2.0–0.3 Unit : mm DN6848 4.5–0.3 1.0 DN6848/SE/TE/S – Hall IC (Operating Temperature Range 5˚ Topr = – 40 to +100˚C, Operating in Alternative Magnetic Field) – 0.8–0.1 nOverview + 0.1 0.5–0.1 0.43 – 0.05 The DN6848/SE/TE/S is a combination of a Hall element, 1.27 amplifier, Schmitt circuit, and stabilized power supply/temper- 12 3 1 : V CC 5˚ 5˚ 2 : GND ature compensator integrated on an identical chip by using the 3 : Output IC technology. It amplifies Hall element output at the amplifi- 2˚ 2˚ SSIP003-P-0000A (E-3S) er, converts into a digital signal through the Schmitt circuit, Unit : mm DN6848SE 4.52–0.3 and drives the TTL or MOS IC directly. – nFeatures 45˚ • High sensitivity and low drift • Stable temperature characteristics due to the additional tem- 0.55–0.15 perature compensator • Wide operating supply voltage range (V =4.5 to 16V) CC– • Operating in alternative magnetic field (0.72) • TTL and MOS ICs directly drivable by output • Output open collector 0.4–0.1 (0.4) 1.27 2 to 5˚ 1.54–0.1 12 3nApplications • Speed sensors 1 : V CC 2˚ R0.25 2 : GND • Position sensors SSIP003-P-0000 (SE-3S) 3 : Output • Rotation sensors Unit : mm DN6848TE • Keyboard switches (0.7) 4.0–0.3 • Microswitches Note) This IC is not suitable for car electrical equipments. – – 0.6–0.15nBlock Diagram · DN6848/SE/TE 0.5–0.1 1.2–0.1 1.27 (0.2) 12 3 Stabilized Power Supply 1 V CC Temperature Correction Circuit 1 : VCC 2 : GND SSIP003-P-0000B (TE-3S) 3 : Output 3 Output Unit : mm DN6848S 1 4 2 GND Hall Element Amp. Schmitt Trigger Output Stage– 2 3 – – · DN6848S NC Stabilized Power Supply 1–V CC 2 Temperature Correction Circuit or GND 0.3 to 0.5 3 Output – 3.0–0.3 5.4–0.4 1 : VCC 2 : NC or GND 4 GND 3 : Output Hall Element Amp. Schmitt Trigger Output Stage ESOP004-P-0200 (SOH-4D) 4 : GND 0.6 0.2 (1.0) (1.0) (1.0) (1.0) 10.5 0.5 4.0 0.3 10.0 0.6 12.5 06.5 3.3 0.3 4.52 0.3 0.7 (0.6) 1.6 2˚ 0.15 0 to 0.1 0.95 0.2 0.4 0.2 1.5 0.3 3.0 0.3 1.0 n Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Rating Unit Supply voltage V 18 V CC Supply current ICC 8 mA Circuit current I 20 O mA Power dissipation P 150 mW D Operating ambient temperature T –40 to +100 ˚C opr Storage temperature Tstg –55 to +125 ˚C n Electrical Characteristics (Ta=25˚C) Parameter Symbol Condition min typ max Unit B V =12V 0.5 9 21 mT 1 (L to H) CC Operating flux density B V =12V 1.5 11 22 mT 2 (H to L) CC Hysteresis width BW V =12V 1 2 mT CC V =16V, I =12mA, CC O 0.4 V B=22mT Low output voltage V OL V =4.5V, I =12mA, CC O 0.4 V B=22mT V =4.5 to 16V CC High output current I 10 μA OH VO=16V, B=0mT V =16V 6 mA CC Supply current I CC V =4.5V 5.5 mA CC nHall Element Position 1.0 1.75 1.0 1.63 1.0 1.5 Unit : mm The center of the Hall element is in the hatched area in the right figure. 1.5 DN6848 DN6848SE DN6848TE DN6848S Distance from package surface to sensor (mm) 0.7 0.42 0.4 0.65 nFlux-Voltage Conversion Characteristics Marking surface B1 B2 Applied flux direction Flux density (B) 1.0 1.0 1.3 1.0 Output voltage (V ) O 1.25 1.0 1.15 1.5 Sample 2 Sample 4 n Precaution on Use 1. Change of the operation magnetic flux density does not depend on the supply voltage, because the stabilization power supply is built-in. (only for the range ; V = 4.5 to 16V) CC 2. Change from “H” to “L” level increases the supply current by approx. 1mA. nCharacteristics Curve Supply voltage – Ambient temperature Operating flux density – Ambient temperature Operating flux density – Supply voltage 8 25.0 20.0 VCC = 4.5 to 16V Ta =25˚C 22.5 BH→L 7 17.5 20.0 6 15.0 17.5 5 12.5 15.0 V = 16V CC 12.5 4 10.0 VCC = 4.5V 10.0 3 7.5 7.5 2 5.0 5.0 1 2.5 2.5 0 0 –50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100 0 2 4 6 8 10 12 14 16 18 20 Ambient temperature (˚C) Ambient temperature (˚C) Supply voltage (V) Output low level voltage – Ambient temperature 100 VCC =12V 90 IO =12mA 80 70 60 50 40 30 20 10 0 –50 –25 0 25 50 75 100 125 Ambient temperature (˚C) Sample 3 Sample 1 Output “L” level voltage (mV) Supply current (mA) Operating flux density (mT) Operating flux density (mT)