BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com ...for use as output devices in complementary general–purpose amplifier applications. 4.0 AMPERE • High DC Current Gain – DARLINGTON h = 750 (Min) @ I = 1.5 and 2.0 Adc FE C POWER TRANSISTORS • Monolithic Construction PNP SILICON • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 45, 60, 80, 100 VOLTS • BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 40 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V Vdc CEO BD676, BD676A 45 BD678, BD678A 60 BD680, BD680A 80 STYLE 1: BD682 100 PIN 1. EMITTER 3 2. COLLECTOR 2 Collector-Base Voltage V Vdc 1 3. BASE CB BD676, BD676A 45 TO–225AA BD678, BD678A 60 CASE 77 BD680, BD680A 80 STYLE 1 BD682 100 Emitter-Base Voltage V 5.0 Vdc EB MARKING DIAGRAM Collector Current I 4.0 Adc C YWW Base Current I 0.1 Adc B BD6xxx Total Device Dissipation P D @ T = 25°C 40 W C Y = Year Derate above 25°C 0.32 W/°C WW = Work Week Operating and Storage Junction T , T –55 to +150 °C J stg BD6xxx = Specific Device Code Temperature Range xxx = 76, 76A, 78, 78A, 80, 80A or 82 THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit Device Package Shipping Thermal Resistance – R 3.13 °C/W θJC Junction to Case BD676 TO–225AA 500 Units/Box BD676A TO–225AA 500 Units/Box BD678 TO–225AA 500 Units/Box BD678A TO–225AA 500 Units/Box BD680 TO–225AA 500 Units/Box BD680A TO–225AA 500 Units/Box BD682 TO–225AA 500 Units/Box  Semiconductor Components Industries, LLC, 2002 Publication Order Number: April, 2002 – Rev. 10 BD676/D BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage (Note 1) BD676, 676A BV 45 – Vdc CEO (I = 50 mAdc, I = 0) BD678, 678A 60 – C B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BD680, 680A 80 – ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BD682 100 – ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (V = Half Rated V , I = 0) I – 500 μAdc CE CEO B CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) – 0.2 CB CEO E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ (V = Rated BV . I = 0, T = 100°C) – 2.0 CB CEO E C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I – 2.0 mAdc BE C EBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (Note 1) h FE (I = 1.5 Adc, V = 3.0 Vdc) BD676, 678, 680, 682 750 – ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C CE (I = 2.0 Adc, V = 3.0 Vdc) BD676A, 678A, 680A 750 – C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (Note 1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.5 Adc, I = 30 mAdc) BD678, 680, 682 V – 2.5 Vdc C B CE(sat) (I = 2.0 Adc, I = 40 mAdc) BD676A, 678A, 680A – 2.8 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C B Base–Emitter On Voltage (Note 1) V Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BE(on) (I = 1.5 Adc, V = 3.0 Vdc) BD678, 680, 682 – 2.5 C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 2.0 Adc, V = 3.0 Vdc) BD676A, 678A, 680A – 2.5 C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small–Signal Current Gain (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) h 1.0 – – C CE fe 1. Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 50 45 40 35 30 25 20 15 10 5.0 0 15 30 45 60 75 90 105 120 135 150 165 T , CASE TEMPERATURE ( °C) C Figure 1. Power Temperature Derating http://onsemi.com 2 P , POWER DISSIPATION (WATTS) D BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 5.0 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate I – V C CE 2.0 limits of the transistor that must be observed for reliable 1.0 operation; e.g., the transistor must not be subjected to greater BONDING WIRE LIMIT dissipation than the curves indicate. THERMAL LIMIT at T = 25 °C 0.5 C At high case temperatures, thermal limitations will reduce SECONDARY BREAKDOWN LIMIT the power that can be handled to values less than the limitations imposed by secondary breakdown. 0.2 BD676, 676A BD678, 678A T = 25 °C C 0.1 BD680, 680A BD682 0.05 1.0 2.0 5.0 10 20 50 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 2. DC Safe Operating Area COLLECTOR PNP BD676, 676A BD678, 678A BD680, 680A BD682 BASE � 8.0 k � 120 EMITTER Figure 3. Darlington Circuit Schematic http://onsemi.com 3 I , COLLECTOR CURRENT (AMP) C BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 PACKAGE DIMENSIONS TO–126 TO–225AA CASE 77–09 ISSUE W –B– NOTES: F C U 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q M –A– INCHES MILLIMETERS DIM MIN MAX MIN MAX 13 2 A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 H F 0.115 0.130 2.93 3.30 K G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP �� V J Q 0.148 0.158 3.76 4.01 G R R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 M M M S 0.25 (0.010) A B U 0.145 0.155 3.69 3.93 V 0.040 --- 1.02 --- D 2 PL STYLE 1: M M M 0.25 (0.010) A B PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. BD676/D http://onsemi.com 4