Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Unit: mm 5.9±0.2 4.9±0.2 Complementary to 2SC1509 ■ Features • High collector-emitter voltage (Base open) V CEO 0.7±0.1 • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier. ■ Absolute Maximum Ratings T = 25°C a Parameter Symbol Rating Unit +0.2 Collector-base voltage (Emitter open) V −80 V CBO +0.2 0.45 –0.1 0.45 –0.1 Collector-emitter voltage (Base open) V −80 V CEO (1.27) (1.27) 1 : Emitter Emitter-base voltage (Collector open) V −5V EBO 2 : Collector 13 2 3 : Base Collector current I − 0.5 A C EIAJ : SC-51 2.54±0.15 Peak collector current I −1A CP TO-92L-A1 Package Collector power dissipation P 1W C Junction temperature T 150 °C j Storage temperature T −55 to +150 °C stg ■ Electrical Characteristics T = 25°C ± 3°C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = −10 µA, I = 0 −80 V CBO C E Collector-emitter voltage (Base open) V I = −100 µA, I = 0 −80 V CEO C B Emitter-base voltage (Collector open) V I = −1 µA, I = 0 −5V EBO E C Collector-base cutoff current (Emitter open) I V = −20 V, I = 0 − 0.1 µA CBO CB E 1 2 * * Forward current transfer ratio h V = −10 V, I = −150 mA 90 220  FE1 CE C h V = −5 V, I = −500 mA 50 100 FE2 CE C Collector-emitter saturation voltage V I = −500 mA, I = −50 mA − 0.2 − 0.4 V CE(sat) C B Base-emitter saturation voltage V I = −500 mA, I = −50 mA − 0.85 −1.2 V BE(sat) C B Transition frequency f V = −10 V, I = 50 mA, f = 200 MHz 120 MHz T CB E Collector output capacitance C V = −10 V, I = 0, f = 1 MHz 11 20 pF ob CB E (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. 1: Palse measurement * 2: Rank classification * Rank Q R h 90 to 155 130 to 220 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00004BED 1 +0.3 0.7 –0.2 (3.2) 13.5±0.5 8.6±0.2 2SA0777 P  T I  V I  I C a C CE C B −1.2 −1.2 1.2 T = 25°C a V = −10 V CE T = 25°C a I = −10 mA −1.0 B −1.0 1.0 −9 mA −8 mA −7 mA − 0.8 − 0.8 0.8 −6 mA −5 mA − 0.6 − 0.6 0.6 −4 mA −3 mA − 0.4 − 0.4 0.4 −2 mA − 0.2 − 0.2 0.2 −1 mA 0 0 0 0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10 0 20 40 60 80 100 120 140 160 ( ) Collector-emitter voltage V V Base current I (mA) Ambient temperature T (°C) CE B a V  I V  I h  I CE(sat) C BE(sat) C FE C −10 −100 300 I / I = 10 I / I = 10 C B C B V = −10 V CE 250 −1 −10 200 T = 75°C a T = 75°C a 25°C 25°C 25°C T = −25°C a − 0.1 −1 150 −25°C 75°C −25°C 100 − 0.01 − 0.1 50 − 0.001 − 0.01 0 −1 −10 −100 −1 000 −1 −10 −100 −1 000 −1 −10 −100 −1 000 Collector current I (mA) Collector current I (mA) Collector current I (mA) C C C f  I C  V I  T T E ob CB CBO a 4 200 50 10 V = −10 V CB V = −20 V CB I = 0 E T = 25°C a f = 1 MHz 180 T = 25°C a 160 40 3 10 140 120 30 2 100 10 80 20 60 10 40 10 20 0 0 1 1 10 100 −1 −10 −100 0 20 40 60 80 100 120 140 160 180 Emitter current I (mA) Collector-base voltage V (V) ( ) Ambient temperature T °C E CB a 2 SJC00004BED Transition frequency f (MHz) Collector-emitter saturation voltage V (V) Collector power dissipation P (W) T CE(sat) C Collector output capacitance ( ) C (pF) Base-emitter saturation voltage V V Collector current I (A) ob BE(sat) C (Common base, input open circuited) I (T ) CBO a ( ) Forward current transfer ratio h Collector current I A ( ) I T = 25°C FE C CBO a 2SA0777 I  T Safe operation area CEO a 5 10 −10 Single pulse V = −10 V CE T = 25°C a 4 10 I t = 10 ms CP −1 I C 3 10 t = 1 s − 0.1 2 10 − 0.01 10 1 − 0.001 0 20 40 60 80 100 120 140 − 0.1 −1 −10 −100 Ambient temperature T (°C) Collector-emitter voltage V (V) a CE SJC00004BED 3 ( ) I T CEO a I (T = 25°C) CEO a ( ) Collector current I A C Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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