BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 http://onsemi.com • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector–Emitter Voltage V Vdc CEO 2 BC846 65 EMITTER BC847, BC850 45 BC848, BC849 30 MARKING DIAGRAM Collector–Base Voltage V Vdc 3 CBO BC846 80 BC847, BC850 50 xx M 1 BC848, BC849 30 2 Emitter–Base Voltage V Vdc EBO SOT–23 xx = Device Code BC846 6.0 CASE 318 = (See Table) BC847, BC850 6.0 STYLE 6 M = Date Code BC848, BC849 5.0 Collector Current – Continuous I 100 mAdc C ORDERING INFORMATION THERMAL CHARACTERISTICS Device Package Shipping Characteristic Symbol Max Unit BC846ALT1 SOT–23 3000/Tape & Reel Total Device Dissipation FR–5 Board P 225 mW D (Note 1.) BC846ALT3 SOT–23 10,000/Tape & Reel T = 25°C A Derate above 25°C 1.8 mW/°C BC846BLT1 SOT–23 3000/Tape & Reel Thermal Resistance, R 556 °C/W �JA BC846BLT3 SOT–23 10,000/Tape & Reel Junction to Ambient (Note 1.) BC847ALT1 SOT–23 3000/Tape & Reel Total Device Dissipation P 300 mW D Alumina Substrate (Note 2.) BC847BLT1 SOT–23 3000/Tape & Reel T = 25°C A Derate above 25°C 2.4 mW/°C BC847CLT1 SOT–23 3000/Tape & Reel Thermal Resistance, R 417 °C/W �JA BC847CLT3 SOT–23 10,000/Tape & Reel Junction to Ambient (Note 2.) BC848ALT1 SOT–23 3000/Tape & Reel Junction and Storage T , T –55 to °C J stg Temperature Range +150 BC848BLT1 SOT–23 3000/Tape & Reel DEVICE MARKING BC848BLT3 SOT–23 10,000/Tape & Reel BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC848CLT1 SOT–23 3000/Tape & Reel BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L; BC849BLT1 = 2B; BC849CLT1 = 2C; BC850BLT1 = 2F; BC850CLT1 = 2G BC849BLT1 SOT–23 3000/Tape & Reel 1. FR–5 = 1.0 � 0.75 � 0.062 in. BC849CLT1 SOT–23 3000/Tape & Reel 2. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. BC850BLT1 SOT–23 3000/Tape & Reel BC850CLT1 SOT–23 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value.  Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: September, 2001 – Rev. 4 BC846ALT1/D BC846ALT1 Series ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage BC846A,B V 65 – – V (BR)CEO (I = 10 mA) BC847A,B,C, BC850B,C 45 – – C BC848A,B,C, BC849B,C 30 – – Collector–Emitter Breakdown Voltage BC846A,B V 80 – – V (BR)CES (I = 10 μA, V = 0) BC847A,B,C BC850B,C 50 – – C EB BC848A,B,C, BC849B,C 30 – – Collector–Base Breakdown Voltage BC846A,B V 80 – – V (BR)CBO (I = 10 �A) BC847A,B,C, BC850B,C 50 – – C BC848A,B,C, BC849B,C 30 – – Emitter–Base Breakdown Voltage BC846A,B V 6.0 – – V (BR)EBO (I = 1.0 �A) BC847A,B,C, BC850B,C 6.0 – – E BC848A,B,C, BC849B,C 5.0 – – Collector Cutoff Current (V = 30 V) I – – 15 nA CB CBO (V = 30 V, T = 150°C) – – 5.0 μA CB A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A h – 90 – – FE (I = 10 μA, V = 5.0 V) BC846B, BC847B, BC848B – 150 – C CE BC847C, BC848C – 270 – (I = 2.0 mA, V = 5.0 V) BC846A, BC847A, BC848A 110 180 220 C CE BC846B, BC847B, BC848B, 200 290 450 BC849B, BC850B BC847C, BC848C, BC849C, BC850C 420 520 800 Collector–Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V – – 0.25 V C B CE(sat) Collector–Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) – – 0.6 C B Base–Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V – 0.7 – V C B BE(sat) Base–Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) – 0.9 – C B Base–Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base–Emitter Voltage (I = 10 mA, V = 5.0 V) – – 770 C CE SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product f 100 – – MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C – – 4.5 pF CB obo Noise Figure (I = 0.2 mA, NF dB C V = 5.0 Vdc, R = 2.0 kΩ, BC846A,B, BC847A,B,C, BC848A,B,C – – 10 CE S f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C – – 4.0 Figure 1. http://onsemi.com 2 BC846ALT1 Series BC847, BC848, BC849, BC850 2.0 1.0 V = 10 V 0.9 T = 25 °C CE A 1.5 T = 25 °C A 0.8 V @ I /I = 10 BE(sat) C B 1.0 0.7 V @ V = 10 V 0.8 0.6 BE(on) CE 0.5 0.6 0.4 0.4 0.3 0.2 0.3 V @ I /I = 10 CE(sat) C B 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I , COLLECTOR CURRENT (mAdc) I , COLLECTOR CURRENT (mAdc) C C Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages 2.0 1.0 T = 25 °C -55°C to +125 °C A 1.2 1.6 I = 200 mA C 1.6 1.2 I = I = I = 50 mA I = 100 mA C C C C 2.0 10 mA 20 mA 0.8 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (mA) B C Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient 10 400 300 7.0 T = 25 °C A 200 5.0 C ib V = 10 V CE 100 3.0 T = 25 °C A 80 C ob 60 2.0 40 30 1.0 20 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 V , REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mAdc) R C Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product http://onsemi.com 3 C, CAPACITANCE (pF) V , COLLECTOR-EMITTER VOLTAGE (V) h , NORMALIZED DC CURRENT GAIN CE FE f�, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) T V, VOLTAGE (VOLTS) θ , TEMPERATURE COEFFICIENT (mV/ C) ° VB BC846ALT1 Series BC846 1.0 T = 25 °C A V = 5 V CE 0.8 T = 25 °C A V @ I /I = 10 BE(sat) C B 2.0 0.6 V @ V = 5.0 V BE CE 1.0 0.4 0.5 0.2 0.2 V @ I /I = 10 CE(sat) C B 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 7. DC Current Gain Figure 8. “On” Voltage 2.0 -1.0 T = 25 °C A 1.6 -1.4 100 mA 200 mA 20 mA 50 mA 1.2 -1.8 θ for V VB BE -55°C to 125 °C I = C 0.8 -2.2 10 mA 0.4 -2.6 -3.0 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (mA) B C Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient 40 T = 25 °C V = 5 V A CE 500 T = 25 °C A 20 C ib 200 10 100 6.0 50 C 4.0 ob 20 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 V , REVERSE VOLTAGE (VOLTS) I , COLLECTOR CURRENT (mA) R C Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product http://onsemi.com 4 C, CAPACITANCE (pF) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) h , DC CURRENT GAIN (NORMALIZED) CE FE θ , TEMPERATURE COEFFICIENT (mV/ C) ° VB V, VOLTAGE (VOLTS) f�, CURRENT-GAIN - BANDWIDTH PRODUCT T BC846ALT1 Series INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the interface between the board and the package. With the total design. The footprint for the semiconductor packages correct pad geometry, the packages will self align when must be the correct size to insure proper solder connection subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 inches 0.8 mm SOT–23 SOT–23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for The melting temperature of solder is higher than the soldering to a pad size given for maximum power dissipa- rated temperature of the device. When the entire device is tion. Power dissipation for a surface mount device is deter- heated to a high temperature, failure to complete soldering mined by T , the maximum rated junction temperature within a short time could result in device failure. There- J(max) of the die, R , the thermal resistance from the device fore, the following items should always be observed in θJA junction to ambient, and the operating temperature, T . order to minimize the thermal stress to which the devices A Using the values provided on the data sheet for the SOT–23 are subjected. package, P can be calculated as follows: • Always preheat the device. D • The delta temperature between the preheat and T – T J(max) A P = D soldering should be 100°C or less.* R θJA • When preheating and soldering, the temperature of the The values for the equation are found in the maximum leads and the case must not exceed the maximum ratings table on the data sheet. Substituting these values temperature ratings as shown on the data sheet. When into the equation for an ambient temperature T of 25°C, A using infrared heating with the reflow soldering one can calculate the power dissipation of the device which method, the difference shall be a maximum of 10°C. in this case is 225 milliwatts. • The soldering temperature and time shall not exceed 150°C – 25°C 260°C for more than 10 seconds. P = = 225 milliwatts D 556°C/W • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. The 556°C/W for the SOT–23 package assumes the use • After soldering has been completed, the device should of the recommended footprint on a glass epoxy printed be allowed to cool naturally for at least three minutes. circuit board to achieve a power dissipation of 225 milli- Gradual cooling should be used as the use of forced watts. There are other alternatives to achieving higher cooling will increase the temperature gradient and power dissipation from the SOT–23 package. Another result in latent failure due to mechanical stress. alternative would be to use a ceramic substrate or an • Mechanical stress or shock should not be applied aluminum core board such as Thermal Clad. Using a during cooling. board material such as Thermal Clad, an aluminum core * Soldering a device without preheating can cause exces- board, the power dissipation can be doubled using the same sive thermal shock and stress which can result in damage footprint. to the device. http://onsemi.com 5 BC846ALT1 Series PACKAGE DIMENSIONS SOT–23 TO–236AB CASE 318–09 ISSUE AF NOTES: ��1. DIMENSIONING AND TOLERANCING PER ANSI A Y14.5M, 1982. ��2. CONTROLLING DIMENSION: INCH. L ��3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 3 BS INCHES MILLIMETERS 1 2 DIM MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0385 0.0498 0.99 1.26 V G D 0.0140 0.0200 0.36 0.50 G 0.0670 0.0826 1.70 2.10 H 0.0040 0.0098 0.10 0.25 J 0.0034 0.0070 0.085 0.177 K 0.0180 0.0236 0.45 0.60 C L 0.0350 0.0401 0.89 1.02 S 0.0830 0.0984 2.10 2.50 V 0.0177 0.0236 0.45 0.60 J H K D STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 6 BC846ALT1 Series Notes http://onsemi.com 7 BC846ALT1 Series Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center Literature Distribution Center for ON Semiconductor 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81–3–5740–2700 Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Email: r14525@onsemi.com Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Email: ONlit@hibbertco.com For additional information, please contact your local N. American Technical Support: 800–282–9855 Toll Free USA/Canada Sales Representative. BC846ALT1/D http://onsemi.com 8