BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose http://onsemi.com Transistors NPN Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for Q Q 1 2 low power surface mount applications. • Lead-Free Solder Plating (4) (5) (6) MAXIMUM RATINGS BC847CDXV6T1 Rating Symbol BC847 BC848 Unit Collector- Emitter Voltage V 45 30 V CEO 4 5 Collector- Base Voltage V 50 30 V CBO 6 Emitter- Base Voltage V 6.0 5.0 V 3 EBO 2 1 Collector Current - I 100 100 mAdc C SOT-563 Continuous CASE 463A PLASTIC THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAMS (One Junction Heated) Symbol Max Unit Total Device Dissipation T = 25°C P 357 mW A D (Note 1) 1G D 1L D Derate above 25°C 2.9 mW/°C (Note 1) 1G = BC847CDXV6T1, BC847CDXV6T5 Thermal Resistance - R 350 °C/W �JA 1L = BC848CDXV6T1, BC848CDXV6T5 Junction-to-Ambient (Note 1) D = Date Code Characteristic (Both Junctions Heated) Symbol Max Unit ORDERING INFORMATION Total Device Dissipation T = 25°C P 500 mW A D (Note 1) Derate above 25°C 4.0 mW/°C Device Package Shipping (Note 1) BC847CDXV6T1 SOT-563 4 mm pitch Thermal Resistance - R 250 °C/W �JA 4000/Tape & Reel Junction-to-Ambient (Note 1) BC847CDXV6T5 SOT-563 2 mm pitch Junction and Storage T , T - 55 to +150 °C J stg 8000/Tape & Reel Temperature Range 1. FR-4 @ Minimum Pad BC848CDXV6T1 SOT-563 4 mm pitch 4000/Tape & Reel BC848CDXV6T5 SOT-563 2 mm pitch 8000/Tape & Reel  Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: March, 2003 - Rev. 0 BC847CDXV6T1/D BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage V V (BR)CEO (I = 10 mA) BC847CDXV6T1 45 - - C BC848CDXV6T1 30 - - Collector- Emitter Breakdown Voltage V V (BR)CES (I = 10 μA, V = 0) BC847CDXV6T1 50 - - C EB BC848CDXV6T1 30 - - Collector- Base Breakdown Voltage V V (BR)CBO (I = 10 �A) BC847CDXV6T1 50 - - C BC848CDXV6T1 30 - - Emitter- Base Breakdown Voltage V V (BR)EBO (I = 1.0 �A) BC847CDXV6T1 6.0 - - E BC848CDXV6T1 5.0 - - Collector Cutoff Current (V = 30 V) I - - 15 nA CB CBO (V = 30 V, T = 150°C) - - 5.0 μA CB A ON CHARACTERISTICS DC Current Gain h - FE (I = 10 μA, V = 5.0 V) - 270 - C CE (I = 2.0 mA, V = 5.0 V) 420 520 800 C CE Collector- Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V - - 0.25 V C B CE(sat) Collector- Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) - - 0.6 C B Base- Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V - 0.7 - V C B BE(sat) Base- Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) - 0.9 - C B Base- Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base- Emitter Voltage (I = 10 mA, V = 5.0 V) - - 770 C CE SMALL- SIGNAL CHARACTERISTICS Current- Gain - Bandwidth Product f 100 - - MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C - - 4.5 pF CB obo Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kΩ,f = 1.0 kHz, BW = 200 Hz) - - 10 C CE S http://onsemi.com 2 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 TYPICAL CHARACTERISTICS 2.0 1.0 V = 10 V 0.9 T = 25°C CE A 1.5 T = 25°C A 0.8 V @ I /I = 10 BE(sat) C B 1.0 0.7 V @ V = 10 V 0.8 BE(on) CE 0.6 0.5 0.6 0.4 0.4 0.3 0.2 0.3 V @ I /I = 10 CE(sat) C B 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I , COLLECTOR CURRENT (mAdc) I , COLLECTOR CURRENT (mAdc) C C Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages 2.0 1.0 T = 25°C -55°C to +125°C A 1.2 1.6 I = 200 mA C 1.6 1.2 I = I = I = 50 mA I = 100 mA C C C C 2.0 10 mA 20 mA 0.8 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (mA) B C Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient 10 400 300 7.0 T = 25°C A 200 5.0 C ib V = 10 V CE 100 T = 25°C 3.0 A 80 C ob 60 2.0 40 30 1.0 20 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 V , REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mAdc) R C Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 C, CAPACITANCE (pF) V , COLLECTOR-EMITTER VOLTAGE (V) h , NORMALIZED DC CURRENT GAIN CE FE V, VOLTAGE (VOLTS) θ , TEMPERATURE COEFFICIENT (mV/°C) f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) VB T BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the interface between the board and the package. With the total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when must be the correct size to insure proper solder connection subjected to a solder reflow process. 0.3 0.45 1.0 1.35 0.5 0.5 Dimensions in mm SOT-563 SOT-563 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-563 is a function of The melting temperature of solder is higher than the the pad size. This can vary from the minimum pad size for rated temperature of the device. When the entire device is soldering to a pad size given for maximum power dissipa- heated to a high temperature, failure to complete soldering tion. Power dissipation for a surface mount device is deter- within a short time could result in device failure. There- mined by T , the maximum rated junction temperature J(max) fore, the following items should always be observed in of the die, R , the thermal resistance from the device JA θ order to minimize the thermal stress to which the devices junction to ambient, and the operating temperature, T . A are subjected. Using the values provided on the data sheet for the SOT-563 package, P can be calculated as follows: • Always preheat the device. D • The delta temperature between the preheat and T - T J(max) A P = D soldering should be 100°C or less.* R θJA • When preheating and soldering, the temperature of the The values for the equation are found in the maximum leads and the case must not exceed the maximum ratings table on the data sheet. Substituting these values temperature ratings as shown on the data sheet. When into the equation for an ambient temperature T of 25°C, A using infrared heating with the reflow soldering one can calculate the power dissipation of the device which method, the difference shall be a maximum of 10°C. in this case is 150 milliwatts. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. 150°C - 25°C P = = 150 milliwatts D 833°C/W • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. The 833°C/W for the SOT-563 package assumes the use • After soldering has been completed, the device should of the recommended footprint on a glass epoxy printed be allowed to cool naturally for at least three minutes. circuit board to achieve a power dissipation of 150 milli- Gradual cooling should be used as the use of forced watts. There are other alternatives to achieving higher cooling will increase the temperature gradient and power dissipation from the SOT-563 package. Another result in latent failure due to mechanical stress. alternative would be to use a ceramic substrate or an • Mechanical stress or shock should not be applied  aluminum core board such as Thermal Clad . Using a during cooling. board material such as Thermal Clad, an aluminum core * Soldering a device without preheating can cause exces- board, the power dissipation can be doubled using the same sive thermal shock and stress which can result in damage footprint. to the device http://onsemi.com 4 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS A 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD C FINISH THICKNESS. MINIMUM LEAD THICKNESS -X- K IS THE MINIMUM THICKNESS OF BASE MATERIAL. 6 5 4 MILLIMETERS INCHES B DIM MIN MAX MIN MAX S A 1.50 1.70 0.059 0.067 -Y- 12 3 B 1.10 1.30 0.043 0.051 C 0.50 0.60 0.020 0.024 D 0.17 0.27 0.007 0.011 G 0.50 BSC 0.020 BSC D 6 5 PL J J 0.08 0.18 0.003 0.007 G M 0.08 (0.003) X Y K 0.10 0.30 0.004 0.012 S 1.50 1.70 0.059 0.067 STYLE 1: STYLE 2: STYLE 3: STYLE 4: PIN 1. EMITTER 1 PIN 1. EMITTER 1 PIN 1. CATHODE 1 PIN 1. COLLECTOR 2. BASE 1 2. EMITTER2 2. CATHODE 1 2. COLLECTOR 3. COLLECTOR 2 3. BASE 2 3. ANODE/ANODE 2 3. BASE 4. EMITTER 2 4. COLLECTOR 2 4. CATHODE 2 4. EMITTER 5. BASE 2 5. BASE 1 5. CATHODE 2 5. COLLECTOR 6. COLLECTOR 1 6. COLLECTOR 1 6. ANODE/ANODE 1 6. COLLECTOR http://onsemi.com 5 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81-3-5773-3850 Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada BC847CDXV6T1/D http://onsemi.com 6