ON Semiconductor� PNP High-Current Complementary 2N5684 NPN Silicon Power Transistors 2N5686 . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – I Continuous = 50 Amperes. 50 AMPERE C COMPLEMENTARY • DC Current Gain – SILICON h = 15–60 @ I = 25 Adc FE C POWER TRANSISTORS • Low Collector–Emitter Saturation Voltage – 60–80 VOLTS V = 1.0 Vdc (Max) @ I = 25 Adc CE(sat) C 300 WATTS MAXIMUM RATINGS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N5684 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 2N5686 Rating Symbol Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage V 80 Vdc CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage V 80 Vdc CB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage V 5.0 Vdc EB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CASE 197A–05 Collector Current – Continuous I 50 Adc TO–204AE C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current I 15 Adc B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ T = 25�C P 300 Watts C D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25�C 1.715 W/�C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction T , T –65 to +200 �C J stg ÎÎÎÎÎÎÎÎÎÎ Temperature RangeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS (1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case θ 0.584 �C/W JC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Indicates JEDEC Registered Data. 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 TEMPERATURE ( °C) Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.  Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: May, 2001 – Rev. 10 2N5684/D P , POWER DISSIPATION (WATTS) D 2N5684 2N5686 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *ELECTRICAL CHARACTERISTICS (T = 25�C unless otherwise noted) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 0.2 Adc, I = 0) 80 – C B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CEO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 40 Vdc, I = 0) CE B – 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CEX (V = 80 Vdc, V = 1.5 Vdc) – 2.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ CE EB(off) (V = 80 Vdc, V = 1.5 Vdc, T = 150�C) – 10 CE EB(off) C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current I mAdc CBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 80 Vdc, I = 0) CB E – 2.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I – 5.0 mAdc BE C EBO ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (Note 2) h – ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ FEÎÎÎÎÎÎÎÎÎÎ (I = 25 Adc, V = 2.0 Vdc) C CE 15 60 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 50 Adc, V = 5.0 Vdc) C CE 5.0 – ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 25 Adc, I = 2.5 Adc) C B – 1.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I = 50 Adc, I = 10 Adc) C B – 5.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (Note 1) (I = 25 Adc, I = 2.5 Adc) V – 2.0 Vdc C B BE(sat) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter On Voltage (Note 1) (I = 25 Adc, V = 2.0 Vdc) V – 2.0 Vdc C CE BE(on) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current–Gain – Bandwidth Product (I = 5.0 Adc, V = 10 Vdc, f = 1.0 MHz) f 2.0 – MHz C CE T Output Capacitance 2N5684 C – 2000 pF ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ obÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V = 10 Vdc, I = 0, f = 0.1 MHz) 2N5686 – 1200 CB E ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Small–Signal Current Gain (I = 10 Adc, V = 5.0 Vdc, f = 1.0 kHz) h 15 – C CE fe ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Indicates JEDEC Registered Data. Note 2: Pulse Test: Pulse Width � 300 μs, Duty Cycle � 2.0%. V -�30 V CC R L +�2.0 V TO SCOPE 0 1.0 t ≤ 20 ns r R B 0.7 t 0.5 r -12�V t ≤ r 20�ns 0.3 10 to 100 μs 0.2 2N5684 (PNP) DUTY CYCLE ≈ 2.0% t V -�30 V d 2N5686 (NPN) CC 0.1 R L 0.07 +10�V 0.05 TO SCOPE T = 25 °C J 0 0.03 t ≤ 20 ns r I /I = 10 C B R B 0.02 V = 30 V CC -12�V t ≤ 20�ns r 0.01 V +�4.0 V 10 to 100 μs BB 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 DUTY CYCLE ≈ 2.0% I , COLLECTOR CURRENT (AMP) C FOR CURVES OF FIGURES 3 & 6, R & R ARE VARIED. B L Figure 3. Turn–On Time INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. Figure 2. Switching Time Test Circuit http://onsemi.com 2 t, TIME (��s) μ 2N5684 2N5686 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 P (pk) 0.1 θ (t) = r(t) θ JC JC θ = 0.584 °C/W MAX JC 0.1 0.05 D CURVES APPLY FOR POWER 0.07 0.02 PULSE TRAIN SHOWN t 0.05 1 READ TIME AT t 1 t 2 T - T = P θ (t) 0.03 0.01 J(pk) C (pk) JC DUTY CYCLE, D = t /t 1 2 SINGLE PULSE 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 t, TIME (ms) Figure 4. Thermal Response 100 100 μs There are two limitations on the power handling ability of 500 μs 50 a transistor: average junction temperature and second 1.0 ms 5.0 ms breakdown. Safe operating area curves indicate I – V C CE 20 dc limits of the transistor that must be observed for reliable 10 T = 200 °C J operation; i.e., the transistor must not be subjected to greater SECOND BREAKDOWN LIMITED 5.0 dissipation than the curves indicate. BONDING WIRE LIMITED THERMALLY LIMITED @ T = 25 °C C 2.0 (SINGLE PULSE) The data of Figure 5 is based on T = 200�C; T is J(pk) C 1.0 CURVES APPLY BELOW variable depending on conditions. Second breakdown pulse RATED V 0.5 CEO limits are valid for duty cycles to 10% provided T J(pk) � 200�C. T may be calculated from the data in J(pk) 0.2 Figure 4. At high case temperatures, thermal limitations will 2N5684, 2N5686 0.1 reduce the power that can be handled to values less than the 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 limitations imposed by second breakdown. V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 5. Active–Region Safe Operating Area 4.0 5000 2N5684 (PNP) 3.0 T = 25 °C T = 25 °C J J 2N5686 (NPN) I = I B1 B2 2.0 3000 I /I = 10 C B V = 30 V CE t s 2000 1.0 C ib 0.8 0.6 C ob C ib 1000 t 0.4 f 700 0.3 2N5684 (PNP) C ob 2N5686 (NPN) 0.2 500 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I , COLLECTOR CURRENT (AMP) C V , REVERSE VOLTAGE (VOLTS) R Figure 6. Turn–Off Time Figure 7. Capacitance http://onsemi.com 3 t, TIME (��s) μ I , COLLECTOR CURRENT (AMP) C r(t), EFFECTIVE TRANSIENTTHERMAL RESISTANCE (NORMALIZED) C, CAPACITANCE (pF) 2N5684 2N5686 PNP NPN 2N5684 2N5686 500 500 T = +150 °C J V = 2.0 V T = +150 °C CE 300 V = 2.0 V 300 J CE V = 10 V CE V = 10 V 200 CE 200 +�25°C +�25°C 100 100 70 70 -�55°C 50 50 -�55°C 30 30 20 20 10 10 7.0 7.0 5.0 5.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I , COLLECTOR CURRENT (AMP) I , COLLECTOR CURRENT (AMP) C C Figure 8. DC Current Gain 2.0 2.0 T = 25 °C J T = 25 °C J 1.6 1.6 40 A I = 10 A 25 A C 40 A I = 10 A 25 A C 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0.1 0.2 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 I , BASE CURRENT (AMP) I , BASE CURRENT (AMP) B B Figure 9. Collector Saturation Region 2.5 2.0 T = 25 °C T = 25 °C J J 2.0 1.6 1.5 1.2 V @ I /I = 10 BE(sat) C B V @ I /I = 10 1.0 0.8 BE(sat) C B V @ V = 2.0 V V @ V = 2.0 V BE CE BE CE 0.5 0.4 V @ I /I = 10 CE(sat) C B V @ I /I = 10 CE(sat) C B 0 0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 I , COLLECTOR CURRENT (AMP) I , COLLECTOR CURRENT (AMP) C C Figure 10. “On” Voltages http://onsemi.com 4 h , DC CURRENT GAIN V, VOLTAGE (VOLTS) FE V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE V, VOLTAGE (VOLTS) h , DC CURRENT GAIN FE V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE 2N5684 2N5686 PACKAGE DIMENSIONS CASE 197A–05 TO–204AE ISSUE J A N C NOTES: SEATING –T– 1. DIMENSIONING AND TOLERANCING PER ANSI PLANE Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. K D 2 PL INCHES MILLIMETERS M M M 0.30 (0.012) T Q Y DIM MIN MAX MIN MAX A 1.530 REF 38.86 REF U B 0.990 1.050 25.15 26.67 –Y– L V C 0.250 0.335 6.35 8.51 D 0.057 0.063 1.45 1.60 2 E 0.060 0.070 1.53 1.77 G 0.430 BSC 10.92 BSC G B H H 0.215 BSC 5.46 BSC 1 K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N 0.760 0.830 19.31 21.08 –Q– Q 0.151 0.165 3.84 4.19 M M 0.25 (0.010) T Y U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 2N5684 2N5686 Notes http://onsemi.com 6 2N5684 2N5686 Notes http://onsemi.com 7 2N5684 2N5686 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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