Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Unit: mm 5.9±0.2 4.9±0.2 Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) V CEO 0.7±0.1 ■ Absolute Maximum Ratings T = 25°C a Parameter Symbol Rating Unit Collector-base voltage (Emitter open) V −250 V CBO +0.2 Collector-emitter voltage (Base open) V −200 V +0.2 0.45 –0.1 CEO 0.45 –0.1 Emitter-base voltage (Collector open) V −5V (1.27) (1.27) EBO 1 : Emitter Collector current I −70 mA C 2 : Collector 13 2 3 : Base Peak collector current I −100 mA CP EIAJ : SC-51 2.54±0.15 Collector power dissipation P 1W TO-92L-A1 Package C Junction temperature T 150 °C j Storage temperature T −55 to +150 °C stg ■ Electrical Characteristics T = 25°C ± 3°C a Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) V I = −100 µA, I = 0 −200 V CEO C B Emitter-base voltage (Collector open) V I = −1 µA, I = 0 −5V EBO E C * Forward current transfer ratio h V = −10 V, I = −5 mA 60 220  FE CE C Collector-emitter saturation voltage V I = −50 mA, I = −5 mA −1.5 V CE(sat) C B Transition frequency f V = −10 V, I = 10 mA, f = 200 MHz 50 80 MHz T CB E Collector output capacitance C V = −10 V, I = 0, f = 1 MHz 5 10 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank Q R h 60 to 150 100 to 220 FE Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00006BED 1 +0.3 0.7 –0.2 (3.2) 13.5±0.5 8.6±0.2 2SA0879 P  T I  V I  I C a C CE C B 1.2 −120 −120 T = 25°C a V = −10 V CE T = 25°C a I = −2 mA B 1.0 −100 −100 −1.8 mA −1.6 mA −1.4 mA 0.8 −80 −80 −1.2 mA −1.0 mA − 0.8 mA 0.6 −60 −60 − 0.6 mA − 0.4 mA 0.4 −40 −40 − 0.2 mA 0.2 −20 −20 0 0 0 0 20 40 60 80 100 120 140 160 0 −2 −4 −6 −8 −10 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 −2.4 Ambient temperature T (°C) Base current I (mA) Collector-emitter voltage V (V) a B CE I  V I  V V  I B BE C BE CE(sat) C −2.4 −120 −100 I / I = 10 V = −10 V C B CE V = −10 V CE T = 25°C a 25°C −2.0 −100 T = 75°C a −25°C −10 −1.6 −80 −1.2 −60 −1 25°C T = 75°C a − 0.8 −40 − 0.1 −25°C − 0.4 −20 0 0 − 0.01 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 − 0.1 −1 −10 −100 Base-emitter voltage V (V) Base-emitter voltage V (V) ( ) Collector current I mA BE BE C h  I f  I C  V FE C T E ob CB 16 300 160 V = −10 V CE f = 1 MHz V = −10 V CB 14 I = 0 140 f = 100 MHz E 250 T = 25°C T = 25°C a a 120 12 200 10 100 T = 75°C a 8 150 80 25°C 6 60 100 −25°C 40 4 50 2 20 0 0 0 − 0.1 −1 −10 −100 0.1 1 10 100 −1 −10 −100 ( ) Collector-base voltage V (V) Collector current I (mA) Emitter current I mA CB C E 2 SJC00006BED Forward current transfer ratio h Base current I (mA) Collector power dissipation P (W) FE B C ( ) Collector current I (mA) Transition frequency f (MHz) Collector current I mA C T C Collector output capacitance C (pF) Collector to emitter saturation voltage V (V) Collector current I (mA) ob CE(sat) C (Common base, input open circuited) 2SA0879 I  T I  T Safe operation area EBO a CBO a 10000 10000 −1 000 V = −5 V V = −250 V Single pulse EB CB T = 25°C a I CP 1000 1000 −100 t = 10 ms I C t = 1 s 100 100 −10 10 10 −1 1 1 − 0.1 0 40 80 120 160 200 02 40 80 120 16000 −1 −10 −100 −1 000 ( ) Ambient temperature T (°C) Ambient temperature T °C Collector-emitter voltage V (V) a a CE SJC00006BED 3 I (T ) EBO a ( ) I T = 25°C EBO a I (T ) CBO a ( ) I T = 25°C CBO a Collector current I (mA) C Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other- wise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL