚C 20m 25˚C 10m −40˚C 5m 2m 1m 500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current characteristics 2/2 OUTPUT VOLTAGE : VO (on) (V) INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : Io (A) DC CURRENT GAIN : GI
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