MBT3946DW1T1 Dual General Purpose Transistor The MBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 http://onsemi.com six–leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low–power surface mount 6 applications where board space is at a premium. 5 4 • h , 100–300 1 FE 2 3 • Low V , ≤ 0.4 V CE(sat) SOT–363/SC–88 • Simplifies Circuit Design CASE 419B STYLE 1 • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7–inch/3,000 Unit Tape and Reel (3) (2) (1) • Device Marking: MBT3946DW1T1 = 46 Q Q 1 2 MAXIMUM RATINGS Rating Symbol Value Unit (4) (5) (6) Collector–Emitter Voltage V Vdc CEO MBT3946DW1T1* (NPN) 40 (PNP) –40 *Q1 NPN Q2 PNP Collector–Base Voltage V Vdc CBO (NPN) 60 (PNP) –40 Emitter–Base Voltage V Vdc ORDERING INFORMATION EBO (NPN) 6.0 Device Package Shipping (PNP) –5.0 Collector Current – Continuous I mAdc C MBT3946DW1T1 SOT–363 3000 Units/Reel (NPN) 200 (PNP) –200 Electrostatic Discharge ESD HBM>16000, V MM>2000 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit (1) Total Package Dissipation P 150 mW D T = 25°C A Thermal Resistance Junction to R 833 °C/W �JA Ambient Junction and Storage T , T –55 to +150 °C J stg Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint.  Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2001 – Rev. 0 MBT3946DW1T1/D MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (2) Collector–Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) (NPN) 40 – C B (I = –1.0 mAdc, I = 0) (PNP) –40 – C B Collector–Base Breakdown Voltage V Vdc (BR)CBO (I = 10 �Adc, I = 0) (NPN) 60 – C E (I = –10 �Adc, I = 0) (PNP) –40 – C E Emitter–Base Breakdown Voltage V Vdc (BR)EBO (I = 10 �Adc, I = 0) (NPN) 6.0 – E C (I = –10 �Adc, I = 0) (PNP) –5.0 – E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) (NPN) – 50 CE EB (V = –30 Vdc, V = –3.0 Vdc) (PNP) – –50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) (NPN) – 50 CE EB (V = –30 Vdc, V = –3.0 Vdc) (PNP) – –50 CE EB ON CHARACTERISTICS (2) DC Current Gain h – FE (I = 0.1 mAdc, V = 1.0 Vdc) (NPN) 40 – C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 – C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 – C CE (I = 100 mAdc, V = 1.0 Vdc) 30 – C CE (I = –0.1 mAdc, V = –1.0 Vdc) (PNP) 60 – C CE (I = –1.0 mAdc, V = –1.0 Vdc) 80 – C CE (I = –10 mAdc, V = –1.0 Vdc) 100 300 C CE (I = –50 mAdc, V = –1.0 Vdc) 60 – C CE (I = –100 mAdc, V = –1.0 Vdc) 30 – C CE Collector–Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) – 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) – 0.3 C B (I = –10 mAdc, I = –1.0 mAdc) (PNP) – –0.25 C B (I = –50 mAdc, I = –5.0 mAdc) – –0.4 C B Base–Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) – 0.95 C B (I = –10 mAdc, I = –1.0 mAdc) (PNP) –0.65 –0.85 C B (I = –50 mAdc, I = –5.0 mAdc) – –0.95 C B SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) (NPN) 300 – C CE (I = –10 mAdc, V = –20 Vdc, f = 100 MHz) (PNP) 250 – C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) (NPN) – 4.0 CB E (V = –5.0 Vdc, I = 0, f = 1.0 MHz) (PNP) – 4.5 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) (NPN) – 8.0 EB C (V = –0.5 Vdc, I = 0, f = 1.0 MHz) (PNP) – 10.0 EB C 2. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤2.0%. http://onsemi.com 2 MBT3946DW1T1 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued) A Characteristic Symbol Min Max Unit Input Impedance h k Ω ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 10 CE C (V = –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz) (PNP) 2.0 12 CE C –4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (NPN) 0.5 8.0 CE C (V = –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz) (PNP) 0.1 10 CE C Small–Signal Current Gain h – fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (NPN) 100 400 CE C (V = –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz) (PNP) 100 400 CE C Output Admittance h �mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) (NPN) 1.0 40 CE C (V = –10 Vdc, I = –1.0 mAdc, f = 1.0 kHz) (PNP) 3.0 60 CE C Noise Figure NF dB (V = 5.0 Vdc, I = 100 �Adc, R = 1.0 k Ω, f = 1.0 kHz) (NPN) – 5.0 CE C S (V = –5.0 Vdc, I = –100 �Adc, R = 1.0 k Ω, f = 1.0 kHz) (PNP) – 4.0 CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = –0.5 Vdc) (NPN) t – 35 CC BE d (V = –3.0 Vdc, V = 0.5 Vdc) (PNP) – 35 CC BE ns ns Rise Time (I = 10 mAdc, I = 1.0 mAdc) (NPN) t – 35 C B1 r (I = –10 mAdc, I = –1.0 mAdc) (PNP) – 35 C B1 Storage Time (V = 3.0 Vdc, I = 10 mAdc) (NPN) t – 200 CC C s (V = –3.0 Vdc, I = –10 mAdc) (PNP) – 225 CC C ns ns Fall Time (I = I = 1.0 mAdc) (NPN) t – 50 B1 B2 f (I = I = –1.0 mAdc) (PNP) – 75 B1 B2 http://onsemi.com 3 MBT3946DW1T1 (NPN) +3 V +3 V DUTY CYCLE = 2% t 10 < t < 500 �s 1 1 +10.9 V 300 ns DUTY CYCLE = 2% +10.9 V 275 275 10 k 10 k 0 -�0.5 V C < 4 pF* C < 4 pF* < 1 ns s s 1N916 -�9.1 V ′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T = 25 °C J T = 125 °C J 10 5000 (NPN) V = 40 V CC (NPN) 3000 7.0 I /I = 10 C B 2000 5.0 1000 700 C ibo 500 3.0 Q 300 T C 200 obo 2.0 Q A 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) C Figure 3. Capacitance Figure 4. Charge Data http://onsemi.com 4 CAPACITANCE (pF) Q, CHARGE (pC) MBT3946DW1T1 (NPN) 500 500 I /I = 10 V = 40 V C B CC 300 300 I /I = 10 C B 200 200 100 100 70 t @ V = 3.0 V 70 r CC 50 50 30 30 40 V 20 20 15 V 10 10 (NPN) (NPN) 2.0 V 7 t @ V = 0 V 7 d OB 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 5. Turn–On Time Figure 6. Rise Time 500 500 1 t′ = t - / t s s 8 f V = 40 V CC 300 300 I = I B1 B2 I = I I /I = 20 I /I = 10 B1 B2 C B C B 200 200 I /I = 20 C B 100 100 70 70 I /I = 20 C B 50 50 I /I = 10 I /I = 10 C B C B 30 30 20 20 10 10 (NPN) (NPN) 7 7 5 5 70 100 200 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 7. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = 5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) CE A 12 14 SOURCE RESISTANCE = 200 � f = 1.0 kHz I = 1.0 mA C I = 1.0 mA 12 C 10 I = 0.5 mA C 10 SOURCE RESISTANCE = 200 � 8 I = 50 �A C I = 0.5 mA C 8 6 SOURCE RESISTANCE = 1.0 k I = 100 �A C 6 I = 50 �A C 4 4 2 SOURCE RESISTANCE = 500 � 2 (NPN (NPN) I = 100 �A C ) 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) R , SOURCE RESISTANCE (k OHMS) S Figure 9. Noise Figure Figure 10. Noise Figure http://onsemi.com 5 NF, NOISE FIGURE (dB) t , STORAGE TIME (ns) TIME (ns) ′ s t , FALLTIME (ns) t , RISE TIME (ns) NF, NOISE FIGURE (dB) f r MBT3946DW1T1 (NPN) h PARAMETERS (V = 10 Vdc, f = 1.0 kHz, T = 25°C) CE A 300 100 (NPN) (NPN) 50 200 20 10 100 70 5 50 2 30 1 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 11. Current Gain Figure 12. Output Admittance 20 10 7.0 (NPN) (NPN) 10 5.0 5.0 3.0 2.0 2.0 1.0 1.0 0.5 0.7 0.2 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio http://onsemi.com 6 h , INPUT IMPEDANCE (k OHMS) h , CURRENT GAIN ie fe h , VOLTAGE FEEDBACK RATIO (x 10 ) -4 h , OUTPUTADMITTANCE ( mhos) � re oe MBT3946DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS 2.0 T = +125 °C J V = 1.0 V (NPN) CE +25°C 1.0 0.7 -�55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) C Figure 15. DC Current Gain 1.0 T = 25 °C J (NPN) 0.8 I = 1.0 mA 10 mA 30 mA 100 mA C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , BASE CURRENT (mA) B Figure 16. Collector Saturation Region 1.2 1.0 (NPN) T = 25 °C (NPN) J V @ I /I =10 BE(sat) C B +25°C TO +125 °C 1.0 0.5 � FOR V VC CE(sat) 0.8 0 -�55°C TO +25 °C V @ V =1.0 V BE CE 0.6 -�0.5 -�55°C TO +25 °C 0.4 -�1.0 V @ I /I =10 CE(sat) C B +25°C TO +125 °C � FOR V -�1.5 VB BE(sat) 0.2 0 -�2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 17. “ON” Voltages Figure 18. Temperature Coefficients http://onsemi.com 7 V, VOLTAGE (VOLTS) V , COLLECTOR EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED) CE FE COEFFICIENT (mV/ C) ° MBT3946DW1T1 (PNP) 3 V 3 V < 1 ns +9.1 V 275 275 < 1 ns +0.5 V 10 k 10 k 0 C < 4 pF* C < 4 pF* s s 1N916 10.6 V 300 ns 10 < t < 500 �s 1 t 10.9 V 1 DUTY CYCLE = 2% DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Figure 20. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T = 25 °C J T = 125 °C J 10 5000 V = 40 V CC (PNP) 3000 (PNP) 7.0 I /I = 10 C B 2000 C 5.0 obo 1000 700 C ibo 500 3.0 300 200 2.0 Q T Q A 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) I , COLLECTOR CURRENT (mA) C Figure 21. Capacitance Figure 22. Charge Data 500 500 (PNP) I /I = 10 (PNP) V = 40 V C B CC 300 300 I = I B1 B2 200 200 I /I = 20 C B 100 100 70 70 t @ V = 3.0 V r CC 50 50 15 V 30 30 I /I = 10 20 20 C B 40 V 10 2.0 V 10 7 t @ V = 0 V 7 d OB 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 23. Turn–On Time Figure 24. Fall Time http://onsemi.com 8 TIME (ns) CAPACITANCE (pF) t , FALLTIME (ns) f Q, CHARGE (pC) MBT3946DW1T1 (PNP) TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V = –5.0 Vdc, T = 25°C, Bandwidth = 1.0 Hz) CE A 5.0 12 SOURCE RESISTANCE = 200 � f = 1.0 kHz I = 1.0 mA C I = 1.0 mA C 10 4.0 I = 0.5 mA C SOURCE RESISTANCE = 200 � I = 0.5 mA C 8 3.0 SOURCE RESISTANCE = 2.0 k 6 I = 50 �A C 2.0 4 I = 50 �A C SOURCE RESISTANCE = 2.0 k 1.0 I = 100 �A C 2 I = 100 �A C (PNP) (PNP) 0 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 f, FREQUENCY (kHz) R , SOURCE RESISTANCE (k OHMS) g Figure 25. Figure 26. h PARAMETERS (V = –10 Vdc, f = 1.0 kHz, T = 25°C) CE A 300 100 (PNP) (PNP) 70 50 200 30 20 100 70 10 50 7 30 5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 27. Current Gain Figure 28. Output Admittance 20 10 7.0 (PNP) (PNP) 10 7.0 5.0 5.0 3.0 3.0 2.0 2.0 1.0 0.7 1.0 0.5 0.7 0.3 0.2 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio http://onsemi.com 9 h , INPUT IMPEDANCE (k OHMS) h , DC CURRENT GAIN NF, NOISE FIGURE (dB) ie fe h , OUTPUTADMITTANCE ( mhos) � NF, NOISE FIGURE (dB) -4 oe h , VOLTAGE FEEDBACK RATIO (x 10 ) re MBT3946DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS 2.0 T = +125 °C J V = 1.0 V CE +25°C 1.0 0.7 -�55°C 0.5 0.3 (PNP) 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 I , COLLECTOR CURRENT (mA) C Figure 31. DC Current Gain 1.0 T = 25 °C (PNP) J 0.8 I = 1.0 mA 10 mA 30 mA 100 mA C 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I , BASE CURRENT (mA) B Figure 32. Collector Saturation Region 1.0 1.0 T = 25 °C V @ I /I = 10 J BE(sat) C B 0.5 +25°C TO +125 °C 0.8 � FOR V VC CE(sat) V @ V = 1.0 V BE CE 0 -�55°C TO +25 °C 0.6 (PNP) -�0.5 (PNP) +25°C TO +125 °C 0.4 -�1.0 -�55°C TO +25 °C V @ I /I = 10 CE(sat) C B 0.2 � FOR V -�1.5 VB BE(sat) 0 -�2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 33. “ON” Voltages Figure 34. Temperature Coefficients http://onsemi.com 10 V, VOLTAGE (VOLTS) V , COLLECTOR EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED) CE FE � , TEMPERATURE COEFFICIENTS (mV/ C)° V MBT3946DW1T1 INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the interface between the board and the package. With the total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when must be the correct size to insure proper solder connection subjected to a solder reflow process. 0.5 mm (min) ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ ÉÉÉÉÉÉ 1.9 mm SOT–363 SOT–363 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–363 is a function of the pad size. This can vary from the minimum pad size for The melting temperature of solder is higher than the soldering to a pad size given for maximum power dissipa- rated temperature of the device. When the entire device is tion. Power dissipation for a surface mount device is deter- heated to a high temperature, failure to complete soldering mined by T , the maximum rated junction temperature within a short time could result in device failure. There- J(max) of the die, R , the thermal resistance from the device fore, the following items should always be observed in θJA junction to ambient, and the operating temperature, T . order to minimize the thermal stress to which the devices A Using the values provided on the data sheet for the are subjected. SOT–363 package, P can be calculated as follows: • Always preheat the device. D • The delta temperature between the preheat and T – T J(max) A P = D soldering should be 100°C or less.* R θJA • When preheating and soldering, the temperature of the The values for the equation are found in the maximum leads and the case must not exceed the maximum ratings table on the data sheet. Substituting these values temperature ratings as shown on the data sheet. When into the equation for an ambient temperature T of 25°C, A using infrared heating with the reflow soldering one can calculate the power dissipation of the device which method, the difference shall be a maximum of 10°C. in this case is 150 milliwatts. • The soldering temperature and time shall not exceed 150°C – 25°C 260°C for more than 10 seconds. P = = 150 milliwatts D 833°C/W • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. The 833°C/W for the SOT–363 package assumes the use • After soldering has been completed, the device should of the recommended footprint on a glass epoxy printed be allowed to cool naturally for at least three minutes. circuit board to achieve a power dissipation of 150 milli- Gradual cooling should be used as the use of forced watts. There are other alternatives to achieving higher cooling will increase the temperature gradient and power dissipation from the SOT–363 package. Another result in latent failure due to mechanical stress. alternative would be to use a ceramic substrate or an • Mechanical stress or shock should not be applied aluminum core board such as Thermal Clad. Using a during cooling. board material such as Thermal Clad, an aluminum core * Soldering a device without preheating can cause exces- board, the power dissipation can be doubled using the same sive thermal shock and stress which can result in damage footprint. to the device. http://onsemi.com 11 0.4 mm (min) 0.65 mm 0.65 mm MBT3946DW1T1 PACKAGE DIMENSIONS SOT–363/SC–88 CASE 419B–01 ISSUE G A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 65 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX S –B– A 0.071 0.087 1.80 2.20 12 3 B 0.045 0.053 1.15 1.35 C 0.031 0.043 0.80 1.10 D 0.004 0.012 0.10 0.30 G 0.026 BSC 0.65 BSC H --- 0.004 --- 0.10 MM 0.2 (0.008) B J 0.004 0.010 0.10 0.25 D 6 PL K 0.004 0.012 0.10 0.30 N 0.008 REF 0.20 REF S 0.079 0.087 2.00 2.20 N V 0.012 0.016 0.30 0.40 STYLE 1: J PIN 1. EMITTER 2 2. BASE 2 C 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 K H Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. MBT3946DW1T1/D http://onsemi.com 12