0.057 .014 0.236 0.252 RF2103P MEDIUM POWER LINEAR AMPLIFIER 2 Typical Applications • Digital Communication SystemsPortable Battery-Powered Equipment Spread-Spectrum Communication SystemsCommercial and Consumer Systems 2 Driver for Higher Power Linear ApplicationsBase Station Equipment Product Description 0.156 0.148 The RF2103P is a medium power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in 0.347 0.339 UHF radio transmitters operating between 450MHz and 0.050 1000MHz. It may also be used as a driver amplifier in higher power applications. The device is self-contained with the exception of the output matching network, power supply feed line, and bypass capacitors, and it produces an output power level of 750mW (CW). The device can 8° MAX 0° MIN be used in 3 cell battery applications. The maximum CW output at 3.6V is 175mW. The unit has a total gain of 0.0500 0.010 31dB, depending upon the output matching network. 0.0164 0.007 Optimum Technology Matching® Applied Package Style: SOIC-14 Si BJT GaAs HBT GaAs MESFET � Si Bi-CMOS SiGe HBT Si CMOS Features 450MHz to 1000MHz Operation Up to 750mW CW Output Power RF IN 1 14 RF OUT31dB Small Signal Gain PRE FPA AMP Single 2.7V to 7.5V Supply GND 2 13 RF OUT 47% Efficiency GND 3 12 GND Digitally Controlled Power Down Mode PD 4 11 GND BIAS CIRCUITS VCC1 5 10 GND Ordering Information VCC2 6 9 RF OUT RF2103P Medium Power Linear Amplifier PRE AMP PWR 7 8 RF OUT RF2103P PCBA Fully Assembled Evaluation Board RF Micro Devices, Inc. Tel (336) 664 1233 Functional Block Diagram 7628 Thorndike Road Fax (336) 664 0454 Greensboro, NC 27409, USA http://www.rfmd.com Rev B1 010720 2-1 0. 010 0.004 .018 0.059 POWER AMPLIFIERS RF2103P Absolute Maximum Ratings Parameter Rating Unit Supply Voltage -0.5 to +7.5 V DC Caution! ESD sensitive device. Power Down Voltage (V)-0.5to+5 V PD DC Supply Current 350 mA RF Micro Devices believes the furnished information is correct and accurate Input RF Power +12 dBm at the time of this printing. However, RF Micro Devices reserves the right to Output Load VSWR 10:1 make changes to its products without notice. RF Micro Devices does not 2 assume responsibility for the use of the described product(s). Operating Case Temperature -40 to +100 °C Operating Ambient Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Specification Parameter Unit Condition Min. Typ. Max. T=25°C, V =5.8V, V =5.0V, CC PD Overall Z =18Ω,P =0dBm, Freq=915MHz LOAD IN Frequency Range 450 to 1000 MHz Maximum Output Power +28.8 dBm V =7.5V CC Maximum Output Power +26.5 dBm V =5.8V CC Second Harmonic -24 dBc Without external second harmonic trap Third Harmonic -30 dBc Output Noise Power <-125 dBm/Hz Input Impedance 50 Ω With external matching network; see appli- cation schematic Input VSWR <2:1 With external matching network; see appli- cation schematic Output Impedance 18+j0 Ω Load Impedance for Optimal Match V =5.8V, V =4.0V, Z =18Ω, Nominal 5.8V CC PD LOAD P =0dBm, Freq=830MHz Configuration IN Linear Power Gain 31 dB Saturated CW Output Power 24 +26.5 dBm IM -40 -25 dBc P =+18.5dBm/tone 3 OUT -45 -30 dBc P =+18.5dBm/tone IM 5 OUT Collector Current, I 175 250 mA Total of pins 7 and 8 CC V Current <3.5 mA Into pin 4 PD CW Total Efficiency 47 % Two Tone Total Efficiency 26 % P =+18.5dBm/tone OUT Power Supply Power Supply Voltage 2.7 to 7.5 V Power Supply Idle Current 45 80 mA Total "OFF" Current Drain 1 10 μ V <0.1V A PD DC Turn-on Time <100 ns V =0 to V =+4V PD PD DC 2-2 Rev B1 010720 POWER AMPLIFIERS RF2103P Pin Function Description Interface Schematic RF input pin. There is an internal blocking capacitor between this pin 1RFIN and the preamp input, but not between the pin and an internal 2kΩ resistor to ground. Ground connection. For best performance, keep traces physically short 2GND and connect immediately to ground plane. Same as pin 2. 3GND 2 Power down control voltage. When this pin is at 0V, the device will be in 4PD power down mode, dissipating minimum DC power. When this pin is at V (3V to 6.5V), the device will be in full power mode delivering maxi- CC mum available gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and V . It is not optimized for this function so CC the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control; however, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than V . CC This pin should also have an external bypassing capacitor. Positive supply for the active bias circuits. This pin can be externally 5VCC1 combined with pin 6 (VCC2) and the pair bypassed with a single capac- itor, placed as close as possible to the package. Additional bypassing μ of 1 F is also recommended, but proximity to the package is not as crit- μ ical. In most applications, pins 5, 6, and 7 can share a single 1 F bypass capacitor. Same as pin 5. 6VCC2 Positive supply for the pre-amplifier. This is an unmatched transistor 7PREAMP collector output. This pin should see an inductive path to AC ground PWR (V with bypass capacitor). This inductance can be achieved with a CC short, thin microstrip line or with a low value chip inductor (approxi- mately 1.8nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and V should be bypassed with a CC larger bypass capacitor. This inductance forms a matching network with the internal series capacitor between the two amplifier stages, set- ting the amplifier’s frequency of maximum gain. An additional 1μF bypass capacitor in parallel with the 100pF bypass capacitor is also recommended, but placement of this component is not as critical. In most applications, pins 5, 6, and 7 can share a single 1μF bypass capacitor. Same as pin 14. 8RFOUT Same as pin 14. 9RFOUT Same as pin 2. 10 GND Same as pin 2. 11 GND Same as pin 2. 12 GND Same as pin 14. 13 RF OUT Rev B1 010720 2-3 POWER AMPLIFIERS RF2103P Pin Function Description Interface Schematic Amplifier RF output. This is an unmatched collector output of the final 14 RF OUT amplifier transistor. It is internally connected to pins 8, 9, 13 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these four pins. Typically, pins 8 and 9 are connected to a network that provides the DC bias and also creates a second har- monic trap. For 915MHz operation, this harmonic trap network is simply 2 a single 2pF capacitor from both pins to ground. This capacitor series resonates with internal bond wires at two times the operating fre- quency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier’s maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that pre- sents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Shunt protec- tion diodes are included to clip peak voltage excursions above approxi- mately 15V to prevent voltage breakdown in worst case conditions. Application Schematic 6.8 nH 22 Ω RF IN RF OUT 1 14 FPA PRE AMP C1 12 nH L1 2 13 3 12 For lower frequency 100 pF V B operation: Cut trace 4 11 on board and insert V BIAS CC inductor L3 CIRCUITS For lower frequency 5 10 1 100 operation: Cut trace μF pF V on board and insert CC 6 9 inductor L4 L2 7 8 .01" x .2" 100 pF C2 330 pF (PCB material: FR-4, Thickness:0.031") FREQUENCY (MHz) L1 (nH) L2 (nH) L3 (nH) L4 (nH) C1 (pF) C2 (pF) 275 20 15 10 20 20 10 480 12 6.8 4.7 18 12 6.8 915 6.8 3.3 4 2 2-4 Rev B1 010720 POWER AMPLIFIERS RF2103P Evaluation Board Schematic 915MHz Operation (Download Bill of Materials from www.rfmd.com.) 2 P1 C6 C8 1nF 1nF P1-1 1 VCC 2 GND P1-3 3 VB 2103400 Rev C SMA L4 R1 50 Ω Matching Network J1 6.8 nH 50 Ω μ strip 22 Ω RF IN 1 14 PRE FPA AMP L3 50 Ω μ strip RF OUT 12 nH 2 13 J2 C4 L1 4pF 6.8 nH 3 12 C1 100 pF P1-3 4 11 BIAS CIRCUITS P1-1 5 10 L2 C2 C3 3.3 nH 100 pF 100 pF P1-1 6 9 C7 C5 2pF 330 pF P1-1 7 8 C9 C10 0.01" x 0.2" 100 pF 100 pF (PCB mat'l: FR-4, Thickness: 0.031") Rev B1 010720 2-5 POWER AMPLIFIERS RF2103P Evaluation Board Layout 1.4” x 1.4” 2 2-6 Rev B1 010720 POWER AMPLIFIERS RF2103P Gain and Pout vs. Pin Efficiency and Icc vs. Pout Vcc=Vb=3.6 V, 915 MHz Vcc=Vb=3.6 V, 915 MHz 35 75 260 Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) 30 60 210 25 2 45 160 20 15 30 110 10 15 60 Pout (+25°C) Gain (+25°C) 5 Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) 0 0 10 -25 -20 -15 -10 -5 0 5 0 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Gain and Pout vs. Pin Efficiency and Icc vs. Pout Vcc=Vb=4.8 V, 915 MHz Vcc=Vb=3.6 V, 915 MHz 75 260 35 Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) 30 60 210 25 45 160 20 15 30 110 10 15 60 Pout (+25°C) Gain (+25°C) 5 Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) 0 0 10 -25 -20 -15 -10 -5 0 5 0 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Gain and Pout vs. Pin Efficiency and Icc vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz Vcc=6.0 V, Vb=5.0 V, 915 MHz 35 75 260 Eff (+25°C) Eff (-40°C) Eff (+85°C) Icc (+25°C) Icc (-40°C) Icc (+85°C) 30 60 210 25 45 160 20 15 30 110 10 15 60 Pout (+25°C) Gain (+25°C) 5 Pout (-40°C) Gain (-40°C) Pout (+85°C) Gain (+85°C) 0 0 10 -25 -20 -15 -10 -5 0 5 0 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Rev B1 010720 2-7 Gain (dB), Pout (dBm) Gain (dB), Pout (dBm) Gain (dB), Pout (dBm) Efficiency (%) Efficiency (%) Efficiency (%) Icc (mA) Icc (mA) Icc (mA) POWER AMPLIFIERS RF2103P IM3, IM5, and IM2 vs. Pout Harmonics vs. Pout Vcc=Vb=3.6 V, 915 MHz Vcc=Vb=3.6 V, 915 MHz 0 0 IM3 2Fo 3Fo 4Fo IM5 -10 -10 5Fo 6Fo 7Fo IM2 -20 -20 2 -30 -30 -40 -40 -50 -50 -60 -60 -15 -10 -5 0 5 10 15 20 25 5 10 1520 2530 Pout per Tone (dBm) Fundamental Pout (dBm) IM3, IM5, and IM2 vs. Pout Harmonics vs. Pout Vcc=Vb=4.8 V, 915 MHz Vcc=Vb=4.8 V, 915 MHz 0 0 IM3 2Fo 3Fo 4Fo IM5 -10 -10 5Fo 6Fo 7Fo IM2 -20 -20 -30 -30 -40 -40 -50 -50 -60 -60 -15 -10 -5 0 5 10 15 20 25 5 10 1520 2530 Pout per Tone (dBm) Fundamental Pout (dBm) IM3, IM5, and IM2 vs. Pout Harmonics vs. Pout Vcc=6.0 V, Vb=5.0 V, 915 MHz Vcc=6.0 V,Vb=5.0 V, 915 MHz 0 0 IM3 2Fo 3Fo 4Fo -10 IM5 -10 5Fo 6Fo 7Fo IM2 -20 -20 -30 -30 -40 -40 -50 -50 -60 -60 -15 -10 -5 0 5 10 15 20 25 5 10 1520 2530 Pout per Tone (dBm) Fundamental Pout (dBm) 2-8 Rev B1 010720 POWER AMPLIFIERS Intermodulation Products (dBc) Intermodulation Products (dBc) Intermodulation Products (dBc) Harmonic Level (dBc) Harmonic Level (dBc) Harmonic Level (dBc) RF2103P Pout vs. Vb Efficiency vs. Vb Vcc=3.6 V, Pin=0 dBm, 915 MHz Vcc=3.6 V, Pin=0 dBm, 915 MHz 30 75 +25°C +25°C 20 -40°C -40°C 60 +85°C +85°C 10 2 45 0 30 -10 15 -20 -30 0 0.01.0 2.03.0 4.05.0 0.01.0 2.03.0 4.05.0 Vb (Volts) Vb (Volts) Pout vs. Vb Efficiency vs. Vb Vcc=4.8 V, Pin=0 dBm, 915 MHz Vcc=4.8 V, Pin=0 dBm, 915 MHz 75 30 +25°C +25°C 20 -40°C -40°C 60 +85°C +85°C 10 45 0 30 -10 15 -20 -30 0 0.01.0 2.03.0 4.05.0 0.01.0 2.03.0 4.05.0 Vb (Volts) Vb (Volts) Pout vs. Vb Efficiency vs. Vb Vcc=6.0 V, Pin=0 dBm, 915 MHz Vcc=6.0 V, Pin=0 dBm, 915 MHz 30 75 +25°C +25°C 20 -40°C -40°C 60 +85°C +85°C 10 45 0 30 -10 15 -20 -30 0 0.01.0 2.03.0 4.05.0 0.01.0 2.03.0 4.05.0 Vb (Volts) Vb (Volts) Rev B1 010720 2-9 Pout (dBm) Pout (dBm) Pout (dBm) Efficiency (%) Efficiency (%) Efficiency (%) POWER AMPLIFIERS RF2103P Psat vs. Vcc Two Tone Pout vs. Pin, Vb=Vcc; Vb≤ ≤5.0 V, 915 MHz 915 MHz ≤ ≤ 30 35 30 25 25 20 2 20 15 15 10 10 Vcc=Vb=3.6V 5 5 Vcc=Vb=4.8V Vcc=6.0V, Vb=5.0V 0 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -25 -20 -15 -10 -5 0 5 Vcc (Volts) Pin, per Tone (dBm) Vb Required to Achieve Specific Pout Two Tone Efficiency and Icc vs. Pout, (Vb<5.0 V, 915 MHz) 915 MHz 5 100 260 Eff (Vcc=Vb=3.6V) 27dBm Eff (Vcc=Vb=4.8V) 24dBm Eff (Vcc=6.0V, Vb=5.0V) 4 21dBm 80 210 Icc (Vcc=Vb=3.6V) 18dBm Icc (Vcc=Vb=4.8V) 15dBm Icc (Vcc=6.0V, Vb=5.0V) 3 60 160 2 40 110 1 20 60 0 0 10 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 5 10 15 20 25 30 Vcc (Volts) Pout, per Tone (dBm) 2-10 Rev B1 010720 POWER AMPLIFIERS Vb (Volts) Psat (dBm) Two Tone Efficiency (%) Pout, per Tone (dBm) Two Tone Icc (mA)