Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 2.9±0.2 ■ Features φ 3.2±0.1 • High forward current transfer ratio h which has satisfactory lin- FE earity • Low collector-emitter saturation voltage V CE(sat) • Full-pack package which can be installed to the heat sink with one screw 1.4±0.2 2.6±0.1 1.6±0.2 ■ Absolute Maximum Ratings T = 25°C C 0.8±0.1 0.55±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V 80 V CBO 2.54±0.30 5.08±0.50 Collector-emitter voltage (Base open) V 80 V CEO 12 3 1: Base Emitter-base voltage (Collector open) V 6V EBO 2: Collector 3: Emitter Collector current I 3A C TO-220D-A1 Package Peak collector current I 5A CP P 20 W Collector power C dissipation T = 25°C 2.0 a Junction temperature T 150 °C j Storage temperature T −55 to +150 °C stg ■ Electrical Characteristics T = 25°C ± 3°C C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = 30 mA, I = 080 V CEO C B Base-emitter voltage V V = 4 V, I = 3 A 1.8 V BE CE C Collector-emitter cutoff current (E-B short) I V = 70 V, V = 0 100 µA CES CE BE Collector-emitter cutoff current (Base open) I V = 70 V, I = 0 100 µA CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 01 mA EBO EB C * Forward current transfer ratio h V = 4 V, I = 1 A 70 250  FE1 CE C h V = 4 V, I = 3 A 10 FE2 CE C Collector-emitter saturation voltage V I = 3 A, I = 0.375 A 0.7 V CE(sat) C B Transition frequency f V = 10 V, I = 0.5 A, f = 10 MHz 30 MHz T CE C Turn-on time t 0.5 µs I = 1 A, I = 0.1 A, I = − 0.1 A on C B1 B2 Storage time t V = 50 V 4.5 µs stg CC Fall time t 0.5 µs f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q P h 70 to 150 120 to 250 FE1 Publication date: April 2003 SJD00276BED 1 13.7±0.2 15.0±0.5 4.2±0.2 Solder Dip 3.0±0.5 2SD2549 P  T I  V I  V C a C CE C BE 30 8 8 (1)T =Ta C TC=25˚C Ta=25˚C (2)With a 100×100×2mm Al heat sink 25 (3)Without heat sink (PC=2W) 6 6 (1) 20 90mA 15 4 80mA 4 IB=100mA 70mA 60mA 50mA 40mA 10 (2) 30mA 2 2 20mA 5 10mA (3) 0 0 0 0 40 80 120 16001 21 48 602 0 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature T (°C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V  I h  I Safe operation area CE(sat) C FE C 3 10 10 Ta=25˚C Ta=25˚C Non repetitive pulse T =25˚C C 10 1 I CP 2 10 IC t=1ms −1 10 t=10ms 1 t=1s 1 10 −2 10 0.1 −3 10 1 −2 −1 −2 −1 10 10 110 10 10 110 1 10 100 Collector current I (A) Collector current I (A) Collector-emitter voltage V (V) C C CE R  t th 2 10 (1) (2) 10 1 Note: Rth was measured at Ta=25˚C and under natural convection. (1)PT=10V×0.2A(2W) and without heat sink (2)P =10V×0.8A(8W) and with a 100×100×2mm Al heat sink T −1 2 3 10 1 10 10 10 Time t (s) 2 SJD00276BED Thermal resistance R (°C/W) th Collector-emitter saturation voltage V (V) Collector power dissipation P (W) CE(sat) C Forward current transfer ratio h Collector current I (A) FE C Collector current I (A) Collector current I (A) C C Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. 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