Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (E9087) BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich  Especially suitable for applications from von 400 nm bis 1100 nm 400 nm to 1100 nm  Kurze Schaltzeit (typ. 20 ns)  Short switching time (typ. 20 ns)  DIL-Plastikbauform mit hoher Packungsdichte  DIL plastic package with high packing density  BPW 34 S/(E9087): geeignet für Vapor-Phase  BPW 34 S/(E9087): suitable for vapor-phase Löten und IR-Reflow Löten (JEDEC level 4) and IR-reflow soldering (JEDEC level 4) Anwendungen Applications  Lichtschranken für Gleich- und  Photointerrupters Wechsellichtbetrieb  IR remote controls  IR-Fernsteuerungen  Industrial electronics  Industrieelektronik  For control and drive circuits  „Messen/Steuern/Regeln“ Typ Bestellnummer Type Ordering Code BPW 34 Q62702-P73 BPW 34 S Q62702-P1602 BPW 34 S (E9087) Q62702-P1790 2003-02-04 1 BPW 34, BPW 34 S, BPW 34 S (E9087) Grenzwerte Maximum Ratings Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit BPW 34 S BPW 34 BPW 34 S (E9087) Betriebs- und Lagertemperatur T ; T – 40 … + 100 – 40 … + 85 °C op stg Operating and storage temperature range Sperrspannung V 32 V R Reverse voltage Verlustleistung, T = 25 °C P 150 mW A tot Total power dissipation Kennwerte (T = 25 °C, Normlicht A, T = 2856 K) A Characteristics (T = 25 °C, standard light A, T = 2856 K) A Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Fotoempfindlichkeit, V = 5 V S 80 (≥ 50) nA/Ix R Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit λ 850 nm S max2003-02-04 Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit λ 400 … 1100 nm S = 10% von S max Spectral range of sensitivity S = 10% of S max 2 Bestrahlungsempfindliche Fläche A 7.00 mm Radiant sensitive area Abmessung der bestrahlungsempfindlichen L × B 2.65 × 2.65 mm × mm Fläche Dimensions of radiant sensitive area L × W Halbwinkel ϕ± 60 Grad Half angle deg. Dunkelstrom, V = 10 V I 2 (≤ 30) nA R R Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm S 0.62 A/W λ Spectral sensitivity Quantenausbeute, λ = 850 nm η 0.90 Electrons Quantum yield Photon 2003-02-04 2 BPW 34, BPW 34 S, BPW 34 S (E9087) Kennwerte (T = 25 °C, Normlicht A, T = 2856 K) A Characteristics (T = 25 °C, standard light A, T = 2856 K) (cont’d) A Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Leerlaufspannung, E = 1000 Ix V 365 (≥ 300) mV v O Open-circuit voltage Kurzschlußstrom, E = 1000 Ix I 80 µA v SC Short-circuit current Anstiegs- und Abfallzeit des Fotostromes t , t 20 ns r f Rise and fall time of the photocurrent R = 50 Ω; V = 5 V; λ = 850 nm; I = 800 µA L R p Durchlaßspannung, I = 100 mA, E = 0 V 1.3 V F F Forward voltage Kapazität, V = 0 V, f = 1 MHz, E = 0 C 72 pF R 0 Capacitance Temperaturkoeffizient von V TC – 2.6 mV/K O V Temperature coefficient of V O Temperaturkoeffizient von I TC 0.18 %/K SC I Temperature coefficient of I SC – 14 Rauschäquivalente Strahlungsleistung 4.1 × 10 NEP W -- -- --- -- -- - Noise equivalent power Hz V = 10 V, λ = 850 nm R 12 Nachweisgrenze, V = 10 V, λ = 850 nm D* 6.6 × 10 R cm × Hz -- -- --- -- -- -- -- -- -- --- - - - - Detection limit W 2003-02-04 3 BPW 34, BPW 34 S, BPW 34 S (E9087) Relative Spectral Sensitivity Photocurrent I = f (E ), V = 5 V Total Power Dissipation P v R S = f (λ) Open-Circuit Voltage V = f (E ) P = f (T ) rel O v tot A OHF00078 OHF01066 OHF00958 34 100 10 10 160 µAmV mW Ι V P S P O tot rel % 140 80 2 3 120 10 10 V O 100 60 1 2 10 10 80 Ι P 40 60 0 1 40 10 10 20 20 -1 0 10 10 0 0 0 1 2 3 4 0 20 40 60 80 ˚C 100 10 10 10 10 lx 10 400 500 600 700 800 900 nm 1100 E T A λ V Dark Current Capacitance Dark Current I = f (V ), E = 0 C = f (V ), f = 1 MHz, E = 0 I = f (T ), V = 10 V, E = 0 R R R R A R OHF00080 OHF00081 3 OHF00082 4000 100 10 nA Ι Ι C pF R R pA 80 2 3000 10 70 60 1 2000 50 10 40 30 0 1000 10 20 10 -1 0 0 10 -2 -1 0 1 2 0 5 10 15 V 20 0 20 40 60 80 ˚C 100 10 10 10 10 V 10 V R V T R A Directional Characteristics S = f (ϕ) rel 40 30 20 10 0 OHF01402 ϕ 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2003-02-04 4 0.35 (0.014) 0.2 (0.008) BPW 34, BPW 34 S, BPW 34 S (E9087) Maßzeichnung Package Outlines BPW 34 5.4 (0.213) Cathode marking 4.9 (0.193) 4.0 (0.157) 4.5 (0.177) Chip position 3.7 (0.146) 4.3 (0.169) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.5 (0.020) 0.3 (0.012) 0.8 (0.031) 0 ... 5˚ 0.6 (0.024) 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW 34 S Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2003-02-04 5 0...5˚ 0.6 (0.024) 1.8 (0.071) 1.2 (0.047) 0.4 (0.016) 1.4 (0.055) 1.1 (0.043) 0...0.1 0.9 (0.035) (0...0.004) 1.2 (0.047) 0.7 (0.028) 0.7 (0.028) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024) 1.7 (0.067) 1.5 (0.059) 0.2 (0.008) 4.0 (0.157) 0.1 (0.004) 0.6 (0.024) 3.7 (0.146) 0.4 (0.016) 3.5 (0.138) 2.2 (0.087) 3.0 (0.118) 1.9 (0.075) BPW 34, BPW 34 S, BPW 34 S (E9087) BPW 34 S (E9087) Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.8 (0.071) ±0.2 (0.008) Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical 1 2 components , may only be used in life-support devices or systems with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2003-02-04 6 0...5˚ 1.2 (0.047) 1.1 (0.043) 0...0.1 0.9 (0.035) (0...0.004) 0.7 (0.028) 0.3 (0.012) 1.7 (0.067) 1.5 (0.059) 0.2 (0.008) 4.0 (0.157) 0.1 (0.004) 3.7 (0.146)