Power Transistors 2SA0914 (2SA914) Silicon PNP epitaxial planar type Unit: mm +0.5 8.0 –0.1 3.2±0.2 For audio system/pli drive φ 3.16±0.1 Complementary to 2SC1953 ■ Features • A complementary pair with 2SC1953, is optimum for the pre- driver stage of a 60 W to 100 W output amplifier • TO-126B package which requires no insulation plate for instal- lation to the heat sink ■ Absolute Maximum Ratings T = 25°C C 0.75±0.1 0.5±0.1 0.5±0.1 1.76±0.1 Parameter Symbol Rating Unit 4.6±0.2 2.3±0.2 Collector to base voltage V −150 V CBO 1: Emitter Collector to emitter voltage V −150 V 2: Collector 123 CEO 3: Base Emitter to base voltage V −5V EBO TO-126B-A1 Package Collector current I −50 mA C Peak collector current I −100 mA CP Collector power dissipation P 1.2 W C Junction temperature T 150 °C j Storage temperature T −55 to +150 °C stg ■ Electrical Characteristics T = 25°C ± 3°C C Parameter Symbol Conditions Min Typ Max Unit Collector to emitter voltage V I = −100 µA, I = 0 −150 V CEO C B Emitter to base voltage V I = −10 µA, I = 0 −5V EBO E C Collector cutoff current I V = −100 V, I = 0 −1 µA CBO CB E * DC current gain h V = −5 V, I = −10 mA 130 330 FE CE C Collector to emitter saturation voltage V I = −30 mA, I = −3 mA −1V CE(sat) C B Transition frequency f V = −10 V, I = 10 mA, f = 200 MHz 70 MHz T CB E Collector output capacitance C V = −10 V, I = 0, f = 1 MHz 5 pF ob CB E Note) * h Rank classification FE Rank R S h 130 to 220 185 to 330 FE Note) The part number in the parenthesis shows conventional part number. Publication date: June 2002 SJD00005AED 1 1.9±0.1 3.8±0.3 16.0±1.0 11.0±0.5 3.05±0.1 2SA0914 P  T I  V I  V C a C CE C BE −120 1.6 −80 V = −5 V CE T = 25°C C −450 µA −70 25°C −400 µA −100 T = 100°C −25°C I = −500 µA C B −350 µA 1.2 −60 −300 µA −80 −250 µA −50 0.8 −40 −60 −200 µA −30 −150 µA −40 0.4 −100 µA −20 −20 −10 −50 µA 0 0 0 0 20 40 60 80 100 120 140 160 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 0 −2 −4 −6 −8 −10 −12 ( ) Ambient temperature T (°C) Collector to emitter voltage V (V) Base to emitter voltage V V a CE BE V  I h  I f  I CE(sat) C FE C T E −100 300 600 I / I = 10 C B V = −10 V CB V = −5 V CE f = 100 MHz −30 T = 25°C C 250 500 −10 T = 100°C 400 C 200 −3 −1 150 300 25°C − 0.3 25°C 100 200 −25°C T = 100°C C − 0.1 −25°C 50 100 − 0.03 − 0.01 0 0 − 0.1 − 0.3 −1 −3 −10 −30 −100 − 0.1 − 0.3 −1 −3 −10 −30 −100 133 100 100 (m ) Collector current I A Emitter current I (mA) Collector current I (mA) C E C C  V ob CB 6 I = 0 E f = 1 MHz T = 25°C C 5 4 3 2 1 0 −1 −3 −10 −30 −100 ( ) Collector to base voltage V V CB 2 SJD00005AED ( ) ( ) Collector output capacitance C pF Collector to emitter saturation voltage V V Collector power dissipation P (W) ob CE(sat) C DC current gain h ( ) FE Collector current I A C ( ) Transition frequency f MHz T Collector current I (mA) C Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Govern- ment if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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