2SC5881
Transistors
Power transistor (60V, 5A)
2SC5881
!!!!External dimensions (Unit : mm)
!!Features
!!
1) High speed switching. 1.5
5.5
CPT3
(Tf : Typ. : 25ns at IC = 5A)
(SC-63)
2) Low saturation voltage, typically
: 0.9
(Typ. 200mV at IC = 3.0A, IB = 300mA)
C0.5
3) Strong discharge power for inductive load and
capacitance load.
(1) Base
1.5
0.8Min.
4) Complements the 2SA2096
2.5
9.5
(2) Collector
(x1 / 2)
(3) Emitter
Each lead has same dimensions
Symbol : C5881
!Applications
Low frequency amplifier
High speed switching
!!!!Structure
NPN Silicon epitaxial planar transistor
!!!!Packaging specifications
Package Taping
TL
Type Code
Basic ordering unit (pieces) 2500
2SC5881
!!Absolute maximum ratings (Ta=25°C)
!!
Parameter Symbol Limits Unit
Collector-base voltage VCBO 100 V
VCES 100 V
Collector-emitter voltage
VCEO 60 V
VEBO V
Emitter-base voltage 6.5
DC IC A
5.0
Collector current
∗1
Pulsed ICP A
10.0
∗2
W
1.0
Power dissipation PC
∗3
10.0 W
Junction temperature Tj 150 °C
Tstg °C
Range of storage temperature −55 to 150
∗1 Pw=10ms, non repetitive pulse
∗2 Ta=25°C
∗3 Tc=25°C
1/3
1.0
(3) (1)
0.5 (2)
2.3 2.3
0.9
0.65
0.75
0.5
2.3 5.1
6.5
2SC5881
Transistors
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Condition
BVCEO 60 − − V IC=1mA
Collector-emitter breakdown voltage
BVCES − V
100 − IC=100µA
BVCBO − V
Collector-base breakdown voltage 100 − IC=100µA
Emitter-base breakdown voltage BVEBO 6.5 − − V IE=100µA
Collector cut-off current ICBO − − 1.0 µA VCB=40V
IEBO 1.0 µA
Emitter cut-off current − − VEB=4V
∗1
IC=3.0A
Collector-emitter saturation voltage VCE (sat) − 200 400 mV
IB=300mA
VCE=2V
hFE 560 −
DC current gain 120 −
IC=100mA
∗1
VCE=10V
Transition frequency fT − 160 − MHz IE= −100mA
f=10MHz
VCB=10V
Corrector output capacitance Cob − 30 − pF IE=0mA
f=1MHz
IC=5A ∗2
Ton − ns
Turn-on time − 70
IB1=500mA
Storage time Tstg − 150 − ns
IB2= −500mA
Fall time Tf − 25 − ns VCC 25V
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
!!!!hFE RANK
Q R S
120−270 180−390 270−560
!!!!Electrical characteristic curves
1000 1000
100
Tstg Ta=25°C VCE=2V
VCC=25V
IC / IB=10 / 1
10
100ms 100
Ta=125°C
Ton
10ms
Ta=25°C
1ms
Ta= −40°C
500µs
1 100
Tf
DC
10
0.1
Single
non repetitive
Pulsed
1
0.01 10
0.01 0.1 1 10 100 0.01 0.1 1 10 0.001 0.01 0.1 1 10
COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Fig.1 Safe Operating Area Fig.2 Switching Time
Collector Current (Ι)
1000
10 10
Ta=25°C
IC / IB=10 / 1 Ta=25°C
100
1 1
VCE=5V
VCE=3V
VCE=2V
IC / IB=20 / 1
IC / IB=10 / 1
Ta=125°C
10
0.1 Ta=25°C 0.1
Ta= −40°C
1 0.01 0.01
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs. Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
Collector Current (ΙΙ) Voltage vs. Collector Current (ΙΙ)
2/3
DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
SWITCHING TIME : (ns)
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
DC CURRENT GAIN : hFE
2SC5881
Transistors
10 10 1000
Ta=25°C
IC / IB=10 / 1 VCE=2V
VCE=10V
1 100
Ta=125°C
Ta=25°C
1
Ta= −40°C
0.1 10
Ta=125°C
Ta=25°C
Ta= −40°C
0.1 0.01 1
0.001 0.01 0.1 1 10 0 0.5 1 1.5 0.001 0.01 0.1 1 10
COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A)
Fig.7 Base-Emitter Saturation Fig.8 Grounded Emitter Fig.9 Transition Frequency
Voltage vs. Collecter Current Propagation Characteristics
1000
Ta=25°C
f=1MHz
100
10
1
0.1 1 10 100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
!!!!Switching characteristics measurement circuits
RL=5Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle ≤ 1%
IB1
IB2
Base current
waveform
90%
IC
Collector current 10%
waveform
Ton Tstg Tf
3/3
COLLECTOR OUTPUT BASE EMITTER SATURATION
CAPACITANCE : Cob (pF) VOLTAGE : VBE (sat) (V)
COLLECTOR CURRENT : IC (A)
TRANSITION FREQUENCY : fT (MHz)
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