Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm +0.5 8.0 –0.1 3.2±0.2 For low-frequency power amplification φ 3.16±0.1 Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings T = 25°C a 0.75±0.1 0.5±0.1 Parameter Symbol Rating Unit 0.5±0.1 1.76±0.1 4.6±0.2 2.3±0.2 Collector-base voltage (Emitter open) V −45 V CBO 1: Emitter Collector-emitter voltage (Base open) V −35 V 2: Collector CEO 123 3: Base Emitter-base voltage (Collector open) V −5V EBO TO-126B-A1 Package Collector current I −1A C Peak collector current I −1.5 A CP P 1.2 W Collector power dissipation C * 5.0 Junction temperature T 150 °C j Storage temperature T −55 to +150 °C stg Note) : With a 100 × 100 × 2 mm Al heat sink * ■ Electrical Characteristics T = 25°C ± 3°C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = −10 µA, I = 0 −45 V CBO C E Collector-emitter voltage (Base open) V I = −2 mA, I = 0 −35 V CEO C B Collector-base cutoff current (Emitter open) I V = −20 V, I = 0 − 0.1 µA CBO CB E Collector-emitter cutoff current (Base open) I V = −20 V, I = 0 −100 µA CEO CE B Emitter-base cutoff current (Collector open) I V = −5 V, I = 0 −10 µA EBO EB C * Forward current transfer ratio h V = −10 V, I = −500 mA 85 340  FE1 CE C h V = −5 V, I = −1 A 50  FE2 CE C Collector-emitter saturation voltage V I = −500 mA, I = −50 mA − 0.5 V CE(sat) C B Transition frequency f V = −10 V, I = 50 mA, f = 200 MHz 200 MHz T CE E Collector output capacitance C V = −10 V, I = 0, f = 1 MHz 20 30 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R S h 85 to 170 120 to 240 170 to 340 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: February 2003 SJD00002BED 1 1.9±0.1 3.8±0.3 16.0±1.0 11.0±0.5 3.05±0.1 2SA0885 P  T I  V I  I C a C CE C B 6 −1.50 –1.2 (1)With a 100 × 100 × 2 mm T =25˚C C VCE=–10V Al heat sink TC=25˚C (2)Without heat sink 5 −1.25 –1.0 I =–10mA B –9mA –8mA –7mA 4 −1.00 –0.8 (1) –6mA 3 −0.75 –0.6 –5mA –4mA 2 −0.50 –0.4 –3mA (2) –2mA 1 −0.25 –0.2 –1mA 0 0 0 0 40 80 120 160 200 0 −2 −4 −6 −8 −100– –2 –4 –6 –8 –1012 Ambient temperature T (°C) Collector-emitter voltage V (V) Base current I (mA) a CE B V  I V  I h  I CE(sat) C BE(sat) C FE C –10 –10 1 000 IC/IB=10 V =–10V CE IC/IB=10 T =100˚C C 25˚C TC=–25˚C –25˚C –1 –1 100 100˚C 25˚C TC=100˚C 25˚C –25˚C –0.1 –0.1 10 –0.01 –0.01 1 –0.01 –0.1 –1 –0.01 –0.1 –1 –0.01 –0.1 –1 Collector current I (A) Collector current I (A) Collector current I (A) C C C f  I C  V V  R T E ob CB CER BE 200 50 –100 IC=–10mA VCB=–10V I =0 E TC=25˚C f=200MHz f=1MHz TC=25˚C TC=25˚C 160 –80 40 120 –60 30 –40 80 20 –20 40 10 0 0 0 0.1 1 10 100 1 10 100 –1 –10 –100 Base-emitter resistance R (kΩ) Emitter current I (mA) Collector-base voltage V (V) BE E CB 2 SJD00002BED Transition frequency f (MHz) Collector-emitter saturation voltage V (V) Collector power dissipation P (W) T CE(sat) C Collector output capacitance C (pF) Collector current I (A) ob Base-emitter saturation voltage V (V) C (Common base, input open circuited) BE(sat) Collector-emitter voltage V (V) Forward current transfer ratio h Collector current I (A) CER FE C (Resistor between B and E) 2SA0885 I  T Safe operation area CEO a 4 10 –10 Single pulse VCE=–10V TC=25˚C ICP 3 –1 10 I C t=10ms t=1s 2 10 –0.1 –0.01 10 –0.001 1 –0.1 –1 –10 –100 0 40 80 120 160 Collector-emitter voltage V (V) Ambient temperature T (°C) CE a SJD00002BED 3 ( ) I T CEO a I (T = 25°C) CEO a Collector current I (A) C Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL