ON SEMICONDUCTOR BD681
Description
TRANS NPN DARL 4A 100V TO225AA
Part Number
BD681
Price
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Manufacturer
ON SEMICONDUCTOR
Lead Time
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Category
PRODUCTS - B
Datasheet
2279908_1.pdf
42 KiB
Extracted Text
� ON Semiconductor BD675 Plastic Medium-Power BD675A Silicon NPN Darlingtons BD677 . . . for use as output devices in complementary general–purpose BD677A amplifier applications. BD679 • High DC Current Gain — h = 750 (Min) @ I BD679A FE C = 1.5 and 2.0 Adc BD681* • Monolithic Construction *ON Semiconductor Preferred Device • BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682 4.0 AMPERE • BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803 DARLINGTON MAXIMUM RATINGS POWER TRANSISTORS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ NPN SILICON BD675 BD677 BD679 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 60, 80, 100 VOLTS Symbo BD675 BD677 BD679 BD68 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 40 WATTS Rating l A A A 1 Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage V 45 60 80 100 Vdc CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage V 45 60 80 100 Vdc CB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage V 5.0 Vdc EB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current I 4.0 Adc C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current I 0.1 Adc B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation P STYLE 1: D PIN 1. EMITTER @T = 25�C 40 Watts ÎÎÎÎÎÎÎÎ CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2. COLLECTOR 3 2 Derate above 25�C 0.32 W/�C 1 3. BASE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage T , T –55 to +150 �C J stg CASE 77–09 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction TO–225AA TYPE Temperating Range ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case θ 3.13 �C/W JC ÎÎÎÎÎÎÎÎÎÎÎÎÎ 50ÎÎÎÎÎÎÎÎÎÎÎÎÎ 45 40 35 30 25 20 15 10 5.0 0 15 30 45 60 75 90 105 120 135 150 165 T , CASE TEMPERATURE ( °C) C Figure 1. Power Temperature Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: April, 2002 – Rev.10 BD675/D P , POWER DISSIPATION (WATTS) D BD675 BD675A BD677 BD677A BD679 BD679A BD681 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Breakdown Voltage BD675, 675A BV 45 — Vdc CEO (I = 50 mAdc, I = 0) BD677, 677A 60 — C B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BD679, 679A 80 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BD681 100 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (V = Half Rated V , I = 0)ÎÎÎÎÎÎÎÎÎÎ IÎÎÎÎÎÎ —ÎÎÎÎÎÎÎÎ 500ÎÎÎÎÎÎ μAdc CE CEO B CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) — 0.2 CB CEO E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ (V = Rated BV , I = 0, T = 100’C) — 2.0 CB CEO E C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I — 2.0 mAdc BE C EBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) DC Currert Gain h — FE (I = 1.5 Adc,V = 3.0 Vdc) BD675, 677, 679, 681 750 — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C CEÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 2.0 Adc, V = 3.0 Vdc) BD675A, 677A, 679A 750 — C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Collector–Emitter Saturation Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.5 Adc, I = 30 mAdc) BD677, 679, 681 V — 2.5 Vdc C B CE(sat) (I = 2.0 Adc, I = 40 mAdc) BD675A, 677A, 679A — 2.8 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ C BÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Base–Emitter On Voltage V Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BE(on)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 1.5 Adc, V = 3.0 Vdc) BD677, 679, 681 — 2.5 C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 2.0 Adc, V = 3 0 Vdc) BD675A, 677A, 679A — 2.5 C CE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small Signal Current Gain (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) h 1.0 — — C CE fe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%.ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 5.0 There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate I – V 2.0 C CE limits of the transistor that must be observed for reliable 1.0 operation; e.g., the transistor must not be subjected to greater BONDING WIRE LIMIT dissipation than the curves indicate. THERMALLY LIMIT at T = 25 °C 0.5 C At high case temperatures, thermal limitations will reduce SECONDARY BREAKDOWN LIMIT the power that can be handled to values less than the limitations imposed by secondary breakdown. 0.2 BD675, 675A BD677, 677A T = 25 °C C 0.1 BD679, 679A BD681 0.05 1.0 2.0 5.0 10 20 50 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 2. DC Safe Operating Area http://onsemi.com 2 I , COLLECTOR CURRENT (AMP) C BD675 BD675A BD677 BD677A BD679 BD679A BD681 COLLECTOR NPN BD675, 675A BD677, 677A BD679, 679A BD681 BASE � 8.0 k � 120 EMITTER Figure 3. Darlington Circuit Schematic http://onsemi.com 3 BD675 BD675A BD677 BD677A BD679 BD679A BD681 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– NOTES: F U C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. Q 2. CONTROLLING DIMENSION: INCH. M INCHES MILLIMETERS –A– DIM MIN MAX MIN MAX 13 2 A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 H F 0.115 0.130 2.93 3.30 K G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP �� 5 TYP J V Q 0.148 0.158 3.76 4.01 G R R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 M M M 0.25 (0.010) A B S U 0.145 0.155 3.69 3.93 V 0.040 --- 1.02 --- D 2 PL M M M 0.25 (0.010) A B STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. BD675/D http://onsemi.com 4
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