BCX56-10R1 Preferred Device NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount http://onsemi.com applications. • High Current: 1.0 Amp MEDIUM POWER • Available in 7 inch/1000 unit Tape and Reel NPN SILICON • Device Marking: BK HIGH CURRENT MAXIMUM RATINGS (T = 25°C unless otherwise noted) C TRANSISTOR Rating Symbol Value Unit SURFACE MOUNT Collector-Emitter Voltage V 80 Vdc CEO Collector-Base Voltage V 100 Vdc CBO COLLECTOR 2 Emitter-Base Voltage V 5 Vdc EBO Collector Current I 1 Adc BASE C 1 Total Power Dissipation P D @ T = 25°C (Note 1.) 1.56 Watts A EMITTER Derate above 25°C 13 mW/°C 3 (Note 2.) 0.67 Watts 5.0 mW/°C Operating and Storage T , T –65 to 150 °C J stg MARKING DIAGRAM Temperature Range THERMAL CHARACTERISTICS YM 1 Characteristic Symbol Max Unit 2 3 BK Thermal Resistance R °C/W θJA SOT–89 Junction-to-Ambient (Note 1.) 80 CASE 1213 Y = Year Code (surface mounted) (Note 2.) 190 STYLE 2 M = Month Code Maximum Temperature for T L BK = Device Code Soldering Purposes 260 °C Time in Solder Bath 10 Sec 1. FR–4 @ 1.0 X 1.0 inch Pad ORDERING INFORMATION 2. FR–4 @ Minimum Pad Device Package Shipping BCX56–10R1 SOT–89 1000/Tape & Reel Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: June, 2001 – Rev. 0 BCX56–10R1/D BCX56–10R1 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage V 100 – – Vdc (BR)CBO (I = 100 μAdc, I = 0) C E Collector-Emitter Breakdown Voltage V 80 – – Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Emitter-Base Breakdown Voltage V 5.0 – – Vdc (BR)EBO (I = 10 μAdc, I = 0) E C Collector-Base Cutoff Current I – – 100 nAdc CBO (V = 30 Vdc, I = 0) CB E Emitter-Base Cutoff Current I – – 10 μAdc EBO (V = 5.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 3.) DC Current Gain h – FE (I = 5.0 mA, V = 2.0 V) 25 – – C CE (I = 150 mA, V = 2.0 V) 63 – 160 C CE (I = 500 mA, V = 2.0 V) 25 – – C CE Collector-Emitter Saturation Voltage V – – 0.5 Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) C B Base-Emitter On Voltage V – – 1.0 Vdc BE(on) (I = 500 mAdc, V = 2.0 Vdc) C CE DYNAMIC CHARACTERISTICS Current-Gain – Bandwidth Product f – 130 – MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 35 MHz) C CE 3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0% TYPICAL ELECTRICAL CHARACTERISTICS 1000 T = 125 °C J T = 25 °C J 100 T = -55 °C J 10 1 10 100 1000 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain http://onsemi.com 2 h , DC CURRENT GAIN FE BCX56–10R1 TYPICAL ELECTRICAL CHARACTERISTICS 1000 80 60 T = 25 °C J 40 C ibo 20 100 10 8.0 6.0 C obo 10 4.0 1.0 10 100 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I , COLLECTOR CURRENT (mA) V , REVERSE VOLTAGE (VOLTS) C R Figure 2. Current-Gain – Bandwidth Product Figure 3. Capacitance 1.0 1.0 T = 25 °C J T = 25 °C J 0.8 0.8 V @ I /I = 10 BE(sat) C B 50 I = 10�mA 100�mA C 250�mA 500�mA 0.6 0.6 mA V @ V = 1.0 V BE(on) CE 0.4 0.4 0.2 0.2 V @ I /I = 10 CE(sat) C B 0 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 4. “On” Voltages Figure 5. Collector Saturation Region STEP 5 STEP 6 STEP 7 STEP 1 STEP 2 STEP 4 STEP 3 HEATING VENT COOLING PREHEAT VENT HEATING HEATING ZONES 4 & 7 ZONE 1 �SOAK" ZONES 3 & 6 ZONES 2 & 5 205° TO �SPIKE" �RAMP" �SOAK" �RAMP" 219°C DESIRED CURVE FOR HIGH 170°C 200°C PEAK AT MASS ASSEMBLIES SOLDER 160°C JOINT 150°C 150°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS 100°C 140°C (DEPENDING ON MASS OF ASSEMBLY) 100°C DESIRED CURVE FOR LOW MASS ASSEMBLIES 50°C T TIME (3 TO 7 MINUTES TOTAL) MAX Figure 6. Typical Solder Heating Profile http://onsemi.com 3 V, VOLTAGE (VOLTS) f�, CURRENT�GAIN � BANDWIDTH PRODUCT (MHz T V , COLLECTOR�EMITTER VOLTAGE (VOLTS) CE C, CAPACITANCE (pF) BCX56–10R1 PACKAGE DIMENSIONS SOT–89 (3–LEAD) CASE 1213–02 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. –A– C 2. CONTROLLING DIMENSION: MILLIMETERS J 3. 1213-01 OBSOLETE, NEW STANDARD 1213-02. F MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.40 4.60 0.173 0.181 B 2.40 2.60 0.094 0.102 –B– L C 1.40 1.60 0.055 0.063 D 0.37 0.57 0.015 0.022 K E 0.32 0.52 0.013 0.020 F 1.50 1.83 0.059 0.072 D G 1.50 BSC 0.059 BSC SEATING H 3.00 BSC 0.118 BSC –T– M S S 0.10 T B A PLANE J 0.30 0.50 0.012 0.020 K 0.80 --- 0.031 --- E 2 PL L --- 4.25 --- 0.167 G M S S 0.10 T B A STYLE 2: PIN 1. BASE H 2. COLLECTOR 3. EMITTER ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. BCX56–10R1/D http://onsemi.com 4